CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 100 Volts P-channel: VOLTAGE 100 Volts CHM7350JPT CURRENT 2.6 Ampere CURRENT 2.0 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * N-Channel & P-Channel Enhancement in the package .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 D1 D1 D2 D2 5 6.20 (0.244) 5.80 (0.228) SO-8 Dimensions in millimeters 1 4 S1 G1 S2 G2 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) TA = 25°C unless otherwise noted Parameter N-Channel P-Channel Units VDSS Drain-Source Voltage 100 -100 V VGSS Gate-Source Voltage ±20 ±20 V 2.6 -2.0 10 -8.0 Maximum Drain Current - Continuous ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 2000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 62.5 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2006-02 RATING CHARACTERISTIC CURVES ( CHM7350JPT ) N-Channel Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min 100 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS V 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA 4 V 190 mΩ (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.1A g FS Forward Transconductance VDS =10V, ID = 4.5A 2 150 8 S Dynamic Characteristics Ciss 316 Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0 MHz 93 pF 37 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge 12.4 VDS=80V, ID=2.1A 16 nC 2 VGS=10V 5.4 t on Turn-On Time V DD= 50V 12 25 tr Rise Time I D = 1.0A , VGS = 10 V 10 20 t off Turn-Off Time RGEN= 22 Ω 30 55 tf Fall Time 18 35 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 1.8A , VGS = 0 V (Note 1) (Note 2) 1.5 A 1.3 V RATING CHARACTERISTIC CURVES ( CHM7350JPT ) P-Channel Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min -100 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA IDSS Zero Gate Voltage Drain Current VDS = -100 V,VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS V -1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA -3 V 320 mΩ (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-1.5A g FS Forward Transconductance VDS = -5V , ID = -1.5A -1 250 7 S Dynamic Characteristics Ciss 576 Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25V, VGS = 0V, f = 1.0 MHz 120 pF 32 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge VDS=-80V, ID=-1.5A VGS=-10V 16 21 nC 3.5 5.0 t on Turn-On Time V DD= -50V 14 30 tr Rise Time I D = -1A , VGS = -10V 8.0 20 t off Turn-Off Time RGEN= 22 Ω 60 120 tf Fall Time 20 40 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = -1.4A , VGS = 0 V (Note 2) (Note 1) -1.4 A -1.6 V