TO-92 Plastic-Encapsulate Transistors A42

TIGER ELECTRONIC CO.,LTD
TO-92
A42
Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
TO-92
FEATURES
High voltage
1. EMITTER
2. BASE
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
500
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
RӨJA
Thermal Resistance, junction to Ambient
200
℃/mW
RӨJC
Thermal Resistance, unction to Case
83.3
℃/mW
3. COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100uA, IE=0
300
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
300
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=200V, IE=0
0.25
μA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
μA
hFE(1)
VCE=10V, IC=1mA
60
hFE(2)
VCE=10V, IC=10mA
80
hFE(3)
VCE=10V, IC=30mA
75
Collector-emitter saturation voltage
VCE(sat)
IC=20mA, IB=2mA
0.2
V
Base-emitter saturation voltage
VBE(sat)
IC=20mA, IB=2mA
0.9
V
DC current gain
fT
Transition frequency
VCE=20V, IC=10mA,f=30MHZ
250
50
MHz
CLASSIFICATION OF hFE(2)
Rank
Range
A
B1
B2
C
80-100
100-150
150-200
200-250
Typical Characteristics
A42