JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 本资料由东莞长电代理：FUYAT CO.，LTD提供0769-85388861 SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR (NPN) 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 μA Collector cut-off current ICEO VCE=35V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 3V , 0.1 μA DC current gain hFE VCE=5V, IC= 1mA IC=0 200 1000 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA 1 V fT VCE=5V, IC= 10mA f=30MHz Transition frequency CLASSIFICATION OF hFE Rank Range 150 MHz L H 200-450 450-1000 PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn Typical Characteristics PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn S9014