MICROCHIP MCP18480

M
MCP18480
-48V Hot Swap Controller
Features
Description
• Allows safe board removal and insertion from a
live backplane
• Accurate (<1.5%) internal voltage reference for
fault detection and precision timing
• Programmable foldback current limiting
• Programmable circuit breaker current limiting
• Auto restart option for all faults
• Adjustable Undervoltage lockout thresholds
• Adjustable Overvoltage protection threshold
• Adjustable Power Good delay
• Configurable Power Good output polarity
• Low-side drive of an external N-channel FET
The MCP18480 is a Hot Swap controller that allows
boards to be safely removed or inserted from an active
backplane using -48V.
CMOS Technology
• High-Voltage Operation
• Temperature range: Industrial (I): -40°C to +85°C
Packaging
• 20-lead SSOP
Package Type
SSOP
1
20
OVTH
2
19
ENABLE
UVTH
3
18
PWRGOOD
UV HYS
4
17
OVO
UVD
5
16
DRAINTH
VREFOUT
6
15
VFB
MCP18480
VPOS
RESTART
VREFIN
7
14
GATE
CL
8
13
SENSE
ISET
9
12
RDISCH
10
11
VNEG
TIMER
 2003 Microchip Technology Inc.
When PCBs are inserted into a live backplane, highpeak or transient currents from the source are generated due to the charging of the bypass capacitors on
the supply. The high transient currents can destroy
connectors and capacitors. The high inrush current can
pull the input voltage BUS down and reset the system.
The MCP18480 solves this problem by controlling the
slew rate of the backplane voltage to the board so that
these transients are eliminated. This allows boards to
be removed and inserted without causing damage to
connector pins and input bulk capacitors, in addition to
preventing false resets to the other boards on the
backplane.
The MCP18480 can be used in applications in several
areas including:
•
•
•
•
•
•
•
•
Telecom Line Cards
Network Switches
Network Routers and Servers
Base Station Line Cards
Power-Over-LAN
Power-Over-MDI
IP Phone Switches/Routers
Mid-Span, Power-Over-MDI
Two forms of current limit are provided in the
MCP18480. These are:
• Foldback
• Circuit breaker
The foldback current-limiting circuit uses an external
sense resistor and a voltage that is proportional to the
external MOSFET’s drain voltage. These are used to
keep the MOSFET in its Safe Operating Area (SOA).
If the device remains in current limit for a programmed
time period, the external N-channel FET is turned off.
The option exists to configure the device to automatically restart after a programmed time delay. A programmable catastrophic current limit threshold shuts down
the switch (circuit breaker) if excessive current is
sensed due to a short-circuit condition.
DS20091B-page 1
MCP18480
The PWRGOOD pin indicates the status of the
MCP18480 and is active when the device has completed power-up and the system is not in an Undervoltage, Overvoltage or current-limit condition.
Internal comparators are incorporated to add hysteresis for adjusting the Undervoltage Lockout (UVLO)
threshold. The external N-channel MOSFET is turned
on when the input is below the user-programmable,
Overvoltage threshold and above the userprogrammable, Undervoltage threshold.
PWRGOOD can be externally configured to either
active-high or active-low to accommodate external circuitry (power supplies) that have either enabling logic.
A block diagram of the MCP18480 is shown below.
MCP18480 Block Diagram
VPOS
DRAINTH
VPOS
FET Good
(Section 6.8.3)
BIAS
GATE
Drive
12VOUT
5V
Reg.
OVO
Overvoltage
(Section 6.8.2)
UVTH
UVD
Undervoltage
(Section 6.8.1)
VFB
SENSE
CL
ENABLE
RESTART
Latch
(Section
6.8.6)
VNEG
TIMEOUT
UVHYS
5VOUT
Current Limit Feedback
OVTH
SENSE
Undervoltage Active
Internal
Bias
Generation
Overvoltage Active
ISET
GATE
(Section 6.8.7)
5V OUT
VREFOUT
VREFIN
PWRGOOD (1)
12V
Regulator
LATCHOFF
VNEG
PWRGOOD
Output Block
(Section 6.8.9)
(Section 6.8.8)
Current Limit
(Section 6.8.4)
Current Limit Timer
Circuit Breaker
TIMER
Timer
(Section 6.8.5)
RDISCH
MCP18480
Note 1:
The PWRGOOD output pin can be either active-high or active-low. This polarity is determined by the
voltage (either the level on the VREFIN pin or level on the VNEG pin) on the ISET pin:
- Connecting the external RISET resistor to VREFIN configures the PWRGOOD pin as active-low
- Connecting the external RISET resistor to VNEG configures the PWRGOOD pin as active-high
