OMS305 OMS305A OMS405 3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase, 50 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES • • • • • • Three Phase Power Switch Configuration Zener Gate Protection 10 Miliohm Shunt Resistor Linear Thermal Sensor Isolated Low Profile Package Output Currents Up To 45 Amps DESCRIPTION This series of MOSFET switches is configured in a 3 phase bridge with a common VDD line, precision series shunt resistor in the source line, and a sensing element to monitor the substrate temperature. This device is ideally suited for Motor Control applications where size, performance, and efficiency are key. MAXIMUM RATINGS (@ 25°C) Part Number VDS (Volts) RDS(on) (m ) ID (Amps) Package OMS305 50 100 15 MP-3 OMS305A 50 70 20 MP-3 OMS405 50 14 45 MP-3 SCHEMATIC 2 1 6 5 10 9 32, 33, 34 29, 30, 31 26, 27, 28 23, 24, 25 21 22 15,16,17 18,19, 20 3 4 4 09 R0 7 8 2.1 - 49 1112 13 14 2.1 OMS305, OMS305A, OMS405 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter OMS305 OMS305A OMS405 Units VDS Drain-Source Voltage 50 50 50 V VDGR Drain-Gate Voltage (RGS = 1 m ) 50 50 50 V ID @ TC = 25°C Continuous Drain Current 15 25 45 A ID @ TC = 70°C Continuous Drain Current 11 16 45 A IDM Pulsed Drain Current 1 56 100 140 A PD @ TC = 25°C Maximum Power Dissipation 2 20 50 50 W PD @ TC = 70°C Maximum Power Dissipation 2 11 18 27 W Junction-To-Case Linear Derating Factor 0.2 0.33 0.5 W/°C Thermal Resistance Junction-To-Case 5.0 3.0 2.0 °C/W Note 1: Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. Note 2: Maximum Junction Temperature equal to 125°C. ELECTRICAL CHARACTERISTICS: OMS305 (TC = 25° unless otherwise specified) Characteristic Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0 VBRDSS 50 - - V Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat. IDSS - - 25.0 µA - - 500.0 µA IGSS - - ±500 nA Gate-Threshold Voltage, VDS = VGS, ID = 250 µA VGSth 2.0 - 4.0 V Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 9.0 A RDSon - - 0.1 - - 0.2 IDon 15 - - A VDS > ID(on) X RDS(on) Max., ID = 9.0A gfs 3.0 - - mho VDS = 25 V, Ciss - - 650 pF VGS = 0, Coss - - 450 pF f = 1.0 mHz Crss - - 280 pF tdon - - 30 ns tr - - 85 ns tdoff - - 90 ns tf - - 110 ns OFF CHARACTERISTICS VDS = Max. Rat. x 0.8, TC = 70°C Gate-Body Leakage, VGS = ±12 V ON CHARACTERISTICS 2.1 Static Drain-Source On-Resistance TC = 70°C On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time VDD = 30 V, ID = 3 A, Turn-Off Delay Time RGS = 50 , VGS = 10 V Fall Time SOURCE DRAIN DIODE CHARACTERISTICS Source - Drain Current ISD - - 14 A ISDM* - - 56 A VSD - - 1.8 V trr - 120 - ns Qrr - 0.15 - µC Resistor Tolerance RS 9.0 10 11 m Temperature Coefficient, -40°C to +70°C Tcr - 100 - ppm Source - Drain Current Pulsed Forward On-Voltage Reverse Recovery Time ISD = 28 A, VGS = 0 ISD = 13 A, di/dt = 100 A/µSec Reverse Recovered Charge RESISTOR CHARACTERISTICS * Indicates Pulse Test 300 µsec, Duty Cycle 1.5% 2.1 - 50 OMS305, OMS305A, OMS405 ELECTRICAL CHARACTERISTICS: OMS305A (TC = 25° unless otherwise specified) Characteristic Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0 V(BRDSS 50 - - V Zero Gate Voltage Drain Current = VGS , VDS = Max. Rat. IDSS - - 250 µA - - 750 µA IGSS - - ±500 nA Gate-Threshold Voltage, VDS = VGS, ID = 250 µA VGS(th) 2.0 - 4.0 V Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 10 A RDS(on) - - 0.07 - - 0.14 ID(on) 20 - - A