DC-20 GHz GaAs MMIC Amplifier Preliminary MAAPSM0015 Rev. 2.0 DC-20 GHz GaAs MMIC Amplifier Features ¢ ¢ ¢ ¢ ¢ ¢ ¢ Wide Frequency Range: DC-20 GHz On Chip Bias Network High Gain : 11 dB Gain Flatness: + 0.75 dB Typical Psat: 21 dBm Return Loss: 12 dB Low Bias Current : 100mA 2.0 mm Description The M/A-COM MAAPSM0015 is a medium power wideband AGC amplifier that typically provides 11 dB of gain with 25 dB of AGC range. The circuit topology is a six-section traveling wave amplifier using common source FETs which provide very wide bandwidth. Typical input and output return loss is 12 dB. RF ports are DC coupled, enabling the user to customize system corner frequencies. DC bias can be provided through the drain termination resistor without the need for an external bias inductor. For higher power applications, an external inductor can be used to bias the amplifier through the RFout or Vd_aux pads. Applications include OC-192 12.5 GBit/s receive AGC amplifier and lithium niobate Mach-Zehnder modulator driver amplifer. The MAAPSM0015 requires off-chip decoupling and blocking components. Each device is 100% DC and RF tested on wafer to ensure performance compliance. The device is provided in chip form. M/A-Com fabricates the MAAPSM0015 using a 0.5 µm gate length low noise multi-function self aligned gate (MSAG) MESFET process. This process features silicon nitride passivation and polimide scratch protection. The die thickness is 0.003”. 3.0 mm Primary Applications ¢ ¢ ¢ 12.5GBit OC-192 LN/MZ Driver 12.4GBit OC-192 AGC Receiver SONET/SDH Electrical Characteristics 8V, 100 mA Parameter Typ Units Bandwidth DC-20 GHz Gain 11 dB Gain Flatness + 0.75 dB Input Return Loss -12 dB Output Return Loss -12 dB Reverse Isolation >-13 dB Psat (+8V, 100 mA) 21 dBm Noise Figure 7 dB DC-20 GHz GaAs MMIC Amplifier MAAPSM0015 Preliminary DC-20GHz Carrier-Mounted Performance Vds = 8,0V, Ids = 50, 70, 100mA 0 14 -5 12 100 mA S11 (dB) S21 (dB) -10 10 70 mA 8 70 mA 100 mA -15 -20 50 mA 6 50 mA -25 -30 4 0 5 10 15 0 20 5 10 15 20 Frequency (GHz) Frequency (GHz) 0 -5 70 mA S22 (dB) -10 50 mA -15 -20 -25 100 mA -30 0 5 10 15 20 Frequency (GHz) DC-20GHz Wafer Probe Data Vds = 8,0V, Ids = 100mA Vds=8V, Id=100mA 10 25 bias through RFout 8 Noise Figure (dB) Psat (dBm) 23 21 bias through Vd 19 6 4 2 17 0 15 0 5 10 15 Frequency (GHz) 20 0 5 10 Frequency (GHz) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. COMPANY CONFIDENTIAL 15 20 DC-20 GHz GaAs MMIC Amplifier MAAPSM0015 Preliminary MAAPSM0015 Bond Pad Location All Dimensions are in mm (inches) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. COMPANY CONFIDENTIAL