NE W BGB550 Medium power broadband amplifier Bias, 3 L ext ~ nH MMIC Features Featuresand andBenefits Benefits C, 4 --mirror mirrorbiased biasedRF RFtransistor transistor internal circuit --collector collectorcurrent currentup uptoto350mA 350mA --low lowoperation operationvoltage voltageVVCC <<3V 3V CC MP: now RFin --input inputmatching matchingimproved improvedby byLLext ext E, 2,5 B,1 Vd = 2.0V, Id = 100mA Symbol Parameter IS21I2 / (GMA) Power Gain / (max. available) NF WS DS M 1 26.04.2002 Page 1 --high highoutput outputpower power&&linearity linearity Noise Figure P-1dB Output Compression Point OIP3 Output Third Order Intercept Point --SCT595 SCT595package package frequency 900 MHz 1.8 GHz 900 MHz 1.8 GHz 900 MHz 1.8 GHz 900 MHz 1.8 GHz Unit dB dB dBm dBm Value 17 (22) 11 (16) 1.3 1.5 19 19 28 28