ETC BGB550

NE
W
BGB550
Medium power broadband amplifier
Bias, 3
L ext
~ nH
MMIC
Features
Featuresand
andBenefits
Benefits
C, 4
--mirror
mirrorbiased
biasedRF
RFtransistor
transistor
internal circuit
--collector
collectorcurrent
currentup
uptoto350mA
350mA
--low
lowoperation
operationvoltage
voltageVVCC <<3V
3V
CC
MP:
now
RFin
--input
inputmatching
matchingimproved
improvedby
byLLext
ext
E, 2,5
B,1
Vd = 2.0V, Id = 100mA
Symbol
Parameter
IS21I2 / (GMA) Power Gain / (max. available)
NF
WS DS M 1
26.04.2002
Page 1
--high
highoutput
outputpower
power&&linearity
linearity
Noise Figure
P-1dB
Output Compression Point
OIP3
Output Third Order Intercept Point
--SCT595
SCT595package
package
frequency
900 MHz
1.8 GHz
900 MHz
1.8 GHz
900 MHz
1.8 GHz
900 MHz
1.8 GHz
Unit
dB
dB
dBm
dBm
Value
17 (22)
11 (16)
1.3
1.5
19
19
28
28