VDS > ID(on) X RDS(on) Max., ID = 10 A, gfs 5.0 - - mho VDS = 25 V, Ciss - 1020 - pF VGS = 0, Coss - 500 - pF f = 1.0 mHz Crss - 120 - pF td(on) - - 50 ns tr - - 75 ns td(off) - - 50 ns tf - - 50 ns OFF CHARACTERISTICS VDS = Max. Rat. x 0.8, TC = 70°C Gate-Body Leakage, VGS = ±12 V ON CHARACTERISTICS Static Drain-Source On-Resistance TC = 70°C On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 30 V, ID = 10 A, RGS = 4.7 , VGS = 10 V, RL = 2.4 Fall Time SOURCE DRAIN DIODE CHARACTERISTICS Source - Drain Current ISD - - 25 A ISD = 28 A, VGS = 0, ISDM* - - 100 A ISD = 13 A, VSD - - 2.4 V trr - 100 - ns Qrr - 0.15 - µC Resistor Tolerance RS 9.0 10 11 m Temperature Coefficient, -40°C to +70°C Tcr - 100 - ppm Source - Drain Current (Pulsed) Forward On-Voltage Reverse Recovery Time di/dt = 100 A/µSec Reverse Recovered Charge RESISTOR CHARACTERISTICS * Indicates Pulse Test 300 µsec, Duty Cycle 1.5%. 2.1 - 51 2.1 OMS305, OMS305A, OMS405 ELECTRICAL CHARACTERISTICS: OMS405 (TC = 25° unless otherwise specified) Characteristic Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0 V(BRDSS 50 - - V Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat. IDSS - - 250 µA - - 750 µA IGSS - - ±100 nA Gate-Threshold Voltage, VDS = VGS, ID = 250 µA VGS(th) 2.0 - 4.0 V Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 22.5 A RDS(on) - - 0.016 - - 0.028 ID(on) 45 - - A VDS > ID(on) X RDS(on) Max., ID = 40 A, gfs 25 - - mho VDS = 25 V, Ciss - - 5200 pF VGS = 0, Coss - - 2300 pF f = 1.0 mHz Crss - - 600 pF td(on) - - 260 ns tr - - 1200 ns td(off) - - 550 ns tf - - 420 ns OFF CHARACTERISTICS VDS = Max. Rat. x 0.8, TC = 70°C Gate-Body Leakage, VGS = ±12 V ON CHARACTERISTICS Static Drain-Source On-Resistance TC = 70°C On State Drain Current, VDS > ID(on X RDS(on) Max., VGS = 10 DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time VDD = 30 V, ID = 45 A, Rise Time ID = 10 A, Turn-Off Delay Time RGS = 50 , VGS = 10 V Fall Time SOURCE DRAIN DIODE CHARACTERISTICS Source - Drain Current Source - Drain Current (Pulsed) Forward On-Voltage ISD = 45 A, VGS = 0, - - 45 A - - 150 A VSD - - 1.5 V ISD = 45 A, trr - 120 - ns di/dt = 100 A/µSec Qrr - 0.45 - µC Resistor Tolerance RS 9.0 10 11 m Temperature Coefficient, -40°C to +70°C Tcr - 100 - ppm Reverse Recovery Time 2.1 ISD ISDM* Reverse Recovered Charge RESISTOR CHARACTERISTICS * Indicates Pulse Test 300 µsec, Duty Cycle 1.5%. Mechanical Outline 2.000 .600 1.350 .325 .250 .135 .050 (34) PLCS. .150 (4) PLCS. .500 1 .150 2.450 3.000 4.000 .300 .250 .500 .360 .020 .360 MAX. .180 Pin 1: Pin 2: Pin 3: Pin 4: Pin 5: Pin 6: Pin 7: Pin 8: Pin 9: Pin 10: Pin 11: Pin 12: Pin 13: Pin 14: Pin 15: Pin 16: Pin 17: Gate Q1 Source Q1 Gate Q2 Source Q2 Gate Q3 Source Q3 Gate Q4 Source Q4 Gate Q5 Source Q5 Gate Q6 Source Q6 +Sense Res. -Sense Res. Power GND Power GND Power GND Pin 34: VDD Pin 33: VDD Pin 32: VDD Pin 31: Output Phase A Pin 30: Output Phase A Pin 29: Output Phase A Pin 28: Output Phase B Pin 17: Output Phase B Pin 26: Output Phase B Pin 25: Output Phase C Pin 24: Output Phase C Pin 23: Output Phase C Pin 22: +PTC Pin 21: -PTC Pin 20: Power GND Pin 19: Power GND Pin 18: Power GND Contact factory for lead bending options. Mounting Recommendations: Maximum Mounting Torque: 3.0 mN. The module must be attached to a flat heat sink (flatness 100um maximum). 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246