OM360NK OM10N100NK OM460NK POWER MOSFETS IN A TO-3 PACKAGE 400V Thru 1000V, N-Channel Size 6 MOSFETs, High Energy Capability FEATURES • • • • • TO-3 Package Hermetic, .060 Dia. Leads Size 6 Die, High Energy Fast Switching, Low Drive Current Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures. MAXIMUM RATINGS PART NUMBER OM360NK OM460NK OM10N100NK VDS (V) 400 500 1000 SCHEMATIC Drain Gate Source 4 11 R1 Supersedes 3 12 R0 3.1 - 37 RDS(on) ( ) .20 .25 1.30 ID (A) 24 22 10 3.1 OM360NK - OM10N100NK ELECTRICAL CHARACTERISTICS: OM360NK (TC = 25° unless otherwise noted) Characteristic Symbol Min. Typ. Max. V(BR)DSS 400 - - Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain IDSS Vdc mAdc (VDS = 400 V, VGS = 0) - - (VDS = 400 V, VGS = 0, TJ = 125° C) - - 0.25 1.0 Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR - - 100 nAdc 2.0 3.0 4.0 ON CHARACTERISTICS* Gate-Threshold Voltage VGS(th) (VDS = VGS, ID = 0.25 mAdc) (TJ = 125° C) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 12 Adc) RDS(on) Drain-Source On-Voltage (VGS = 10 Vdc) VDS(on) (ID = 24 A) (ID = 12 A, TJ = 125° C) Vdc 1.5 - 3.5 - - 0.20 - - 5.4 Ohm Vdc - - 5.4 gFS 14 - - mhos (VDS = 25 V, VGS = 0, Ciss - 4000 - pF f = 1.0 MHz) Coss - 550 - Crss - 110 - Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time td(on) - 30 - (VDD = 200 V, ID = 24 A, tr - 95 - Rgen = 4.3 ohms) td(off) - 80 - tf - 80 - (VDS = 320 V, ID = 24 A, Qg - 110 VGS = 10 V) Qgs - 22 - Qgd - 46 - VSD - 1.1 1.6 Vdc ton - ** - ns trr - 500 1000 Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge ns nC SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage Forward Turn-On Time (IS = 24 A, d/dt = 100 A/µs) Reverse Recovery Time ELECTRICAL CHARACTERISTICS: OM460NK (TC = 25° unless otherwise noted) Characteristic Symbol Min. Typ. Max. V(BR)DSS 500 - - Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain IDSS Vdc mAdc (VDS = 500 V, VGS = 0) - - (VDS = 500 V, VGS = 0, TJ = 125° C) - - 0.25 1.0 Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR - - 100 nAdc 2.0 3.0 4.0 ON CHARACTERISTICS* Gate-Threshold Voltage VGS(th) (VDS = VGS, ID = 0.25 mAdc) 3.1 (TJ = 125° C) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 11 Adc) RDS(on) Drain-Source On-Voltage (VGS = 10 Vdc) VDS(on) (ID = 22 A) (ID = 11 A, TJ = 125° C) Vdc 1.5 - 3.5 - - 0.25 - - 8.0 Ohm Vdc - - 8.0 gFS 11 - - mhos (VDS = 25 V, VGS = 0, Ciss - 4000 - pF f = 1.0 MHz) Coss - 480 - Crss - 95 - Forward Transconductance (VDS = 15 Vdc, ID = 11 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time td(on) - 32 - (VDD = 250 V, ID = 22 A, tr - 95 - Rgen = 4.3 ohms) Td(off) - 80 - tf - 80 - (VDS = 400 V, ID = 22 A, Qg - 115 - VGS = 10 V) Qgs - 22 - Qgd - 46 - VSD - 1.1 1.6 Vdc ton - ** - ns trr - 500 1000 Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge ns nC SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage Forward Turn-On Time Reverse Recovery Time (IS = 22 A, d/dt =100 A/µs) * Indicates Pulse Test = 300 µsec, Duty Cycle = 2%. ** Limited by circuit inductance 3.1 - 38 OM360NK - OM10N100NK ELECTRICAL CHARACTERISTICS: OM10N100NK (TC = 25° unless otherwise noted) Characteristic Symbol Min. Typ. Max. Unit V(BR)DSS 1000 - - Vdc - - 0.25 OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain IDSS (VDS = 1000 V, VGS = 0) (VDS = 1000 V, VGS = 0, TJ = 125° C) mAdc - - 1.0 Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF - - 100 nAdc Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR - - 100 nAdc 2.0 3.0 4.5 1.5 - 4.0 - - 1.3 Ohm - Vdc - - 14 ON CHARACTERISTICS* Gate-Threshold Voltage VGS(th) (VDS = VGS, ID = 0.25 mAdc) (TJ = 125° C) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 5 Adc) RDS(on) Drain-Source On-Voltage (VGS = 10 Vdc) VDS(on) (ID = 10 A) (ID = 5 A, TJ = 125° C) Vdc - - 14 gFS 5.0 - - mhos (VDS = 25 V, VGS = 0, Ciss - 3900 - pF f = 1.0 MHz) Coss - 300 - Crss - 65 - Forward Transconductance (VDS = 15 Vdc, ID = 5 Adc) DYNAMIC CHARACTERISTICSInput Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time td(on) - 40 - (VDD = 500 V, ID = 10 A, tr - 60 - Rgen = 9.1 ohms) td(off) - 100 - tf - 70 - (VDS = 500 V, ID = 10 A, Qg - 100 - VGS = 10 V) Qgs - 20 - Qgd - 40 - VSD - - 1.1 Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge ns nC 3.1 SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage Forward Turn-On Time (IS = 10 A, d/dt = 100 A/µs) Reverse Recovery Time * ** ton trr Indicates Pulse Test = 300 µsec, Duty Cycle = 2% Limited by circuit inductance 3.1 - 39 ns ** - 600 Vdc 1000 OM360NK - OM10N100NK ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) OM360NK OM460NK OM10N100NK Units VDS Parameter Drain-Source Voltage 400 500 1000 V VDGR Drain-Gate Voltage (RGS = 1 M ) 400 500 1000 V ID @ TC = 25°C Continuous Drain Current 24 22 10 A IDM Pulsed Drain Current 92 85 40 A PD @ TC = 25°C Maximum Power Dissipation 200 200 200 W Derate Above 25°C TC 1.33 1.33 1.33 W/°C 1000 1200 1000 mJ -55 to 150 -55 to 150 -55 to 150 °C 275 275 275 °C WDSS (1) Single Pulse Energy TJ Operating and Tstg Storage Temperature Range Lead Temperature (1/8" from case for 5 secs.) Drain To Source @ 25°C Note 1: VDD = 50V, ID = as noted THERMAL RESISTANCE (Maximum) at TA = 25°C RthJC Junction-to-Case .75 RthJA Junction-to-Ambient Derate above 25°C TA °C/W 30 °C/W 033 W/°C . Free Air Operation MECHANICAL OUTLINE 3.1 1.197 1.177 1.53 REF. 0.875 MAX. 0.135 MAX. SEATING PLANE 0.675 0.655 0.188 R. MAX. 0.450 0.250 0.312 MIN. 2 0.225 0.205 1 0.161 0.151 0.063 2 PLCS. 0.058 0.440 0.420 Pin Connection Pin 1: Gate Pin 2: Source Case: Drain 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 0.525 R. MAX.