DS20091B-page 2
 2003 Microchip Technology Inc.
MCP18480
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Ambient Temperature under bias ........ –40°C to +85°C
Max. Output Current sourced by VREFOUT pin .....5 mA
Max. Output Current sourced by any other
Output pin...........................................................25 mA
Storage Temperature ........................ –65°C to +150°C
Voltage on VPOS with respect to VNEG -0.3V to +15.0V
Voltage on DVTH, UVTH, VFB, OVO and UVHYS pins
with respect to VNEG ..... VNEG – 0.3V to (VPOS + 0.3V)
Junction to Ambient, ΘJA
(20 pin SSOP Package) Derating ............... 108.1°C/W
Junction to Case, ΘJC
(20 pin SSOP Package) Derating ................. 32.2°C/W
Voltage on VREFIN, CL, SENSE, DRAINTH, ENABLE
and RESTART pins with respect to VNEG
........................................................ VNEG - 0.3V to 6V.
Lead Temperature, Soldering, 10 seconds ........ 300°C
Total Power Dissipation (Note 1) .................... 800 mW
Max. Output Current sunk by V REFOUT pin .......... 5 mA
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
Max. Output Current sunk by any other
Output pin......................................................... 25 mA
PDIS = VDD x {IDD - Σ IOH} + Σ{(V DD-V OH) x IOH} + Σ(VOL x IOL)
Max. Current out of VNEG pin............................. 80 mA
Max. Current into VPOS pin ................................ 50 mA
Max. Output Current sunk by Gate pin............... 80 mA
Note 1: Power Dissipation is calculated as follows:
Max. Output Current sourced by Gate pin ........ 200 µA
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, operating temperature: –40°C ≤ TA ≤ +85°C (Industrial),
Supply Current: 5 mA ≤ IPOS ≤ 25 mA, RISET = 125 kΩ, CBYP = 2 µF.
Param.
No.
MD001
MD001A
Parameter
Sym
Min
Typ (1)
Max
Units
Current into shunt regulator
that produces VPOS output voltage that meets MD001A specification
IPOS1
5
—
25
mA
5
—
25
Regulated Output Voltage
Differential of VPOS to VNEG
VPOS
10.4
12.0
13.4
V
See MD001
Load = 50 µA
MD002
VREFOUT pin output voltage
VREFOUT
2.463
2.5
2.538
V
VGATE pin output voltage
VGATE
VPOS - 2
VPOS -1
VPOS
V
MD011
Voltage on ISET pin
VISET
(VREFIN/2) 0.02
VREFIN /2
(VREFIN /2)
+0.02
V
MD012A
Voltage on SENSE pin to
trigger current-limiting
VSENSE
7
MD013
Undervoltage Threshold
UVTH
VREFIN
- 0.03
MD014A
Overvoltage
Threshold
rising
OVTH
VREFIN
- 0.05
falling
OVTH
V DTH
MD012C
MD014B
MD015
DRAIN Pin Input Threshold
Voltage
ENABLE pin = 5V
ENABLE pin = V NEG
MD010
MD012B
Conditions
40
50
60
mV
V FB = VNEG
25
31.0
40
mV
V FB = VNEG + 0.25V
12
17
mV
V FB = VNEG + 0.5V
VREFIN
VREFIN
+ 0.03
V
VREFIN
VREFIN
+ 0.05
V
VREFIN = 2.5V
VREFIN
- 0.035
VREFIN
- 0.02
VREFIN
- 0.005
V
VREFIN = 2.5V
90
100
130
mV
Note 1: Data in the Typical (“Typ”) column is based on characterization results at +25°C. This data is for design guidance only
and is not tested.
2: Negative current is defined as current sourced by the pin.
3: All voltages are with respect to the V NEG pin voltage.
 2003 Microchip Technology Inc.
DS20091B-page 3
MCP18480
DC Characteristics (Continued)
Electrical Specification: Unless otherwise specified, operating temperature: –40°C ≤ TA ≤ +85°C (Industrial),
Supply Current: 5 mA ≤ IPOS ≤ 25 mA, RISET = 125 kΩ, CBYP = 2 µF
Param.
No.
