ETC JANTX2N6661

The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 30 October 1999
INCH-POUND
MIL-PRF-19500/547B
30 July 1999
SUPERSEDING
MIL-S-19500/547A
20 January 1988
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,
SILICON TYPES 2N6660 AND 2N6661
JAN, JANTX, JANTXV AND JANS
This specification is approved for use by all Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level,
high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-205AD).
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Type
2N6660
2N6661
PT 1/
PT
TC = +25°C TA = +25°C
VDS
VDGR
VGS
3/
ID1 2/
ID2 2/
TC = +25°C TC = +100°C
IS
IDM
TJ and
TSTG
°C
-65 to +150
W
mW
V dc
V dc
V dc
A dc
A dc
A dc
A(pk)
6.25
725
725
60
90
60
90
± 20
± 20
0.99
0.86
0.62
0.54
-0.99
-0.86
3
3
6.25
1/ Derate linearly 0.05 W/°C for TC > +25°C
2/ Derate above TC = +25 °C according to the formula
ID =
P( rated)
K
where P(rated) = 150 - (TC -25) (0.05) watts;
K = max rDS(on) at TJ =+150°C.
3/ RGS ≤ 1 M ohm.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/547B
1.4 Primary electrical characteristics at TC = +25°C.
Type
Min V(BR)DSS
VGS = 0 V
ID = 10 µA dc
V dc
2N6660
2N6661
60
90
VGS(th)1
VDS ≥ VGS
ID = 1.0 mA dc
V dc
Min Max
0.8
2.0
0.8
2.0
Max IDSS1
VGS = 0 V
Max rDS(on) 1/
VGS = 10 V dc
RθJC
Max
VDS = 80 percent
of
rated VDS
TJ = +25°C
at ID1
TJ = +150°C
at ID2
µA dc
Ohm
Ohm
°C/W
1.0
1.0
3.0
4.0
6.33
8.44
20
20
1/ Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in section 3 and 4 of this specification, whether or not they are listed.
2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
- Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750
- Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated
Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this
specification takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500.
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500 and figure 1 (TO-205AD) herein.
2
MIL-PRF-19500/547B
FIGURE 1. Physical dimensions (TO-205AD).
3
MIL-PRF-19500/547B
Ltr
Dimensions
Inches
Notes
Millimeters
Min
Max
Min
Max
CD
0.305
0.335
7.75
8.51
CH
0.240
0.260
6.10
6.60
HD
0.335
0.370
8.51
9.40
TW
0.028
0.034
0.71
0.86
2
TL
0.029
0.045
0.74
1.14
3
LD
0.016
0.021
0.41
0.53
7,8
LL
0.500
0.750
12.70
19.05
7,8
LC
LU
0.200 TP
0.016
L1
5.08 TP
0.019
0.41
0.050
6
0.48
7,8
1.27
7,8
L2
0.250
6.35
7,8
P
0.100
2.54
5
Q
0.050
1.27
4
R
0.010
0.25
9
α
45 TP
45 TP
6
NOTES:
1. Dimensions are in inches. Metric equivalents are given for general information only.
2. Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011 (0.028 mm).
3. Dimension TL measured from maximum HD.
4. Outline in this zone is not controlled.
5. Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane 0.054 + 0.001, - 0.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within 0.007 (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8. All three leads.
9. Radius (r) applies to both inside corners of tab.
10.
Drain is electrically connected to the case.
FIGURE 1. Physical dimensions(TO-205AD) Continued.
4
MIL-PRF-19500/547B
3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of
lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.3.2 Internal construction. Multiple chip construction shall not be permitted.
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.
3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge.
The following handling practices shall be followed:
a.
Devices shall be handled on benches with conductive handling devices.
b.
Ground test equipment, tools, and personnel handling devices.
c.
Do not handle devices by the leads.
d.
Store devices in conductive foam or carriers.
e.
Avoid use of plastic, rubber, or silk in MOS areas.
f.
Maintain relative humidity above 50 percent if practical.
g.
Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead.
h.
Gate must be terminated to source, R ≤ 100 k, whenever bias voltage is to be applied drain to source.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.8 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified manufacturer's list before contract award (see 4.2 and 6.3 ).
4. VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and herein. Alternate flow is allowed
for qualification inspection in accordance with figure 4 of MIL-PRF-19500.
4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and herein.
5
MIL-PRF-19500/547B
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as
specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I
herein shall not be acceptable.
Screen (see table IV of
MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
3
Test condition G.
Test condition G.
