DATA SHEET MOS INTEGRATED CIRCUIT µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) TM V850E/MA1 32-BIT SINGLE-CHIP MICROCONTROLLERS DESCRIPTION The µPD703103A, 703105A, 703106A, 703106A(A), 703107A, and 703107A(A) are products of the V850 Series TM of 32-bit single-chip microcontroller for real-time control applications. These microcontrollers integrate a 32-bit CPU, ROM, RAM, an interrupt controller, a real-time pulse unit, a serial interface, an A/D converter, a DMA controller, and other functions on a single chip. Detailed function descriptions are provided in the following user’s manuals. Be sure to read them before designing. V850E/MA1 Hardware User's Manual: U14359E V850E1 Architecture User's Manual: U14559E FEATURES { Number of instructions: 83 { Minimum instruction execution time: 20 ns (50 MHz internal operation) { General-purpose registers: 32 bits × 32 registers { Instruction set optimized for control applications Internal memory ROM: None (µPD703103A) 128 KB (µPD703105A, 703106A, 703106A(A)) 256 KB (µPD703107A, 703107A(A)) RAM: 4 KB (µPD703103A, 703105A) 10 KB (µPD703106A, 703106A(A), 703107A, 703107A(A)) { Memory access control (supporting EDO DRAM, SDRAM, and page ROM) { Advanced internal interrupt controller { Real-time pulse unit suitable for control operations { Powerful serial interface (with dedicated internal baud rate generator) { On-chip clock generator { 10-bit resolution A/D converter: 8 channels { DMA controller: 4 channels { Power saving functions The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. U15578EJ1V0DS00 (1st edition) Date Published January 2002 N CP(K) Printed in Japan © 2002 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) APPLICATIONS { Office machines (such as ink jet printers, facsimiles, and PPCs) { Multimedia systems (such as digital still cameras, DVD players, and video printers) ORDERING INFORMATION Part Number Package Quality Grade µPD703103AGJ-UEN 144-pin plastic LQFP (fine pitch) (20 × 20) Standard µPD703105AGJ-×××-UEN 144-pin plastic LQFP (fine pitch) (20 × 20) Standard µPD703106AGJ-×××-UEN 144-pin plastic LQFP (fine pitch) (20 × 20) Standard µPD703107AGJ-×××-UEN 144-pin plastic LQFP (fine pitch) (20 × 20) Standard µPD703106AF1-×××-EN4 161-pin plastic FBGA (13 × 13) Standard 161-pin plastic FBGA (13 × 13) Standard µPD703106AGJ(A)-×××-UEN 144-pin plastic LQFP (fine pitch) (20 × 20) Special µPD703107AGJ(A)-×××-UEN 144-pin plastic LQFP (fine pitch) (20 × 20) Special µPD703107AF1-×××-EN4 Note Note Note Under development Remark ××× indicates ROM code suffix. The µPD703106A, 703107A and µPD703106A(A), 703107A(A) differ in the quality grade only. Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 2 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) PIN CONFIGURATION (TOP VIEW) • 144-pin plastic LQFP (fine pitch) (20 × 20) µPD703106AGJ(A)-×××-UEN µPD703105AGJ-×××-UEN µPD703107AGJ-×××-UEN µPD703106AGJ-×××-UEN µPD703107AGJ(A)-x×××-UEN 144 143 142 141 140 139 138 137 136 135 134 133 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 PDL15/D15 PAL0/A0 PAL1/A1 PAL2/A2 PAL3/A3 PAL4/A4 PAL5/A5 PAL6/A6 PAL7/A7 VSS VDD PAL8/A8 PAL9/A9 PAL10/A10 PAL11/A11 PAL12/A12 PAL13/A13 PAL14/A14 PAL15/A15 VSS VDD PAH0/A16 PAH1/A17 PAH2/A18 PAH3/A19 PAH4/A20 PAH5/A21 PAH6/A22 PAH7/A23 PAH8/A24 PAH9/A25 VSS VDD PCD0/SDCKE PCD1/SDCLK PCD2/LBE/SDCAS µPD703103AGJ-UEN 108 107 106 105 104 103 102 101 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 75 74 73 PCD3/UBE/SDRAS PCS0/CS0 PCS1/CS1/RAS1 PCS2/CS2/IOWR PCS3/CS3/RAS3 PCS4/CS4/RAS4 PCS5/CS5/IORD PCS6/CS6/RAS6 PCS7/CS7 VSS VDD PCT0/LCAS/LWR/LDQM PCT1/UCAS/UWR/UDQM PCT4/RD PCT5/WE PCT6/OE PCT7/BCYST PCM0/WAIT PCM1/CLKOUT/BUSCLK PCM2/HLDAK PCM3/HLDRQ PCM4/REFRQ PCM5/SELFREF P50/INTP030/TI030 P51/INTP031 P52/TO03 VSS VDD P70/ANI0 P71/ANI1 P72/ANI2 P73/ANI3 P74/ANI4 P75/ANI5 P76/ANI6 P77/ANI7 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 VDD VSS TC3/INTP113/P27 TC2/INTP112/P26 TC1/INTP111/P25 TC0/INTP110/P24 TO02/P23 INTP021/P22 TI020/INTP020/P21 NMI/P20 VDD VSS ADTRG/INTP123/P37 INTP122/P36 INTP121/P35 RXD2/INTP120/P34 TXD2/INTP133/P33 SCK2/INTP132/P32 SI2/INTP131/P31 SO2/INTP130/P30 MODE1 MODE0 RESET CKSEL CVDD X2 X1 CVSS SCK1/P45 RXD1/SI1/P44 TXD1/SO1/P43 SCK0/P42 RXD0/SI0/P41 TXD0/SO0/P40 AVDD/AVREF AVSS D14/PDL14 D13/PDL13 D12/PDL12 D11/PDL11 D10/PDL10 D9/PDL9 D8/PDL8 VDD VSS D7/PDL7 D6/PDL6 D5/PDL5 D4/PDL4 D3/PDL3 D2/PDL2 D1/PDL1 D0/PDL0 MODE2 DMARQ3/INTP103/P07 DMARQ2/INTP102/P06 DMARQ1/INTP101/P05 DMARQ0/INTP100/P04 TO00/P03 INTP001/P02 TI000/INTP000/P01 PWM0/P00 VDD VSS DMAAK3/PBD3 DMAAK2/PBD2 DMAAK1/PBD1 DMAAK0/PBD0 TO01/P13 INTP011/P12 TI010/INTP010/P11 PWM1/P10 Data Shee U15578EJ1V0DS 3 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) • 161-pin plastic FBGA (13 × 13) µPD703106AF1-×××-EN4 µPD703107AF1-×××-EN4 Top view Bottom view 14 13 12 11 10 9 8 7 6 5 4 3 2 1 A BCDE FGH J K LMNP PNML K J HGF EDCB A Index mark Index mark (1/2) Pin No. Pin Name − A1 Pin No. Pin Name Pin No. Pin Name B10 A21/PAH5 D5 A6/PAL6 A2 D15/PDL15 B11 A25/PAH9 D6 A10/PAL10 A3 A2/PAL2 B12 SDCLK/PCD1 D7 A14/PAL14 A4 A5/PAL5 B13 CS1/RAS1/PCS1 D8 A16/PAH0 B14 − D9 A20/PAH4 A6 A9/PAL9 − C1 − D10 A23/PAH7 A7 A12/PAL12 C2 D9/PDL9 D11 SDCKE/PCD0 A8 A15/PAL15 C3 D13/PDL13 D12 CS0/PCS0 A9 A17/PAH1 C4 A1/PAL1 D13 CS5/IORD/PCS5 C5 A7/PAL7 D14 A5 − A10 − A11 A24/PAH8 C6 VDD E1 D5/PDL5 A12 VDD C7 A11/PAL11 E2 D7/PDL7 A13 LBE/SDCAS/PCD2 C8 VDD E3 D8/PDL8 A14 UBE/SDRAS/PCD3 C9 A19/PAH3 E4 D11/PDL11 C10 A22/PAH6 E5 − B1 − B2 D12/PDL12 C11 VSS E11 CS6/RAS6/PCS6 B3 A0/PAL0 C12 CS3/RAS3/PCS3 E12 CS4/RAS4/PCS4 B4 A4/PAL4 C13 CS2/IOWR/PCS2 E13 CS7/PCS7 B5 VSS C14 E14 VSS B6 A8/PAL8 D1 F1 D2/PDL2 B7 A13/PAL13 D2 D10/PDL10 F2 D3/PDL3 B8 VSS D3 D14/PDL14 F3 D4/PDL4 B9 A18/PAH2 D4 A3/PAL3 F4 VDD 4 − VSS Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (2/2) Pin No. F11 Pin Name Pin No. Pin Name Pin No. Pin Name − RD/PCT4 L6 VDD P5 F12 VDD L7 INTP122/P36 P6 INTP121/P35 F13 LCAS/LWR/LDQM/PCT0 L8 SI2/INTP131/P31 P7 SCK2/INTP132/P32 F14 UCAS/UWR/UDQM/PCT1 L9 RESET P8 MODE1 G1 MODE2 L10 TXD1/SO1/P43 P9 CVDD G2 DMARQ3/INTP103/P07 L11 ANI7/P77 P10 X1 G3 D0/PDL0 L12 ANI4/P74 P11 − G4 D6/PDL6 L13 ANI3/P73 P12 RXD1/SI1/P44 ANI2/P72 P13 RXD0/SI0/P41 P14 − G11 WAIT/PCM0 L14 G12 WE/PCT5 M1 G13 BCYST/PCT7 M2 INTP011/P12 G14 OE/PCT6 M3 TO01/P13 H1 DMARQ2/INTP102/P06 M4 TC2/INTP112/P26 − H2 DMARQ1/INTP101/P05 M5 TI020/INTP020/P21 H3 DMARQ0/INTP100/P04 M6 VSS H4 D1/PDL1 M7 RXD2/INTP120/P34 H11 REFRQ/PCM4 M8 MODE0 H12 HLDRQ/PCM3 M9 CKSEL H13 HLDAK/PCM2 M10 SCK1/P45 H14 CLKOUT/BUSCLK/PCM1 M11 TXD0/SO0/P40 J1 TO00/P03 M12 ANI6/P76 J2 TI000/INTP000/P01 M13 ANI5/P75 J3 VDD M14 J4 INTP001/P02 N1 J11 TO03/P52 N2 PWM1/P10 J12 TI030/INTP030/P50 N3 TC3/INTP113/P27 J13 SELFREF/PCM5 N4 TC0/INTP110/P24 J14 INTP031/P51 N5 NMI/P20 K1 PWM0/P00 N6 ADTRG/INTP123/P37 K2 VSS N7 TXD2/INTP133/P33 K3 DMAAK1/PBD1 N8 SO2/INTP130/P30 K4 DMAAK3/PBD3 N9 X2 K11 ANI1/P71 N10 CVSS K12 ANI0/P70 N11 SCK0/P42 K13 VSS N12 AVDD/AVREF K14 VDD N13 AVSS − − L1 − L2 DMAAK2/PBD2 − L3 TI010/INTP010/P11 P2 VSS L4 DMAAK0/PBD0 P3 TC1/INTP111/P25 L5 TO02/P23 P4 INTP021/P22 N14 P1 VDD Remark Leave the A1, A5, A10, B1, B14, C1, C14, D14, E5, L1, M1, M14, N1, N14, P5, P11, and P14 pins open. Data Shee U15578EJ1V0DS 5 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) PIN IDENTIFICATION A0 to A25: Address bus P50 to P52: Port 5 ADTRG: A/D trigger input P70 to P77: Port 7 ANI0 to ANI7: Analog input PAH0 to PAH9: Port AH AVDD: Analog power supply PAL0 to PAL15: Port AL AVREF: Analog reference voltage PBD0 to PBD3: Port BD AVSS: Analog ground PCD0 to PCD3: Port CD BCYST: Bus cycle start timing PCM0 to PCM5: Port CM BUSCLK: Bus clock output PCS0 to PCS7: Port CS CKSEL: Clock generator operating mode select PCT0, PCT1, CLKOUT: Clock output PCT4 to PCT7: Port CT CS0 to CS7: Chip select PDL0 to PDL15: Port DL CVDD: Clock generator power supply PWM0, PWM1: Pulse width modulation CVSS: Clock generator ground RAS1, RAS3, D0 to D15: Data bus RAS4, RAS6: Row address strobe DMAAK0 to DMAAK3: DMA acknowledge RD: Read DMARQ0 to DMARQ3: DMA request REFRQ: Refresh request HLDAK: Hold acknowledge RESET: Reset HLDRQ: Hold request RXD0 to RXD2: Receive data INTP000, INTP001, SCK0 to SCK2: Serial clock INTP010, INTP011, SDCAS: SDRAM column address strobe INTP020, INTP021, SDCKE: SDRAM clock enable INTP030, INTP031, SDCLK: SDRAM clock output INTP100 to INTP103, SDRAS: SDRAM row address strobe INTP110 to INTP113, SELFREF: Self-refresh request INTP120 to INTP123, SI0 to SI2: Serial input INTP130 to INTP133: Interrupt request from peripherals SO0 to SO2: Serial output IORD: I/O read strobe TC0 to TC3: Terminal count signal IOWR: I/O write strobe TI000, TI010, LBE: Lower byte enable TI020, TI030: Timer input LCAS: Lower column address strobe TO00 to TO03: Timer output LDQM: Lower DQ mask enable TXD0 to TXD2: Transmit data LWR: Lower write strobe UBE: Upper byte enable MODE0 to MODE2: Mode UCAS: Upper column address strobe NMI: Non-maskable interrupt request UDQM: Upper DQ mask enable OE: Output enable UWR: Upper write strobe P00 to P07: Port 0 VDD: Power supply P10 to P13: Port 1 VSS: Ground P20 to P27: Port 2 WAIT: Wait P30 to P37: Port 3 WE: Write enable P40 to P45: Port 4 X1, X2: Crystal 6 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) INTERNAL BLOCK DIAGRAM NMI INTP100 to INTP103, INTP110 to INTP113, INTP120 to INTP123, INTP130 to INTP133 INTP000, INTP001, INTP010, INTP011, INTP020, INTP021, INTP030, INTP031 CPU INTC BCU MEMC Instruction queue DRAMC ROM PC Note 1 32-bit barrel shifter RPU Multiplier (32 × 32 → 64) TO00 to TO03 TI000, TI010, TI020, TI030 SIO SO0/TXD0 SI0/RXD0 SCK0 UART0/CSI0 SO1/TXD1 SI1/RXD1 SCK1 UART1/CSI1 RAM System registers ALU Note 2 TXD2 DMAC UART2 SO2 SI2 SCK2 CSI2 PWM0 PWM0 Ports PWM1 PWM1 PDL0 to PDL15 PAL0 to PAL15 PAH0 to PAH9 PCS0 to PCS7 PCT0, PCT1, PCT4 to PCT7 PCM0 to PCM5 PCD0 to PCD3 PBD0 to PBD3 P70 to P77 P50 to P52 P40 to P45 P30 to P37 P21 to P27 P20 P10 to P13 P00 to P07 RXD2 ANI0 to ANI7 AVREF/AVDD AVSS ADTRG Notes 1. ADC ROMC Generalpurpose registers (32 bits × 32) CG System controller HLDRQ HLDAK CS0, CS7 CS1/RAS1, CS3/RAS3 CS4/RAS4, CS6/RAS6 CS2/IORD CS5/IOWR SELFREF REFRQ BCYST LBE/SDCAS UBE/SDRAS SDCLK SDCKE WE RD OE UWR/UCAS/UDQM LWR/LCAS/LDQM WAIT A0 to A25 D0 to D15 BUSCLK DMARQ0 to DMARQ3 DMAAK0 to DMAAK3 TC0 to TC3 CKSEL CLKOUT X1 X2 CVDD CVSS MODE0 to MODE2 RESET VDD VSS µPD703103A: ROMless µPD703105A, 703106A, 703106A(A): 128 KB µPD703107A, 703107A(A): 256 KB 2. µPD703103A, 703105A: 4 KB µPD703106A, 703106A(A), 703107A, 703107A(A): 10 KB Data Shee U15578EJ1V0DS 7 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) CONTENTS 1. CHANGES FROM µPD703106, 703107 DATA SHEET (U14792E) ......................................................9 2. DIFFERENCES BETWEEN PRODUCTS...............................................................................................9 3. PIN FUNCTIONS ..................................................................................................................................10 3.1 Port Pins .......................................................................................................................................................10 3.2 Non-Port Pins ...............................................................................................................................................12 3.3 Pin I/O Circuits and Recommended Connection of Unused Pins ...........................................................15 4. ELECTRICAL SPECIFICATIONS ........................................................................................................18 5. PACKAGE DRAWING..........................................................................................................................72 6. RECOMMENDED SOLDERING CONDITIONS ...................................................................................74 APPENDIX NOTES ON TARGET SYSTEM DESIGN ...............................................................................75 8 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) 1. CHANGES FROM µPD703106, 703107 DATA SHEET (U14792E) Page Description Throughout Addition of 161-pin plastic FBGA (13 × 13) package p.4 Addition of 161-pin plastic FBGA (13 × 13) pin configuration diagram p.18 Addition of storage temperature (Tstg) specification for FBGA package p.20 Deletion of TDK recommended oscillator constant p.24 Addition of PLL mode specifications (other than x10) to X1 input cycle (<1> tCYX) pp.28, 30, 31, 34, 36 Addition of description on UBE, LBE signals in timing chart p.29 Relaxing of data input setup time (to address) (<39> tSAID) and data input setup time (to RD) (<40> tSRDID) specifications p.31 Addition of data output setup time (to UWR, LWR, IOWR ↑) (<56> tSODWR) specifications pp.37 to 41 Addition of (5) SRAM, external ROM, and external I/O access timing (vis-à-vis BUSCLK signal) (when BCP bit of BCP register = 1) p.68 Addition of SIn setup time (to SCKn ↓) (<167> tSSISK), SIn hold time (from SCKn ↓) (<168> tHSKSI), SOn output delay time (from SCKn ↑) (<169> tDSKSO), and SOn output hold time (from SCKn ↓) (<170> tHSKSO) specifications pp.69, 70 Addition of (d) Timing when CKPn, DAPn bits of CSICn register = 01, (e) Timing when CKPn, DAPn bits of CSICn register = 10, and (f) Timing when CKPn, DAPn bits of CSICn register = 11 p.71 Change of specification unit for overall error, zero-scale error, and full-scale error Addition of integral linearity error and differential linearity error specifications p.73 Addition of 161-pin plastic FBGA (13 × 13) package drawing p.74 Addition of 6. RECOMMENDED SOLDERING CONDITIONS p.75 Addition of APPENDIX NOTES ON TARGET SYSTEM DESIGN 2. DIFFERENCES BETWEEN PRODUCTS ROM Product Type µPD703103A Mask ROM µPD703105A RAM Size Size None 4 KB Flash Memory Programming Pin None Package 144-pin LQFP Quality Grade Standard 128 KB µPD703106A 10 KB µPD703107A 256 KB 144-pin LQFP 161-pin FBGA µPD703106A(A) 128 KB 144-pin LQFP Special µPD703107A(A) 256 KB 144-pin LQFP Standard µPD70F3107A Flash memory 256 KB Provided (VPP) 161-pin FBGA µPD70F3107A(A) 144-pin LQFP Special Cautions 1. There are differences in noise immunity and noise radiation between the flash memory version and mask ROM version. When pre-producing an application set with the flash memory version and then mass-producing it with the mask ROM version, be sure to conduct sufficient evaluation for commercial samples (not engineering samples) of the mask ROM version. 2. When switching from the flash memory version to the mask ROM version, write the same code to the free area of the internal ROM. Data Shee U15578EJ1V0DS 9 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) 3. PIN FUNCTIONS 3.1 Port Pins (1/2) Pin Name P00 I/O I/O P01 P02 Function Port 0 8-bit I/O port Input/output can be specified in 1-bit units. Alternate Function PWM0 TI000/INTP000 INTP001 P03 TO00 P04 DMARQ0/INTP100 P05 DMARQ1/INTP101 P06 DMARQ2/INTP102 P07 DMARQ3/INTP103 P10 I/O P11 P12 Port 1 4-bit I/O port Input/output can be specified in 1-bit units. PWM1 INTP010/TI010 INTP011 TO01 P13 P20 Input P21 I/O P22 P23 P24 Port 2 P20 is an input-only port. If a valid edge is input, it operates as an NMI input. Also, the status of the NMI input is shown by bit 0 of the P2 register. P21 to P27 are 7-bit I/O port. Input/output can be specified in 1-bit units. NMI INTP020/TI020 INTP021 TO02 TC0/INTP110 P25 TC1/INTP111 P26 TC2/INTP112 TC3/INTP113 P27 P30 I/O P31 P32 Port 3 8-bit I/O port Input/output can be specified in 1-bit units. SO2/INTP130 SI2/INTP131 SCK2/INTP132 P33 TXD2/INTP133 P34 RXD2/INTP120 P35 INTP121 P36 INTP122 P37 ADTRG/INTP123 P40 I/O P41 P42 Port 4 6-bit I/O port Input/output can be specified in 1-bit units. TXD0/SO0 RXD0/SI0 SCK0 P43 TXD1/SO1 P44 RXD1/SI1 P45 SCK1 P50 P51 P52 10 I/O Port 5 3-bit I/O port Input/output can be specified in 1-bit units. Data Sheet U15578EJ1V0DS INTP030/TI030 INTP031 TO03 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (2/2) Pin Name I/O Function Alternate Function P70 to P77 Input Port 7 8-bit input-only port ANI0 to ANI7 PBD0 to PBD3 I/O Port BD 4-bit I/O port Input/output can be specified in 1-bit units. DMAAK0 to DMAAK3 PCM0 I/O Port CM 6-bit I/O port Input/output can be specified in 1-bit units. WAIT PCM1 PCM2 CLKOUT/BUSCLK HLDAK PCM3 HLDRQ PCM4 REFRQ PCM5 SELFREF PCT0 I/O PCT1 PCT4 Port CT 6-bit I/O port Input/output can be specified in 1-bit units. LCAS/LWR/LDQM UCAS/UWR/UDQM RD PCT5 WE PCT6 OE PCT7 BCYST PCS0 I/O PCS1 PCS2 Port CS 8-bit I/O port Input/output can be specified in 1-bit units. CS0 CS1/RAS1 CS2/IOWR PCS3 CS3/RAS3 PCS4 CS4/RAS4 PCS5 CS5/IORD PCS6 CS6/RAS6 PCS7 CS7 PCD0 I/O PCD1 PCD2 Port CD 4-bit I/O port Input/output can be specified in 1-bit units. SDCKE SDCLK LBE/SDCAS UBE/SDRAS PCD3 PAH0 to PAH9 I/O Port AH 8-/10-bit I/O port Input/output can be specified in 1-bit units. A16 to A25 PAL0 to PAL15 I/O Port AL 8-/16-bit I/O port Input/output can be specified in 1-bit units. A0 to A15 PDL0 to PDL15 I/O Port DL 8-/16-bit I/O port Input/output can be specified in 1-bit units. D0 to D15 Data Shee U15578EJ1V0DS 11 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) 3.2 Non-Port Pins (1/3) Pin Name TO00 I/O Output Function Pulse signal output of timer C0 to C3 Alternate Function P03 TO01 P13 TO02 P23 TO03 P52 TI000 Input External count clock input of timer C0 to C3 P01/INTP000 TI010 P11/INTP010 TI020 P21/INTP020 TI030 INTP000 P50/INTP030 Input INTP001 INTP010 Input INTP011 INTP020 Input INTP021 INTP030 External maskable interrupt request input, or timer C1 external capture trigger input External maskable interrupt request input, or timer C2 external capture trigger input P01/TI000 P02 P11/TI010 P12 P21/TI020 P22 Input External maskable interrupt request input, or timer C3 external capture trigger input P51 Input External maskable interrupt request input P04/DMARQ0 INTP031 INTP100 External maskable interrupt request input, or timer C0 external capture trigger input P50/TI030 INTP101 P05/DMARQ1 INTP102 P06/DMARQ2 INTP103 P07/DMARQ3 INTP110 P24/TC0 INTP111 P25/TC1 INTP112 P26/TC2 INTP113 P27/TC3 INTP120 P34/RXD2 INTP121 P35 INTP122 P36 INTP123 P37/ADTRG INTP130 P30/SO2 INTP131 P31/SI2 INTP132 P32/SCK2 INTP133 P33/TXD2 SO0 Output CSI0 to SCI2 serial transmission data output (3-wire) P40/TXD0 SO1 P43/TXD1 SO2 P30/INTP130 SI0 Input CSI0 to CSI2 serial reception data input (3-wire) P41/RXD0 SI1 P44/RXD1 SI2 P31/INTP131 12 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (2/3) Pin Name SCK0 I/O I/O Function CSI0 to CSI2 serial clock I/O (3-wire) Alternate Function P42 SCK1 P45 SCK2 P32/INTP132 TXD0 Output UART0 to UART2 serial transmission data output P40/SO0 TXD1 P43/SO1 TXD2 P33/INTP133 RXD0 Input UART0 to UART2 serial reception data input P41/SI0 RXD1 P44/SI1 RXD2 P34/INTP120 PWM0 Output PWM pulse signal output PWM1 P00 P10 ANI0 to ANI7 Input Analog inputs to the A/D converter P70 to P77 ADTRG Input A/D converter external trigger input P37/INTP123 DMARQ0 Input DMA request signal input P04/INTP100 DMARQ1 P05/INTP101 DMARQ2 P06/INTP102 DMARQ3 P07/INTP103 DMAAK0 Output DMA acknowledge signal output PBD0 DMAAK1 PBD1 DMAAK2 PBD2 DMAAK3 PBD3 TC0 Output DMA transfer termination (terminal count) signal output P24/INTP110 TC1 P25/INTP111 TC2 P26/INTP112 TC3 P27/INTP113 NMI Input Non-maskable interrupt request signal input MODE0 Input V850E/MA1 operating mode specification P20 − MODE1 − MODE2 − WAIT Input Control signal input that inserts a wait in the bus cycle PCM0 HLDAK Output Bus hold acknowledge output PCM2 HLDRQ Input Bus hold request input PCM3 REFRQ Output Refresh request signal output for DRAM PCM4 SELFREF Input Self refresh request input for DRAM PCM5 LCAS Output Column address strobe signal output for DRAM lower data PCT0/LWR/LDQM UCAS Output Column address strobe signal output for DRAM higher data PCT1/UWR/UDQM LWR Output External data lower byte write strobe signal output PCT0/LCAS/LDQM UWR Output External data higher byte write strobe signal output PCT1/UCAS/UDQM Data Shee U15578EJ1V0DS 13 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (3/3) Pin Name I/O Function Alternate Function LDQM Output Output disable/write mask signal output for SDRAM lower data PCT0/LCAS/LWR UDQM Output Output disable/write mask signal output for SDRAM higher data PCT1/UCAS/UWR RD Output External data bus read strobe signal output PCT4 WE Output Write enable signal output for DRAM PCT5 OE Output Output enable signal output for DRAM PCT6 BCYST Output Strobe signal output that shows the start of the bus cycle PCT7 CS0 Output Chip select signal output PCS0 CS1 PCS1/RAS1 CS2 PCS2/IOWR CS3 PCS3/RAS3 CS4 PCS4/RAS4 CS5 PCS5/IORD CS6 PCS6/RAS6 CS7 PCS7 RAS1 Output Row address strobe signal output for DRAM RAS3 PCS1/CS1 PCS3/CS3 RAS4 PCS4/CS4 RAS6 PCS6/CS6 IOWR Output DMA write strobe signal output PCS2/CS2 IORD Output DMA read strobe signal output PCS5/CS5 SDCKE Output SDRAM clock enable signal output PCD0 SDCLK Output SDRAM clock signal output PCD1 SDCAS Output Column address strobe signal output for SDRAM PCD2/LBE SDRAS Output Row address strobe signal output for SDRAM PCD3/UBE LBE Output External data bus lower byte enable signal output PCD2/SDCAS UBE Output External data bus higher byte enable signal output PCD3/SDRAS D0 to D15 I/O 16-bit data bus for external memory PDL0 to PDL15 A0 to A15 Output 26-bit address bus for external memory PAL0 to PAL15 RESET Input System reset input − X1 Input Connects the crystal resonator for system clock oscillation. In the case of an external source supplying the clock, it is input to X1 pin. − A16 to A25 X2 PAH0 to PAH9 − − CLKOUT Output System clock output PCM1/BUSCLK BUSCLK Output Bus clock output PCM1/CLKOUT CKSEL Input Input which specifies the clock generator's operating mode AVREF Input Reference voltage applied to A/D converter AVDD AVREF − AVDD − Positive power supply for A/D converter AVSS − Ground potential for A/D converter − CVDD − Positive power supply for the dedicated clock generator − CVSS − Ground potential for the dedicated clock generator − VDD − Positive power supply − VSS − Ground potential − 14 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) 3.3 Pin I/O Circuits and Recommended Connection of Unused Pins The input/output circuit type of each pin and recommended connection of unused pins are shown in Table 3-1. The input/output circuit configuration of each type is schematically shown in Figure 3-1. It is recommended that 1 to 10 kΩ resistors be used when connecting to VDD or VSS via a resistor. Table 3-1. Types of Pin I/O Circuits and Recommended Connection of Unused Pins (1/2) Pin Name P00/PWM0 P01/INTP000/TI000 I/O Circuit Type 5 5-AC P04/DMARQ0/INTP100 to P07/DMARQ3/INTP103 P10/PWM1 P11/INTP010/TI010 Input: Independently connect to VDD or VSS via a resistor. Output: Leave open. P02/INTP001 P03/TO00 Recommended Connection 5 5-AC 5 5-AC P12/INTP011 P13/TO01 5 P20/NMI 2 P21/INTP020/TI020 5-AC P22/INTP021 P23/TO02 P24/TC0/INTP110 to P27/TC3/INTP113 5 Connect directly to VSS. Input: Independently connect to