KP200A1100~1800V Y24KPE 国标型-普通晶闸管(平板式) Chinese Type Phase Control Thyristors (Capsule Version) L iu j in g re ct i f ie r c o . , L t d . FEATURES 1). Center amplifying gate 2). Metal case with ceramic insulator 3). Low on-state and switching losses TYPICAL APPLICATIONS 1). AC controllers 2). DC and AC motor control 3). Controlled rectifiers IT(AV) VDRM/VRRM ITSM I2t 376A 1100~1800V 4.65 KA 108 103A2S THE MAIN PARAMETERS SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) 180 half sine wave 50Hz Ths=55℃ Double side cooled, Ths=97℃ 125 O IT(AV) Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM,tp=10ms VDSM&VRSM= VDRM&VRRM+100V 125 IDRM IRRM Repetitive peak off-state current Repetitive peak reverse current VD= VDRM VR= VRRM 125 ITSM I2t VTO rT VTM dv/dt Surge on-state current I2T for fusing coordination 10ms half sine wave VR=0.6VRRM 125 di/dt Critical rate of rise of on-state current Irm trr Qrr IGT VGT IH VGD Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Reverse recovery current Reverse recovery time Recovery charge Gate trigger current Gate trigger voltage Holding current Non-trigger gate voltage Rth(j-h) Thermal resistance Junction to heatsink Fm Tstg Wt Size Mounting force Stored temperature Weight Package box size www.china-liujing.com Min VALUE Type 1100 Max UNIT 376 200 A 1800 V 16 mA ITM=770A, F=5.0KN VDM=0.67VDRM 125 125 4.65 108 0.85 1.20 1.77 1000 VDM= 67%VDRM to600A, Gate pulse tr ≤0.5μs IGM=1.5A 125 500 A/μs 100 12 600 200 2.0 150 A μs μC 0.095 ℃ /W 5.5 140 KN ℃ 125 ITM=300A,tp=1000μs, di/dt=-20A/μs, VR=50V 125 VA=12V, IA=1A 25 VDM=0.67VDRM 125 30 0.8 20 0.3 At 180°sine, double side cooled Clamping force 5.0KN 3.3 -40 55 95×95×50 KA 2 A s*103 V mΩ V V/μs mA V mA V g mm 1/3 KP200A1100~1800V PERFORMANCE CURVES FIGURE Max. junction To heatsink Thermai Impedance Vs.Time Peak On-state Voltage<.3( Vs.Peak On-state Current Transient thermal impedance°C/W Instantaneous on-state voltage,voltsV T J=125e C Time,seconds Instantaneous on-state currant,amperes Fig.1 Max. heatsink Temperature Vs.Mean On-state Current <.3( Max. Power Dissipation Vs.Mean On-state Current <.3( Max.on-state dissipation ,watts Conduction Angle Heatsink temperature,e C Conduction Angle Fig.3 Max. Power Dissipation Vs.Mean On-state Current <.3( <.3( Max. heatsink Temperature Vs.Mean On-state Current 360 Heatsink temperature,e C Conduction Angle 360 Conduction Angle '& Fig.4 Mean on-state current,amperes Mean on-state current,amperes Max.on-state dissipation ,watts '& Mean on-state current,amperes Mean on-state current,amperes Fig.5 Fig.6 Surge Current 4.5 Vs.Cycles 2 I t101---4.5 Vs.Time 120 Maximum I2t(Kamps2,secs) Total peak half-sine surge current,kA Fig.2 100 80 60 40 20 Cycles at 50Hz Fig.7 www.china-liujing.com 1 10 Time,m.seconds Fig.8 2/3 KP200A1100~1800V Gate characteristic at 25e C junction temperature Gate Trigger Zone at varies temperature 9P$ -30e C -10e C PGM=100W (100嘕 s spulse PD[ Gate voltageVGT ,V Gate voltageVGT ,V PLQ 3*: 25e C 125e C Gate currentIGT,A Fig.9 Gate currentIGT,mA Fig.10 OUTLINE E-mail: rectifi[email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. LIUJING reserves the right to change limits, test conditions and dimensions. 윤정은 이 칼타로그 중에 데이트, 테스트 조건, 외형사이즈에 대한 최종 해석권을 가지고 있습니다. www.china-liujing.com 3/3