AGILENT MSA-0885

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0885
purpose 50 Ω gain block above
0.5␣ GHz and can be used as a high
gain transistor below this frequency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commercial and industrial applications.
Features
• Usable Gain to 6.0␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
22.5 dB Typical at 1.0␣ GHz
• Low Noise Figure:
3.3␣ dB Typical at 1.0␣ GHz
• Low Cost Plastic Package
Description
The MSA-0885 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
designed for use as a general
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
The use of an external bias resistor
for temperature and current
stability also allows bias flexibility.
Typical Biasing Configuration
R bias
VCC > 10 V
RFC (Optional)
4
C block
C block
3
IN
1
2
5965-9545E
OUT
MSA
Vd = 7.8 V
6-422
85 Plastic Package
MSA-0885 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum[1]
65 mA
500 mW
+13 dBm
150°C
–65°C to 150°C
Thermal Resistance[2,4]:
θjc = 130°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.7 mW/°C for TC > 85°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
GP
VSWR
Parameters and Test Conditions: Id = 36 mA, ZO = 50 Ω
Power Gain (|S21| 2)
f = 0.1 GHz
f = 1.0 GHz
Units
Min.
Typ.
21.0
32.5
22.5
dB
Input VSWR
f = 0.1 to 3.0 GHz
1.9:1
Output VSWR
f = 0.1 to 3.0 GHz
1.6:1
NF
50 Ω Noise Figure
f = 1.0 GHz
dB
3.3
P1 dB
Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
12.5
IP3
Third Order Intercept Point
f = 1.0 GHz
dBm
27.0
tD
Group Delay
f = 1.0 GHz
psec
125
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
mV/°C
6.2
7.8
Max.
9.4
–17.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
6-423
MSA-0885 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 36 mA)
S21
S11
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
.64
.58
.44
.36
.31
.27
.24
.26
.29
.34
.38
.42
.48
.60
–21
–39
–65
–82
–95
–105
–125
–147
–159
–175
172
161
135
102
32.5
31.3
28.7
26.3
24.3
22.5
19.3
16.7
14.9
13.1
11.6
10.1
7.7
5.5
42.29
36.89
27.20
20.57
16.31
13.36
9.24
6.82
5.57
4.51
3.80
3.21
2.43
1.88
160
144
120
106
96
87
71
56
48
37
25
14
–7
–29
–36.5
–32.8
–29.4
–27.2
–25.2
–24.2
–21.4
–19.7
–18.4
–17.7
–16.9
–16.3
–15.6
–14.9
.015
.023
.034
.044
.055
.061
.085
.103
.120
.130
.144
.153
.167
.179
40
50
54
53
53
51
50
47
44
42
37
33
24
17
.61
.54
.42
.33
.28
.25
.18
.15
.12
.09
.06
.04
.09
.08
–24
–45
–77
–98
–115
–129
–153
–173
180
165
172
–139
–90
–140
0.78
0.67
0.69
0.77
0.83
0.87
0.96
0.98
1.00
1.03
1.04
1.06
1.09
1.06
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C
(unless otherwise noted)
35
40
30
Gain Flat to DC
30
0.1 GHz
30
0.5 GHz
20
15
G p (dB)
25
Id (mA)
G p (dB)
25
35
TC = +85°C
TC = +25°C
TC = –25°C
20
1.0 GHz
20
2.0 GHz
15
10
10
0
0
0.1
0.3 0.5
1.0
3.0
6.0
0
2
4
8
5
10
10
4.5
12
11
4
12
4.0
I d = 36 mA
NF (dB)
P1 dB
P1 dB (dBm)
13
10
–25
0
+25
+55
+85
3.5
3.0
6
2
I d = 20 mA
I d = 36 mA
I d = 40 mA
8
NF
3
40
Figure 3. Power Gain vs. Current.
14
GP
21
30
Figure 2. Device Current vs. Voltage.
I d = 40 mA
22
20
I d (mA)
16
23
P1 dB (dBm)
Gp (dB)
Figure 1. Typical Power Gain vs.
Frequency, Id = 36 mA.
6
Vd (V)
FREQUENCY (GHz)
NF (dB)
4.0 GHz
10
5
I d = 20 mA
4
0.1
2.5
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
1.0
2.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=36mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-424
85 Plastic Package Dimensions
.020
.51
GROUND
4
0.143 ± 0.015
3.63 ± 0.38
1
RF INPUT
RF OUTPUT
AND BIAS
2
GROUND
.060 ± .010
1.52 ± .25
3
A08
45°
.085
2.15
5° TYP.
.07
0.43
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.006 ± .002
.15 ± .05
.286 ± .030
7.36 ± .76
6-425