1/
Method 3161 (see 4.5.3)
Method 3161 (see 4.5.3)
9
IGSS1, IDSS1, gate stress test (see 4.5.5),
subgroup 2 of table I herein
Gate stress test (see 4.5.5), subgroup 2 of table I
herein
10
Method 1042, test condition B
Method 1042, test condition B
11
Subgroup 2 of table I herein;
IGSS1, IDSS1, rDS(on)1, VGS(th)1,
∆IGSS1 = ± 10 nA dc or ±100 percent of initial
value, whichever is greater.
∆IDSS1 = ± 1 µA dc or ±100 percent of initial
value, whichever is greater.
Subgroup 2 of table I herein.
IGSS1, IDSS1, rDS(on)1, VGS(th)1
12
Method 1042, test condition A and test condition
C. (see 4.3.1)
Method 1042, test condition A, (see 4.3.1)
13
Subgroups 2 and 3 of table I herein;
∆IGSS1 = ± 10 nA dc or ±100 percent of initial
value, whichever is greater.
∆IDSS1 = ± 1 µA dc or ±100 percent of initial
value, whichever is greater.
∆rDS(on)1 = ± 20 percent of initial value or ± 0.5
ohm, whichever is greater.
∆VGS(th)1 = 4± 10 percent of initial value or ±
0.3 V dc.
Subgroup 2 of table I herein;
∆IGSS1 = ± 10 nA dc or ±100 percent of initial
value, whichever is greater.
∆IDSS1 = ± 1 µA dc or ±100 percent of initial
value, whichever is greater.
∆rDS(on)1 = ± 20 percent of initial value or ± 0.5
ohm, whichever is greater.
∆VGS(th)1 = ± 10 percent of initial value or ± 0.3
V dc.
1/ Shall be performed anytime before screen 9.
4.3.1 Power burn-in. Power burn-in conditions are as follows: MIL-STD-750, method 3161, condition C, TA = +25°C, -5°C, +10°C,
VDS = 10 V min.; ID adjusted to meet a junction temperature of 140°C, - 0°C, + 10°C, t = 240 hours.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for
quality conformance inspection in accordance with figure 4 of MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical
measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein.
6
MIL-PRF-19500/547B
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VIa of MIL-PRF-19500 (JANS) and 4.4.2.1 herein. Electrical measurements (end-points) shall be in accordance with group A,
subgroup 2 herein. Delta measurements shall be in accordance with table II herein. See 4.4.2.2 herein and table VIb of MIL-PRF-19500
for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) requirements shall be in accordance with group A,
subgroup 2 herein. Delta measurements shall be in accordance with table II herein.
4.4.2.1 Group B inspection table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
3
1051
Test condition G.
4
1042
Test condition D; 2,000 cycles. The heating cycle shall be 1 minute minimum.
VDS = 10 V dc, PT = See 1.4 at TA = +25°C ± 3°C.
5
1042
Accelerated steady-state operation life; test condition C; TA = + 25°C, - 5°C, + 10°C, VDS = 10 V
min.; ID adjusted to meet a junction temperature of 140°C, - 0°C, + 10°C, t = 240 hours.
5
2037
Bond strength (Al-Au die interconnects only); test condition A.
6
3161
See 4.5.2.
4.4.2.2 Group B inspection, table IVb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
2
1051
Test condition G, 25 cycles.
3
1027
TJ = PT (RθJA) + PT = VDS ID; VDS
= 15 V dc; ID ≤ 0.05 A dc; RθJA = 170°C/W;
TA = 30 °C ± 5°C.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
Delta measurements shall be in accordance with table II herein.
Subgroup
Method
Condition
2
2036
Test condition E .
6
1026
TJ = PT (RθJA) + PT = VDS ID; VDS
TA = 30 °C ± 5°C.
7
= 15 V dc; ID ≤ 0.05 A dc; RθJA = 170°C/W;
MIL-PRF-19500/547B
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table IX of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
Delta measurements shall be in accordance with table II herein. A separate sample may be pulled for each test.
Subgroup
Method
Condition
Sampling plan
E1
1051
Test condition G, 500 cycles
Electrical measurements
See table I, subgroup 2.
45 devices, c = 0
E2
1042
Test condition A, 1,000 hours.
Electrical measurements
See table I, subgroup 2.
45 devices, c = 0
E2
1042
Test condition B, 1,000 hours.
Electrical measurements
See table I, subgroup 2.
45 devices, c = 0
E3
E4
E5
Not applicable
3161
RθJC see 1.4 herein.
5 devices, c = 0
Not applicable
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal impedance. Thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD 750.
RθJC (max) = 20 °C/W.
IM measuring current .......................................................10 mA.
IM drain heating current.....................................................0.41 A.
tH heating time ..................................................................Steady state (see MIL-STD-750, method 3161 for definition).