VDD or VSS via a resistor. Output: Leave open. 5-AC P30/SO2/INTP130 P31/SI2/INTP131 P32/SCK2/INTP132 P33/TXD2/INTP133 P34/RXD2/INTP120 P35/INTP121 P36/INTP122 P37/ADTRG/INTP123 P40/TXD0/SO0 5 P41/RXD0/SI0 5-AC P42/SCK0 P43/TXD1/SO1 5 P44/RXD1/SI1 5-AC P45/SCK1 P50/INTP030/TI030 P51/INTP031 P52/TO03 5 P70/ANI0 to P77/ANI7 9 Connect directly to VSS. PBD0/DMAAK0 to PBD3/DMAAK3 5 Input: Independently connect to VDD or VSS via a resistor. Output: Leave open. Data Shee U15578EJ1V0DS 15 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) Table 3-1. Types of Pin I/O Circuits and Recommended Connection of Unused Pins (2/2) Pin Name I/O Circuit Type Recommended Connection PCM0/WAIT 5 Input: Independently connect to VDD via a resistor. PCM1/CLKOUT/BUSCLK 5 Input: Independently connect to VDD or VSS via a resistor. PCM2/HLDAK Output: Leave open. PCM3/HLDRQ 5 Input: Independently connect to VDD via a resistor. PCM4/REFRQ 5 Input: Independently connect to VDD or VSS via a resistor. Output: Leave open. PCM5/SELFREF 5 Input: Independently connect to VSS via a resistor. PCT0/LCAS/LWR/LDQM 5 PCT1/UCAS/UWR/UDQM Input: Independently connect to VDD or VSS via a resistor. PCT4/RD Output: Leave open. PCT5/WE PCT6/OE PCT7/BCYST PCS0/CS0 PCS1/CS1/RAS1 PCS2/CS2/IOWR PCS3/CS3/RAS3 PCS4/CS4/RAS4 PCS5/CS5/IORD PCS6/CS6/RAS6 PCS7/CS7 PCD0/SDCKE PCD1/SDCLK PCD2/LBE/SDCAS PCD3/UBE/SDRAS PAH0/A16 to PAH9/A25 PAL0/A0 to PAL15/A15 PDL0/D0 to PDL15/D15 MODE0 to MODE2 − 2 RESET CKSEL 1 AVSS − Connect to VSS. AVDD/AVREF − Connect to VDD. 16 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) Figure 3-1. Pin I/O Circuits Type 1 Type 5-AC VDD VDD Data P-ch IN/OUT P-ch IN Output disable N-ch N-ch Input enable Type 2 Type 9 P-ch IN IN + Comparator N-ch VREF (threshold voltage) Schmitt-triggered input with hysteresis characteristics Input enable Type 5 VDD Data P-ch IN/OUT Output disable N-ch Input enable Data Shee U15578EJ1V0DS 17 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) 4. ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings (TA = 25°°C) Parameter Symbol Conditions Ratings Unit VDD VDD pin −0.5 to +4.6 V CVDD CVDD pin −0.5 to +4.6 V CVSS CVSS pin −0.5 to +0.5 V AVDD AVDD pin −0.5 to +4.6 V AVSS AVSS pin −0.5 to +0.5 V Input voltage VI Except X1 pin −0.5 to +6.0 V Clock input voltage VK X1, VDD = 3.3 V ±0.3 V −0.5 to VDD + 1.0 V Output current, low IOL Per pin 4.0 mA Total of all pins 100 mA Per pin −4.0 mA Total of all pins −100 mA Power supply voltage Output current, high IOH Output voltage VO VDD = 3.3 V ±0.3 V Analog input voltage VWASN ANI0 to ANI7, VDD = 3.3 V ±0.3 V Operating ambient temperature TA Storage temperature −0.5 to VDD + 0.5 V −0.3 to AVDD + 0.3 V −40 to +85 °C LQFP package −60 to +150 °C FBGA package −40 to +125 °C Tstg Cautions 1. Avoid direct connections among the IC device output (or I/O) pins and between VDD or VCC and GND. However, direct connections among open-drain and open-collector pins are possible, as are direct connections to external circuits that have timing designed to prevent output conflict with pins that become high-impedance. 2. Product quality may suffer if the absolute maximum rating is exceeded even momentarily for any parameter. That is, the absolute maximum ratings are rated values at which the product is on the verge of suffering physical damage, and therefore the product must be used under conditions that ensure that the absolute maximum ratings are not exceeded. The ratings and conditions shown below for DC characteristics and AC characteristics are within the range for normal operation and quality assurance. Capacitance (TA = 25°°C, VDD = VSS = 0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input capacitance CI fC = 1 MHz 15 pF I/O capacitance CIO Unmeasured pins returned to 0 V. 15 pF Output capacitance CO 15 pF 18 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) Operating Conditions Operation Mode Internal Operation Clock Frequency (fXX) Operating Ambient Temperature (TA) Power Supply Voltage (VDD) Direct mode 4 to 25 MHz −40 to +85°C VDD = 3.3 V ±0.3 V PLL mode 4 to 50 MHz −40 to +85°C VDD = 3.3 V ±0.3 V Recommended Oscillator Caution For the resonator selection and oscillator constant of the µPD703106A(A) and 703107A(A), customers are requested to apply to the resonator manufacturer for evaluation. (a) Ceramic resonator (i) Murata Mfg. Co., Ltd. (TA = –40 to +85°°C) X1 X2 Rd C1 Type Product C2 Oscillation Frequency Recommended Circuit Constant Oscillation Voltage Range Oscillation Stabilization Time (MAX.) fX (MHz) C1 (pF) C2 (pF) Rd (kΩ) MIN. (V) MAX. (V) TOST (ms) Surface mount CSTCC4.00MG0H6 4.0 On-chip On-chip 0 3.0 3.6 0.09 CSTCC5.00MG0H6 5.0 On-chip On-chip 0 3.0 3.6 0.09 Lead CSA4.00MG 4.0 30 30 0 3.0 3.6 0.05 CST4.00MGW 4.0 On-chip On-chip 0 3.0 3.6 0.05 CSTS0400MG06 4.0 On-chip On-chip 0 3.0 3.6 0.11 CSA5.00MG 5.0 30 30 0 3.0 3.6 0.05 CST5.00MGW 5.0 On-chip On-chip 0 3.0 3.6 0.05 CSTS0500MG06 5.0 On-chip On-chip 0 3.0 3.6 0.11 Cautions 1. Connect the oscillator as closely to the X1 and X2 pins as possible. 2. Do not wire any other signal lines in the area indicated by the broken lines. 3. Thoroughly evaluate the matching between the µPD703103A, 303105A, 703106A, 703107A and the resonator. Data Sheet U15578EJ1V0DS 19 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (ii) Kyocera Corporation (TA = –20 to +80°°C) X1 X2 Rd C1 Type Surface mount Lead Product C2 Oscillation Frequency Recommended Circuit Constant Oscillation Voltage Range Oscillation Stabilization Time (MAX.) fX (MHz) C1 (pF) C2 (pF) Rd (kΩ) MIN. (V) MAX. (V) TOST (ms) PBRC4.00AR-A 4.0 33 33 0 3.0 3.6 0.11 PBRC4.00BR-A 4.0 On-chip On-chip 0 3.0 3.6 0.11 PBRC5.00AR-A 5.0 33 33 0 3.0 3.6 0.08 PBRC5.00BR-A 5.0 On-chip On-chip 0 3.0 3.6 0.08 KBR-4.0MSB 4.0 33 33 0 3.0 3.6 0.11 KBR-4.0MKC 4.0 On-chip On-chip 0 3.0 3.6 0.11 KBR-5.0MSB 5.0 33 33 0 3.0 3.6 0.08 KBR-5.0MKC 5.0 On-chip On-chip 0 3.0 3.6 0.08 Cautions 1. Connect the oscillator as closely to the X1 and X2 pins as possible. 2. Do not wire any other signal lines in the area indicated by the broken lines. 3. Thoroughly evaluate the matching between the µPD703103A, 703105A, 703106A, 703107A and the resonator. (b) External clock input (TA = –40 to +85°°C) X1 External clock 20 X2 Open Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) DC Characteristics (TA = –40 to +85°°C, VDD = 3.3 V ±0.3 V, VSS = 0 V) Parameter Symbol Input voltage, high VIH Input voltage, low VIL Conditions MIN. Except for Note 1 2.0 Clock input voltage, low Schmitt-triggered input threshold voltage Schmitt-triggered input hysteresis width Output voltage, high VXH VXL VT+ MAX. Unit 5.5 V 0.75VDD 5.5 V Except for Note 1 –0.5 0.8 V Note 1 –0.5 0.2VDD V Direct mode 0.8VDD VDD + 0.3 V PLL mode 0.8VDD VDD + 0.3 V Direct mode –0.5 0.15VDD V PLL mode –0.5 0.15VDD V Note 1 Clock input voltage, high TYP. X1 pin X1 pin Note 1, rising edge 2.0 V VT− Note 1, falling edge 1.0 V VT+ – Note 1 0.3 V IOH = –2.5 mA 0.8VDD V IOH = –100 µA VDD – 0.4 V VT− VOH Output voltage, low VOL IOL = 2.5 mA 0.45 V Input leakage current, high ILIH VI = VDD, except for Note 2 10 µA Input leakage current, low ILIL VI = 0 V, except for Note 2 −10 µA Output leakage current, high ILOH VO = VDD 10 µA Output leakage current, low ILOL VO = 0 V −10 µA Analog pin input leakage current ILWASN Note 2 ±10 µA Power supply current During normal operation IDD1 In HALT mode IDD2 In IDLE mode IDD3 In STOP mode IDD4 Direct mode 2.6 × fXX + 30 3.9 × fXX + 45 mA PLL mode 2.6 × fXX + 30 3.9 × fXX + 45 mA Direct mode 1.6 × fXX + 20 2.4 × fXX + 30 mA PLL mode 1.6 × fXX + 20 2.4 × fXX + 30 mA Direct mode 10 30 mA PLL mode 10 30 mA –40°C ≤ TA ≤ +40°C 10 60 µA 250 µA 40°C < TA ≤ 85°C Notes 1. P01/TI000/INTP000, P02/INTP001, P04/DMARQ0/INTP100 to P07/DMARQ3/INTP103, P11/TI010/INTP010, P12/INTP011, P21/TI020/INTP020, P22/INTP021, P24/TC0/INTP110 to P27/TC3/INTP113, P30/SO2/INTP130, P31/SI2/INTP131, P32/SCK2/INTP132, P33/TXD2/INTP133, P34/RXD2/INTP120, P35/INTP121, P36/INTP122, P37/ADTRG/INTP123, P41/RXD0/SI0, P42/SCK0, P44/RXD1/SI1, P45/SCK1, P50/TI030/INTP030, P51/INTP031 2. P70/ANI0 to P77/ANI7 Remarks 1. TYP. values are reference values for when TA = 25°C, VDD = 3.3 V. The current does not include the current flowing through pull-up resistors. 2. fXX: CPU operation frequency Data Sheet U15578EJ1V0DS 21 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) Data Retention Characteristics (TA = –40 to +85°°C) Parameter Symbol Conditions MIN. Data retention voltage VDDDR STOP mode and VDD = VDDDR 1.5 Data retention current IDDDR VDD = VDDDR –40°C ≤ TA ≤ +40°C TYP. 10 40°C < TA ≤ 85°C MAX. Unit 3.6 V 60 µA 250 µA Power supply voltage rise time tRVD 200 µs Power supply voltage fall time tFVD 200 µs Power supply voltage hold time (from STOP mode setting) tHVD 0 ms STOP release signal input time tDREL 0 ns Data retention high-level input voltage VIHDR Note 0.8VDDDR VDDDR V Data retention low-level input voltage VILDR Note −0.5 0.2VDDDR V Note P01/TI000/INTP000, P02/INTP001, P04/DMARQ0/INTP100 to P07/DMARQ3/INTP103, P11/TI010/INTP010, P12/INTP011, P21/TI020/INTP020, P22/INTP021, P24/TC0/INTP110 to P27/TC3/INTP113, P30/SO2/INTP130, P31/SI2/INTP131, P32/SCK2/INTP132, P33/TXD2/INTP133, P34/RXD2/INTP120, P35/INTP121, P36/INTP122, P37/ADTRG/INTP123, P41/RXD0/SI0, P42/SCK0, P44/RXD1/SI1, P45/SCK1, P50/TI030/INTP030, P51/INTP031 Remark TYP. values are reference values for when TA = 25°C. STOP mode setup VDDDR VDD tFVD tRVD tHVD RESET (input) NMI (input) (Released at falling edge) tDREL VIHDR VIHDR NMI (input) (Released at rising edge) VILDR 22 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) AC Characteristics (TA = –40 to +85°°C, VDD = 3.3 V ±0.3 V, VSS = 0 V, output pin load capacitance: CL = 50 pF) AC test input points (a) P01/TI000/INTP000, P02/INTP001, P04/DMARQ0/INTP100 to P07/DMARQ3/INTP103, P11/TI010/INTP010, P12/INTP011, P21/TI020/INTP020, P22/INTP021, P24/TC0/INTP110 to P27/TC3/INTP113, P30/SO2/INTP130, P31/SI2/INTP131, P32/SCK2/INTP132, P33/TXD2/INTP133, P34/RXD2/INTP120, P35/INTP121, P36/INTP122, P37/ADTRG/INTP123, P41/RXD0/SI0, P42/SCK0, P44/RXD1/SI1, P45/SCK1, P50/TI030/INTP030, P51/INTP031 VDD 0.75VDD Input signal 0.2VDD 0V (b) Test points 0.75VDD 0.2VDD Other than (a) above VDD 2.0 V Input signal 0.8 V 0V Test points 2.0 V 0.8 V AC test output test points 0.7VDD Output signal 0.2VDD Test points 0.7VDD 0.2VDD Load condition DUT (Device under test) C L = 50 pF Caution In cases where the load capacitance is greater than 50 pF due to the circuit configuration, insert a buffer or other element to reduce the device’s load capacitance to 50 pF or lower. Data Sheet U15578EJ1V0DS 23 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (1) Clock timing (1/2) Parameter X1 input cycle Symbol <1> Conditions tCYX Direct mode PLL mode X1 input high-level width X1 input low-level width X1 input rise time X1 input fall time <2> <3> <4> <5> tWXH tWXL tXR tXF MIN. MAX. Unit 20 125 ns ×10 200 250 ns Other than ×10 150 250 ns Direct mode 5 ns PLL mode 50 ns Direct mode 5 ns PLL mode 50 ns Direct mode 4 ns PLL mode 10 ns Direct mode 4 ns PLL mode 10 ns 250 ns CLKOUT output cycle <6> tCYK1 20 CLKOUT high-level width <7> tWKH1 0.5T – 5 ns CLKOUT low-level width <8> tWKL1 0.5T – 6 ns CLKOUT rise time <9> tKR1 5 ns CLKOUT fall time <10> tKF1 4 ns Delay time from X1↓ to CLKOUT <11> tDKX 40 ns Delay time from X1↓ to SDCLK <12> tDSX SDCLK output cycle <13> tCYK2 20 40 ns 250 ns SDCLK high-level width <14> tWKH2 0.5T – 5 ns SDCLK low-level width <15> tWKL2 0.5T – 6 ns SDCLK rise time <16> tKR2 5 ns SDCLK fall time <17> tKF2 4 ns BUSCLK rise time <18> tKR3 5 ns BUSCLK fall time <19> tKF3 4 ns Remarks 1. T = tCYK 2. The phase difference between CLKOUT and SDCLK, and between CLKOUT and BUSCLK cannot be defined. 