ETC SGM44599

SGM44599
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
GENERAL DESCRIPTION
FEATURES
The SGM44599 is a high-speed, low-voltage, advanced
●
Low Voltage Operation: 1.8V to 5.5V
dual-independent
(DPDT)
●
On-Resistance: 4Ω (TYP)
CMOS analog switch that is designed to operate from a
●
Low On-Resistance Flatness
single +1.8V to +5.5V power supply. It features high-
●
-3dB Bandwidth: 300MHz
bandwidth (300MHz) and low on-resistance (4Ω TYP).
●
Rail-to-Rail Input and Output Operation
●
High Off-Isolation: -75dB at 1MHz
The SGM44599 is configured as a dual double-pole
●
Low Crosstalk: -100dB at 1MHz
/double-throw (DPDT) device with two logic control
●
Typical Power Consumption (<0.01µW)
inputs that control two multiplexer/demultiplexer each.
●
TTL/CMOS Compatible
The configuration can also be used as a dual differential
●
Available in Green TQFN-3×3-16L and
double-pole/double-throw
2-to-1 multiplexer/ demultiplexer.
TQFN-2.5×2.5-16L Packages
●
SGM44599 is available in Green TQFN-3×3-16L and
Extended Industrial Temperature Range:
-40°C to +85°C
TQFN-2.5×2.5-16L packages.
BLOCK DIAGRAM
APPLICATIONS
Communication Systems
Cell Phones
Portable Instrumentation
COM1
NO1
IN1-IN2
COM2
COM3
PCMCIA Cards
Computer Peripherals
Modems
NC3
NO3
IN3-IN4
COM4
PDAs
NC2
NO2
Audio Signal Routing
Audio and Video Switching
NC1
NC4
NO4
SG Micro Limited
www.sg-micro.com
REV. A. 3
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
SGM44599
PACKAGE/ORDERING INFORMATION
MODEL
SGM44599
TQFN-3×3-16L
SPECIFIED
TEMPERATURE
RANGE
-40°C to +85°C
SGM44599YTQ16/TR
44599
Tape and Reel, 3000
TQFN-2.5×2.5-16L
-40°C to +85°C
SGM44599YTQB16/TR
44599
Tape and Reel, 3000
PINPACKAGE
ORDERING
NUMBER
PACKAGE
MARKING
PACKAGE
OPTION
ABSOLUTE MAXIMUM RATINGS
CAUTION
V+ to GND.................................................................-0.3V to 6V
Analog, Digital voltage range….................. -0.3V to (V+) + 0.3V
Continuous Current NO, NC, or COM ...........................±100mA
Operating Temperature Range............................-40°C to +85°C
Junction Temperature.......................................................150°C
Storage Temperature....................................... -65°C to +150°C
Lead Temperature (soldering, 10s)...................................260°C
ESD Susceptibility
HBM..................................................................................2000V
MM......................................................................................200V
This integrated circuit can be damaged by ESD if you don’t pay
attention to ESD protection. SGMICRO recommends that all
integrated circuits be handled with appropriate precautions.
Failure to observe proper handling and installation procedures
can cause damage. ESD damage can range from subtle
performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage because
very small parametric changes could cause the device not to
meet its published specifications.
NOTE:
Stresses beyond those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only, and functional operation of the device at
these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
SG Micro Limited
www.sg-micro.com
SGMICRO reserves the right to make any change in circuit
design, specification or other related things if necessary without
notice at any time. Please contact SGMICRO sales office to get
the last datasheet.
２
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
SGM44599
PIN CONFIGURATIONS (TOP VIEW)
COM1 NO1
16
15
V+
NC4
14
13
NC1 1
IN1-IN2
12 COM4
2
11
GND
NO4
10 IN3-IN4
NO2 3
COM2 4
9
6
5
NC2
7
NC3
8
GND NO3 COM3
TQFN-3×3-16L
TQFN-2.5×2.5-16L
PIN DESCRIPTION
V+
GND
PIN
TQFN-3×3-16L
TQFN-2.5×2.5-16L
14
6
INX
2, 10
COMX
NOX
NCX
16, 4, 8, 12
15, 3, 7, 11
1, 5, 9, 13
NAME
FUNCTION
Power supply
Ground
Digital control pin to connect the COM
terminal to the NO or NC terminals
Common terminal
Normally-open terminal
Normally-closed terminal
NOTE: NOX, NCX and COMX terminals may be an input or output.