Parameter
Sym
Min
Typ (1)
Max
Units
MD020
DRAIN pin current
IDRAIN
—
—
0.1
µA
MD021
SENSE pin current
ISENSE
—
—
0.1
µA
MD022
GATE pin current
Pull-up
MD022B
MD022C
MD023
UVD pin current
MD024A
TIMER pin current
MD024B
MD025
-30
-50
-75
µA
-9
-17
-33
µA
31
49
72
mA
VFB = VNEG
VFB = VNEG + 500 mV
Any fault condition
Pull-down
IGATE
IUVD
-7
-10
-15
µA
UV TH < VREFIN
Pull-up
ITIMER
-100
-160
-200
µA
RISET = 125 kΩ,
VREFIN = 2.5V
52
78
104
nA
RISET = 125 kΩ,
VREFIN = 2.5V
RDISCH = 1.6 MΩ
VISET(MIN)
—
VISET(MAX)
A
See MD011
Pull-down
ISET pin current
DRAINTH pin = VNEG
SENSE pin = VNEG
GATE pin = VNEG +4V
IGATE
MD022A
Conditions
IISET
RISET(MAX)
RISET(MIN)
Note 1: Data in the Typical (“Typ”) column is based on characterization results at +25°C. This data is for design guidance only
and is not tested.
2: Negative current is defined as current sourced by the pin.
3: All voltages are with respect to the V NEG pin voltage.
DS20091B-page 4
 2003 Microchip Technology Inc.
MCP18480
DC Characteristics (Continued)
Electrical Specifications: Unless otherwise specified, operating temperature: –40°C ≤ TA ≤ +85°C (Industrial),
Supply Current: 5 mA ≤ IPOS ≤ 25 mA, RISET = 125 kΩ, CBYP = 2 µF.
Param #
Parameter
Sym
Min
Typ
Max
Units
V
MD030
Input Low Voltage
MD031
ENABLE pin
VNEG
—
0.8
MD032
RESTART pin
VNEG
—
0.8
MD040
Input High Voltage
Conditions
VIL
V IH
MD041
ENABLE pin
2.0
—
5.0
MD042
RESTART pin
2.0
—
5.0
V
500
1200
2100
Ω
VUVTH < VREFIN,
IUVHYS = 30 µA
50
100
—
MΩ
VUVTH > VREFIN,
IUVHYS = 30 µA
-1
—
+1
µA
VNEG ≤ VPIN ≤ 11V, Pin
at high-impedance
—
—
±1
µA
VNEG ≤ VPIN ≤ 5V,
Pin at hi-impedance
—
10
30
µA
IPOS = 5 mA,
ENABLE = 0.8V
0
—
0.4
V
IOL = 5 mA
IOH = 2 mA,
7 mA ≤ IPOS ≤ 12 mA
MD050
Internal Resistance on UV HYS pin
RUVHYS
V
Input Leakage Current
(Notes 2, 3)
MD060A
OVTH, UVTH , VFB, OVO and UVHYS
pins
MD060B
VREFIN, CL, SENSE, DRAIN TH,
ENABLE and RESTART pins
MD070
Minimum current into ENABLE pin
to disable MCP18480
IEN
Output Low Voltage
VOL
MD080
PWRGOOD pin
Output High Voltage
MD090
PWRGOOD pin
MD100
Offset Voltage at the internal
comparator input that is connected
to the CL pin.
IIL
—
VOH
VCL
0.8 VPOS
0.96 VPOS
VPOS
V
-15
—
+15
mV
VFB = 0
Note 1: All voltages are with respect to the V NEG pin voltage.
2: The leakage currents on the ENABLE and RESTART pins are strongly dependent on the applied voltage level. The specified levels represent normal operating conditions. Higher leakage current may be measured at different input voltages.
3: Negative current is defined as coming out of the pin.
 2003 Microchip Technology Inc.
DS20091B-page 5
MCP18480
1.1
Timing Parameter Symbology and Load Conditions
The timing parameter symbols have been created using one of the following formats:
1.1.1
TIMING CONDITIONS
The temperature and voltages specified in Table 1-2 apply to all timing specifications, unless otherwise noted.
Figure 1-1 specifies the load conditions for the timing specifications.
TABLE 1-1:
SYMBOLOGY
1. TppS2ppS
2. TppS
T
F
Frequency
E
Error
T
Time
Lowercase letters (pp) indicate the device pin.