24 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (1) Clock timing (2/2) <1> <3> <5> <4> <2> X1 (PLL mode) <1> <2> <3> <4> X1 (direct mode) <5> <11> <11> CLKOUT (output) <9> <10> <7> <8> <6> <12> SDCLK (output) <16> <17> <14> <15> <13> BUSCLK (output) <18> <19> Remark The cycle of BUSCLK varies depending on the bus cycle. (2) Output waveform (other than X1 and CLKOUT) Parameter Symbol Conditions MIN. MAX. Unit Output rise time <20> tOR 5 ns Output fall time <21> tOF 4 ns <20> <21> Signals other than X1 and CLKOUT Data Sheet U15578EJ1V0DS 25 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (3) Reset timing Parameter Symbol Conditions RESET pin high-level width <22> tWRSH RESET pin low-level width <23> tWRSL MAX. Unit 500 ns At power-on and at STOP mode release 500 + TOS ns Except at power-on and at STOP mode release 500 ns Remark TOS: Oscillation stabilization time Caution Thoroughly evaluate the oscillation stabilization time. <22> RESET (input) 26 MIN. Data Sheet U15578EJ1V0DS <23> µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (4) SRAM, external ROM, and external I/O access timing (When BCP bit of BCP register = 0) (a) Access timing (SRAM, external ROM, external I/O) (1/2) Parameter Symbol Address, CSn output delay time (from CLKOUT↑) <24> Conditions tDKA Address, CSn output delay time (from SDCLK↑) Address, CSn output hold time (from CLKOUT↑) <25> tHKA Address, CSn output hold time (from SDCLK↑) RD, IORD↓ delay time (from CLKOUT↓) <26> tDKRDL RD, IORD↓ delay time (from SDCLK↓) RD, IORD↑ delay time (from CLKOUT↑) <27> tHKRDH RD, IORD↑ delay time (from SDCLK↑) UWR, LWR, IOWR↓ delay time (from CLKOUT↓) <28> tDKWRL UWR, LWR, IOWR↓ delay time (from SDCLK↓) UWR, LWR, IOWR↑ delay time (from CLKOUT↓) <29> tHKWRH UWR, LWR, IOWR↑ delay time (from SDCLK↓) BCYST↓ delay time (from CLKOUT↑) <30> tDKBSL BCYST↓ delay time (from SDCLK↑) BCYST↑ delay time (from CLKOUT↑) <31> tHKBSH BCYST↑ delay time (from SDCLK↑) WAIT setup time (to CLKOUT↑) <32> tSWK WAIT setup time (to SDCLK↑) WAIT hold time (from CLKOUT↑) <33> tHKW WAIT hold time (from SDCLK↑) Data input setup time (to CLKOUT↑) <34> tSKID Data input setup time (to SDCLK↑) Data input hold time (from CLKOUT↑) <35> tHKID Data input hold time (from SDCLK↑) Data output delay time (from CLKOUT↓) <36> tDKOD1 Data output delay time (from SDCLK↓) Data output delay time (from CLKOUT↑) <37> tDKOD2 Data output delay time (from SDCLK↑) Data float delay time (from CLKOUT↑) <38> tHKOD Data float delay time (from SDCLK↑) MIN. MAX. Unit 2 13 ns 0 13 ns 2 13 ns 0 13 ns 2 13 ns 0 13 ns 2 13 ns 0 13 ns 2 13 ns 0 13 ns 2 13 ns 0 13 ns 2 13 ns 0 13 ns 2 13 ns 0 13 ns 8 ns 10 ns 2 ns 2 ns 8 ns 10 ns 2 ns 2 ns 2 13 ns 0 13 ns 2 13 ns 0 13 ns 2 13 ns 0 13 ns Remarks 1. Maintain at least one of the data input hold times, tHRDID or tHKID. 2. n = 0 to 7 Data Sheet U15578EJ1V0DS 27 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (a) Access timing (SRAM, external ROM, external I/O) (2/2) T1 TW T2 CLKOUT (output) SDCLK (output) <25> <24> A0 to A25 (output) CSn (output) UBE, LBE (output) <30> <30> <31> BCYST (output) <27> <27> <26> <26> RD, IORD (output) [when read] <29> <28> <29> <28> UWR, LWR, IOWR (output) [when written] <34> <38> <35> D0 to D15 (I/O) [when read] <36> <36> <38> <37> D0 to D15 (I/O) [when written] <33> <32> <33> <32> WAIT (input) Remarks 1. This is the timing when the number of waits based on the DWC0 and DWC1 registers is zero. 2. Broken lines indicate high impedance. 3. n = 0 to 7 28 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (b) Read timing (SRAM, external ROM, external I/O) (1/2) Parameter Symbol Conditions MIN. MAX. Unit Data input setup time (to address) <39> tSAID (2 + w + wD + wAS)T − 19 ns Data input setup time (to RD) <40> tSRDID (1.5 + w + wD)T − 19 ns RD, IORD low-level width <41> tWRDL (1.5 + w + wD)T − 10 ns RD, IORD high-level width <42> tWRDH (0.5 + wAS + i)T − 10 ns Delay time from address, CSn, to RD, IORD↓ <43> tDARD (0.5 + wAS)T − 10 ns Delay time from RD, IORD↑ to address <44> tDRDA iT ns Data input hold time (from RD, IORD↑) <45> tHRDID 0 ns Delay time from RD, IORD↑ to data output <46> tDRDOD (0.5 + i)T − 10 ns WAIT setup time (to address) <47> tSAW Note (1 + wAS)T − 21 ns WAIT setup time (to BCYST↓) <48> tSBSW Note (1 + wAS)T − 21 ns WAIT hold time (from BCYST↑) <49> tHBSW Note WAIT high-level width <50> tWWH Data output hold time (from UWR, LWR, IOWR↑) <57> tHWROD Note T − 10 ns T − 10 ns (0.5 + i)T − 8 ns For the first WAIT sampling when the wait count based on the DWC0 and DWC1 registers is zero. Remarks 1. T = tCYK 2. w: Wait count based on WAIT 3. wD: Wait count based on the DWC0 and DWC1 registers 4. Maintain at least one of the data input hold times tHRDID or tHKID 5. n = 0 to 7 6. i: Idle state count 7. wAS: Address setup wait count based on the ASC register Data Sheet U15578EJ1V0DS 29 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (b) Read timing (SRAM, external ROM, external I/O) (2/2) TASW T1 TW T2 TI CLKOUT (output) A0 to A25 (output) CSn (output) UBE, LBE (output) UWR, LWR, IOWR (output) <42> <41> <44> RD, IORD (output) <43> <57> <40> <39> <46> <45> D0 to D15 (I/O) <50> <47> WAIT (input) <48> <49> BCYST (output) Remarks 1. This is the timing when the wait count based on the DWC0 and DWC1 registers is zero, the idle state count based on the BCC register is 1, and the wait count based on the ASC register is 1. 2. Broken lines indicate high impedance. 3. n = 0 to 7 30 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (c) Write timing (SRAM, external ROM, external I/O) (1/2) Parameter Symbol Conditions MIN. MAX. Unit WAIT setup time (to address) <47> tSAW Note (1 + wAS)T − 21 ns WAIT setup time (to BCYST↓) <48> tSBSW Note (1 + wAS)T − 21 ns WAIT hold time (from BCYST↑) <49> tHBSW Note WAIT high-level width <50> Delay time from address, CSn to UWR, LWR, IOWR↓ T − 10 ns tWWH T − 10 ns <51> tDAWR (0.5 + wAS)T − 10 ns Address setup time (to UWR, LWR, IOWR↑) <52> tSAWR (1.5 + w + wD + wAS)T − 10 ns Delay time from UWR, LWR, IOWR↑ to address <53> tDWRA (0.5 + i)T − 10 ns UWR, LWR, IOWR high-level width <54> tWWRH (0.5 + i + wAS)T − 10 ns UWR, LWR, IOWR low-level width <55> tWWRL (1 + w + wD)T − 10 ns Data output setup time (to UWR, LWR, IOWR↑) <56> tSODWR (0.5 + w + wD)T − 10 ns Data output hold time (from UWR, LWR, IOWR↑) <57> tHWROD (0.5 + i)T − 8 ns Note For the first WAIT sampling when the wait count based on the DWC0 and DWC1 registers is zero. Remarks 1. T = tCYK 2. w: Wait count based on WAIT 3. wD: Wait count based on the DWC0 and DWC1 registers 4. n = 0 to 7 5. i: Idle state count 6. wAS: Address setup wait count based on the ASC register Data Sheet U15578EJ1V0DS 31 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (c) Write timing (SRAM, external ROM, external I/O) (2/2) TASW T1 TW T2 TI CLKOUT (output) A0 to A25 (output) CSn (output) UBE, LBE (output) RD, IORD (output) <52> <51> <54> <53> <55> UWR, LWR, IOWR (output) <56> <57> D0 to D15 (I/O) write → write D0 to D15 (I/O) read → write <50> <47> WAIT (input) <48> <49> BCYST (output) Remarks 1. This is the timing when the wait count based on the DWC0 and DWC1 registers is zero, the idle state count based on the BCC register is 1, and the wait count based on the ASC register is 1. 2. Broken lines indicate high impedance. 3. n = 0 to 7 32 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (d) DMA flyby transfer timing (SRAM → external I/O transfer) (1/2) Parameter Symbol Conditions MIN. tSWK MAX. 8 Unit WAIT setup time (to CLKOUT↑) <32> ns WAIT hold time (from CLKOUT↑) <33> tHKW 0 ns RD low-level width <41> tWRDL (1.5 + w + wD)T − 10 ns RD high-level width <42> tWRDH (0.5 + wAS + i)T − 10 ns Delay time from address, CSn to RD↓ <43> tDARD (0.5 + wAS)T − 10 ns Delay time from RD↑ to address <44> tDRDA iT ns Delay time from RD↑ to data output <46> tDRDOD WAIT setup time (to address) <47> tSAW Note (1 + wAS)T − 21 ns WAIT setup time (to BCYST↓) <48> tSBSW Note (1 + wAS)T − 21 ns WAIT hold time (from BCYST↑) <49> tHBSW Note WAIT high-level width <50> tWWH Delay time from address to IOWR↓ <51> Address setup time (to IOWR↑) <52> Delay time from IOWR↑ to address (0.5 + i)T − 10 ns T − 10 ns T − 10 ns tDAWR (0.5 + wAS)T − 10 ns tSAWR (1.5 + w + wD + wAS)T − 10 ns <53> tDWRA (1.5 + i)T − 10 ns IOWR high-level width <54> tWWRH (0.5 + i + wAS)T − 10 ns IOWR low-level width <55> tWWRL (1 + w + wD)T − 10 ns Delay time from IOWR↑ to RD↑ <58> tDIWRRD 1.5T − 10 ns Delay time from DMAAKm↓ to IOWR↓ <59> tDDAWR (0.5 + wAS)T − 10 ns Delay time from IOWR↑ to DMAAKm↑ <60> tDWRDA (1.5 + i)T − 10 ns Note For the first WAIT sampling when the number of waits based on the DWC0 and DWC1 registers is zero. Remarks 1. T = tCYK 2. w: Wait count based on WAIT 3. wD: Wait count based on the DWC0 and DWC1 registers 4. n = 0 to 7, m = 0 to 3 5. i: Idle state count 6. wAS: Address setup wait count based on the ASC register Data Sheet U15578EJ1V0DS 33 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (d) DMA flyby transfer timing (SRAM → external I/O transfer) (2/2) TASW T1 TW T2 TF TI CLKOUT (output) A0 to A25 (output) CSn (output) UBE, LBE (output) <42> <41> <44> RD (output) <43> <58> UWR, LWR (output) DMAAKm (output) <59> <60> IORD (output) <52> <51> <54> <53> <55> IOWR (output) <46> D0 to D15 (I/O) <47> <33> <32> <33> <32> WAIT (input) <50> <48> <49> BCYST (output) Remarks 1. This is the timing when the wait count based on the DWC0 and DWC1 registers is zero, the idle state count based on the BCC register is 1, and the wait count based on the ASC register is 1. 2. Broken lines indicate high impedance. 3. n = 0 to 7, m = 0 to 3 34 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (e) DMA flyby transfer timing (external I/O → SRAM transfer) (1/2) Parameter Symbol Conditions MIN. MAX. 8 Unit WAIT setup time (to CLKOUT↑) <32> tSWK ns WAIT hold time (from CLKOUT↑) <33> tHKW 0 ns IORD low-level width <41> tWRDL (2 + w + wD)T − 10 ns IORD high-level width <42> tWRDH (1 + i + wAS)T − 10 ns Delay time from address, CSn to IORD↓ <43> tDARD (0.5 + wAS)T − 10 ns Delay time from IORD↑ to address <44> tDRDA (0.5 + i)T − 10 ns Delay time from IORD↑ to data output <46> tDRDOD (1 + i)T − 10 ns WAIT setup time (to address) <47> tSAW Note (1 + wAS)T − 21 ns WAIT setup time (to BCYST↓) <48> tSBSW Note (1 + wAS)T − 21 ns WAIT hold time (from BCYST↑) <49> tHBSW Note T − 10 ns WAIT high-level width <50> tWWH T − 10 ns Delay time from address to UWR, LWR↓ <51> tDAWR (0.5 + wAS)T − 10 ns Address setup time (to UWR, LWR↑) <52> tSAWR (1.5 + w + wD + wAS)T − 10 ns Delay time from UWR, LWR↑ to address <53> tDWRA (0.5 + i)T − 10 ns UWR, LWR high-level width <54> tWWRH (0.5 + i + wAS)T − 10 ns UWR, LWR low-level width <55> tWWRL (1 + w + wD)T − 10 ns Delay time from UWR, LWR↑ to IORD↑ <61> tDWRIRD T − 10 ns Delay time from DMAAKm↓ to IORD↓ <62> tDDARD (0.5 + wAS)T − 10 ns Delay time from IORD↑ to DMAAKm↑ <63> tDRDDA (0.5 + i)T − 10 ns Note For first WAIT sampling when wait count based on the DWC0 and DWC1 registers is zero. Remarks 1. T = tCYK 2. w: Wait count based on WAIT 3. wD: Wait count based on the DWC0 and DWC1 registers 4. n = 0 to 7, m = 0 to 3 5. i: Count of idle states inserted when a write cycle follows a read cycle 6. wAS: Address setup wait count based on the ASC register Data Sheet U15578EJ1V0DS 35 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (e) DMA flyby transfer timing (external I/O → SRAM transfer) (2/2) TASW T1 TW T2 TF TI CLKOUT (output) A0 to A25 (output) CSn (output) UBE, LBE (output) <52> <51> <53> <55> <54> UWR, LWR (output) <61> RD (output) <62> <63> DMAAKm (output) IOWR (output) <43> <42> <41> <44> IORD (output) <46> D0 to D15 (I/O) <47> <33> <32> <33> <32> WAIT (input) <50> <48> <49> BCYST (output) Remarks 1. This is the timing when the wait count based on the DWC0 and DWC1 registers is zero, the idle state count based on the BCC register is 1, and the wait count based on the ASC register is 1. 