FUNCTION TABLE
IN1-IN2
FUNCTION
NC1 and NC2
NO1 and NO2
0
ON
OFF
1
OFF
ON
IN3-IN4
FUNCTION
NC3 and NC4
NO3 and NO4
0
ON
OFF
1
OFF
ON
SG Micro Limited
www.sg-micro.com
3
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
SGM44599
ELECTRICAL CHARACTERISTICS
(V+ = +4.5V to +5.5V, GND = 0V, VIH = +1.6V, VIL = +0.5V, TA = -40°C to +85°C. Typical values are at V+ = +5.0V, TA = +25°C, unless
otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
TEMP
MIN
-40°C to +85°C
0
TYP
MAX UNITS
ANALOG SWITCH
Analog Signal Range
VNO, VNC, VCOM
On-Resistance
RON
On-Resistance Match
Between Channels
∆RON
On-Resistance Flatness
RFLAT(ON)
V+ = 4.5V, 0V ≤ VNO or VNC ≤ V+,
ICOM = -100mA, Test Circuit 1
V+ = 4.5V, 0V ≤ VNO or VNC ≤ V+,
ICOM = -100mA, Test Circuit 1
V+ = 4.5V, 0V ≤ VNO or VNC ≤ V+,
ICOM = -100mA, Test Circuit 1
+25°C
4
-40°C to +85°C
+25°C
0.4
-40°C to +85°C
+25°C
2
-40°C to +85°C
V+
V
6.2
Ω
7.2
Ω
2.6
Ω
3.1
Ω
3.1
Ω
3.6
Ω
Source OFF Leakage Current
INC(OFF), INO(OFF)
V+ = 5.5V, VNO or VNC = 3.3V/ 0.3V,
-40°C to +85°C
VCOM = 0.3V/ 3.3V
1
µA
Channel ON Leakage Current
INC(ON), INO(ON),
ICOM(ON)
V+ = 5.5V, VCOM = 0.3V/ 3.3V,
-40°C to +85°C
VNO or VNC = 0.3V/ 3.3V, or floating
1
µA
DIGITAL INPUTS
Input High Voltage
VINH
Input Low Voltage
VINL
Input Leakage Current
-40°C to +85°C
IIN
V+ = 5.5V, VIN = 0V or 5.5V
Turn-On Time
tON
Turn-Off Time
tOFF
VNC or VNO = 3.0V, RL = 300Ω,
CL = 35pF, Test Circuit2
1.6
V
-40°C to +85°C
0.5
V
-40°C to +85°C
1
µA
DYNAMIC CHARACTERISTICS
+25°C
31.5
ns
+25°C
30.0
ns
Break-Before-Make Time Delay
tD
VNC or VNO = 3.0V, RL = 300Ω,
CL = 35pF, Test Circuit4
+25°C
11.5
ns
Charge Injection
Q
VG = GND, RG = 0Ω, CL = 1.0nF,
Q = CL x VOUT, Test Circuit3
+25°C
3.5
pC
Off Isolation
OISO
Signal = 0dBm, RL = 50Ω, 1MHz
Test Circuit5
10MHz
Channel-to-Channel Crosstalk
XTALK
Signal = 0dBm,RL = 50Ω, 1MHz
Test Circuit6
10MHz
-3dB Bandwidth
Channel ON Capacitance
BW
Signal = 0dBm, RL = 50Ω,
Test Circuit7
CNC(ON), CNO(ON),
CCOM(ON)
+25°C
-75
+25°C
-55
+25°C
-100
+25°C
-60
+25°C
300
MHz
+25°C
43.2
pF
dB
dB
POWER REQUIREMENTS
Power Supply Range
V+
Power Supply Current
I+
SG Micro Limited
www.sg-micro.com
-40°C to +85°C
V+ = 5.5V, VIN = 0V or V+
-40°C to +85°C
1.8
5.5
V
1
µA
4
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
SGM44599
ELECTRICAL CHARACTERISTICS
(V+ = +2.7V to +3.6V, VIH = +1.6V, VIL = +0.4V, TA = -40°C to +85°C. Typical values are at V+ = +3.0V, TA = +25°C, unless otherwise
noted.)
