The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 November 1999 INCH-POUND MIL-PRF-19500/505B 4 August 1999 SUPERSEDING MIL-S-19500/505A(USAF) 6 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER TYPE 2N6286, 2N6287 JAN, JANTX, AND JANTXV This specification is approved for use by the Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, Darlington, power transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to T0-3). 1.3 Maximum ratings. PT 1/ Type 2N6286 2N6287 TC = +25°C TC = +100°C W 175 175 W 87.5 87.5 VCBO VCEO VEBO IC IB Top and TSTG V dc -80 -100 V dc -80 -100 V dc -7 -7 A dc -20 -20 A dc -0.5 -0.5 °C -65 to +175 -65 to +175 1/ Derate linearly at 1.17 W/°C above TC > +25°C. 1.4 Primary electrical characteristics. Min Max hFE2 1/ hFE3 1/ VCE(sat)1 VCE(sat)2 VBE(sat) VCE = -3 V dc VCE = -3 V dc IC = -20 A dc IC = -10 A dc IC = -20 A dc IC = -10 A dc IC = -20 A dc IB = -200 mA dc IB = -40 mA dc IB = -200 mA dc V dc V dc 1,250 18,000 300 -3.0 -2.0 hfe hfe VCB = -10 V dc VCE = -3 V dc VCE = -3 V dc IE = 0 100 kHz ≤ f ≤ 1 MHz pF IC = -10 A dc f = 1 MHz IC = -10 A dc f = 1 MHz °C/W 700 400 0.857 8 80 Cobo Min Max RθJC Switching ton toff V dc µs µs -4.0 2 10 1/ Pulsed (see 4.5.1). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/505B 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3). 3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (similar to T0-3) herein. 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and herein. 3.5 Marking. Devices shall be marked in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 2 MIL-PRF-19500/505B NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Body contour is optional within zone defined by CD 4. These dimensions shall be measured at points .050 (1.27 mm) to 0.055 (1.40 mm) below seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case. 9. LD applies between L1 and LL. Diameter is uncontrolled in L1. 10. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions. (Similar to TO-3) 3 MIL-PRF-19500/505B Dimensions Symbol Notes Inches Min CD Millimeters Max 0.875 22.23 3 CH 0.250 0.360 6.35 9.14 HR 0.495 0.525 12.57 13.34 HR1 0.131 0.188 3.33 4.78 HT 0.060 0.135 1.52 3.43 LD 0.038 0.043 0.97 1.09 5, 9 LL 0.312 0.500 7.92 12.7 5 1.27 5, 9 7 L1 0.050 MHD 0.151 0.165 3.84 4.19 MHS 1.177 1.197 29.90 30.40 PS 0.420 0.440 10.67 11.18 PS1 0.205 0.225 5.21 5.72 S1 0.655 0.675 16.64 17.15 4 FIGURE 1. Physical dimensions (Similar to TO-3) - Continued. 4 MIL-PRF-19500/505B 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and herein. 4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurements JANTX and JANTXV levels 11 ICEX1 and hFE1 12 See 4.3.1 13 Subgroup 2 of table I herein; ICEX1 = 100 percent of initial value or 100 µA dc, whichever is greater. ∆hFE1 = ±40 percent of initial value. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = +162.5°C ±12.5°C, VCE ≥ -10 V dc. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition B3 1037 For solder die attach: VCB ≥ -10 V dc; TA ≤ 35°C, 2,000 cycles. B3 1037 For eutectic die attach: TA ≤ 35°C adjust PT to achieve TJ = 150°C minimum, VCB ≥ -10 V dc. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Tension: test condition A; weight = 10 lbs; time = 15 s. C6 1037 For solder die attach: VCB ≥ -10 V dc; TA ≤ 35°C, 6,000 cycles. C6 1037 For eutectic die attach: TA ≤ 35°C adjust PT to achieve TJ = 150°C minimum, VCB ≥ -10 V dc. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 5 MIL-PRF-19500/505B TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Breakdown voltage, collector - emitter 3011 3041 Bias condition A; -80 -100 V dc V dc ICEX1 -0.5 mA dc ICEO -1.0 mA dc VBE = +1.5 V dc VCE = -80 V dc 2N6286 2N6287 Collector - emitter cutoff current V(BR)CEO IC = -100 mA dc; pulsed (see 4.5.1) 2N6286 2N6287 Collector - emitter cutoff current Bias condition D; VCE = -100 V dc 3041 Bias condition D VCE = -40 V dc 2N6286 2N6287 VCE = -50 V dc Emitter - base cutoff current 3061 Bias condition D; VEB = -7 V dc IEBO -2.5 mA dc Base – emitter (nonsaturated) 3066 Test condition B; VBE -2.8 V dc VBE(sat) -4.0 V dc VCE = -3 V dc; IC = -10 A dc Base - emitter voltage (saturated) 3066 Test condition A; Collector - emitter saturated voltage 3071 IC = -20 A dc; IB = -200 mA dc; pulsed (see 4.5.1) VCE(sat)1 -3.0 V dc Collector - emitter saturated voltage 3071 IC = -10 A dc; IB = -40 mA dc; pulsed (see 4.5.1) VCE(sat)2 -2.0 V dc Forward-current transfer ratio 3076 VCE = -3 V dc; IC = -1 A dc; pulsed (see 4.5.1) hFE1 1,500 Forward-current transfer ratio 3076 VCE = -3 V dc; IC = -10 A dc; pulsed (see 4.5.1) hFE2 1,250 IC = -20 A dc; IB = -200 mA dc; pulsed (see 4.5.1) See footnote at end of table. 