2. Broken lines indicate high impedance. 3. n = 0 to 7, m = 0 to 3 36 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (5) SRAM, external ROM, and external I/O access timing (vis-à-vis BUSCLK signal) (when BCP bit of BCP register = 1) (a) Access timing (SRAM, external ROM, external I/O) Parameter Symbol Conditions MIN. MAX. Unit WAIT setup time (to BUSCLK ↓) <32> tSWK 8 ns WAIT hold time (from BUSCLK ↓) <33> tHKW 0.5T − 4 ns WAIT hold time (from BUSCLK ↓) <172> tHKW1 T+2 ns Data input setup time (to BUSCLK ↓) <34> tSKID 8 ns Data input hold time (from BUSCLK ↓) <35> tHKID 0.5T − 4 ns Data output delay time (from BUSCLK ↓) <36> tDKOD1 T−5 T+8 ns Data output delay time (from BUSCLK ↓) <37> tDKOD2 −5 +8 ns Data float delay time (from BUSCLK ↓) <38> tHKOD 0.5T − 4 0.5T + 8 ns Remarks 1. Maintain at least one of the data input hold times, tHRDID or tHKID. 2. T = Internal system clock cycle (this does not mean x2 bus cycle). TW T1 T2 T1 TW T2 Internal system clock BUSCLK (output) <34> <36> <35> <37> D0 to D15 (I/O) [when read] <37> <38> D0 to D15 (I/O) [when written] <32> <33> <32> <172> WAIT (input) Remarks 1. This is the timing when the number of waits based on the DWC0 and DWC1 registers is zero. 2. Broken lines indicate high impedance. Data Sheet U15578EJ1V0DS 37 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (b) Read timing (SRAM, external ROM, external I/O) (1/2) Parameter Symbol Conditions MIN. MAX. Unit Data input setup time (to address) <39> tSAID (2 + w + wD + wAS)T − 19 ns Data input setup time (to RD) <40> tSRDID (1.5 + w + wD)T − 19 ns RD, IORD low-level width <41> tWRDL (1.25 + w + wD)T − 10 ns RD, IORD high-level width <42> tWRDH (0.75 + wAS + i)T − 10 ns Delay time from address, CSn, to RD, IORD↓ <43> tDARD (0.75 + wAS)T − 10 ns Delay time from RD, IORD↑ to address <44> tDRDA iT ns Data input hold time (from RD, IORD↑) <45> tHRDID 0 ns Delay time from RD, IORD↑ to data output <46> tDRDOD (0.25 + i)T − 10 ns WAIT setup time (to address) <47> tSAW Note (1 + wAS)T − 21 ns WAIT setup time (to BCYST↓) <48> tSBSW Note (1 + wAS)T − 21 ns WAIT hold time (from BCYST↑) <49> tHBSW Note WAIT high-level width <50> tWWH Data output hold time (from UWR, LWR, IOWR↑) <57> tHWROD Note 0.5T − 10 ns T − 10 ns (0.25 + i)T − 8 ns For the first WAIT sampling when the wait count based on the DWC0 and DWC1 registers is zero. Remarks 1. T = BUSCLK cycle (internal system clock/2) 2. w: Wait count based on WAIT 3. wD: Wait count based on the DWC0 and DWC1 registers 4. Maintain at least one of the data input hold times tHRDID or tHKID 5. n = 0 to 7 6. i: Idle state count 7. wAS: Address setup wait count based on the ASC register 38 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (b) Read timing (SRAM, external ROM, external I/O) (2/2) TASW T1 TW T2 TI CLKOUT (output) A0 to A25 (output) CSn (output) UBE, LBE (output) UWR, LWR, IOWR (output) <42> <41> <44> RD, IORD (output) <43> <57> <40> <39> <46> <45> D0 to D15 (I/O) <50> <47> WAIT (input) <48> <49> BCYST (output) Remarks 1. This is the timing when the wait count based on the DWC0 and DWC1 registers is zero, the idle state count based on the BCC register is 1, and the wait count based on the ASC register is 1. 2. Broken lines indicate high impedance. 3. n = 0 to 7 Data Sheet U15578EJ1V0DS 39 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (c) Write timing (SRAM, external ROM, external I/O) (1/2) Parameter Symbol Conditions MIN. MAX. Unit WAIT setup time (to address) <47> tSAW Note (1 + wAS)T − 21 ns WAIT setup time (to BCYST↓) <48> tSBSW Note (1 + wAS)T − 21 ns WAIT hold time (from BCYST↑) <49> tHBSW Note WAIT high-level width <50> Delay time from address, CSn to UWR, LWR, IOWR↓ 0.5T − 10 ns tWWH T − 10 ns <51> tDAWR (0.75 + wAS)T − 10 ns Address setup time (to UWR, LWR, IOWR↑) <52> tSAWR (1.75 + w + wD + wAS)T − 10 ns Delay time from UWR, LWR, IOWR↑ to address <53> tDWRA (0.25 + i)T − 10 ns UWR, LWR, IOWR high-level width <54> tWWRH (1 + i + wAS)T − 10 ns UWR, LWR, IOWR low-level width <55> tWWRL (1 + w + wD)T − 10 ns Data output setup time (to UWR, LWR, IOWR↑) <56> tSODWR (1.25 + w + wD)T − 10 ns Data output hold time (from UWR, LWR, IOWR↑) <57> tHWROD (0.25 + i)T − 8 ns Note For the first WAIT sampling when the wait count based on the DWC0 and DWC1 registers is zero. Remarks 1. T = BUSCLK cycle (internal system clock/2) 2. w: Wait count based on WAIT 3. wD: Wait count based on the DWC0 and DWC1 registers 4. n = 0 to 7 5. i: Idle state count 6. wAS: Address setup wait count based on the ASC register 40 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (c) Write timing (SRAM, external ROM, external I/O) (2/2) TASW T1 TW T2 TI CLKOUT (output) A0 to A25 (output) CSn (output) UBE, LBE (output) RD, IORD (output) <52> <51> <54> <53> <55> UWR, LWR, IOWR (output) <56> <57> D0 to D15 (I/O) write → write D0 to D15 (I/O) read → write <50> <47> WAIT (input) <48> <49> BCYST (output) Remarks 1. This is the timing when the wait count based on the DWC0 and DWC1 registers is zero, the idle state count based on the BCC register is 1, and the wait count based on the ASC register is 1. 2. Broken lines indicate high impedance. 3. n = 0 to 7 Data Sheet U15578EJ1V0DS 41 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (6) Page ROM access timing (a) 8-bit bus width (halfword/word access), 16-bit bus width (word access) (1/2) Parameter Symbol Conditions MIN. MAX. Unit WAIT setup time (to CLKOUT↑) <32> tSWK 8 ns WAIT hold time (from CLKOUT↑) <33> tHKW 0 ns Data input setup time (to CLKOUT↑) <34> tSKID 8 ns Data input hold time (from CLKOUT↑) <35> tHKID 0 ns Off-page data input setup time (to address) <39> tSAID (2 + w + wD + wAS)T − 21 ns Off-page data input setup time (to RD) <40> tSRDID (1.5 + w + wD)T − 21 ns Data input hold time (from RD↑) <45> tHRDID 0 ns Delay time from RD↑ to data output <46> tDRDOD (0.5 + i)T − 10 ns On-page data input setup time (to address) <64> tSOAID Remarks 1. T = tCYK 2. w: Wait count based on WAIT 3. wD: Wait count based on the DWC0 and DWC1 registers 4. wPR: Wait count based on the PRC register 5. i: Count of idle states inserted when a write cycle follows a read cycle 6. wAS: Address setup wait count based on the ASC register 7. Maintain at least one of the data input hold times tHKID or tHRDID 42 Data Sheet U15578EJ1V0DS (2 + w + wPR + wAS)T − 21 ns µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (a) 8-bit bus width (halfword/word access), 16-bit bus width (word access) (2/2) TASW T1 TDW TW T2 TASW TO1 TPRW TW TO2 CLKOUT (output) CSn (output) AddressNote (output) <34> <39> <64> UWR, LWR (output) <40> RD (output) <45> <34> <35> <35> D0 to D15 (I/O) <33> <33> <32> <33> <32> <32> <32> <33> <46> WAIT (input) BCYST (output) Note On-page and off-page addresses are as follows. PRC Register MA6 MA5 MA4 MA3 On-Page Address Off-Page Address 0 0 0 0 A0 to A2 A3 to A25 0 0 0 1 A0 to A3 A4 to A25 0 0 1 1 A0 to A4 A5 to A25 0 1 1 1 A0 to A5 A6 to A25 1 1 1 1 A0 to A6 A7 to A25 Remarks 1. This is the timing for the following case. Wait count based on the DWC0 and DWC1 registers (TDW): 1 Wait count based on the PRC register (TPRW): 1 Wait count based on the ASC register (TASW): 1 2. Broken lines indicate high impedance. 3. n = 0 to 7 Data Sheet U15578EJ1V0DS 43 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (b) 8-bit bus width (byte access), 16-bit bus width (byte/halfword access) (1/2) Parameter Symbol Conditions MIN. MAX. Unit WAIT setup time (to CLKOUT↑) <32> tSWK 8 ns WAIT hold time (from CLKOUT↑) <33> tHKW 0 ns Data input setup time (to CLKOUT↑) <34> tSKID 8 ns Data input hold time (from CLKOUT↑) <35> tHKID 0 ns Off-page data input setup time (to address) <39> tSAID (2 + w + wD + wAS)T − 21 ns Off-page data input setup time (to RD) <40> tSRDID (1.5 + w + wD)T − 21 ns Off-page RD low-level width <171> tWRDL (1.5 + w + wD)T − 10 ns RD high-level width <172> tWRDH (0.5 + wAS)T − 10 ns Data input hold time (from RD↑) <45> tHRDID 0 ns Delay time from RD↑ to data output <46> tDRDOD (0.5 + i)T − 10 ns On-page RD low-level width <173> tWORDL (1.5 + w + wPR)T − 10 ns On-page data input setup time (to address) <64> On-page data input setup time (to RD) <174> tSORDID tSOAID Remarks 1. T = tCYK 2. w: Wait count based on WAIT 3. wD: Wait count based on the DWC0 and DWC1 registers 4. wPR: Wait count based on the PRC register 5. i: Count of idle states inserted when a write cycle follows a read cycle 6. wAS: Address setup wait count based on the ASC register 7. Maintain at least one of the data input hold times tHKID or tHRDID 44 Data Sheet U15578EJ1V0DS (2 + w + wPR + wAS)T − 21 ns (1.5 + w + wPR)T − 21 ns µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (b) 8-bit bus width (byte access), 16-bit bus width (byte/halfword access) (2/2) TASW T1 TDW TW T2 TASW TO1 TPRW TW TO2 CLKOUT (output) CSn (output) AddressNote (output) <34> <39> <64> UWR, LWR (output) <174> <40> <171> <172> <173> RD (output) <45> <34> <35> <35> D0 to D15 (I/O) <33> <33> <32> <33> <32> <32> <32> <33> <46> WAIT (input) BCYST (output) Note On-page and off-page addresses are as follows. PRC Register MA6 MA5 MA4 MA3 On-Page Address Off-Page Address 0 0 0 0 A0 to A2 A3 to A25 0 0 0 1 A0 to A3 A4 to A25 0 0 1 1 A0 to A4 A5 to A25 0 1 1 1 A0 to A5 A6 to A25 1 1 1 1 A0 to A6 A7 to A25 Remarks 1. This is the timing for the following case. Wait count based on the DWC0 and DWC1 registers (TDW): 1 Wait count based on the PRC register (TPRW): 1 Wait count based on the ASC register (TASW): 1 2. Broken lines indicate high impedance. 