Preliminary Release GaAs Foundry Services PROCESS LH5 LH5 V1.00 Features • Typical RF Performance 0.18 µm P-HEMT Technology for Ultra Low-Noise and Millimeter-Wave Applications MMICs up to 70 GHz 75 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging • • • • • (6X25) 150 µm FET Test Conditions Freq. Typ. Val. MSG/ VDS = 3V, IDS = .50IDMAX 12/26GHz 31/25dB Fmin VDS = 3V, IDS = .30IDMAX 12/26GHz 0.5/1.0dB Ga Associated Gain at Fmin 12/26GHz XX/YYdB ft VDS = 3V, IDS = .50IDMAX ------ 70 GHz MAG Description M/A-COM’s LH5 process utilizes MBE-grown P-HEMT technology to achieve a high performing, low cost process for ultra low-noise and millimeter-wave applications through 70 GHz. The focus is on products for moderate to high volume applications. M/A-COM offers a full compliment of foundry services to meet the requirements for developing and producing a MMIC or MMICbased product. Param. Ordering Information Part Number Description FE61-0001 LH5 Wafer SVC6310 Mask Set Electrical Specifications: TA = +25 °C Parameter Test Conditions Units Min. Typ. Max. 500 200 µm PCM FET IDS,MAX VDS = 3V, VGS = +0.6V mA/mm 250 375 DC GM VDS = 3V, IDS = IDS @ GM,MAX mS/mm 400 480 Vp VDS = 3V, IDS = 0.025IDSS V -1.0 -0.40 -0.1 BVgd IG = 0.1mA/mm V -4 -6 - RF GM VDS = 3V, IDS = 0.5IDMAX mS 90 112 125 Cgs VDS = 3V, IDS = 0.5IDMAX pF .165 .183 .205 Cgd VDS = 3V, IDS = 0.5IDMAX pF .020 .027 .033 Cds VDS = 3V, IDS = 0.5IDMAX pF .045 .050 .057 Ft VDS = 3V, IDS = 0.5IDMAX GHz 60 70 90 Sheet Resistors OCRS (N+) l = 20mA Ohms/sq 250 285 330 NCRS (Ta2N) l = 10mA Ohms/sq 40 50 60 GFRS (GATE) l = 20mA Ohms/sq - .027 .040 CMCA (1500 ANG) f = 1MHz pF/mm 370 410 450 CMIL V = 10V µA - - 0.5 MIM CAPACITORS 2 Specifications Subject to Change Without Notice. M/A-COM Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 1 ♦ Asia/Pacific: Tel. +81 3 3263-8761 Fax +81 3 3263-8769 ♦ Europe: Tel. +44 (1344) 869-595 Fax +44 (1344) 300-020 GaAs Foundry Services Process LH5 V1.00 Normalized Nominal Models Parameter 30% ID,MAX 3 VDS Mask Layer Assignments 50% IDMAX 3 VDS Mask # Function IDS mA/mm 100.0 185.0 10 gm mS/mm 470 560.0 20 Active area Cgs pF/mm 0.807 0.861 30 TaN resistor 40 Base plate Cgd pF/mm 0.137 0.145 Cds pF/mm 0.234 0.266 Td pS 0.29 0.80 Ri Ohms-mm 0.788 0.928 Gds mS/mm 37.25 37.8 Ggs mS/mm 0.0 0.0 Rg Ohms/mm 140 140 Rs Ohms-mm 0.32 0.34 Rd Ohms-mm 0.38 0.374 Cgp pF/mm 0.050 0.050 Cdp pF/mm 0.003 0.003 Lg nH/Finger EB 50 Ohmic Gate recess EB 60 Gate metal 70 Dielectric via 80 Air bridge 90 Plating 100 Front streets 110 RIE via 120 Back streets 130 Barrier NOTE: Unused layer numbers are reserved for future use. Ld nH/Finger FREQUENCY RESPONSE MINIMUM NOISE FIGURE 200 µm Low Noise P-HEMT Vds = 3V, Ids = 30 mA, Vg= +0.2 V (25µm x 6) 150 µm Low Noise P-HEMT Vds = 3V, Ids = 15 mA 1.2 Fmin = 0.22372 + 0.00262 Freq + 0.00084 Freq^2 Polynomial Fit degree=2 1.0 0.8 0.6 0.4 0.2 0.0 0 5 10 15 Freq 20 25 Specifications Subject to Change Without Notice. 2 North America: Tel. (800) 366-2266 Fax (800) 618-8883 M/A-COM Inc. ♦ Asia/Pacific: Tel. +81 3 3263-8761 Fax +81 3 3263-8769 ♦ Europe: Tel. +44 (1344) 869-595 Fax +44 (1344) 300-020 30