50 Amps, 60 Volts N-CHANNEL MOSFET 销售电话：13641469108廖先生 QQ:543158798 KIA 50N06 SEMICONDUCTORS 1.Description The KIA50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching 2. Features RDS(ON)=23mΩ@VGS=10V. Ultra low gate charge (typical 30nC) Low reverse transfer capacitance Fast switching capability 100％ avalanche energy specified Improved dv/dt capability 3. Pin configuration 1 of 9 Pin Function 1 Gate 2 Drain 3 Source KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 6. Absolute maximum ratings Parameter SymbolValueUnit VDSS60V VGSS±20V Drain to source voltage Gate to source voltage TJ=25 ºCID50A Continuous drain current TJ=100 ºCID35A Drain current pulsed (note1)IDM200A Single pulsed avalanche energy (note2)EAS480mJ Repetitive avalanche energy (note1)EAR13mJ Peak diode recovery dv/dt (note3)dv/dt7V/ns Total power dissipation(TJ=25 ºC)PD130W Derating factor above 25 ºCPD0.9W/ ºC Operating junction temperatureTJ-55 ~ +150ºC Storage temperatureTSTG-55 ~ +150ºC Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 3. Thermal resistance Parameter Thermal resistance, junction-to-case Thermal resistance,case-to-sink Thermal resistance,junction-to-ambient Symbol θJC θCS θJA Typ Max 1.15 0.5 62.5 2 of 9 Units ºC/W ºC/W ºC/W KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 7. Electrical characteristics Parameter Off characteristics Drain-source breakdown voltage Breakdown voltage temperature coefficient (TJ=25°C,unless otherwise notes) Test conditionsMinTypMaxUnit Symbol BVDSS ΔBVDSS/ΔTJ Drain-source leakage current IDSS Gate-source leakage current VGS=0V,ID=250μA ID=250μA, referenced to 25 ºC VDS=60V,VGS=0V VDS=48V,TC=125 ºC VGS=20V,VDS=0V VGS=-20V,VDS=0V 60 VDS=VGS, ID=250μA 2.0 V 0.07 IGSS Gate-source leakage Reverse On characteristics Gate threshold voltageVGS(TH) Static drain-source on-state V/ºC 1 1 100 -100 μA μA nA nA 4.0 V VGS=10V,ID=25A 18 23 mΩ VDS=25V,VGS=0V,f=1MHz 900 430 80 1220 550 100 pF pF pF 40 100 90 80 30 9.6 10 60 200 180 160 40 ns ns ns ns nC nC nC 1.5 V 50 A 200 A RDS(ON) resistance Dynamic characteristics Input capacitanceCISS Output capacitanceCOSS Reverse transfer capacitanceCRSS Switching characteristics Turn-on delay timetD(ON) Rise timetR Turn-off delay timetD(OFF) Fall timetF Total gate chargeQG Gate-source chargeQGS Gate-drain charge (miller charge)QGD Source-drain diode ratings and characteristics Diode forward voltageVSD Continuous source current Pulsed source current VDD=30V,ID=25A,RG=50Ω (note4,5) VDS=48V,VGS=10V,ID=50A (note4,5) IS VGS=0V,IS=50A Integral reverse p-n junction diode in the MOSFET ISM Reverse recovery timetRRVGS=0V,IS=50A 54 81 dIF/dt=100A/μs(note4)Reverse recovery chargeQRR Note:1. repetitive rating:pulse width limited by junction temperature 2.L=5.6mH,IAS=50A,VDD=25V,RG=0Ω,staring TJ=25ºC 3.ISD<50A,di/dt<300A/μs,VDD<BVDSS,staring TJ=25 ºC 4.Pulse test:pulse width<300μs,duty cycle<2% 5.Essentially independent of operating temperature 3 of 9 ns μC KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 8.Test circuits and waveforms 4 of 9 KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 5 of 9 KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 6 of 9 KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 9.Typical characteristics 7 of 9 KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 8 of 9 KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 9 of 9