3. n = 0 to 7 Data Sheet U15578EJ1V0DS 45 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (7) DRAM access timing (a) Read timing (EDO DRAM) (1/3) Parameter Symbol Conditions MIN. MAX. 8 Unit Data input setup time (to CLKOUT↓) <34> tSKID ns Data input hold time (from CLKOUT↓) <35> tHKID 0 ns Delay time from OE↑ to data output <46> tDRDOD (1 + i)T − 10 ns Read/write cycle time <65> tHPC (1 + wDA + wCP)T − 10 ns Row address setup time <66> tASR 0.5T − 10 ns Row address hold time <67> tRAH (0.5 + wRH)T − 10 ns Column address setup time <68> tASC 0.5T − 10 ns Column address hold time <69> tCAH (0.5 + wDA)T − 10 ns RAS precharge time <70> tRP wRP = 0 T − 10 ns wRP ≥ 1 wRPT − 10 ns Column address read time (from RAS↑) <71> tRAL (1.5 + wCP + wDA)T − 10 ns CAS hold time <72> tCSH (1.5 + wRH + wDA)T − 10 ns Delay time from RAS to column address <73> tRAD (0.5 + wRH)T − 10 ns RAS to CAS delay time <74> tRCD (1 + wRH)T − 10 ns CAS to RAS precharge time <75> tCRP wRP = 0 1.5T − 10 ns wRP ≥ 1 (0.5 + wRP)T − 10 ns (1.5 + wCP + wDA)T − 10 ns wRP = 0 (3 + wRH)T − 10 ns wRP ≥ 1 RAS hold time from CAS precharge <76> tRHCP WE setup time (to CAS↓) <77> tRCS (2 + wRP + wRH)T − 10 ns WE hold time (from RAS↑) <78> tRRH (1 + i)T − 10 ns WE hold time (from CAS↑) <79> tRCH (1.5 + i)T − 10 ns RAS pulse width <80> tRASP (2 + wRH + wDA)T − 10 ns <81> tHCAS (0.5 + wDA)T − 10 ns Off-page CAS pulse width CAS precharge time CAS hold time from OE Off-page On-page Access time to CAS precharge <82> tCP <83> tOCH1 <84> tOCH2 <85> tACP (0.5 + wCP)T − 10 ns wRP = 0 (2.5 + wRH + wDA)T − 10 ns wRP ≥ 1 (1.5 + wRP + wRH + wDA)T − 10 ns (0.5 + wCP + wDA)T − 10 ns (1.5 + wCP + wDA)T − 21 ns Data input hold time (from CAS↓) <86> tDHC CAS access time <87> tCAC (1 + wDA)T − 21 ns Access time from column address <88> tAA (1.5 + wDA)T − 21 ns 46 0 Data Sheet U15578EJ1V0DS ns µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (a) Read timing (EDO DRAM) (2/3) Parameter Output enable access time Symbol Off-page <89> tOEA1 Conditions MIN. MAX. Unit wRP = 0 (3 + wRP + wRH + wDA)T − 21 ns wRP ≥ 1 (2 + wRP + wRH + wDA)T − 21 ns <90> tOEA2 (1 + wCP + wDA)T − 21 ns RAS access time <91> tRAC (2 + wRH + wDA)T − 21 ns Output buffer turn-off delay time (from OE) <92> tOEZ Off-page 0 ns Cautions 1. At least one clock is inserted in wRP by default regardless of the setting of the RPC1n and RPC0n bits in the SCRn register (n = 1, 3, 4, or 6) 2. The WAIT signal cannot be controlled using the BCYST signal when using EDO DRAM. Remarks 1. T = tCYK 2. wDA: Wait count based on the DAC1n and DAC0n bits of the SCRn register (n = 1, 3, 4, 6) 3. wCP: Wait count based on the CPC1n and CPC0n bits of the SCRn register (n = 1, 3, 4, 6) 4. wRP: Wait count based on the RPC1n and RPC0n bits of the SCRn register (n = 1, 3, 4, 6) 5. wRH: Wait count based on the RHC1n and RHC0n bits of the SCRn register (n = 1, 3, 4, 6) 6. i: Idle state counts Data Sheet U15578EJ1V0DS 47 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (a) Read timing (EDO DRAM) (3/3) TRPW Note 1 T1 TRHW T2 TDAW TCPW TB TDAW TE CLKOUT (output) <68> <66> <67> <69> Row address A0 to A25 (output) Column address Column address <71> <73> <88> <70> <80> RASn (output) <72> <75> <76> <74> <81> <82> <87> UCAS (output) LCAS (output) <77> <65> <81> <78> <85> <79> WE (output) <84> <83> <90> <34> <46> Note 2 OE (output) <86> <87> <88> <34> <35> Data D0 to D15 (I/O) <92> <35> Data <91> <89> BCYST (output) WAIT (input) Notes 1. At least one clock is inserted in TRPW cycle. 2. During on-page access from other cycles while RAS is low level. Remarks 1. This is the timing for the following case. Wait count based on the RPC1n and RPC0n bits of the SCRn register (TRPW): 1 Wait count based on the RHC1n and RHC0n bits of the SCRn register (TRHW): 1 Wait count based on the DAC1n and DAC0n bits of the SCRn register (TDAW): 1 Wait count based on the CPC1n and CPC0n bits of the SCRn register (TCPW): 1 2. Broken lines indicate high impedance. 3. n = 1, 3, 4, 6 48 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (b) Write timing (EDO DRAM) (1/2) Parameter Symbol Conditions MIN. wCP = 0 (2 + wDA)T − 10 wCP ≥ 1 MAX. Unit Read/write cycle time <65> tHPC (1 + wDA + wCP)T − 10 ns Row address setup time <66> tASR 0.5T − 10 ns Row address hold time <67> tRAH (0.5 + wRH)T − 10 ns Column address setup time <68> tASC 0.5T − 10 ns Column address hold time <69> tCAH (0.5 + wDA)T − 10 ns RAS precharge time <70> tRP Column address read time (from RAS↓) <71> tRAL ns wRP = 0 T − 10 ns wRP ≥ 1 wRPT − 10 ns wCP = 0 (2.5 + wDA)T − 10 ns wCP ≥ 1 (1.5 + wCP + wDA)T − 10 ns CAS hold time <72> tCSH (1.5 + wRH + wDA)T − 10 ns Delay time from RAS to column address <73> tRAD (0.5 + wRH)T − 10 ns RAS to CAS delay time <74> tRCD (1 + wRH)T − 10 ns CAS to RAS precharge time <75> tCRP wRP = 0 1.5T − 10 ns wRP ≥ 1 (0.5 + wRP)T − 10 ns wCP = 0 (2.5 + wDA)T − 10 ns wCP ≥ 1 (1.5 + wCP + wDA)T − 10 ns (2 + wRH + wDA)T − 10 ns RAS hold time from CAS precharge RAS pulse width Off-page <76> tRHCP <80> tRASP CAS pulse width <81> tHCAS CAS precharge time <82> tCP RAS hold time WE setup time (to CAS↓) Off-page On-page tRSH <94> tWCS1 <95> tWCS2 ns 1.5T − 10 ns wCP ≥ 1 (0.5 + wCP)T − 10 ns (1 + wDA)T − 10 ns wRP = 0 (2 + wRH)T − 10 ns wRP ≥ 1 (1 + wRP + wRH)T − 10 ns wCP = 0 T − 10 ns wCP ≥ 1 wCPT − 10 ns <96> tWCH (1 + wDA)T − 10 ns Off-page <97> tDS1 (1.5 + wRH)T − 10 ns On-page <98> tDS2 1.5T − 10 ns <99> tDH <100> tWP WE hold time (from CAS↓) Data setup time (to CAS↓) <93> (0.5 + wDA)T − 10 wCP = 0 wCP = 0 wCP ≥ 1 Data hold time (from CAS↓) WE pulse width On-page (0.5 + wCP)T − 10 ns (0.5 + wDA)T − 10 ns wCP = 0 (2 + wDA)T − 10 ns wCP ≥ 1 (1 + wDA + wCP)T − 10 ns WE read time (from RAS↑) On-page <101> tRWL wCP = 0 (2 + wDA)T − 10 ns wCP ≥ 1 (1 + wDA + wCP)T − 10 ns WE read time (from CAS↑) On-page <102> tCWL wCP = 0 (1.5 + wDA)T − 10 ns wCP ≥ 1 (0.5 + wDA + wCP)T − 10 ns Data Sheet U15578EJ1V0DS 49 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) Cautions 1. At least one clock is inserted in wRP by default regardless of the setting of the RPC1n and RPC0n bits in the SCRn register (n = 1, 3, 4, 6). 2. At least one clock is inserted in wCP by default regardless of the setting of the CPC1n and CPC0n bits in the SCRn register (n = 1, 3, 4, 6). 3. The WAIT signal cannot be controlled using the BCYST signal when using EDO DRAM. Remarks 1. T = tCYK 2. wDA: Wait count based on the DAC1n and DAC0n bits of the SCRn register (n = 1, 3, 4, 6) 3. wCP: Wait count based on the CPC1n and CPC0n bits of the SCRn register (n = 1, 3, 4, 6) 4. wRP: Wait count based on the RPC1n and RPC0n bits of the SCRn register (n = 1, 3, 4, 6) 5. wRH: Wait count based on the RHC1n and RHC0n bits of the SCRn register (n = 1, 3, 4, 6) 50 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (b) Write timing (EDO DRAM) (2/2) Note 1 TRPW Note 1 T1 TRHW T2 TDAW TCPW TB TDAW TE CLKOUT (output) <66> <68> <67> A0 to A25 (output) <69> Row address <68> Column address <69> Column address <73> <71> <70> <80> RASn (output) <72> <75> <74> <76> <81> <82> <93> UCAS (output) LCAS (output) <65> <81> <102> <101> RD (output) OE (output) <95> <94> <96> <100> <96> Note 2 WE (output) <97> D0 to D15 (I/O) Read → Write D0 to D15 (I/O) Write → Write <99> <98> Data Data <99> Data Data BCYST (output) WAIT (input) Notes 1. At least one clock is inserted in TRPW and TCPW cycles. 2. During on-page access from other cycles while RAS is low level. Remarks 1. This is the timing for the following case. Wait count based on the RPC1n and RPC0n bits of the SCRn register (TRPW): 1 Wait count based on the RHC1n and RHC0n bits of the SCRn register (TRHW): 1 Wait count based on the DAC1n and DAC0n bits of the SCRn register (TDAW): 1 Wait count based on the CPC1n and CPC0n bits of the SCRn register (TCPW): 1 2. Broken lines indicate high impedance. 3. n = 1, 3, 4, 6 Data Sheet U15578EJ1V0DS 51 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (c) DMA flyby transfer timing (EDO DRAM → external I/O transfer) (1/3) Parameter Symbol Conditions MIN. tSWK 8 MAX. Unit WAIT setup time (to CLKOUT↑) <32> ns WAIT hold time (from CLKOUT↑) <33> tHKW 0 ns Delay time from OE↑ to data output <46> tDRDOD (1 + i)T − 10 ns Delay time from IOWR↑ to address <53> tDWRA 1.5T − 10 ns IOWR low-level width <55> tWWRL wRP = 0 (3 + wRH + wDA + w)T − 10 ns wRP ≥ 1 (2 + wRP + wDA + wRH + w)T − 10 ns Delay time from IOWR↑ to OE↑ <58> tDWRRD T − 10 ns Row address setup time <66> tASR 0.5T − 10 ns Row address hold time <67> tRAH (0.5 + wRH)T − 10 ns Column address setup time <68> tASC 0.5T − 10 ns Column address hold time <69> tCAH (2.5 + wDA + w)T − 10 ns RAS precharge time <70> tRP wRP = 0 T − 10 ns wRP ≥ 1 wRPT − 10 ns Column address read time (to RAS) <71> tRAL (3.5 + wCP + wDA + w)T − 10 ns CAS hold time <72> tCSH (3 + wRH + wDA + w)T − 10 ns RAS to column address delay time <73> tRAD (0.5 + wRH)T − 10 ns RAS to CAS delay time <74> tRCD CAS to RAS precharge time <75> tCRP RAS hold time from CAS precharge <76> tRHCP WE setup time (to CAS↓) <77> tRCS (1 + wRH)T − 10 ns wRP = 0 2T − 10 ns wRP ≥ 1 (1 + wRP)T − 10 ns (4 + wCP + wDA + w)T − 10 ns wRP = 0 (3 + wRH)T − 10 ns wRP ≥ 1 (2 + wRP + wRH)T − 10 ns WE hold time (from RAS↑) <78> tRRH 0 ns WE hold time (from CAS↑) <79> tRCH T − 10 ns RAS pulse width <80> tRASP (4 + wRH + wDA + w)T − 10 ns <82> tCP (1 + wCP)T − 10 ns Off-page <83> tOCH1 wRP = 0 (4 + wRH + wDA + w)T − 10 ns wRP ≥ 1 (3 + wRP + wRH + wDA + w)T − 10 ns On-page <84> tOCH2 (2 + wCP + wDA + w)T − 10 ns Output buffer turn-off delay time (from OE↑) <92> tOEZ 0 ns RAS hold time <93> tRSH (3 + wDA + w)T − 10 ns Read/write cycle time <103> tRC wRP = 0 (5.5 + wRH + wDA + w)T − 10 ns wRP ≥ 1 (4.5 + wRP + wRH + wDA + w)T − 10 ns CAS pulse width <104> tCAS (2 + wDA + w)T − 10 ns CAS precharge time <105> tCPN WRP = 0 (3 + wRH)T − 10 ns WRP ≥ 1 (2 + wRP + wRH)T − 10 ns (3 + wCP + wDA + w)T − 10 ns Off-page CAS precharge time OE → CAS hold time High-speed page mode cycle time 52 <106> tPC Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (c) DMA flyby transfer timing (EDO DRAM → external I/O transfer) (2/3) Parameter Symbol Delay time from DMAAKm↓ to CAS↓ <107> tDDACS Delay time from IOWR↓ to CAS↓ <108> tDRDCS Output buffer turn-off delay time (from CAS↑) Cautions <109> Conditions MIN. MAX. Unit wRP = 0 (2.5 + wRH)T − 10 wRP ≥ 1 (1.5 + wRP + wRH)T − 10 ns wRP = 0 (2 + wRH)T − 10 ns wRP ≥ 1 (1 + wRP + wRH)T − 10 ns 0 ns tOFF ns 1. At least one clock is inserted in wRP by default regardless of the setting of the RPC1n and RPC0n bits in the SCRn register (n = 1, 3, 4, 6). 2. The WAIT signal cannot be controlled using the BCYST signal when using EDO DRAM. Remarks 1. T = tCYK 2. w: Wait count based on WAIT 3. wDA: Wait count based on the DAC1n and DAC0n bits of the SCRn register (n = 1, 3, 4, 6) 4. wCP: Wait count based on the CPC1n and CPC0n bits of the SCRn register (n = 1, 3, 4, 6) 5. wRP: Wait count based on the RPC1n and RPC0n bits of the SCRn register (n = 1, 3, 4, 6) 6. wRH: Wait count based on the RHC1n and RHC0n bits of the SCRn register (n = 1, 3, 4, 6) 7. i: Idle state count 8. m = 0 to 3 Data Sheet U15578EJ1V0DS 53 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (c) DMA flyby transfer timing (EDO DRAM → external I/O transfer) (3/3) Note TRPW T1 TRHW <66> <68> <67> T2 TDAW TW TF TE TCPW TB TDAW TW TF TE CLKOUT (output) <69> Row address A0 to A23 (output) <70> Column address <73> Column address <71> <80> <103> RASn (output) <74> <75> UCAS (output) LCAS (output) <104> <72> <105> <83> <82> <76> <106> <78> <93> <79> <84> <109> OE (output) <107> <58> DMAAKm (output) <77> WE (output) IORD (output) <108> <46> <53> <55> <92> IOWR (output) <32> Data D0 to D15 (I/O) <33> <32> Data <32> <33> <33> WAIT (input) BCYST (output) Note At least one clock is inserted in TRPW cycle. Remarks 1. This is the timing for the following case. Wait count based on the RPC1n and RPC0n bits of the SCRn register (TRPW): 1 Wait count based on the RHC1n and RHC0n bits of the SCRn register (TRHW): 1 Wait count based on the DAC1n and DAC0n bits of the SCRn register (TDAW): 1 Wait count based on the CPC1n and CPC0n bits of the SCRn register (TCPW): 1 2. Broken lines indicate high impedance. 