KIA 75NF75 SEMICONDUCTORS 代理销售电话： 13641469108廖先生 QQ:543158798 1.Absolute maximum ratings o Table1: Maximum ratings(TA=25 C) Parameter Symbol Rating Unit Drain-to-source breakdown voltage VDSX 75 V Continuous drain current ID 75 A Gate-to-source voltage VGS +20 V Pulsed drain current IDM 300 A Power dissipation (TC=25 oC) Pt 0t 300 Max operating junction temperature TJ Storage temperature Tat g W o 150 o -55 to 150 C C 2.Package information Table2: Package information 4.50+0.20 3.60+0.10 6.75+0.20 1.30+0.10 9.20+0.20 13.08+0.25 0.80+0.10 2.40+0.20 2.54+0.20 G 9396 850 1656 0.50+0.10 D S KIA semiconductors All right reserved 1 of 2 KIA 75NF75 SEMICONDUCTORS 3.Electrical characteristics Table3: Electrical characteristics(TA=25 oC) Parameter Drain-to-source breakdown voltage Symbol BVDSS Condition Min VGS=0V, ID=250uA 75 Typ Max Unit V VDS=75V, VGS=0V,TJ=25 oC 1 uA 10 uA VGS=+20V +100 nA RDS(ON) VGS=10V, I D=43A 0.013 ohm VGS(TH) VDS=VGS,ID=250uA 4.0 V gFS VDS=15V, I D=35.7A 17 S Input capacitance Ciss VGS=0V, VDS=25V,f=1MHz 3900 pF Output capacitance Coss VGS=0V, VDS=25V,f=1MHz 660 pF Feedback capacitance Crss VGS=0V, VDS=25V,f=1MHz 210 pF Total gate charge Qg VDD=10V, I D=75A,VGS=60V 110 nC Gate-source charge Qgs VDD=10V, I D=75A,VGS=60V 24 nC Gate drain(meiler) charge Qgd VDD=10V, I D=75A,VGS=60V 42 nC 27 ns 100 ns 75 ns 25 ns Zero gate voltage drain current IDSS VDS=75V, VGS=0V,TJ=125 C Gate-to-source leakage current IGSS o ON/OFF STATES Static drain-to-source on-resistance Gate threshold voltage Forward transconductance 2.0 tp<=380us, δ <=2% DYNAMIC SWITCHING ON/OFF Turn-on delay time td(ON) Turn-on rise time trise Turn-off delay time td(OFF) Turn-off fall time tf all ID=37.5A,VDD=40V, VGS=10V,RG=4.7ohm ID=37.5A,VDD=40V, VGS=10V,RG=4.7ohm ID=37.5A,VDD=40V, VGS=10V,RG=4.7ohm ID=37.5A,VDD=40V, VGS=10V,RG=4.7ohm SOURCE DRAIN DIODE Pulsed drain current ISM Diode forward voltage VSD VGS=0V, IS=75A 300 A 1.3 V 代理销售电话：13641469108 0755-83242658 QQ:543158798廖 先生 KIA semiconductors All right reserved 2 of 2