Uppercase letters and their meanings:
S
F
Fall
P
Period
FR
Fast Ramp
R
Rise
H
High
V
Valid
I
Invalid (Hi-impedance)
Z
Hi-impedance
L
Low
TABLE 1-2:
AC TEMPERATURE AND VOLTAGE SPECIFICATIONS
AC CHARACTERISTICS
DS20091B-page 6
Standard Operating Conditions (unless otherwise stated)
Operating temperature: –40°C ≤ TA ≤ +85°C (industrial)
Operating voltage VDD range as described in DC spec Section 1.0.
 2003 Microchip Technology Inc.
MCP18480
GND
RBYPL
51 kΩ
RZ
RPOS
ROV1
4 kΩ
1.74 MΩ
CBYP1 +
2 µF
CBYP2
10 nF
78V
Transorb
ROV2
59 kΩ
453 kΩ
5V
RUVHYS
RUV2
280 kΩ
30.9 kΩ
CUVD
800 nF
RISET
1
VPOS
RESTART 20
2
OVTH
ENABLE 19
3
UVTH
PWRGOOD 18
4
UVHYS
5
UVD
6
VREFOUT
7
VREFIN
8
CL
SENSE 13
9
ISET
RDISCH 12
124 kΩ
VNEG
Ctimer
680 nF
Fuse 10A
DC/DC
OVO 17
SEN
RPG1
Converter
Module
RPG3
680Ω
RPG4
36 kΩ
110 kΩ
QPG2
2N5400
QPG1
MPSA43
GOODPWR
RPG5
36 kΩ
QPG3
NTE261
RPG6
1500Ω
DRAINTH 16
10 TIMER
VIN+ VOUT+
SRS
24.9 kΩ
RUV1
CBYPL
100 µF
100 V
VFB 15
ON/OFF
VIN- VOUT-
GATE 14
VNEG 11
MCP18480
RDISCH
1.6 MΩ
RGD
18 kΩ
RPG2
7.5 kΩ
RSENSE
0.01Ω
CG1
RG1
100 nF 10Ω
CGD
3.3 nF
M1
NTE2388
FIGURE 1-1:
RFB2
RFB1
124 kΩ
1.74 MΩ
RDRAIN2
RDRAIN1
115 kΩ
1.6 MΩ
ROVO2
ROVO1
59 kΩ
1.74 MΩ
Load Conditions for Device Timing Specifications.
 2003 Microchip Technology Inc.
DS20091B-page 7
MCP18480
1.2
Timing Diagrams and Specifications
> 2.5V
UVTH
< 2.5V
OVTH
= 2.5V
VREFOUT
DRAINTH
= 5V (1)
GATE
MA001B
PWRGOOD
= 12V
MA001A
MA002
MA000
Note 1: This voltage is determined by the threshold voltage of the external FET.
This voltage needs to ensure the external FET is fully enhanced.
FIGURE 1-2:
TABLE 1-3:
Param.
No.
MA000
Startup Waveforms.
STARTUP TIMING REQUIREMENTS
Parameter
UVTH/OVTH High (VPOS applied) to
DRAINTH falling
MA001A DRAINTH falling to PWRGOOD High
MA001B DRAINTH falling to GATE Fast Ramp
MA002
Note:
GATE Fast Ramp to external FET
fully enhanced
Sym
Min
Typ
Max Units
TUVOVH2DTHF
—
20.2
—
ms
TDTHF2GATEPGH
—
19.3
—
ms
TDTHF2GATEFR
—
13.1
—
ms
TGATEFR2FETE
—
16.1
—
ms
Conditions
Minimum and maximum specifications will be provided in future revisions of this data sheet.
DS20091B-page 8
 2003 Microchip Technology Inc.
MCP18480
ENABLE
MA012
GATE
(1)
MA010
MA011
Note 1: This voltage is determined by the threshold voltage of the external FET.
This voltage needs to ensure the external FET is fully enhanced.
FIGURE 1-3:
TABLE 1-4:
Param.
No.
MA010
ENABLE-to-GATE Waveforms.
ENABLE-TO-GATE TIMING REQUIREMENTS
Parameter
ENABLE Low to GATE Low
MA011
ENABLE High to GATE Fast Ramp
MA012
GATE Fast Ramp to GATE High
Note:
Sym
Min
TENL2GATEL
—
Typ Max Units
23.6
—
Conditions
µs
TENH2GATEFR
—
41
—
ms
TGATEFR2GATEH
—
17.8
—
ms
Minimum and maximum specifications will be provided in future revisions of this data sheet.
