HZN6.8ZMFA Silicon Planar Zener Diode for Surge Absorb REJ03G0032-0100Z (Previous: ADE-208-1456) Rev.1.00 May.08. 2003 Features • HZN6.8ZMFA has four devices in a monolithic, and can absorb surge. • VSON-5T Package is suitable for high density surface mounting. Ordering Information Type No. Laser Mark Package Code HZN6.8ZMFA 68∗(∗ : Let to Month Code) VSON-5T Pin Arrangement 1 2 5 4 3 (Top View) Rev.1.00, May.08.2003, page 1 of 6 1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Cathode HZN6.8ZMFA Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Value Unit Power dissipation Pd * 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Four device total, See Fig.2. Electrical Characteristics *1 (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Zener voltage VZ 6.47 — 7.00 V IZ = 5 mA, 40 ms pulse Reverse current IR — — 0.5 µA VR = 3.5 V Capacitance C — — 25 pF VR = 0 V, f = 1 MHz rd — — 30 Ω IZ = 5 mA — 25 — — kV C = 150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Dynamic resistance 2 3 ESD-Capability * * Notes: 1. Per one device. 2. Failure criterion ; IR > 0.5 µA at VR = 3.5 V. 3. Between cathode and anode. Month Code Month of Manufacture Month Code Month of Manufacture Month Code January A July G February B August H March C September J April D October K May E November L June F December M Rev.1.00, May.08.2003, page 2 of 6 HZN6.8ZMFA Main Characteristic 10-2 250 20h × 15w × 0.8t Unit: mm 10-4 10-5 10-6 0 2 4 6 8 Zener Voltage VZ (V) 1.0 150 With polyimide board 100 50 0 50 100 150 200 Ambient Temperature Ta (˚C) Fig.2 Power Dissipation vs. Ambient Temperature 104 PRSM t Ta = 25°C nonrepetitive 103 102 10 1.0 10–5 10–4 10–3 Time t (s) 10–2 Fig.3 Surge Reverse Power Ratings Rev.1.00, May.08.2003, page 3 of 6 1.75 1.5 0 10 Fig.1 Zener current vs. Zener voltage Nonrepetitive Surge Reverses Power PRSM (W) 3.0 3.8 10-3 2.45 Power Dissipation Pd (mW) Zener Current IZ (A) 0.3 200 10–1 1.0 HZN6.8ZMFA Main Characteristic (cont.) Transient Thermal Impedance Zth (°C/W) 104 103 102 10 1.0 10–2 10–1 1.0 Time t (s) 10 Fig.4 Transient Thermal Impedance Rev.1.00, May.08.2003, page 4 of 6 102 103 HZN6.8ZMFA Package Dimensions As of January, 2003 1.6 ± 0.05 (0.1) 0.2 0.5 +0.1 0.12 –0.05 1.0 ± 0.1 0.5 Max 0.5 (0.1) 1.2 ± 0.1 0.2 1.6 ± 0.05 Unit: mm +0.1 5 – 0.2 –0.05 Package Code JEDEC JEITA Mass (reference value) Rev.1.00, May.08.2003, page 5 of 6 VSON-5T — — 0.002 g HZN6.8ZMFA Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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