Composite Transistors XN06401 (XN6401) Silicon PNP epitaxial planer transistor Unit: mm For general amplification +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –60 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO –50 V VEBO –7 V IC –100 mA Peak collector current ICP –200 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) ■ Electrical Characteristics Parameter Collector to base voltage 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 5O Internal Connection 6 Tr1 1 2 5 4 Tr2 3 (Ta=25˚C) Symbol Conditions min typ max Unit VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V Collector cutoff current *1 +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 0.95 2 0.16–0.06 2SB0709A(2SB709A) × 2 elements 5 0.95 +0.2 2.9 –0.05 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.8 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 ICBO VCB = –20V, IE = 0 – 0.1 µA ICEO VCE = –10V, IB = 0 –100 µA Forward current transfer ratio hFE VCE = –10V, IC = –2mA 160 Forward current transfer hFE ratio hFE (small/large)*1 VCE = –10V, IC = –2mA 0.5 460 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF 0.99 – 0.3 – 0.5 V Ratio between 2 elements Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN06401 PT — Ta IC — VCE 500 IC — I B –60 –60 400 300 200 100 –250µA –40 –200µA –30 –150µA –20 –100µA –10 0 0 40 80 120 –20 –10 0 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 0 –100 Collector to emitter voltage VCE (V) IB — VBE IC — VBE Collector current IC (mA) –200 –150 –100 –25˚C –160 –120 –80 –40 –50 Collector to emitter saturation voltage VCE(sat) (V) 25˚C Ta=75˚C –400 VCE(sat) — IC VCE=–5V –200 –250 –300 –10 VCE=–5V Ta=25˚C –300 –200 Base current IB (µA) –240 –350 IC/IB=10 –3 –1 25˚C Ta=75˚C –25˚C –0.3 –0.1 –0.03 –0.01 –0.003 0 0 –0.4 –0.8 –1.2 0 –1.6 –0.4 –1.2 –1.6 Base to emitter voltage VBE Base to emitter voltage VBE (V) hFE — IC 400 Ta=75˚C 25˚C –25˚C 200 100 –10 –30 –100 –300 –1000 140 120 100 80 60 40 Collector current IC (mA) 0 0.1 –30 –100 –300 –1000 Cob — VCB 20 –3 –10 8 VCB=–10V Ta=25˚C Transition frequency fT (MHz) 500 –3 Collector current IC (mA) 160 VCE=–10V 0 –1 –0.001 –1 –2.0 (V) fT — I E 600 300 –0.8 Collector output capacitance Cob (pF) 0 Forward current transfer ratio hFE –30 0 160 –400 2 –40 –50µA Ambient temperature Ta (˚C) Base current IB (µA) VCE=–5V Ta=25˚C –50 Collector current IC (mA) –50 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C IB=–300µA 0.3 1 3 10 30 Emitter current IE (mA) 100 f=1MHz IE=0 Ta=25˚C 7 6 5 4 3 2 1 0 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to base voltage VCB (V) Composite Transistors XN06401 NF — IE NF — IE 20 6 VCB=–5V f=1kHz Rg=2kΩ Ta=25˚C 3 2 1 0.1 0.3 1 3 300 200 hfe 10 Emitter current IE (mA) 100 14 12 Parameter h 4 0 0.01 0.03 VCB=–5V Rg=50kΩ Ta=25˚C 16 Noise figure NF (dB) Noise figure NF (dB) 5 18 h Parameter — IE f=100Hz 10 1kHz 8 50 20 10 10kHz 6 5 4 3 2 2 0 0.1 hoe (µS) 30 0.2 0.3 0.5 1 2 3 5 Emitter current IE (mA) 10 1 0.1 hie (kΩ) VCE=–5V f=270Hz Ta=25˚C hre (×10–4) 0.2 0.3 0.5 1 2 3 5 10 Emitter current IE (mA) h Parameter — VCE 300 200 hfe IE=2mA f=270Hz Ta=25˚C Parameter h 100 50 30 20 hoe (µS) 10 5 3 hre (×10–4) hie (kΩ) 2 1 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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