 2003 Microchip Technology Inc.
DS20091B-page 9
MCP18480
VREFIN + V OVO
OVTH
VREFIN + VOVO - 20 mV
GATE(1)
MA022
MA020
MA021
Note 1: This voltage is determined by the threshold voltage of the external FET.
This voltage needs to ensure the external FET is fully enhanced.
FIGURE 1-4:
TABLE 1-5:
Param.
No.
MA020
OVTH-to-gate Waveform.
OV TH-TO-GATE TIMING REQUIREMENTS
Parameter
OVTH High to GATE Low
Sym
Min
TOVH2GATEL
—
Typ Max Units
58.4
—
µs
MA021
OVTH Low to GATE Fast Ramp
TOVL2GATEFR
—
40.8
—
µs
MA022
GATE Fast Ramp to GATE High
TGATEFR2GATEH
—
17.8
—
ms
Note:
Conditions
Minimum and maximum specifications will be provided in future revisions of this data sheet.
DS20091B-page 10
 2003 Microchip Technology Inc.
MCP18480
UVTH
VREFIN - 262 mV
VREFIN
MA030
GATE (1)
MA033
MA032
MA031
Note 1: This voltage is determined by the threshold voltage of the external FET.
This voltage needs to ensure the external FET is fully enhanced.
FIGURE 1-5:
TABLE 1-6:
Param.
No.
UVTH-to-gate Waveform
UVTH-TO-GATE TIMING REQUIREMENTS
Parameter
MA030
UVTH Low to GATE Falling Edge
Sym
Min
Typ(1)
TUVL2GATEF
—
108
—
Max Units
µs
MA031
GATE High to GATE Low
TGATEH2GATEL
—
25.8
—
µs
MA032
ENABLE High to GATE Fast Ramp
TUVH2GATEFR
—
40.4
—
ms
MA033
GATE Fast Ramp to GATE High
TGATEFR2GATEH
—
58.4
—
ms
Conditions
CUVD = 800 nF
Note 1: Data in the Typical (“Typ”) column is at 5V, 25°C, unless otherwise stated.
2: Minimum and maximum specifications will be provided in future revisions of this data sheet.
 2003 Microchip Technology Inc.
DS20091B-page 11
MCP18480
Foldback Current-Limiting
SENSE
GATE
MA041
Recovery from Foldback Current-Limiting
SENSE
GATE
MA042
Circuit Breaker Current-Limiting
SENSE
GATE
MA043
FIGURE 1-6:
TABLE 1-7:
Param.
No.
Sense-to-gate Waveform.
SENSE-TO-GATE TIMING REQUIREMENTS
Parameter
MA041
GATE Current Limit to GATE Off
MA042
GATE Current Limit Recovery
MA043
SENSE High to GATE Off
Note:
Sym
Min
Typ Max Units
Conditions
TGATECL2GATEO
—
5.5
—
ms
CTIMER = 0.68 µF
RISET = 124 kΩ
TGATECL
—
10.2
—
ms
CTIMER = 0.68 µF
RISET = 124 kΩ
TSENSEH2GATEO
—
3.6
—
ms
Minimum and maximum specifications will be provided in future revisions of this data sheet.
DS20091B-page 12
 2003 Microchip Technology Inc.
MCP18480
External Short Condition On-Board
RESTART
ENABLE
SENSE
GATE
Timer
MA054
MA051
MA053
MA055
MA050
FIGURE 1-7:
TABLE 1-8:
Param.
No.
Current Limit Waveform.
CURRENT LIMIT TIMING REQUIREMENTS
Parameter
Sym
Min
Typ
Max Units
Conditions
MA050
External Short to Timer period start
TSHORT2TIMERS
—
171
—
mS
MA051
Timer period
TTIMERP
—
5.8
—
sec
CTIMER = 0.68 µF
RDISCH = 1.6 MΩ
MA053
ENABLE High to Timer period start
TENABLEH2TIMERS
—
30.5
—
mS
CTIMER = 0.68 µF
RDISCH = 1.6 MΩ
MA054
RESTART Low to Timer period
start
TRESTARTL2TIMERS
—
30.9
—
mS
CTIMER = 0.68 µF
RDISCH = 11.6 MΩ
MA055
External Short removed to Timer off
Note 2
TNOSHORT2TIMERO
—
5.8
—
sec
CTIMER = 0.68 µF
RDISCH = 1.6 MΩ
Note 1: Minimum and maximum specifications will be provided in future revisions of this data sheet.
2: This is up to one additional timer period because the external short circuit is removed asynchronously to
the timer. The timer must time out before normal operation returns.