PARAMETER
SYMBOL
CONDITIONS
TEMP
MIN
-40°C to +85°C
0
TYP
MAX UNITS
ANALOG SWITCH
Analog Signal Range
VNO, VNC, VCOM
On-Resistance
RON
On-Resistance Match
Between Channels
∆RON
On-Resistance Flatness
RFLAT(ON)
V+ = 2.7V, 0V ≤ VNO or VNC ≤ V+,
ICOM = -100mA, Test Circuit 1
V+ = 2.7V, 0V ≤ VNO or VNC ≤ V+,
ICOM = -100mA, Test Circuit 1
V+ = 2.7V, 0V ≤ VNO or VNC ≤ V+,
ICOM = -100mA, Test Circuit 1
+25°C
10
-40°C to +85°C
V+
V
15
Ω
18
Ω
1
3
Ω
4
Ω
6
9
Ω
-40°C to +85°C
12
Ω
+25°C
-40°C to +85°C
+25°C
Source OFF Leakage Current
INC(OFF), INO(OFF)
V+ = 3.6V, VNO or VNC = 3.3V / 0.3V,
VCOM = 0.3V/ 3.3V
-40°C to +85°C
1
µA
Channel ON Leakage Current
INC(ON), INO(ON),
ICOM(ON)
V+ = 3.6V, VCOM = 0.3V/ 3.3V,
VNO or VNC = 0.3V/ 3.3V, or floating
-40°C to +85°C
1
µA
DIGITAL INPUTS
Input High Voltage
VINH
Input Low Voltage
VINL
Input Leakage Current
-40°C to +85°C
IIN
V+ = 2.7V, VIN = 0V or 2.7V
Turn-On Time
tON
Turn-Off Time
tOFF
VNC or VNO = 1.5V, RL = 300Ω,
CL = 35pF, Test Circuit2
1.5
V
-40°C to +85°C
0.4
V
-40°C to +85°C
1
µA
DYNAMIC CHARACTERISTICS
Break-Before-Make
Time Delay
Charge Injection
+25°C
38.0
ns
+25°C
44.0
ns
tD
VNC or VNO = 1.5V, RL = 300Ω,
CL = 35pF, Test Circuit4
+25°C
5.8
ns
Q
VG = GND, RG = 0Ω, CL = 1.0nF,
Q = CL x VOUT, Test Circuit3
+25°C
2.6
pC
Off Isolation
OISO
Signal = 0dBm, RL = 50Ω, 1MHz
Test Circuit5
10MHz
+25°C
-75
dB
+25°C
-55
dB
Channel-to-Channel Crosstalk
XTALK
Signal = 0dBm, RL = 50Ω, 1MHz
Test Circuit6
10MHz
+25°C
-100
dB
+25°C
-60
dB
+25°C
300
MHz
+25°C
43.2
pF
-3dB Bandwidth
Channel ON Capacitance
BW
CNC(ON), CNO(ON),
CCOM(ON)
SG Micro Limited
www.sg-micro.com
Signal = 0dBm, RL = 50Ω,
Test Circuit7
5
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
SGM44599
TYPICAL PERFORMANCE CHARACTERISTICS
On Response vs. Frequency
On Response vs. Frequency
3
3
TA = +25℃
0
On Response (dB)
On Response (dB)
V+ = +4.2V
-3
-6
V+ = +3V
TA = +25℃
0
-3
-6
-9
-9
0.1
1
10
100
0.1
1000
1
0
0
-20
-40
OFF-ISOLATION
-80
CROSSTALK
-100
V+ = +4.2V
T A = +25℃
-120
-140
0.01
0.1
1
10
Frequency (MHz)
SG Micro Limited
www.sg-micro.com
100
1000
Response vs. Frequency
20
On Response (dB)
On Response (dB)
Response vs. Frequency
20
-60
10
Frequency (MHz)
Frequency (MHz)
100
-20
-40
-60
OFF-ISOLATION
CROSSTALK
-80
-100
V+ = +3V
TA = +25℃
-120
1000
-140
0.01
0.1
1
10
Frequency (MHz)
100
1000
6
