ULTRAFAST KIA FAST RECOVERY DIODE 8.0A，650V 销售联系：13641469108廖先生 QQ:543158798 08TB70B SEMICONDUCTORS 1.Description This series are state−of−the−art devices designed for use in switching power supplies, inverters and as free wheeling diodes. 2. Features Ultrafast 25 nanosecond recovery time 175°C operating junction temperature Popular TO−220 package Epoxy meets UL 94 V−0 @ 0.125 in Low forward voltage Low leakage current Reverse voltage to 650 V Pb−free packages are available 3. Mechanical Characteristics Case: epoxy, molded Weight: 1.9 grams (approximately) Finish: all external surfaces corrosion resistant and terminal Leads are readily solderable Lead temperature for soldering purposes: 260°C max for 10 seconds 4. Pin configuration 1 of 2 Pin(TO-220) 1 3 Function Cathode Anode Pin(TO-263) 1 2 3 Function Cathode Cathode Anode KIA FAST RECOVERY DIODE 8.0A，650V 08TB70B SEMICONDUCTORS 5. Maximum ratings Symbol VRRM VRWM VR Rating Units 650 V IF(AV) 8.0 A Peak repetitive forward current (Rated VR, square wave, 20 kHz), TC = 150°C IFM 16 A Non-repetitive peak surge current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 100 A TJ,Tstg -65 to +175 ºC Parameter Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Average rectified forward current Total device, (Rated VR), TC = 150°C Operating junction temperature and storage temperature range 6. Thermal characteristics Parameter Maximum thermal resistance, junction−to−case Symbol Rating Unit RθJC 2.0 ºC/W 7. Electrical characteristics Parameter Symbol Conditions Rating Unit Maximum Instantaneous Forward Voltage (Note 1) VF IF=8.0A, TC=25°C 2.6 V Maximum Instantaneous Reverse Current (Note 1) IR Maximum Reverse Recovery Time trr Note:1. Pulse test: pulse width=5ms, Duty cycle ≤2.0%. 销售联系：13641469108廖先生 QQ:543158798 2 of 2 TJ=150°C 500 TJ=25°C 25 VR=600V μA IF=1.0A, di/dt=50A/μs 25 IF=0.5A,IR=1.0A,IREC=0.25A 35 ns