6 18,000 MIL-PRF-19500/505B TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 - Continued Forward-current transfer ratio 3076 VCE = -3 V dc; IC = -20 A dc; pulsed (see 4.5.1) hFE3 300 Subgroup 3 TA = +150°C High-temperature operation: Collector - emitter cutoff current 3041 mA dc -2.0 V dc ton 2.0 µs toff 10 µs VCE = -80 V dc VCE = -100 V dc 3071 Low-temperature operation: Forward-current transfer ratio -5.0 VBE = +1.5 V dc; 2N6286 2N6287 Collector - emitter saturated voltage ICEX2 Bias condition A; IC = -10 A dc; IB = -40 mA dc; pulsed (see 4.5.1) VCE(sat)3 TA = -55°C 3076 VCE = -3 V dc; IC = -10 A dc; pulsed (see 4.5.1) hFE4 150 Subgroup 4 Pulse response: Turn-on time VCC = -30 V dc; IC = -10 A dc; IB = -40 mA dc; (see figure 2) Turn-off time VCC = -30 V dc; IC = -10 A dc; IB1 = IB2 = -40 mA dc (see figure 2) Magnitude of common- emitter small-signal short-circuit forward- current transfer ratio 3306 VCE = -3 V dc; IC = -10 A dc; f = 1.0 MHz hfe 8 Small-signal short-circuit forward-current transfer ratio 3206 VCE = -3 V dc; IC = -10 A dc hfe 300 Open circuit output capacitance 3236 VCB = -10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz See footnote at end of table. 7 Cobo 80 400 pF MIL-PRF-19500/505B TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Conditions Subgroup 5 Safe operating area continuous (dc) 3051 TC = +25°C; t = 1 s; 1 cycle; (see figure 3) Test 1 VCE = -8.75 V dc; IC = -20 A dc Test 2 VCE = -30 V dc; IC = -5.8 A dc Test 3 VCE = -80 V dc; IC = -100 mA dc 2N6286 VCE = -100 V dc; IC = -100 mA dc 2N6287 Electrical measurements Safe operating area (switching) See table I, subgroup 2 3053 Load condition C; (unclamped inductive load); (see figure 4) TA = +25°C; Rs ≤ 0.1 Ω; tr + tf ≤ 15 ns; duty cycle ≤2 percent Test 1 tp = 80 µs; (vary to obtain IC); RBB1 ≥ 50 Ω; VBB1 ≥ -10 V dc; RBB2 = ∞; VBB2 = 0; IC = -20 A dc; VCC ≥ -50 V dc; The coil used shall provide a minimum inductance of 1 mH at 20 A. (For reference only; two coils in parallel (Super Electric Corporation type S16884 or equivalent).) Test 2 tp = 1 ms; (vary to obtain IC); RBB1 ≥ 50 Ω; VBB1 ≥ -10 V dc; RBB2 = ∞; VBB2 = 0; IC = -500 mA dc; VCC ≥ -50 V dc; The coil used shall provide a minimum inductance of 100 mH at 500 mA. (For reference only; two coils in series, 80 mH and 20 mH windings (Triad C-48u or equivalent).) See footnote at end of table. 8 Symbol Limits Min Unit Max MIL-PRF-19500/505B TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Conditions Subgroup 5 - Continued Electrical measurements Safe operating area (switching) See table I, subgroup 2 3053 Load condition B; (clamped inductive load); TA = +25°C; Rs = 0.1 Ω; tr + tf ≤ 1.0 µs; duty cycle ≤ 2 percent; tp = 1 ms (vary to obtain IC); RBB1 = 50 Ω; VBB1 = -10 V dc; RBB2 = 100 Ω; VBB2 = +1.5 V dc; VCC = -25 V dc; IC = -20 A dc; RL ≤ 2 Ω; L = 5 mH; (Four coils in parallel, 20 mH windings (Triad C48u or equivalent)). 2N6286 Clamp voltage = 80 +0, -5 V dc 2N6287 Clamp voltage = 100 +0, -5 V dc Device fails if clamp voltage is not reached Electrical measurements See table I, subgroup 2 Subgroups 6 and 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 9 Symbol Limits Min Unit Max MIL-PRF-19500/505B NOTES: 1. The input waveform is supplied by a pulse generator with the following characteristics: tr ≤ 20 ns, tf ≤ 20 ns, Zout = 50 Ω, PW = 23 µs, duty cycle ≤ 2 percent. 2. The output waveform is monitored on a sampling oscilloscope with Zin ≥ 20 MΩ, Cin ≤ 11.5 pF, tr ≤ 2 ns. 3. Resistors shall be noninductive types. 4. The dc power supplies may require additional by-passing in order to minimize ringing. FIGURE 2. Pulse response test circuit. 10 MIL-PRF-19500/505B FIGURE 3. Maximum safe operating area (continuous dc). 11 MIL-PRF-19500/505B FIGURE 4. Safe operating area for switching between saturation and cutoff (unclamped inductive load). 12 MIL-PRF-19500/505B 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements should be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Issue of DODISS to be cited in the solicitation (see 2.2.1). b. The lead finish as specified (see 3.4.1). c. Type designation and quality assurance level. d. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer's List QML-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. Custodian: Air Force - 11 DLA – CC Preparing activity: DLA - CC Review activities: Air Force - 19, 99 (Project 5961-2067) 13 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/505B 2. DOCUMENT DATE (YYMMDD) 990804 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER TYPES 2N6286, 2N6287 JAN, JANTX AND JANTXV 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) Commercial DSN FAX EMAIL 7. DATE SUBMITTED (YYMMDD) 8. PREPARING ACTIVITY a. Point of contact: Alan Barone, c. ADDRESS : Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street, Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN 614-692-0510 850-0510 FAX 614-692-6939 EMAIL [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-68880 Previous editions are obsolete WHS/DIOR, Feb 99