CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC237/238/239 TRANSISTOR (NPN) TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCEO VEBO Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage Emitter-Base Voltage BC237 BC238/239 6 5 Units V V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 350 mW 357 ℃/W RθJA Thermal Resistance, Junction to Ambient RθJC Thermal Resistance, Junction to Case 125 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Test conditions IC=100μA, IE=0 IC=2mA, IB=0 IE=100μA, IC=0 BC238/239 30 BC237 45 BC238/239 25 BC237 6 BC238/239 5 VCB=30V,IE=0 BC238/239 TYP V V BC237C/238C/239C 270 120 800 BC239 120 800 BC237A 120 220 BC237B/238B 200 460 BC237C/238C/239C 380 800 hFE(2) BC237A 120 BC237B/238B 180 BC237C/238C/239C 300 hFE(3) IC=10mA, IB=0.5mA BC237/238/239 0.2 IC=100mA, IB=5mA 0.6 BC237/239 BC238 VBE(sat) Transition frequency VBE fT IC=10mA,IB=0.5mA 0.83 IC=100mA,IB=5mA 1.05 0.7 0.55 VCE=5V, IC=100mA 0.83 VCE=3V,IC=0.5mA,f=100MHz BC237 100 BC238 120 BC239 140 150 200 BC238 150 240 BC239 150 280 VCE=5V,IC=10mA,f=100MHz BC237 Cob VCB=10V, IE=0, f=1MHz Emitter-base capacitance Cib VEB=0.5V, IC=0, f=1MHz V 0.5 VCE=5V, IC=2mA Collector output capacitance V 0.8 VCE=5V, IC=0.1mA Base-emitter voltage nA 90 150 BC237 UNIT V BC237B/238B VCE=5V, IC=100mA Base-emitter saturation voltage MAX 15 BC237A VCE=5V, IC=2mA VCE(sat) 50 BC237 hFE(1) Collector-emitter saturation voltage BC237 VCE=50V, VBE=0 VCE=5V, IC=10μA DC current gain MIN V MHz 4.5 8 pF Pf VCE=5V, Ic=0.2mA, 2 4 f=1kHZ, Rs=2KΩ, Δf=200Hz BC237 2 10 BC238 2 10 BC239 2 4 f=1kHZ, Rs=2KΩ Noise figure NF BC239 VCE=5V, Ic=0.2mA, dB Typical Characteristics