3. n = 1, 3, 4, 6, m = 0 to 3 54 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (d) DMA flyby transfer timing (external I/O → EDO DRAM transfer) (1/3) Parameter Symbol Conditions MIN. 8 MAX. Unit WAIT setup time (to CLKOUT↑) <32> tSWK ns WAIT hold time (from CLKOUT↑) <33> tHKW 0 ns IORD low-level width <41> tWRDL (2 + wRH + wDA + w)T − 10 ns IORD high-level width <42> tWRDH T − 10 ns Delay time from IORD↑ to address <44> tDRDA (0.5 + i)T − 10 ns Row address setup time <66> tASR 0.5T − 10 ns Row address hold time <67> tRAH (0.5 + wRH)T − 10 ns Column address setup time <68> tASC 0.5T − 10 ns Column address hold time <69> tCAH (1.5 + wDA)T − 10 ns RAS precharge time <70> tRP wRP = 0 T − 10 ns wRP ≥ 1 wRPT − 10 ns Column address read time (from RAS) <71> tRAL (2.5 + wCP + wDA + w)T − 10 ns CAS hold time <72> tCSH (2 + wRH + wDA + w)T − 10 ns RAS to column address delay time <73> tRAD (0.5 + wRH)T−10 ns RAS to CAS delay time <74> tRCD (1 + wRH + w)T − 10 ns CAS to RAS precharge time <75> tCRP wRP = 0 2T − 10 ns wRP ≥ 1 (1 + wRP)T − 10 ns RAS hold time from CAS precharge <76> tRHCP (4 + wCP + wDA + w)T − 10 ns RAS pulse width <80> tRASP (3 + wRH + wDA + w)T − 10 ns CAS precharge time <82> tCP (1 + wCP + w)T − 10 ns RAS hold time <93> tRSH (2 + wDA)T − 10 ns Read/write cycle time <103> tRC wRP = 0 (4.5 + wRH + wDA + w)T − 10 ns wRP ≥ 1 (3.5 + wRP + wRH + wDA + w)T − 10 ns (1 + wDA)T − 10 ns wRP = 0 (3 + wRH + w)T − 10 ns wRP ≥ 1 (2 + wRP + wRH + w)T − 10 ns (2 + wCP + wDA + w)T − 10 ns wRP = 0 (2.5 + wRH + w)T − 10 ns wRP ≥ 1 (1.5 + wRP + wRH + w)T − 10 ns wRP = 0 (2 + wRH + w)T − 10 ns wRP ≥ 1 (1 + wRP + wRH + w)T − 10 ns tRWL (3 + wDA + w)T − 10 ns Off-page CAS pulse width <104> tCAS CAS precharge time <105> tCPN High-speed page mode cycle time <106> tPC Delay time from DMAAKm↓ to CAS↓ <107> tDDACS Delay time from IORD↓ to CAS↓ <108> tDRDCS WE read time (from RAS↑) <110> WE read time (from CAS↑) <111> tCWL (2 + wDA + w)T − 10 ns WE pulse width <112> tWP (2 + wDA + w)T − 10 ns Off-page <113> tWCS1 (2 + wRH + w)T − 10 ns On-page <114> tWCS2 T − 10 ns WE setup time (to CAS↓) Data Sheet U15578EJ1V0DS 55 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (d) DMA flyby transfer timing (external I/O → EDO DRAM transfer) (2/3) Parameter Symbol WE hold time (from CAS↓) <115> tWCH Delay time from WE↑ to IORD↑ <116> tDWERD Conditions MIN. MAX. Unit (1 + wDA)T − 10 ns 0 ns Cautions 1. At least one clock is inserted in wRP by default regardless of the setting of the RPC1n and RPC0n bits in the SCRn register (n = 1, 3, 4, 6). 2. At least one clock is inserted in wCP by default regardless of the setting of the CPC1n and CPC0n bits in the SCRn register (n = 1, 3, 4, 6). 3. The WAIT signal cannot be controlled using the BCYST signal when using EDO DRAM. Remarks 56 1. 2. 3. 4. 5. 6. 7. 8. T = tCYK w: Wait counts based on WAIT wDA: Wait count based on the DAC1n and DAC0n bits of the SCRn register (n = 1, 3, 4, 6) wCP: Wait count based on the CPC1n and CPC0n bits of the SCRn register (n = 1, 3, 4, 6) wRP: Wait count based on the RPC1n and RPC0n bits of the SCRn register (n = 1, 3, 4, 6) wRH: Wait count based on the RHC1n and RHC0n bits of the SCRn register (n = 1, 3, 4, 6) i: Idle state count m = 0 to 3 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (d) DMA flyby transfer timing (external I/O → EDO DRAM transfer) (3/3) Note TRPW Note T1 TRHW TW T2 TDAW TE TCPW TW TB TDAW TE CLKOUT (output) <66> A0 to A23 (output) <68> <67> <69> Column address Row address <73> <70> Column address <71> <80> <103> RASn (output) <74> <75> UCAS (output) LCAS (output) <104> <93> <82> <72> <105> <106> <76> RD (output) OE (output) <114> <110> <111> <115> <113> WE (output) <112> <107> DMAAKm (output) IOWR (output) <108> <116> <44> IORD (output) <41> <42> <33> Data D0 to D15 (I/O) <32> <32> <33> <32> Data <33> WAIT (input) BCYST (output) Note At least one clock is inserted in TRPW and TCPW cycles. Remarks 1. This is the timing for the following case. Wait count based on the RPC1n and RPC0n bits of the SCRn register (TRPW): Wait count based on the RHC1n and RHC0n bits of the SCRn register (TRHW): Wait count based on the DAC1n and DAC0n bits of the SCRn register (TDAW): Wait count based on the CPC1n and CPC0n bits of the SCRn register (TCPW): 1 1 1 1 2. Broken lines indicate high impedance. 3. n = 1, 3, 4, 6, m = 0 to 3 Data Sheet U15578EJ1V0DS 57 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (e) CBR refresh timing Parameter Symbol RAS precharge time <70> Conditions MIN. MAX. Unit (1.5 + wRRW)T − 10 tRP ns RAS pulse width <117> tRAS (1.5 + wRCW )T − 10 ns CAS hold time <118> tCHR (0.5 + wRCWNote)T − 10 ns Note (3 + wRRW + wRCW )T − 10 Note REFRQ pulse width <119> tWRFL ns RAS precharge CAS hold time <120> tRPC (2.5 + wRRW)T − 10 REFRQ active delay time (from CLKOUT↑) <121> tDKRF 2 13 ns REFRQ inactive delay time (from CLKOUT↑) <122> tHKRF 2 13 ns CAS setup time <123> tCSR T − 10 ns ns Note At least one clock is inserted in wRCW by default, regardless of the settings of the RCW0 to RCW2 bits of the RWC register. Remarks 1. T = tCYK 2. wRRW: Wait count based on the RRW0 and RRW1 bits of the RWC register 3. wRCW: Wait count based on the RCW0 to RCW2 bits of the RWC register Note 1 TRRW T1 T2 TRCW Note 2 TRCW T3 T4 TI Note 2 TI CLKOUT (output) <122> <121> <119> REFRQ (output) <70> <117> RASn (output) <120> <123> <118> <120> UCAS (output) LCAS (output) Notes 1. At least one clock is inserted in TRCW, regardless of the settings of the RCW0 to RCW2 bits of the RWC register. 2. Idle state (TI) independent of the setting of the BCC register Remarks 1. This is the timing for the following case. Wait count based on the RRW0 and RRW1 bits of the RWC register (TRRW): 1 Wait count based on the RCW0 to RCW2 bits of the RWC register (TRCW): 2 2. n = 0 to 7 58 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (f) CBR self-refresh timing Parameter Symbol Conditions MIN. MAX. Unit REFRQ active delay time (from CLKOUT↑) <121> tDKRF 2 13 ns REFRQ inactive delay time (from CLKOUT↑) <122> tHKRF 2 13 ns CAS hold time <124> tCHS −(wRCWT − 10) ns RAS precharge time <125> tRPS wRP = 0 (3 + 2wSRW)T − 10 ns wRP ≥ 1 (2 + 2wSRW + wRPW)T − 10 ns Remarks 1. T = tCYK 2. wSRW: Wait count based on the SRW0 to SRW2 bits of the RWC register 3. wRCW: Wait count based on the RCW0 to RCW2 bits of the RWC register 4. wRPW: Wait count based on the RRW0 and RRW1 bits of the RWC register Note TRRW TRCW TSRW TSRW T1 CLKOUT (output) <121> <122> REFRQ (output) <125> RASn (output) <124> UCAS (output) LCAS (output) Note At least one clock is inserted in TRCW, regardless of the settings of the RCW0 to RCW2 bits of the RWC register. Remarks 1. This is the timing for the following case. Wait count based on the RRW0 and RRW1 bits of the RWC register (TRRW): 1 Wait count based on the RCW0 to RCW2 bits of the RWC register (TRCW): 1 Wait count based on the SRW0 to SRW2 bits of the RWC register (TSRW): 1 (Wait count of 2× setting value is inserted) 2. 1, 3, 4, 6 Data Sheet U15578EJ1V0DS 59 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (8) SDRAM access timing (a) Read timing (SDRAM access) (1/2) Parameter Symbol Conditions MIN. MAX. Unit Address delay time (from SDCLK↑) <126> tDKA 2 13 ns BCYST delay time (from SDCLK↑) <127> tDKBC 2 13 ns CSn delay time (from SDCLK↑) <128> tDKCS 2 13 ns SDRAS delay time (from SDCLK↑) <129> tDKRAS 2 13 ns SDCAS delay time (from SDCLK↑) <130> tDKCAS 2 13 ns UDQM, LDQM delay time (from SDCLK↑) <131> tDKDQM 2 13 ns SDCKE delay time (from SDCLK↑) <132> tDKCKE 2 13 Data input setup time (at SDRAM read, to SDCLK↑) <133> tSDRMK 8 ns Data input hold time (at SDRAM read, from SDCLK↑) <134> tHKDRM 0 ns Delay time from SDCLK↑ to data output <135> tDSDOD Remarks 1. T = tCYK2 2. i = Idle state count 3. n = 1, 3, 4, 6 60 Data Sheet U15578EJ1V0DS (1 + i)T − 5 ns ns µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (a) Read timing (SDRAM access) (2/2) TW TACT TBCW TREAD TLATE TLATE SDCLK (output) <126> <126> Bank address and addresses other than A10 and A0 to A9 (output) Address <126> <126> Address Bank address (output) <126> <126> Address A10 (output) <126> Bank address Row address <126> <126> <126> Row Address address A0 to A9 (output) <127> Column address <127> BCYST (output) <128> <128> CSn (output) <129> <129> SDRAS (output) <130> <130> SDCAS (output) RD (output) OE (output) WE (output) <131> <131> <131> <131> LDQM (output) UDQM (output) <135> <133> <134> D0 to D15 (I/O) Data <132> <132> SDCKE (output) Remarks 1. Wait count based on the BCW1n and BCW0n bits of the SCRn register (TBCW): 2 2. Broken lines indicate high impedance. 3. n = 1, 3, 4, 6 Data Sheet U15578EJ1V0DS 61 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (b) Write timing (SDRAM access) (1/2) Parameter Symbol Conditions MIN. MAX. Unit Address delay time (from SDCLK↑) <126> tDKA 2 13 ns BCYST delay time (from SDCLK↑) <127> tDKBC 2 13 ns CSn delay time (from SDCLK↑) <128> tDKCS 2 13 ns SDRAS delay time (from SDCLK↑) <129> tDKRAS 2 13 ns SDCAS delay time (from SDCLK↑) <130> tDKCAS 2 13 ns UDQM, LDQM delay time (from SDCLK↑) <131> tDKDQM 2 13 ns SDCKE delay time (from SDCLK↑) <132> tDKCKE 2 13 ns WE delay time (from SDCLK↑) <136> tDKWE 2 13 ns Data output delay time (from SDCLK↑) <137> tDKDT 2 13 ns Data float delay time (from SDCLK↑) <138> tHZKDT 2 13 ns Remark n = 1, 3, 4, 6 62 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (b) Write timing (SDRAM access) (2/2) TW TACT TBCW TWR1 TWR2 TWR3 SDCLK (output) <126> <126> Bank address and addresses other than A10 and A0 to A9 (output) Address <126> Bank address (output) <126> Address <126> A10 (output) Bank address <126> Address <126> <126> Row address <126> <126> Row Address address A0 to A9 (output) <127> Column address <127> BCYST (output) <128> <128> CSn (output) <129> <129> SDRAS (output) <130> <130> <136> <136> <131> <131> <131> <131> SDCAS (output) RD (output) OE (output) WE (output) LDQM (output) UDQM (output) <137> D0 to D15 (I/O) <138> Data <132> <132> SDCKE (output) Remarks 1. Wait count based on the BCW1n and BCW0n bits of the SCRn register (TBCW): 2 2. Broken lines indicate high impedance. 3. n = 1, 3, 4, 6 Data Sheet U15578EJ1V0DS 63 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (9) DMAC timing Parameter Symbol DMARQn setup time (to CLKOUT↑) <139> tSDRK DMARQn hold time <140> tHKDR1 <141> tHKDR2 Second DMA request disable timing in single transfer <142> tAKDR DMAAKn output delay time (from CLKOUT↑) <143> tDKDA DMAAKn output hold time (from CLKOUT↑) <144> TCn output delay time (from CLKOUT↑) TCn output hold time (from CLKOUT↑) Conditions MIN. After inactive (from CLKOUT↑) MAX. 8 ns 3 ns Until DMAAKn↓ ns 3T ns 2 13 ns tHKDA 2 13 ns <145> tHKTC 2 13 ns <146> tHKTC 2 13 ns Remarks 1. T = tCYK 2. n = 0 to 3 CLKOUT (output) <141> <140> DMARQn (input) <139> <142> <144> <143> DMAAKn (output) <145> <146> TCn (output) Remarks 1. In 2-cycle transfer, the TCn signal is output in the write cycle. 2. n = 0 to 3 64 Unit Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (10) Bus hold timing (1/2) Parameter Symbol HLDRQ setup time (to CLKOUT↑) <147> HLDRQ hold time (from CLKOUT↑) Delay time from CLKOUT↑ to HLDAK Conditions MIN. MAX. Unit tSHRK 8 <148> tHKHR 3 <149> tDKHA 2 HLDRQ high-level width <150> tWHQH T+3 ns HLDAK low-level width <151> tWHAL T − 11 ns Delay time from HLDAK↓ to bus float <152> tDKCF 0 ns Delay time from HLDAK↑ to bus output <153> tDHAC Delay time from HLDRQ↓ to HLDAK↓ <154> tDHQHA1 2T Delay time from HLDRQ↑ to HLDAK↑ <155> tDHQHA2 T Remark 2 ns ns 13 13 ns ns ns 2T + 10 ns T = tCYK Data Sheet U15578EJ1V0DS 65 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (10) Bus hold timing (2/2) TI TH TH TH TI CLKOUT (output) <148> <147> <148> <147> <147> <150> HLDRQ (input) <149> <149> <154> <155> HLDAK (output) <151> <152> A0 to A25 (output) D0 to D15 (I/O) Address Data CSn/RASn (output) BCYST (output) RD (output) WE (output) UCAS (output) LCAS (output) WAIT (input) Remarks 1. Broken lines indicate high impedance. 