Composite Transistors XN06543 (XN6543) Silicon NPN epitaxial planer transistor Unit: mm +0.2 For low-noise amplification (2GHz band) 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 15 V Rating Collector to emitter voltage of element Emitter to base voltage Collector current VCEO 10 V VEBO 2 V IC 65 mA PT 200 mW Total power dissipation Overall Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 9Y Internal Connection 6 Tr1 4 ■ Electrical Characteristics Parameter 1 2 5 *1 +0.1 +0.1 0 to 0.05 0.1 to 0.3 ■ Absolute Maximum Ratings 1.45±0.1 +0.1 0.95 4 0.16–0.06 2SC3904 × 2 elements 2 0.95 +0.2 2.9 –0.05 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 5 0.8 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 ● 0.5 –0.05 ■ Features 0.65±0.15 1 6 0.3 –0.05 0.65±0.15 Tr2 3 (Ta=25˚C) Symbol Conditions min typ Collector cutoff current ICBO VCB = 10V, IE = 0 Emitter cutoff current IEBO VEB = 1V, IC = 0 Forward current transfer ratio hFE VCE = 8V, IC = 20mA 50 120 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 8V, IC = 20mA 0.5 0.99 Transition frequency fT VCE = 8V, IC = 20mA 7.0 8.5 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Forward transfer gain | S21e |2 VCE = 8V, IC = 20mA, f = 1.5GHz 0.6 7 max Unit 1 µA 1 µA 300 GHz 1.0 9 Power gain GUM VCE = 8V, IC = 20mA, f = 1.5GHz 10 Noise figure NF VCE = 8V, IC = 7mA, f = 1.5GHz 2.2 pF dB dB 3.0 dB Ratio between 2 elements Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XN06543 PT — Ta IC — VCE 240 IC — VBE 30 120 VCE=8V 25 160 120 80 40 20 200µA 15 150µA 10 100µA 5 0 80 120 160 Ambient temperature Ta (˚C) 2 –25˚C 0.01 1 3 10 30 120 25˚C 80 –25˚C 40 0.3 1 3 10 12 30 0.2 30 100 10 Collector to base voltage VCB (V) 1.2 8 6 4 2 3 1 10 30 100 NF — IC 6 VCE=8V f=1.5GHz Ta=25˚C Noise figure NF (dB) 5 8 6 4 0 0.1 1.0 Collector current IC (mA) 4 3 2 1 2 0 0.8 0 100 VCE=8V f=1.5GHz Ta=25˚C 10 Power gain GUM (dB) Collector output capacitance Cob (pF) 0.4 0.6 VCE=8V f=1.5GHz Ta=25˚C GUM — IC 0.6 10 0.4 fT — IC Collector current IC (mA) 0.8 3 0.2 Base to emitter voltage VBE (V) Ta=75˚C 160 0 0.1 100 f=1MHz IE=0 Ta=25˚C 1 0 12 12 Cob — VCB 1.0 10 200 Collector current IC (mA) 1.2 8 VCE=8V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) Ta=75˚C 25˚C 0.3 6 hFE — IC 1 0.001 0.1 4 240 IC/IB=10 –25˚C 40 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.1 Ta=75˚C 60 0 0 Transition frequency fT (GHz) 40 25˚C 80 20 50µA 0 0 2 100 Collector current IC (mA) 200 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C IB=250µA 0.3 1 3 10 30 Collector current IC (mA) 100 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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