 2003 Microchip Technology Inc.
DS20091B-page 13
MCP18480
NOTES:
DS20091B-page 14
 2003 Microchip Technology Inc.
MCP18480
2.0
DC CHARACTERISTIC CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
11.90
TA = +25°C
TA = -5°C
Supply Voltage, VPOS (V)
TA = +85°C
11.900
TA = +70°C
11.400
TA = -40°C
IPOS = 5 mA
11.85
11.80
11.75
11.70
11.65
10.900
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
-45
-35
-25
-15
-5
5
15
25
35
45
55
65
75
85
95
105
115
125
Supply Voltage, VPOS (V)
12.400
Supply Current, I POS (mA)
Temperature (°C)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
VREFIN = 2.5V, ISET = 10 µA
Minimum Supply Current to bring VPOS into
regulation
FIGURE 2-1:
Supply Current (IPOS) vs.
Supply Voltage (VPOS).
 2003 Microchip Technology Inc.
VREFIN = 2.5V, ISET = 10 µA
FIGURE 2-2:
Temperature.
Minimum Supply Current vs.
DS20091B-page 15
MCP18480
12.0
0.35
Gate Voltage (V)
0.30
TA = +70°C
0.25
TA = 0°C
TA = +25°C
0.20
TA = -40°C
Gate Output Vol (mV)
11.0
TA = +85°C
10.0
9.0
8.0
TA = +85°C
7.0
TA = +25°C
6.0
TA = 0°C
5.0
4.0
TA = -40°C
3.0
2.0
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
0.15
3
5
7
9
11
13
15
17
19
21
23
25
Supply Current (mA)
Supply Current (mA)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
3 mA ≤ IPOS ≤ 30 mA
3 mA ≤ IPOS ≤ 30 mA
VREFIN = 2.5V, ISET = 10 µA
Note 1:
VREFIN = 2.5V, ISET = 10 µA
VUVTH > VVREFIN
VOVTH < VVREFIN
VSENSE = V VNEG
VVFB = VVNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = VVNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = VVREFIN
VENABLE = V VNEG
VRESTART = V VNEG (open)
FIGURE 2-3:
GATE Output High-Voltage
(VPOS- VGATE) vs. Supply Current (IPOS).
DS20091B-page 16
Note 1:
FIGURE 2-4:
GATE Output Low-Voltage
(VGATE - VNEG) vs. Supply Current (IPOS).
 2003 Microchip Technology Inc.
MCP18480
60
Gate Current (mA)
Gate Pull-up Current (µA)
55
50
45
40
35
-40
55
50
45
40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature (°C)
Temperature (°C)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
Note 1:
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
FIGURE 2-5:
GATE Source (Pull-Up)
Current vs. Temperature.
 2003 Microchip Technology Inc.
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
Note 1:
VGATE > 0.5V
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = VVNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = VVREFIN
VENABLE = V VNEG
VRESTART = V VNEG (open)
FIGURE 2-6:
GATE Sink (Pull-Down)
Current vs. Temperature.
DS20091B-page 17
-5
-15
-25
-35
-45
-55
-65
-75
-85
-95
-105
TA = +85°C
PWRGOOD, V OL (V)
Gate Current (uA)
MCP18480
TA = +25°C
TA = -40°C
-30 -25 -20 -15 -10 -5
0
5
0.26
0.25
0.24
0.23
0.22
0.21
0.20
0.19
0.18
0.17
10 15 20 25 30
-40
ISET Current (uA)
-20
0
20
40
60
80
Temperature (°C)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
-50 µA µA < IISET < 50 µA (IISET ≠ 0)
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V
ILOAD = 1 mA
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
Note 1:
VGATE > 0.5V
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-7:
ISET Pin Current.
DS20091B-page 18
GATE Source Current vs.
Note 1:
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = VVNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = VVREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-8:
PWRGOOD Output Low
Voltage (VOL) vs. Temperature.
 2003 Microchip Technology Inc.
MCP18480
PWRGOOD VOH (%VPOS )
97.3
97.0
96.8
96.5
96.3
96.0
95.8
95.5
-40
-20
0
20
40
60
80
Temperature (°C)
PWRGOOD Output Impedance
(Ohms)
245
97.5
235
225
215
205
195
185
175
165
155
-40
Data taken with the minimum following conditions:
ILOAD = -1 mA
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
Note 1:
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-9:
PWRGOOD Output HighVoltage (VOH) vs. Temperature.