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
SGM44599
TEST CIRCUITS
100mA
V1
NO or NC
COM
VNO or VNC
RON = V1/100mA
Test Circuit 1. On Resistance
V+
0.1μF
V+
NO or NC
VIN
COM
VNO or VNC
50%
VOUT
RL
300Ω
IN
50%
CL
35pF
90%
VOUT
GND
90%
tOFF
tON
Test Circuit 2. Switching Times (tON, tOFF )
V+
0.1μF
V+
RG
NO or NC
COM
VG
VOUT
CL
1nF
IN
ΔVOUT
VOUT
VIN
ON
V+
ON
OFF
GND
0V
Q = CL × ΔVOUT
VIN
Test Circuit 3. Charge Injection
SG Micro Limited
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7
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
SGM44599
TEST CIRCUITS (Cont.)
V+
0.1μF
NC
V+
COM
NO
VNO or VNC
VIN
VOUT
RL
300Ω
IN
CL
35pF
50%
0
VNO or VNC
GND
90%
VOUT
tD
Test Circuit 4. Break-Before-Make Time Delay (tD)
V+
0.1μF
V+
NC
NO
VOUT
COM
RL
50Ω
Source
Signal
RL
50Ω
CL
5pF
IN
GND
Test Circuit 5. Off Isolation
V+
0.1μF
V+
NO or NC
COM
RL
50Ω
Source
Signal
NO or NC
N.C.
CL
5pF
COM
VOUT
RL
50Ω
CL
5pF
IN1-IN2
GND
Channel To Channel Crosstalk = -20×log
VNO or VNC
VOUT
Test Circuit 6. Channel-to-Channel Crosstalk
SG Micro Limited
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8
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
SGM44599
TEST CIRCUITS (Cont.)
V+
10nF
V+
NO or NC
Source
Signal
COM
VOUT
RL
50Ω
IN
CL
5pF
GND
Test Circuit 7. -3dB Bandwidth
SG Micro Limited
www.sg-micro.com
9
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
SGM44599
PACKAGE OUTLINE DIMENSIONS
TQFN-3×3-16L
D
e
N16
L
N1
D1
E
E1
k
b
N5
BOTTOM VIEW
TOP VIEW
A
A1
A2
SIDE VIEW
Symbol
Dimensions
In Millimeters
MIN
MAX
Dimensions
In Inches
MIN
MAX
A
0.700
0.800
0.028
0.031
A1
0.000
0.050
0.000
0.002
A2
0.203 REF
0.008 REF
D
2.900
3.100
0.114
0.122
D1
1.600
1.800
0.063
0.071
E
2.900
3.100
0.114
0.122
E1
1.600
1.800
0.063
0.071
0.300
0.007
k
b
0.200 MIN
0.180
e
L
SG Micro Limited
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0.008 MIN
0.500 TYP
0.300
0.012
0.020 TYP
0.500
0.012
0.020
10
4Ω, High Speed, Low Voltage
Dual, DPDT Analog Switch
SGM44599
PACKAGE OUTLINE DIMENSIONS
TQFN-2.5×2.5-16L
0.400 Bsc.
N13
PIN #1
IDENTIFICATION
N16
N9
1.400 ± 0.050
N1
0.350 ± 0.050
2.500 ± 0.050
2.500 ± 0.050
PIN #1 DOT
BY MARKING
1.400 ± 0.050
N5
0.200 ± 0.050
0.203 Ref.
Bottom View
0.000 ~ 0.050
0.750 ± 0.050
Top View
Side View
NOTE: All linear dimensions are in millimeters.
SG Micro Limited
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11