BAR63J ® PIN DIODE FEATURES AND BENEFITS n n n Pin diode for high speed switching of RF signal Low forward voltage Very low capacitance A 35 K DESCRIPTION Single pin diode in SOD-323 package. This diode is intended to be used in mobile phone to switch the RF signal. SOD-323 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VR Continuous reverse voltage 50 V IF Continuous forward current 100 mA 250 mW - 65 to +150 °C Ptot Power Dissipation Tstg Storage temperature range Ts < 55°C Tj Maximum junction temperature 150 °C TL Maximum temperature for soldering 260 °C Value Unit 550 °C/W THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction to ambient (see note 1) Note 1: Epoxy board with recommended pad layout. April 2003 - Ed: 2B 1/4 BAR63J STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions Min. VF Forward voltage drop Tamb = 25°C IF = 100 mA IR Continuous reverse current Tamb = 25°C VR = 50 V Reverse avalanche breakdown voltage IR = 5 µA VBR Typ. Max. Unit 0.95 1.2 V 50 nA 50 V ELECTRICAL CHARACTERISTICS Symbol Ct Parameter Tests Conditions Diode capacitance rf Forward resistance Ls Series inductance trr Charge carrier life time Min. Typ. Max. VR = 0 V F = 1 MHz 0.4 VR = 5 V F = 1 MHz 0.21 0.3 IF = 5 mA F = 100 MHz 1.8 2 IF = 10 mA Fig. 1: Forward current versus ambient temperature (epoxy board with recommended pad layout). IR = 10 mA IR = 6 mA Unit pF Ohm 1.8 nH 125 nS Fig. 2: Average forward power dissipation versus average forward current. IF(mA) PF(AV)(mW) 110 120 δ = 0.1 100 100 δ = 0.2 δ = 0.5 δ = 0.05 90 δ=1 80 80 70 60 60 50 40 40 30 20 20 Tamb(°C) 0 0 2/4 IF(AV)(mA) 10 0 25 50 75 100 125 150 0 25 50 75 100 125 BAS70-07 Fig. 3: Junction capacitance versus reverse voltage applied (typical values). Fig. 4: Forward resistance versus forward current (typical values). RF(W) C(fF) 10.0 500 F=100MHz Tj=25°C F=1MHz VOSC=30mVRMS Tj=25°C 450 400 350 300 1.0 250 200 150 100 50 VR(V) IF(mA) 0 0.1 0 5 10 15 20 25 30 Fig. 5: Thermal resistance junction to ambient versus copper surface under each lead (printed circuit board, epoxy FR4, Cu=35µm). 0.1 1.0 100.0 Fig. 6: Insertion losses from antenna to receiver at VBIAS = 0V and 2.7V. Aplac Rth(j-a)(°C/W) 10.0 7.62 User: ST Microelectronics May 31 2002 0.00 600 550 - 7.50 500 - 15.00 450 @900MHz 400 SOD package - 22.50 350 S(mm²) 100.000k 5 10 15 20 25 30 35 40 45 14.39 1.500G 3.000G f/Hz 4.500G 6.000G SOD 323 0v SOD 323 2.7v 50 Fig. 7: Insertion losses from transceiver to receiver at VBIAS = 0V and 2.7V. Aplac 0.66 isolation dB - 30.00 300 0 insertion losses dB Fig. 8: Insertion losses from transceiver to antenna at VBIAS = 0V and 2.7V. 7.62 User: ST Microelectronics May 31 2002 Aplac 0.00 0.00 - 7.50 - 7.50 7.62 User: ST Microelectronics May 31 2002 - 15.00 - 15.00 @900MHz SOD package isolation dB Vbias 0v 19.84 @900MHz SOD package - 22.50 - 22.50 isolation dB Vbias 2.7v 14.97 insertion losses dB 0.88 isolation dB 19.35 - 30.00 - 30.00 100.000k 100.000k 1.500G SOD 323 0v SOD 323 2.7v 3.000G f/Hz 4.500G 1.500G 6.000G 3.000G f/Hz 4.500G 6.000G SOD 323 0v SOD 323 2.7v 3/4 BAR63J PACKAGE MECHANICAL DATA SOD-323 DIMENSIONS H A1 REF. b Millimeters Min. A E A D c Q1 L Max. Inches Min. 1.17 Max. 0.046 A1 0 0.1 0 0.004 b 0.25 0.44 0.01 0.017 c 0.1 0.25 0.004 0.01 D 1.52 1.8 0.06 0.071 E 1.11 1.45 0.044 0.057 H 2.3 2.7 0.09 0.106 L 0.1 0.46 0.004 0.02 Q1 0.1 0.41 0.004 0.016 MARKING Type Marking Package Weight Base qty Delivery mode BAR63J 35 SOD-323 0.005g 3000 Tape & reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4