OMS410 OMS410A OMS510 3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE Three Phase, 100 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package FEATURES • • • • • • Three Phase Power Switch Configuration Zener Gate Protection 10 Miliohm Shunt Resistor Linear Thermal Sensor Isolated Low Profile Package Output Currents Up To 45 Amps DESCRIPTION This series of MOSFET switches is configured in a 3 phase bridge with a common VDD line, precision series shunt resistor in the source line, and a sensing element to monitor the substrate temperature. This device is ideally suited for Motor Control applications where size, performance, and efficiency are key. MAXIMUM RATINGS (@ 25°C) Part Number VDS (Volts) RDS(on) (m ) ID (Amps) Package OMS410 100 85 15 MP-3 OMS410A 100 85 20 MP-3 OMS510 100 42 45 MP-3 SCHEMATIC 2 1 6 5 10 9 32, 33, 34 29, 30, 31 26, 27, 28 23, 24, 25 21 22 15,16,17 18,19, 20 3 4 4 11 R0 7 8 2.1 - 53 1112 13 14 2.1 OMS410, OMS410A, OMS510 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter OMS410 OMS410A OMS510 Units VDS Drain-Source Voltage 100 100 100 V VDGR Drain-Gate Voltage (RGS = 1 m ) 100 100 100 V ID @ TC = 25°C Continuous Drain Current 15 20 45 A ID @ TC = 70°C Continuous Drain Current 11 16 45 A IDM Pulsed Drain Current 1 110 110 180 A PD @ TC = 25°C Maximum Power Dissipation 2 33 33 66 W PD @ TC = 70°C Maximum Power Dissipation 2 18 18 36 W Junction-To-Case Linear Derating Factor 0.33 0.33 0.66 W/°C Thermal Resistance Junction-To-Case 3.0 3.0 1.5 °C/W 0.010 0.010 0.010 Ohms Sense Resistor Note 1: Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. Note 2: Maximum Junction Temperature equal to 125°C. ELECTRICAL CHARACTERISTICS: OMS410 (TC = 25° unless otherwise specified) Characteristic Test Conditions Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0 VBRDSS 100 - - V Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat. IDSS - - 10 µA - - 100 µA IGSS - - ±500 nA Gate-Threshold Voltage, VDS = VGS, ID = 250 µA VGSth 2.0 - 4.0 V Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 9.0 A RDSon - - 0.058 - - 0.1 IDon 15 - - A VDS > ID(on) X RDS(on) Max., ID = 9.0 A, gfs 9.0 - - mho VDS = 25 V, Ciss - - 2600 pF VGS = 0, Coss - - 910 pF f = 1.0 mHz Crss - - 350 pF OFF CHARACTERISTICS VDS = Max. Rat. x 0.8, TC = 70°C 2.1 Gate-Body Leakage, VGS = ±12 V ON CHARACTERISTICS Static Drain-Source On-Resistance TC = 70°C On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time tdon - - 35 ns Rise Time VDD = 100 V, ID = 15 A, tr - - 290 ns Turn-Off Delay Time RGS = 10 , VGS = 10 V tdoff - - 85 ns tf - - 120 ns Fall Time SOURCE DRAIN DIODE CHARACTERISTICS Source - Drain Current ISD - - 14 A ISDM* - - 56 A VSD - - 2.5 V trr - 133 - ns Qrr - 0.85 - µC Resistor Tolerance RS 9.0 10 11 m Temperature Coefficient, -40°C to +70°C Tcr - 100 - ppm Source - Drain Current (Pulsed) Forward On-Voltage Reverse Recovery Time ISD = 28 A, VGS = 0, ISD = 13 A, di/dt = 100 A/µSec Reverse Recovered Charge RESISTOR CHARACTERISTICS * Indicates Pulse Test 300 µsec, Duty Cycle 1.5% 2.1 - 54 OMS410, OMS410A, OMS510 ELECTRICAL CHARACTERISTICS: OMS520 (TC = 25° unless otherwise specified) Characteristic Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0 V(BRDSS 100 - - V Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat. IDSS - - 10 µA - - 100 µA IGSS - - ±500 nA Gate-Threshold Voltage, VDS = VGS, ID = 250 µA VGS(th) 2.0 - 4.0 V Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 