ETC A733

CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD
TO-92
Plastic-Encapsulate Transistors
www.harom.cn
A733
TRANSISTOR (PNP)
TO-92
1. EMITTER
FEATURE
Power dissipation
2. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
3. BASE
Value
Units
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-100
mA
PC
Collector Power Dissipation
250
mW
TJ
Junction Temperature
150
℃
Tstg
Junction and Storage Temperature
-55-150
℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= -50uA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA , IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -50uA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -60V, IE=0
-0.1
uA
Emitter cut-off current
IEBO
VEB= -5 V, IC=0
-0.1
uA
DC current gain
hFE
VCE= -6V, IC= -1mA
Collector-emitter saturation voltage
VCE(sat)
90
IC= -100mA, IB=- 10mA
Base-emitter voltage
VBE
VCE=-6V,IC=-1.0mA
-0.58
Transition frequency
fT
VCE=-6V,IC=-10mA
100
Collector output capacitance
Cob
Noise figure
NF
VCB=-10V,IE=0,f=1MHZ
VCE=-6V,IC=-0.3mA,
Rg=10kΩ,f=100HZ
200
600
-0.18
-0.3
V
-0.62
-0.68
V
MHz
6
pF
20
dB
CLASSIFICATION OF hFE
Rank
Range
R
Q
P
K
90-180
135-270
200-400
300-600
Typical Characteristics
A733