STMICROELECTRONICS BAS70W


BAS70J / BAS70W
BAS70-04W /BAS70-05W / BAS70-06W
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
n
n
n
n
K2
NC
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
SURFACE MOUNT DEVICE
K
K
A
K1
A
A
K1
BAS70W
BAS70-06W
A2
DESCRIPTION
Schottky barrier diodes encapsulated either in
SOT-323 or SOD-323 small SMD packages.
Single and double diodes with different pining are
available.
A
K2
NC
K2
A2
K1
K
A2
K
A2
K1
K2
A1
A1
A1
A1
BAS70-04W
BAS70-05W
SOT-323
A
76
K
BAS70J
SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
IF
Parameter
Value
Unit
Repetitive peak reverse voltage
70
V
Continuous forward current
70
mA
IFSM
Surge non repetitive forward current
tp = 10 ms
1
A
Ptot
Power dissipation (note 1)
Tamb = 25°C
SOD-323
230
mW
- 65 to +150
°C
Tstg
SOT-323
Maximum storage temperature range
Tj
Maximum operating junction temperature *
150
°C
TL
Maximum temperature for soldering during 10s
260
°C
Note 1: for double diodes, Ptot is the total dissipation of both diodes.
* :
dPtot
1
<
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j − a )
May 2000 - Ed: 4B
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BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
THERMAL RESISTANCE
Symbol
Rth (j-a)
Parameters
Junction to ambient (*)
SOD-323
Value
Unit
550
°C/W
°C/W
SOT-323
(*) Mounted on epoxy board, with recommended pad layout.
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
VBR
Tj = 25°C
IR = 10µA
VF *
Tj = 25°C
IF = 1mA
410
mV
IR **
Tj = 25°C
VR = 50V
100
nA
Max.
Unit
2
pF
100
ps
Pulse test:
70
V
* tp = 380µs, δ < 2%
** tp = 5 ms, δ < 2%
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
C
Tj = 25°C
F = 1MHz
τ*
Tj = 25°C
IF = 5mA
Krakauer Method
* Effective carrier life time.
2/5
VR = 0V
Min.
Typ.
BAS70-05W / BAS70-06W
BAS70J / BAS70W / BAS70-04W /
Fig. 1: Forward voltage drop versus forward
current.
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
IFM(A)
1E+1
7E-2
Tj=100°C
Typical values
Tj=100°C
1E+0
1E-2
Tj=25°C
Maximum values
1E-1
Tj=25°C
1E-3
Tj=25°C
Typical values
1E-2
VFM(V)
1E-4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 3: Reverse leakage current versus junction
temperature (typical values).
VR(V)
1E-3
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values).
IR(µA)
C(pF)
5E+2
2.0
F=1MHz
Tj=25°C
VR=70V
1E+2
1.0
1E+1
1E+0
1E-1
Tj(°C)
1E-2
0
25
50
75
100
125
150
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4
with
recommended
pad
layout,
S(Cu)=35µm).
0.1
VR(V)
1
10
100
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:
35µm).
Rth(j-a) (°C/W)
Zth(j-a)/Rth(j-a)
600
1.00
550
δ = 0.5
500
δ = 0.2
0.10
450
δ = 0.1
400
T
Single pulse
0.01
1E-3
P=0.2W
1E-2
tp(s)
1E-1
δ=tp/T
1E+0
1E+1
350
S(Cu) (mm )
tp
1E+2
300
0
5
10
15
20
25
30
35
40
45
50
3/5
BAS70J / BAS70W / BAS70-04W / BAS70-05W / BAS70-06W
PACKAGE MECHANICAL DATA
SOT-323
DIMENSIONS
REF.
A
A1
D
b
L
Millimeters
Min.
Typ. Max. Min.
A
0.8
1.1
0.031
0.043
A1
0.0
0.1
0.0
0.004
b
0.25
0.4
0.010
0.016
c
0.1
0.26 0.004
0.010
D
1.8
2.0
2.2
E
1.15
1.25
1.35 0.045 0.049 0.053
e
H
E
θ
c
4/5
e
Inches
Typ. Max.
0.071 0.079 0.086
0.65
0.026
H
1.8
2.1
2.4
0.071 0.083 0.094
L
0.1
0.2
0.3
0.004 0.008 0.012
θ
0
30°
0
30°
BAS70-05W / BAS70-06W
BAS70J / BAS70W / BAS70-04W /
PACKAGE MECHANICAL DATA
SOD-323
H
DIMENSIONS
A1
REF.
b
Millimeters
Min.
E
A
A
D
c
Q1
L
n
Max.
Inches
Min.
1.17
Max.
0.046
A1
0
0.1
0
0.004
b
0.25
0.44
0.01
0.017
c
0.1
0.25
0.004
0.01
D
1.52
1.8
0.06
0.071
E
1.11
1.45
0.044
0.057
H
2.3
2.7
0.09
0.106
L
0.1
0.46
0.004
0.02
Q1
0.1
0.41
0.004
0.016
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
BAS70W
D28
SOT-323
0.006g
3000
Tape & reel
BAS70-04W
D31
SOT-323
0.006g
3000
Tape & reel
BAS70-05W
D30
SOT-323
0.006g
3000
Tape & reel
BAS70-06W
D29
SOT-323
0.006g
3000
Tape & reel
BAS70J
76
SOD-323
0.005g
3000
Tape & reel
Epoxy meets UL94,V0
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