 2003 Microchip Technology Inc.
-20
0
20
40
Temperature (°C)
60
80
Data taken with the minimum following conditions:
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
Note 1:
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = VVNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = VVREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-10:
PWRGOOD Output HighImpedance vs. Temperature.
DS20091B-page 19
PWRGOOD Output Impedance
(Ohms)
MCP18480
250
240
230
220
210
200
190
180
-40
-20
0
20
40
60
80
Temperature (°C)
Data taken with the minimum following conditions:
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
Note 1:
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-11:
PWRGOOD Output LowImpedance vs. Temperature.
DS20091B-page 20
 2003 Microchip Technology Inc.
MCP18480
2.498
TA = +85°C
2.494
TA = 0°C
2.492
VREFOUT (V)
2.495
2.493
TA = -40°C
2.5
TA = +70°C
2.496
TA = 0°C
2.0
1.5
TA = +25°C
1.0
TA = +70°C
0.5
2.491
TA = -40°C
3
4
5
TA = +85°C
0.0
2.490
6
7
8
9 10 11 12 13 14 15
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
4.25
4.5
4.75
5
VREFOUT (V)
3.0
TA = +25°C
2.497
Supply Current, I POS (mA)
LOAD Current (mA)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
3 mA ≤ IPOS ≤ 30 mA
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, Iset = 10 µA
VREFIN = 2.5V, ISET = 10 µA
FIGURE 2-12:
(IPOS).
VREFOUT vs. Supply Current
 2003 Microchip Technology Inc.
FIGURE 2-13:
VREFOUT vs. LOAD.
DS20091B-page 21
MCP18480
TA = +85°C
2.0
1.8
TA = +25°C
1.6
1.4
TA = -40°C
1.2
0
-25
-50
-75
-100
-125
TA = +85°C
TA = +85°C
-150
-175
TA = -40°C
-200
-225
TA = -40°C
TA = +25°C
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
TA = +25°C
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
1.0
Timer Pin Current (µA)
Timer Pin Current (uA)
2.2
RDISCH Current (uA)
ISET Current (uA)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
-50 µA < IISET < 50 µA (IISET ≠ 0)
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V
-50 µA < IISET < 50 µA (IISET ≠ 0)
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V
Note 1:
Note 1:
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE ≥ 100mV
VVFB = VVNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = VVREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-14:
TIMER Pin Output Low
Current vs. R DISCH Current.
DS20091B-page 22
FIGURE 2-15:
TIMER Pin Output High
Current vs. ISET Current.
 2003 Microchip Technology Inc.
MCP18480
112
DRAIN TH Voltage (mV)
UVD Pin Current (µA)
0
-10
-20
TA = -40°C
-30
TA = +70°C
TA = 0°C
-40
TA = +85°C
-50
TA = +25°C
-60
TA = +85°C
111
TA = +70°C
110
TA = +25°C
109
108
TA = 0°C
107
TA = -40°C
106
105
-50 -40 -30 -20 -10
0
10
20
30
40
50
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
ISET Pin Current (µA)
Supply Current, IPOS (mA)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
-50 µA < IISET < 50 µA (IISET ≠ 0)
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V
3 mA ≤ IPOS ≤ 30 mA
VREFIN = 2.5V, ISET = 10 µA
Determined by PWRGOOD signal
Note 1:
Note 1:
VUVTH < VVREFIN
VOVTH < V VREFIN
VSENSE = V VNEG
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = VVNEG
VOVO = VVNEG
VCL = VVREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
UVD Pin Current vs. ISET Pin
FIGURE 2-16:
Current.
FIGURE 2-18:
DRAINTH Threshold Voltage
vs. Supply current (IPOS).
ISET Pin Voltage (V)
1.35
1.30
TA = +70°C
1.25
1.20
TA = +25°C
TA = 0°C
TA = -40°C
1.15
1.10
1.05
1.00
2.00
TA = +85°C
2.10
2.20
2.30
2.40
2.50
2.60
VREFIN Pin Voltage (V)
Data taken with the minimum following conditions:
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
Iset = 10 µA
FIGURE 2-17:
Pin Voltage.