2. n = 0 to 7 66 Data Sheet U15578EJ1V0DS <153> Undefined T1 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (11) Interrupt timing Parameter Symbol Conditions MIN. MAX. Unit NMI high-level width <156> tWNIH 500 ns NMI low-level width <157> tWNIL 500 ns INTP0nm high-level width <158> tWIT0H 3T + 500 ns INTP0nm low-level width <159> tWIT0L 3T + 500 ns INTP1nm high-level width <160> tWIT1H 500 ns INTP1nm low-level width <161> tWIT1L 500 ns Remarks 1. INTP0nm: n = 0 to 3, m = 0, 1 INTP1nm: n = 0 to 3, m = 0 to 3 2. T = tCYK <156> <157> <158> <159> <160> <161> NMI (input) INTP0nm (input) INTP1nm (input) Remark INTP0nm: n = 0 to 3, m = 0, 1 INTP1nm: n = 0 to 3, m = 0 to 3 (12) RPU timing Parameter Symbol Conditions MIN. MAX. Unit TI0n0 high-level width <162> tWTIH 3T + 500 ns TI0n0 low-level width <163> tWTIL 3T + 500 ns Remarks 1. n = 0 to 3 2. T = tCYK <162> <163> TI0n0 (input) Remark n = 0 to 3 Data Sheet U15578EJ1V0DS 67 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (13) CSI0 to CSI2 timing (1/3) (a) Master mode Parameter Symbol Conditions MIN. MAX. Unit SCKn cycle <164> tCYSK1 Output 320 ns SCKn high-level width <165> tWSK1H Output 0.5tCYSK1 − 20 ns SCKn low-level width <166> tWSK1L Output 0.5tCYSK1 − 20 ns SIn setup time (to SCKn↑) <167> tSSISK 30 ns 30 ns 30 ns 30 ns SIn setup time (to SCKn ↓) SIn hold time (from SCKn↑) <168> tHSKSI SIn hold time (from SCKn ↓) SOn output delay time (from SCKn↓) <169> tDSKSO SOn output delay time (from SCKn ↑) SOn output hold time (from SCKn↑) <170> tHSKSO SOn output hold time (from SCKn ↓) 30 ns 30 ns 0.5tCYSK1 − 5 ns 0.5tCYSK1 − 5 ns Remark n = 0 to 2 (b) Slave mode Parameter Symbol Conditions MIN. MAX. Unit SCKn cycle <164> tCYSK1 Input 200 ns SCKn high-level width <165> tWSK1H Input 90 ns SCKn low-level width <166> tWSK1L Input 90 ns SIn setup time (to SCKn↑) <167> tSSISK 50 ns 50 ns SIn setup time (to SCKn ↓) SIn hold time (from SCKn↑) <168> tHSKSI SIn hold time (from SCKn ↓) SOn output delay time (from SCKn↓) <169> 50 ns 50 ns tDSKSO SOn output delay time (from SCKn ↑) SOn output hold time (from SCKn↑) <170> tHSKSO SOn output hold time (from SCKn ↓) Remark n = 0 to 2 68 Data Sheet U15578EJ1V0DS 50 ns 50 ns tWSK1H ns tWSK1H ns µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (13) CSI0 to CSI2 timing (2/3) (c) Timing when CKPn, DAPn bits of CSICn register = 00 <164> <166> <165> SCKn (I/O) <167> SIn (input) <168> Input data <169> <170> SOn (output) Output data Remarks 1. Broken lines indicate high impedance. 2. n = 0 to 2 (d) Timing when CKPn, DAPn bits of CSICn register = 01 <164> <166> <165> SCKn (I/O) <167> SIn (input) <168> Input data <169> <170> SOn (output) Output data Remarks 1. Broken lines indicate high impedance. 2. n = 0 to 2 Data Sheet U15578EJ1V0DS 69 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) (13) CSI0 to CSI2 timing (3/3) (e) Timing when CKPn, DAPn bits of CSICn register = 10 <164> <166> <165> SCKn (I/O) <167> SIn (input) <168> Input data <169> <170> SOn (output) Output data Remarks 1. Broken lines indicate high impedance. 2. n = 0 to 2 (f) Timing when CKPn, DAPn bits of CSICn register = 11 <164> <166> <165> SCKn (I/O) <167> SIn (input) <168> Input data <169> <170> SOn (output) Output data Remarks 1. Broken lines indicate high impedance. 2. n = 0 to 2 70 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) A/D Converter Characteristics (TA = −40 to +85°°C, VDD = AVDD = 3.0 to 3.6 V, VSS = AVSS = 0 V) Parameter Symbol Conditions MIN. − Resolution TYP. MAX. 10 Unit bit Overall error − ±0.49 %FSR Quantization error − ±1/2 LSB 10 µs Note 1 Conversion time tCONV 5 Sampling time tSAMP Conversion clockNote 2/6 ns − ±0.49 %FSR Full-scale error − ±0.49 %FSR Integral linearity errorNote 3 − ±4 LSB − ±4 LSB −0.3 AVREF + 0.3 V 3.0 3.6 V 10 mA Zero-scale errorNote 1 Note 3 Note 3 Differential linearity error Analog input voltage VWASN AVREF input voltage AVREF AVDD supply current AIDD Notes 1. Remark AVREF = AVDD Excluding quantization error (±0.05 %FSR) 2. Conversion clock is the number of clocks set by the ADM1 resister. 3. Excluding quantization error (±0.5 LSB) LSB: Least Significant Bit FSR: Full Scale Range %FSR is the ratio to the full-scale value. Data Sheet U15578EJ1V0DS 71 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) 5. PACKAGE DRAWING 144-PIN PLASTIC LQFP (FINE PITCH) (20x20) A B 108 109 73 72 detail of lead end S C D R Q 144 1 37 36 F G H I J M K P S N S L M NOTE Each lead centerline is located within 0.08 mm of its true position (T.P.) at maximum material condition. ITEM A MILLIMETERS 22.0±0.2 B C 20.0±0.2 20.0±0.2 D 22.0±0.2 F 1.25 G 1.25 H 0.22±0.05 I 0.08 J 0.5 (T.P.) K 1.0±0.2 L 0.5±0.2 M 0.17 +0.03 −0.07 N P 0.08 1.4 Q 0.10±0.05 R 3° +4° −3° S 1.5±0.1 S144GJ-50-UEN 72 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) 161-PIN PLASTIC FBGA (13x13) ZE ZD w E S B B 14 13 12 11 10 9 8 7 6 5 4 3 2 1 A D P NML K J HG F E DCB A w INDEX MARK S A A y1 A2 S S y e S φb φx M A1 S AB ITEM D MILLIMETERS 13.00±0.10 E 13.00±0.10 w 0.20 A A1 1.48±0.10 A2 0.35±0.06 1.13 e 0.80 b 0.50 +0.05 −0.10 x 0.08 y y1 0.10 0.20 ZD 1.30 ZE 1.30 P161F1-80-EN4-1 Data Sheet U15578EJ1V0DS 73 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) 6. RECOMMENDED SOLDERING CONDITIONS The µPD703103A, 703105A, 703106A, 703106A(A), 703107A, and 703107A(A) should be soldered and mounted under the following recommended conditions. For details of the recommended soldering conditions, refer to the document Semiconductor Device Mounting Technology Manual (C10535E). For soldering methods and conditions other than those recommended below, contact an NEC sales representative. Table 6-1. Surface Mounting Type Soldering Conditions (1) µPD703106AGJ-××× ×××-UEN: 144-pin plastic LQFP (fine pitch) (20 × 20) ××× ×××-UEN: 144-pin plastic LQFP (fine pitch) (20 × 20) µPD703107AGJ-××× ××× Soldering Method Soldering Conditions Recommended Condition Symbol Infrared reflow Package peak temperature: 235°C, Time: 30 seconds max. (at 210°C or higher), Count: Two times or less, Exposure limit: 3 daysNote (after that, prebake at 125°C for 10 to 72 hours) IR35-103-2 VPS Package peak temperature: 215°C, Time: 25 to 40 seconds (at 200°C or higher), Count: Two times or less, Exposure limit: 3 daysNote (after that, prebake at 125°C for 10 to 72 hours) VP15-103-2 Partial heating Pin temperature: 300°C max., Time: 3 seconds max. (per pin row) – (2) µPD703106AF1-××× ×××-EN4: 161-pin plastic FBGA (13 × 13) ××× ×××-EN4: 161-pin plastic FBGA (13 × 13) µPD703107AF1-××× ××× Soldering Method Soldering Conditions Infrared reflow Package peak temperature: 235°C, Time: 30 seconds max. (at 210°C or higher), Count: Two times or less Exposure limit: 7 daysNote (after that, prebake at 125°C for 10 to 72 hours) IR35-107-2 VPS Package peak temperature: 215°C, Time: 25 to 40 seconds (at 200°C or higher), Count: Two times or less Exposure limit: 7 daysNote (after that, prebake at 125°C for 10 to 72 hours) VP15-107-2 Partial heating Pin temperature: 300°C max., Time: 3 seconds max. (per pin row) Note – After opening the dry pack, store it at 25°C or less and 65% RH or less for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). Remark The soldering conditions for the following product is undetermined. • µPD703103AGJ-×××-UEN: 144-pin plastic LQFP (fine pitch) (20 × 20) • µPD703105AGJ-×××-UEN: 144-pin plastic LQFP (fine pitch) (20 × 20) • µPD703106AGJ(A)-×××-UEN: 144-pin plastic LQFP (fine pitch) (20 × 20) • µPD703107AGJ(A)-×××-UEN: 144-pin plastic LQFP (fine pitch) (20 × 20) 74 Recommended Condition Symbol Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) APPENDIX NOTES ON TARGET SYSTEM DESIGN The following shows a diagram of the connection conditions between the in-circuit emulator option board and conversion connector. Design your system making allowances for conditions such as the form of parts mounted on the target system as shown below. Appendix-1. 144-pin Plastic LQFP (Fine Pitch) (20 × 20) Side View In-circuit emulator IE-V850E-MC-A In-circuit emulator option board IE-703107-MC-EM1 206.26 mm Note Conversion connector YQGUIDE YQPACK144SD NQPACK144SD Target system Note YQSOCKET144SDN (sold separately) can be inserted here to adjust the height (height: 3.2 mm). Top View IE-V850E-MC-A Target system IE-703107-MC-EM1 YQPACK144SD, NQPACK144SD, YQGUIDE Connection condition diagram IE-703107-MC-EM1 Connect to IE-V850E-MC-A. 75 mm YQGUIDE YQPACK144SD NQPACK144SD 13.3 mm 31.84 mm 17.99 mm 27.205 mm Remark 21.58 mm Target system The connector for the 161-pin plastic FBGA package is under development. Data Sheet U15578EJ1V0DS 75 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS Note: No connection for CMOS device inputs can be cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to V DD or GND with a resistor, if it is considered to have a possibility of being an output pin. All handling related to the unused pins must be judged device by device and related specifications governing the devices. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the devices with reset function have not yet been initialized. Hence, power-on does not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function. Related document µPD70F3107A, 70F3107A(A) Data Sheet (U15846E) The related documents indicated in this publication may include preliminary versions. However, preliminary versions are not marked as such. V850E/MA1 and V850 Series are trademarks of NEC Corporation. 76 Data Sheet U15578EJ1V0DS µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) Regional Information Some information contained in this document may vary from country to country. Before using any NEC product in your application, pIease contact the NEC office in your country to obtain a list of authorized representatives and distributors. They will verify: • Device availability • Ordering information • Product release schedule • Availability of related technical literature • Development environment specifications (for example, specifications for third-party tools and components, host computers, power plugs, AC supply voltages, and so forth) • Network requirements In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary from country to country. NEC Electronics Inc. (U.S.) NEC Electronics (France) S.A. NEC Electronics Hong Kong Ltd. Santa Clara, California Tel: 408-588-6000 800-366-9782 Fax: 408-588-6130 800-729-9288 Vélizy-Villacoublay, France Tel: 01-3067-58-00 Fax: 01-3067-58-99 Hong Kong Tel: 2886-9318 Fax: 2886-9022/9044 NEC Electronics (France) S.A. NEC Electronics Hong Kong Ltd. NEC Electronics (Europe) GmbH Duesseldorf, Germany Tel: 0211-65 03 01 Fax: 0211-65 03 327 • Branch The Netherlands Eindhoven, The Netherlands Tel: 040-244 58 45 Fax: 040-244 45 80 Representación en España Madrid, Spain Tel: 091-504-27-87 Fax: 091-504-28-60 NEC Electronics Italiana S.R.L. Milano, Italy Tel: 02-66 75 41 Fax: 02-66 75 42 99 Seoul Branch Seoul, Korea Tel: 02-528-0303 Fax: 02-528-4411 NEC Electronics Singapore Pte. Ltd. Novena Square, Singapore Tel: 253-8311 Fax: 250-3583 NEC Electronics Taiwan Ltd. • Branch Sweden Taeby, Sweden Tel: 08-63 80 820 Fax: 08-63 80 388 NEC Electronics (UK) Ltd. Milton Keynes, UK Tel: 01908-691-133 Fax: 01908-670-290 Taipei, Taiwan Tel: 02-2719-2377 Fax: 02-2719-5951 NEC do Brasil S.A. Electron Devices Division Guarulhos-SP, Brasil Tel: 11-6462-6810 Fax: 11-6462-6829 J01.12 Data Sheet U15578EJ1V0DS 77 µPD703103A, 703105A, 703106A, 703106A(A), 703107A, 703107A(A) The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative. License not needed: µPD703103A The customer must judge the need for license: µPD703105A, 703106A, 703106A(A), 703107A, 703107A(A) • The information in this document is current as of November, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4