VH drain-source heating voltage.......................................10 V.
tMD measurement time delay............................................10 to 80 µs.
tSW sample window time .................................................10 µs (max).
4.5.3 Thermal response (∆VSD measurements). The ∆VSD measurements shall be performed in accordance with MIL-STD-750,
method 3161. The VSD conditions (IH and VH) and maximum limit shall be derived by each vendor from the thermal response curves and
shall be specified in the certificate of conformance prior to qualification. The following parameter measurements shall apply.
IM measuring current .......................................................10 mA.
IM drain heating current.....................................................0.41 A.
TH heating time .................................................................Steady state (see MIL-STD-750, method 3161 for definition).
VH drain-source heating voltage.......................................10 V.
tMD measurement time delay............................................10 to 80 µs.
tSW sample window time .................................................10 µs (max).
8
MIL-PRF-19500/547B
4.5.4 Unclamped inductive switching.
a.
Peak current (ID) (see 1.4 herein).
b.
Peak gate voltage (VGS) ............................................................10 V.
c.
Gate to source resistor (RGS) ...................................................25Ω ≤ RGS ≤ 200Ω.
d.
Initial case temperature (TC) .....................................................+25°C, +10°C, -5°C.
e.
Inductance (L).............................................................................100 µH ±10 percent.
f.
Number of pulses to be applied ..................................................1 pulse minimum.
g.
Pulse repetition rate ....................................................................None.
4.5.5 Gate stress test.
VGS = ± 30 V minimum.
t = 250 µs minimum.
9
MIL-PRF-19500/547B
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 1
Visual and mechanical
Inspection
2071
Subgroup 2
Breakdown voltage, drain to
Source
3407
Bias condition C, VGS = 0 V;
ID = 1.0 µA dc
V(BR)DSS
2N6660
2N6661
60
90
Gate to source voltage
(threshold)
3403
VDS > VGS; ID = -1.0 mA dc
VGS(th)1
Gate current
3411
Bias condition C; VDS = 0 V;
VGS = +20 and -20 V dc
IGSS1
±100
nA dc
Drain current
3413
VGS = 0; bias condition C;
VDS = 80 percent of rated VDS (see
1.3)
IDSS1
1.0
µA dc
Drain to source on-state voltage
3405
VGS = 10 V dc; condition A; pulsed
(see 4.5.1), ID = -1.0 A dc
VDS(on)1
VGS = 5 V dc; condition A; pulsed
(see 4.5.1), ID = 0.3 A dc
VDS(on)2
VGS = 10 V dc; condition A; pulsed
(see 4.5.1); ID = 1.0 A dc
rDS(on)1
2N6660
2N6661
Drain to source on-state voltage
3405
2N6660
2N6661
Static drain to source on-state
resistance
3421
0.8
3.0
4.0
V
1.5
1.6
ohms
3.0
4.0
3421
VGS = 5 V dc; condition A; pulsed
(see 4.5.1); ID = 10.3 A dc
rDS(on)2
ohms
2N6660
2N6661
Forward voltage (source drain
diode)
2N6660
2N6661
V dc
V
2N6660
2N6661
Static drain to source on-state
resistance
2.0
5.0
5.3
4011
Pulsed (see 4.5.1); VGS = 0 V
VSD
V (pk)
0.7
0.7
IS = 0.99 A dc
IS = 0.86 A dc
See footnotes at end of table.
10
1.6
1.4
MIL-PRF-19500/547B
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Conditions
3475
Pulsed (see 4.5.1), VDS = VGS = 7.5
V dc
Symbol
Limits
Min
Unit
Max
Subgroup 2 continued
Forward transconductance
gFS
170
ms
ID1 = 525 m A dc
ID2 = 475 m A dc
2N6660
2N6661
Subgroup 3
High temperature operation:
TC = +125°C
Gate current
3411
Bias condition C, VDS = 0 V;
VGS = +20 V dc and -20 V dc
IGSS2
± 500
nA dc
Drain current
3413
Bias condition C, VGS = 0 V,
VDS = -80 percent of rated VDS (see
1.3)
IDSS2
100
µA dc
Drain to source on-state voltage
3405
VGS = 10 V dc; condition A; pulsed
(see 4.5.1), ID = 1 A dc
VDS(on)3
VGS = 10 V dc; condition A; pulsed
(see 4.5.1); ID = 1.0 A dc
rDS(on)3
2N6660
2N6661
Static drain to source on-state
resistance
3421
V
5.6
7.5
ohms
2N6660
2N6661
5.6
7.5
Gate to source voltage(threshold)
3403
Low temperature operation:
Gate to source voltage
(threshold)
VDS > VGS, ID = -1.0 mA dc
VGS(th)2
0.3
V dc
TC = -55°C
3403
VDS > VGS; ID = 1.0 mA
3472
Rgen = 50 Ω; RGS = 50 Ω,
VGS(th)3
2.5
V dc
Subgroup 4
Switching time test
Turn-on delay time
VDD = 25 V dc; ID ≅ 1 A dc
td(on)
10
ns
Turn-off delay time
VDD = 25 V dc; ID ≅ 1 A dc
td(off)
10
ns
See footnotes at end of table.
