PD - 91654A
IRG4BC40W
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
VCES = 600V
VCE(on) typ. = 2.05V
G
@VGE = 15V, IC = 20A
E
n-channel
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
TO-220AB
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ T C = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.5
–––
2.0 (0.07)
0.77
–––
80
–––
Units
°C/W
g (oz)
1
4/24/2000
IRG4BC40W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18
—
—
V
VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
0.44 —
V/°C VGE = 0V, IC = 1.0mA
— 2.05 2.5
IC = 20A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 2.36 —
IC = 40A
See Fig.2, 5
V
— 1.90 —
IC = 20A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
13
— mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance U
18
28
—
S
VCE = 100 V, IC =20A
—
—
250
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
—
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 2500
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
V(BR)CES
V(BR)ECS
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
98
12
36
27
22
100
74
0.11
0.23
0.34
25
23
170
124
0.85
7.5
1900
140
35
Max. Units
Conditions
147
IC =20A
18
nC
VCC = 400V
See Fig.8
54
VGE = 15V
—
—
TJ = 25°C
ns
150
IC = 20A, VCC = 480V
110
VGE = 15V, RG = 10Ω
—
Energy losses include "tail"
—
mJ
See Fig. 9,10, 14
0.45
—
TJ = 150°C,
—
IC = 20A, VCC = 480V
ns
—
VGE = 15V, RG = 10Ω
—
Energy losses include "tail"
—
mJ
See Fig. 10,11, 14
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC40W
50
For both:
40
Load Current ( A )
Tria n g u la r w a ve :
D u ty cy c le : 5 0 %
TJ = 12 5° C
T s in k = 9 0 °C
G at e d rive as sp ec ifie d
P o w e r D is s ip a tio n = 2 8 W
C la m p vo l ta g e :
8 0 % o f r a te d
30
S q u a re w ave :
6 0 % o f ra te d
v o lt a g e
20
10
Id e a l d io de s
A
0
0.1
1
10
100
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
TJ = 25 ° C
100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
100
TJ = 150 °C
10
V
= 15V
80µs PULSE WIDTH
GE
1
1.0
2.0
3.0
4.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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5.0
TJ = 150 °C
TJ = 25 °C
10
V
= 50V
5µs PULSE WIDTH
CC
1
5
7
9
11
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC40W
50
3.0
V
= 15V
80 us PULSE WIDTH
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
GE
40
30
20
10
0
25
50
75
100
125
150
IC = 40 A
2.5
IC = 20 A
2.0
IC = 10 A
1.5
1.0
-60 -40 -20
TC , Case Temperature ( °C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.01
0.00001
0.10
P DM
0.05
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC40W
C, Capacitance (pF)
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
3000
Cies
2000
C
oes
1000
Cres
20
VGE , Gate-to-Emitter Voltage (V)
4000
0
1
10
12
8
4
0
100
0
20
40
60
80
100
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
V CC = 480V
V GE = 15V
0.9 TJ = 25 °C
I C = 20A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC = 400V
I C = 20A
16
VCE , Collector-to-Emitter Voltage (V)
1.0
0.8
0.7
0.6
0.5
Ω
RG = 10
10Ohm
VGE = 15V
VCC = 480V
IC = 40 A
IC = 20 A
1
IC = 10 A
0.4
0.3
10
20
30
40
50
RG , Gate Resistance (Ω)
(Ohm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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60
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC40W
1.5
RG
TJ
VCC
VGE
1000
Ω
=10
10Ohm
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
2.0
1.0
VGE = 20V
T J = 125 oC
100
0.5
SAFE OPERATING AREA
0.0
5
15
25
35
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
45
10
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC40W
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
480V
4 X I C@25°C
480µF
960V
Q
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 480V
R
S
Q
R
90 %
10 %
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
1 0%
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
Eon
E o ff
E ts = (E o n +E o ff )
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7
IRG4BC40W
Case Outline and Dimensions — TO-220AB
2.8 7 (.1 1 3 )
2.6 2 (.1 0 3 )
1 0 .5 4 (.4 1 5 )
1 0 .2 9 (.4 0 5 )
4
3.78 (.149)
3.54 (.139)
-A -
1.15 (.0 45)
M IN
1
2
3
3X
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 )
2 .5 4 (.1 0 0 )
1.32 (.05 2)
1.22 (.04 8)
6 .4 7 (.255)
6 .1 0 (.240)
1 5 .2 4 (.6 0 0 )
1 4 .8 4 (.5 8 4 )
1 .4 0 (.0 5 5 )
3 X 1 .1 5 (.0 4 5 )
-B -
4.69 (.185)
4.20 (.165)
3.96 (.1 60)
3.55 (.1 40)
4.06 (.160)
3.55 (.140)
3X
0.93 (.037)
0.69 (.027)
0 .3 6 (.0 1 4 )
M B A M
3X
0.55 (.0 22)
0.46 (.0 18)
2.92 (.115 )
2.64 (.104 )
2X
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Data and specifications subject to change without notice. 10/00
8
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