ETC XN06401

Composite Transistors
XN06401 (XN6401)
Silicon PNP epitaxial planer transistor
Unit: mm
For general amplification
+0.2
2.8 –0.3
+0.25
3
(Ta=25˚C)
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–60
V
Rating Collector to emitter voltage
of
Emitter to base voltage
element
Collector current
VCEO
–50
V
VEBO
–7
V
IC
–100
mA
Peak collector current
ICP
–200
mA
Total power dissipation
PT
300
mW
Overall Junction temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
Storage temperature
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
■ Electrical Characteristics
Parameter
Collector to base voltage
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 5O
Internal Connection
6
Tr1
1
2
5
4
Tr2
3
(Ta=25˚C)
Symbol
Conditions
min
typ
max
Unit
VCBO
IC = –10µA, IE = 0
–60
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
V
Collector cutoff current
*1
+0.1
+0.1
0 to 0.05
0.4±0.2
■ Absolute Maximum Ratings
1.45±0.1
+0.1
4
0.1 to 0.3
Parameter
0.5 –0.05
0.95
2
0.16–0.06
2SB0709A(2SB709A) × 2 elements
5
0.95
+0.2
2.9 –0.05
1.1–0.1
●
+0.2
■ Basic Part Number of Element
1.9±0.1
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
0.8
●
0.65±0.15
1
6
■ Features
●
1.5 –0.05
0.3 –0.05
0.65±0.15
ICBO
VCB = –20V, IE = 0
– 0.1
µA
ICEO
VCE = –10V, IB = 0
–100
µA
Forward current transfer ratio
hFE
VCE = –10V, IC = –2mA
160
Forward current transfer hFE ratio
hFE (small/large)*1
VCE = –10V, IC = –2mA
0.5
460
Collector to emitter saturation voltage
VCE(sat)
IC = –100mA, IB = –10mA
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
80
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
2.7
pF
0.99
– 0.3
– 0.5
V
Ratio between 2 elements
Note.) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
XN06401
PT — Ta
IC — VCE
500
IC — I B
–60
–60
400
300
200
100
–250µA
–40
–200µA
–30
–150µA
–20
–100µA
–10
0
0
40
80
120
–20
–10
0
0
–2 –4 –6 –8 –10 –12 –14 –16 –18
0
–100
Collector to emitter voltage VCE (V)
IB — VBE
IC — VBE
Collector current IC (mA)
–200
–150
–100
–25˚C
–160
–120
–80
–40
–50
Collector to emitter saturation voltage VCE(sat) (V)
25˚C
Ta=75˚C
–400
VCE(sat) — IC
VCE=–5V
–200
–250
–300
–10
VCE=–5V
Ta=25˚C
–300
–200
Base current IB (µA)
–240
–350
IC/IB=10
–3
–1
25˚C
Ta=75˚C
–25˚C
–0.3
–0.1
–0.03
–0.01
–0.003
0
0
–0.4
–0.8
–1.2
0
–1.6
–0.4
–1.2
–1.6
Base to emitter voltage VBE
Base to emitter voltage VBE (V)
hFE — IC
400
Ta=75˚C
25˚C
–25˚C
200
100
–10
–30
–100 –300 –1000
140
120
100
80
60
40
Collector current IC (mA)
0
0.1
–30
–100 –300 –1000
Cob — VCB
20
–3
–10
8
VCB=–10V
Ta=25˚C
Transition frequency fT (MHz)
500
–3
Collector current IC (mA)
160
VCE=–10V
0
–1
–0.001
–1
–2.0
(V)
fT — I E
600
300
–0.8
Collector output capacitance Cob (pF)
0
Forward current transfer ratio hFE
–30
0
160
–400
2
–40
–50µA
Ambient temperature Ta (˚C)
Base current IB (µA)
VCE=–5V
Ta=25˚C
–50
Collector current IC (mA)
–50
Collector current IC (mA)
Total power dissipation PT (mW)
Ta=25˚C
IB=–300µA
0.3
1
3
10
30
Emitter current IE (mA)
100
f=1MHz
IE=0
Ta=25˚C
7
6
5
4
3
2
1
0
–1
–2 –3 –5
–10
–20 –30 –50 –100
Collector to base voltage VCB (V)
Composite Transistors
XN06401
NF — IE
NF — IE
20
6
VCB=–5V
f=1kHz
Rg=2kΩ
Ta=25˚C
3
2
1
0.1
0.3
1
3
300
200
hfe
10
Emitter current IE (mA)
100
14
12
Parameter h
4
0
0.01 0.03
VCB=–5V
Rg=50kΩ
Ta=25˚C
16
Noise figure NF (dB)
Noise figure NF (dB)
5
18
h Parameter — IE
f=100Hz
10
1kHz
8
50
20
10
10kHz
6
5
4
3
2
2
0
0.1
hoe (µS)
30
0.2 0.3 0.5
1
2
3
5
Emitter current IE (mA)
10
1
0.1
hie (kΩ)
VCE=–5V
f=270Hz
Ta=25˚C
hre (×10–4)
0.2 0.3 0.5
1
2
3
5
10
Emitter current IE (mA)
h Parameter — VCE
300
200
hfe
IE=2mA
f=270Hz
Ta=25˚C
Parameter h
100
50
30
20
hoe (µS)
10
5
3
hre (×10–4)
hie (kΩ)
2
1
–1
–2 –3 –5
–10
–20 –30 –50 –100
Collector to emitter voltage VCE (V)
3
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2001 MAR