11
MIL-PRF-19500/547B
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Limits
Min
Unit
Max
Subgroup 4 - Continued.
Small signal common source
short-circuit input capacitance
3431
Small signal common source
short-circuit output capacitance
Small signal common source
short-circuit reverse transfer
capacitance
3433
Ciss
50
pF
VDS = 25 V dc; VGS; = 0V; f = 1
MHz,
Coss
40
pF
VDS = 25 V dc; VGS; = 0 V; f = 1
MHz
Crss
10
pF
VDS = 25 V dc; VGS; = 0 V; f = 1
MHz
Subgroup 5
Safe operating area
See figure 2
High voltage test
VDS = 80 percent of rated V
DS (see
1.3)
Electrical measurements
See table I, subgroup 2.
Subgroups 6 and 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
12
MIL-PRF-19500/547B
TABLE II. Group B, C and E delta measurements. 1/ 2/ 3/ 4/
Step
Inspection 5/
MIL-STD-750
Symbol
Limit
Min
Method
Unit
Max
Conditions
1.
Gate current
3411
Bias condition C; VDS = 0 V
VGS = +15 V dc and -15 V dc
∆IGSS
± 10 nA dc or 100
percent of initial
value, whichever is
greater.
2.
Drain cutoff current
3413
Bias condition C; VGS = +15 V dc
and -15 V dc
VDS = 60 V for 2N6660
∆IDSS
± 1 µA dc or 100
percent of initial
value, whichever is
greater.
VDS = 90 V for 2N6661
3.
Small signal, drain to
source on-state
resistance
3423
VGS = 10 V dc; condition A,
pulsed (see 4.5.1); ID = 1.0 A dc
f = kHz
∆rDS(on)
± 0.5 ohm or ± 20
percent of initial
value , whichever
is greater.
4.
Gate to source voltage
(threshold)
3403
VDS = VGS ; ID = 1.0 mA dc
∆VGS(th)
± 10 percent of
initial value or
± 0.3 V dc,
whichever is
greater.
5.
Thermal resistance
3161
See 4.5.2
RθJC
1/ The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table II herein, step 1.
b. Subgroup 4, see table II herein, step 5.
2/ The delta measurements for table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 3, see table II herein, step 5.
3/ The delta measurements for table VII of MIL-PRF-19500 are as follows:
a. Subgroup 6, see table II herein, step 5.
4/ The delta measurements for table IX of MIL-PRF-19500 are as follows:
a. Subgroup 1, see table II herein, step 1.
b. Subgroup 2, see table II herein, step 1.
5/ See MIL-PRF-19500 for sampling plan.
13
20
°C/W
MIL-PRF-19500/547B
FIGURE 2. Maximum safe operating area.
14
MIL-PRF-19500/547B
FIGURE 2. Maximum safe operating area continued.
15
MIL-PRF-19500/547B
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When
actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to
ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity
within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is
available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a.
Issue of DODISS to be cited in the solicitation (see 2.2.1).
b.
The lead finish as specified (see 3.3.1).
c.
Type designation and quality assurance level.
d.
Packaging requirements (see 5.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Manufacturer's QML-19500 whether or not such products have actually been so
listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be
obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.
6.4 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous issue due to
the extensiveness of the changes.
Custodians:
Army - CR
Navy - EC
Air Force - 11
DLA - CC
Preparing activity:
DLA - CC
(Project 5961- 2080)
Review activities:
Navy - TD
Air Force - 13, 19, 99
16
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/547B
2. DOCUMENT DATE (YYMMDD)
990730
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661 JAN, JANTX, JANTXV AND
JANS
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
Commercial
DSN
FAX
EMAIL
7. DATE SUBMITTED
(YYMMDD)
8. PREPARING ACTIVITY
a. Point of contact: Alan Barone,
c. ADDRESS : Defense Supply Center
Columbus, ATTN: DSCC-VAC, 3990 East
Broad Street, Columbus, OH 43216-5000
DD Form 1426, Feb 1999 (EG)
b. TELEPHONE
Commercial
DSN
614-692-0510
850-0510
FAX
614-692-6939
EMAIL
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-68880
Previous editions are obsolete
WHS/DIOR, Feb 99