10 A RDS(on) - - 0.058 - - 0.100 ID(on) 20 - - A VDS > ID(on) X RDS(on) Max., ID = 10 A gfs 9.0 - - mho VDS = 25 V, Ciss - - 2600 pF VGS = 0, Coss - - 910 pF f = 1.0 mHz Crss - - 350 pF OFF CHARACTERISTICS VDS = Max. Rat. x 0.8, TC = 70°C Gate-Body Leakage, VGS = ±12 V ON CHARACTERISTICS Static Drain-Source On-Resistance TC = 70°C On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) - - 35 ns Rise Time VDD = 100 V, ID = 20 A, tr - - 290 ns Turn-Off Delay Time RGS = 10 , VGS = 10 V td(off) - - 85 ns tf - - 120 ns Fall Time SOURCE DRAIN DIODE CHARACTERISTICS Source - Drain Current ISD - - 20 A ISD = 28 A, VGS = 0, ISDM* - - 56 A ISD = 20 A, VSD - - 2.5 V trr - 133 - ns Qrr - 0.85 - µC Resistor Tolerance RS 9.0 10 11 m Temperature Coefficient, -40°C to +70°C Tcr - 100 - ppm Source - Drain Current (Pulsed) Forward On-Voltage Reverse Recovery Time di/dt = 100 A/µSec Reverse Recovered Charge RESISTOR CHARACTERISTICS * Indicates Pulse Test 300 µsec, Duty Cycle 1.5%. 2.1 - 55 2.1 OMS410, OMS410A, OMS510 ELECTRICAL CHARACTERISTICS: OMS510 (TC = 25° unless otherwise specified) Characteristic Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage, ID = 250 µA, VGS = 0 V(BRDSS 100 - - V Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat. IDSS - - 20 µA - - 200 µA IGSS - - ±500 nA Gate-Threshold Voltage, VDS = VGS, ID = 250 µA VGS(th) 2.0 - 4.0 V Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 22.5 A RDS(on) - - 0.029 - - 0.050 ID(on) 45 - - A VDS > ID(on) X RDS(on) Max., ID = 40 A gfs 18 - - mho VDS = 100 V, Ciss - - 5200 pF VGS = 0, Coss - - 1820 pF f = 1.0 mHz Crss - - 700 pF OFF CHARACTERISTICS VDS = Max. Rat. x 0.8, TC = 70°C Gate-Body Leakage, VGS = ±12 V ON CHARACTERISTICS Static Drain-Source On-Resistance TC = 70°C On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) - - 70 ns Rise Time VDD = 100 V, ID = 45 A, tr - - 580 ns Turn-Off Delay Time RGS = 10 , VGS = 10 V, td(off) - - 170 ns tf - - 240 ns Fall Time SOURCE DRAIN DIODE CHARACTERISTICS Source - Drain Current Source - Drain Current (Pulsed) Forward On-Voltage ISD = 45 A, VGS = 0, - - 45 A - - 120 A VSD - - 2.5 V ISD = 45 A, trr - 240 - ns di/dt = 100 A/µSec Qrr - 1.605 - µC Resistor Tolerance RS 9.0 10 11 m Temperature Coefficient, -40°C to +70°C Tcr - 100 - ppm Reverse Recovery Time 2.1 ISD ISDM* Reverse Recovered Charge RESISTOR CHARACTERISTICS * Indicates Pulse Test 300 µsec, Duty Cycle 1.5%. Mechanical Outline 2.000 .600 1.350 .325 .250 .135 .050 (34) PLCS. .150 (4) PLCS. .500 1 .150 2.450 3.000 4.000 .300 .250 .500 .360 .020 .360 MAX. .180 Pin 1: Pin 2: Pin 3: Pin 4: Pin 5: Pin 6: Pin 7: Pin 8: Pin 9: Pin 10: Pin 11: Pin 12: Pin 13: Pin 14: Pin 15: Pin 16: Pin 17: Gate Q1 Source Q1 Gate Q2 Source Q2 Gate Q3 Source Q3 Gate Q4 Source Q4 Gate Q5 Source Q5 Gate Q6 Source Q6 +Sense Res. -Sense Res. Power GND Power GND Power GND Pin 34: VDD Pin 33: VDD Pin 32: VDD Pin 31: Output Phase A Pin 30: Output Phase A Pin 29: Output Phase A Pin 28: Output Phase B Pin 17: Output Phase B Pin 26: Output Phase B Pin 25: Output Phase C Pin 24: Output Phase C Pin 23: Output Phase C Pin 22: +PTC Pin 21: -PTC Pin 20: Power GND Pin 19: Power GND Pin 18: Power GND Notes: •Contact factory for lead bending options. •Mounting Recommendations: Maximum Mounting Torque: 3.0 mN. The module must be attached to a flat heat sink (flatness 100mm maximum). 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246