SOT-223 Plastic-Encapsulate Transistors B772

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
B772
SOT-223
TRANSISTOR（PNP）
FEATURES
Power Dissipation:1.25W
Low Collector-emitter Saturation Voltage
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS(Ta=25 ℃ unless otherwise not)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-3
A
PC
Collector Dissipation
1.25
W
TJ, Tstg
Junction and Storage Temperature
℃
-55~+150
ELECTRICAL CHARACTERISTICS（Ta=25℃　unless otherwise specified）
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=-100μA ，IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10 mA , IB=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100 μA，IC=0
-6
V
Collector cut-off current
ICBO
VCB= -40 V , IE=0
-1
μA
Collector cut-off current
ICEO
VCE=-30 V , IB=0
-10
μA
Emitter cut-off current
IEBO
VEB=-6V ,
-1
μA
hFE（1）
VCE= -2V, IC= -1A
60
hFE（2）
VCE=-2V, IC= -100mA
32
Collector-emitter saturation voltage
VCE(sat)
IC=-2A,
IB= -0.2A
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-2A,
IB= -0.2A
-1.5
V
DC current gain
Transition frequency
VCE= -5V,
fT
IC=0
IC=-0.1A
400
50
f = 10MHz
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
R
O
Y
GR
60-120
100-200
160-320
200-400
A,Jul,2012