CHENMKO CHM7350JPT

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual Enhancement Mode Field Effect Transistor
N-channel: VOLTAGE 100 Volts
P-channel: VOLTAGE 100 Volts
CHM7350JPT
CURRENT 2.6 Ampere
CURRENT 2.0 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SO-8
FEATURE
* Small flat package. (SO-8 )
4.06 (0.160)
3.70 (0.146)
* Super high dense cell design for extremely low RDS(ON).
* Lead free product is acquired.
* High power and current handing capability.
8
1
CONSTRUCTION
5.00 (0.197)
4.69 (0.185)
* N-Channel & P-Channel Enhancement in the package
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
4
5
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
CIRCUIT
8
D1 D1 D2 D2
5
6.20 (0.244)
5.80 (0.228)
SO-8
Dimensions in millimeters
1
4
S1 G1 S2 G2
Absolute Maximum Ratings
Symbol
.25 (0.010)
.17 (0.007)
TA = 25°C unless otherwise noted
Parameter
N-Channel
P-Channel
Units
VDSS
Drain-Source Voltage
100
-100
V
VGSS
Gate-Source Voltage
±20
±20
V
2.6
-2.0
10
-8.0
Maximum Drain Current - Continuous
ID
A
- Pulsed
PD
Maximum Power Dissipation
TJ
TSTG
(Note 3)
2000
mW
Operating Temperature Range
-55 to 150
°C
Storage Temperature Range
-55 to 150
°C
62.5
°C/W
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
2006-02
RATING CHARACTERISTIC CURVES ( CHM7350JPT )
N-Channel Electrical Characteristics T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
100
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
V
1
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
4
V
190
mΩ
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2.1A
g FS
Forward Transconductance
VDS =10V, ID = 4.5A
2
150
8
S
Dynamic Characteristics
Ciss
316
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0 MHz
93
pF
37
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
12.4
VDS=80V, ID=2.1A
16
nC
2
VGS=10V
5.4
t on
Turn-On Time
V DD= 50V
12
25
tr
Rise Time
I D = 1.0A , VGS = 10 V
10
20
t off
Turn-Off Time
RGEN= 22 Ω
30
55
tf
Fall Time
18
35
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = 1.8A , VGS = 0 V
(Note 1)
(Note 2)
1.5
A
1.3
V
RATING CHARACTERISTIC CURVES ( CHM7350JPT )
P-Channel Electrical Characteristics T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
-100
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = -100 V,VGS = 0 V
I GSSF
Gate-Body Leakage
I GSSR
Gate-Body Leakage
ON CHARACTERISTICS
V
-1
µA
VGS = 20V,VDS = 0 V
+100
nA
VGS = -20V, VDS = 0 V
-100
nA
-3
V
320
mΩ
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-1.5A
g FS
Forward Transconductance
VDS = -5V , ID = -1.5A
-1
250
7
S
Dynamic Characteristics
Ciss
576
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25V, VGS = 0V,
f = 1.0 MHz
120
pF
32
SWITCHING CHARACTERISTICS (Note 4)
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
VDS=-80V, ID=-1.5A
VGS=-10V
16
21
nC
3.5
5.0
t on
Turn-On Time
V DD= -50V
14
30
tr
Rise Time
I D = -1A , VGS = -10V
8.0
20
t off
Turn-Off Time
RGEN= 22 Ω
60
120
tf
Fall Time
20
40
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current
V SD
Drain-Source Diode Forward Voltage I S = -1.4A , VGS = 0 V (Note 2)
(Note 1)
-1.4
A
-1.6
V