SOT-223 Plastic-Encapsulate Transistors D882

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
D882
TRANSISTOR（NPN）
SOT-223
FEATURES
Power Dissipation:1.5W
Low Collector-emitter Saturation Voltage
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
3
A
PC
Collector Dissipation
1.5
W
TJ, Tstg
Junction and Storage Temperature
℃
-55~+150
ELECTRICAL CHARACTERISTICS（Ta=25℃ unless otherwise specified）
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=100μA ，IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10 mA , IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 μA，IC=0
6
V
Collector cut-off current
ICBO
VCB= 40 V, IE=0
1
μA
Collector cut-off current
ICEO
VCE=30 V, IB=0
10
μA
Emitter cut-off current
IEBO
VEB=6V,
1
μA
hFE（1）
VCE= 2V, IC= 1A
60
hFE（2）
VCE=2V, IC= 100mA
32
Collector-emitter saturation voltage
VCE(sat)
IC=2A,
IB= 0.2A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=2A,
IB= 0.2A
1.5
V
DC current gain
Transition frequency
IC=0
VCE= 5V,
fT
IC=0.1A
400
50
f = 10MHz
MHz
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
A,Jul,2012