Renesas LSIs M6MGB/T64BM34CWG 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM & Stacked-CSP ( Chip Scale Package) Description The M6MGB/T64BM34CWG is a Stacked Chip Scale The M6MGB/T64BM34CWG is suitable for a high Package (S-CSP) that contents 64M-bit Flash memory and performance cellular phone and a mobile PC that are 32M-bit Mobile RAM in a 67-pin Stacked CSP for lead free use. required to be small mounting area, weight and small power dissipation. 64M-bit Flash memory is a 4,194,304 words, single power supply and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR IV (Divided bit-line NOR IV) architecture for the memory cell. All memory blocks are locked and can not be programmed or erased, when F-WP# is Low. Using Software Lock Release function, program or erase operation can be executed. Features Supply Voltage F-VCC=M-VCC=2.7 ~ 3.0V 32M-bit Mobile RAM is a 2,097,152 words high density RAM fabricated by CMOS technology for the peripheral circuit and DRAM cell for the memory array. The interface is compatible to an asynchronous SRAM. Ambient Temperature Ta=-40 ~ 85 degree Package 67pin S-CSP Access Time Flash 70ns (Max.) Mobile RAM 80ns (Max.) Ball pitch 0.80mm The cells are automatically refreshed and the refresh control is not required for system. The device also has the partial block refresh scheme and the power down mode by writing the command. Outer-ball:Su-Ag-Cu Application Mobile communication products PIN CONFIGURATION (TOP VIEW) INDEX(Laser Marking) 1 3 4 5 6 7 8 NC NC A NC NC B FWP# MGND FWE# A16 A20 C FRP# FRY/BY# A8 A11 D A10 A15 E A9 A14 F DQ13 DQ15 A13 G DQ6 MWE# A12 H DQ4 DQ14 FGND J DQ5 DQ7 NC K NC L NC M A18 MLB# A5 A17 MUB# NC A4 A7 MOE# A19 A0 A6 NC 10.8 mm 2 FCE# FGND FOE# NC A3 A21 DQ11 DQ9 DQ12 A2 DQ8 DQ10 NC A1 DQ0 DQ2 MVCC MCE# DQ1 DQ3 FVCC NC NC (Top View) 8.5 mm F-VCC :VCC for Flash Memory M-VCC :VCC for Mobile RAM F-GND :GND for Flash Memory M-GND :GND for Mobile RAM A0-A20 :Common address for Flash/Mobile RAM A21 :address for Flash DQ0-DQ15 :Data I/O F-CE# :Flash chip enable M-CE# :Mobile RAM chip enable 1 F-RY/BY# F-OE# M-OE# F-WE# M-WE# F-WP# F-RP# M-LB# M-UB# : Flash Memory Ready /Busy :Output enable for Flash Memory :Output enable for Mobile RAM :Write enable for Flash Memory :Write enable for Mobile RAM :Write protect for Flash :Reset power down for Flash :Lower byte control for Mobile RAM :Upper byte control for Mobile RAM NC : Non Connection Rev.1.1.48a_bezc Renesas LSIs M6MGB/T64BM34CWG 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM & Stacked-CSP ( Chip Scale Package) MCP Block Diagram F-Vcc F-GND A0 to A21 F-RY/BY# A0 to A21 F-CE# F-WP# F-RP# F-WE# F-OE# 64Mbit DINOR IV Flash Memory M-Vcc M-GND DQ0 to DQ15 A0 to A20 M-WE# M-OE# M-UB# M-LB# M-CE# 32Mbit Mobile RAM Note: In the data sheet there are “VCC”s , “GND”s , “OE”s and “WE”s. In the Flash Memory part they mean F-Vcc, F-GND, F-OE# and F-WE#. In the Mobile RAM part they mean M-Vcc, M-GND, M-OE# and M-WE#. In the Mobile RAM part UB# and LB# are M-UB# and M-LB#, respectively. Capacitance Symbol Parameter Conditions Input A21-A0, F-OE#, F-WE#, F-CE#, F-WP#, Fcapacitance RP#, M-CE#, M-OE#, M-WE#, M-LB#, M-UB# Ta=25°C, f=1MHz, Vin=Vout=0V Output COUT DQ15-DQ0, F-RY/BY# Capacitance CIN 2 Min. Limits Typ. Max. Unit 18 pF 22 pF Rev.1.1.48a_bezc Renesas LSIs M6MGB/T64BM34CWG 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS FLASH MEMORY 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM & Stacked-CSP ( Chip Scale Package) Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan Keep safety first in your circuit designs! • Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. 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Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. • The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. • If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. • Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. • Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 47 REJ03C0035 © 2003 Renesas Technology Corp. New publication, effective April 2003. Specifications subject to change without notice Rev.1.1.48a_bezc This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.