ISET Pin Voltage vs. VREFIN
 2003 Microchip Technology Inc.
DS20091B-page 23
MCP18480
1.310
TA = -40°C
860
850
TA = +25°C
840
830
TA = +85°C
820
RDISCH Voltage (V)
RDISCH Current (nA)
870
1.300
TA = +85°C
1.290
1.280
1.270
TA = +25°C
1.260
TA = -40°C
1.250
5
10
15
20
25
0
5
10
15
20
25
30
35
40
45
50
RDISCH Current (uA)
Supply Current, IPOS (mA)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
RDISCH = 16 MΩ
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
IRDISCH from 100 nA to 10 µA (500 nA steps)
Note 1:
Note 1:
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = VVNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = VVREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-19:
Current (IPOS).
DS20091B-page 24
R DISCH Current vs. Supply
FIGURE 2-20:
Current.
RDISCH Voltage vs. RDISCH
 2003 Microchip Technology Inc.
MCP18480
Enable/Restart, VIL (V)
1.43
1.42
1.41
1.40
1.39
1.38
1.37
1.36
-40
-20
0
20
40
60
80
Temperature (°C)
Data taken with the minimum following conditions:
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
Determined by GATE voltage
Note 1:
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VRESTART = V VNEG (open)
FIGURE 2-21:
ENABLE/RESTART Pin Trip
Point Voltage vs. Temperature.
 2003 Microchip Technology Inc.
DS20091B-page 25
-152.0
87.0
86.5
86.0
85.5
85.0
84.5
84.0
83.5
83.0
82.5
82.0
-152.3
Timer Current (uA)
Timer Current (nA)
MCP18480
-152.5
-152.8
-153.0
-153.3
-153.5
-153.8
-154.0
-40
-20
0
20
40
Temperature (°C)
60
-40
80
-20
0
20
40
60
80
Temperature (°C)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
RDISCH = 16 MΩ
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
0.1V ≤ VTIMER ≤ 1.25V
RDISCH = 16 MΩ
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
0.1V ≤ VTIMER ≤ 1.25V
Note 1:
Note 1:
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VNEG, I into device
VNEG + 100mV, I out of device
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = VNEG, I into device
VNEG + 100mV, I out of device
VVFB = VVNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = VVREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-22:
vs. Temperature.
DS20091B-page 26
TIMER Output Sink Current
FIGURE 2-23:
TIMER Output Source
Current vs. Temperature.
 2003 Microchip Technology Inc.
1.50
0.50
0.00
55
VSENSE = 30 mV
1.00
SENSE Pin Voltage (mV)
CL Pin Offset Voltage, VOS (mV)
MCP18480
V SENSE = 20 mV
-0.50
-1.00
VSENSE = 40 mV
-1.50
-2.00
50
Vfb = 0V
45
40
Vfb = 0.25V
35
30
25
20
Vfb = 0.5V
Vfb = 1V
15
10
-2.50
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature (°C)
Temperature (°C)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
Use TIMER pin as indicator
Note 1:
VUVTH > VVREFIN
VOVTH < V VREFIN
VSENSE = 25mV
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-24:
vs. Temperature.
CL pin Input Offset Voltage
 2003 Microchip Technology Inc.
Note 1:
VUVTH > VVREFIN
VOVTH < V VREFIN
VVFB = VNEG, VNEG+ 250mV,
VNEG+500mv, VNEG+1V
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = VVREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-25:
vs. Temperature.
SENSE Pin Input Threshold
DS20091B-page 27
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
OVTH Input Low Voltage, VIL (V)
OVTH Input High Voltage (V)
MCP18480
TA = +85°C
TA = -40°C
TA = +70°C
TA = +25°C
TA = +0°C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
2.480
TA = +85°C
TA = +70°C
2.479
TA = +25°C
2.478
2.477
2.476
TA = 0°C
2.475
TA = -40°C
2.474
0
8.0
OVO Voltage (V)
1
2
3
4
5
6
7
8
OVO Voltage (V)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
OVO = VNEG to 8V
VREFIN = 2.5V, ISET = 10 µA
Use PWRGOOD pin as indicator
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
OVO = VNEG to 8V
VREFIN = 2.5V, ISET= 10 µA
Use PWRGOOD pin as indicator
Note 1:
Note 1:
VUVTH > VVREFIN
VSENSE = VVNEG
VVFB = V VNEG
VDRAINTH = V VNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
VUVTH > VVREFIN
VSENSE = VVNEG
VVFB = VVNEG
VDRAINTH = V VNEG
VCL = VVREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-26:
vs. OVO Voltage.
DS20091B-page 28
OV TH Input Rising Threshold
FIGURE 2-27:
OVTH Input Falling
Threshold vs. OVO Voltage.
 2003 Microchip Technology Inc.
-9.90
UVD Current (uA)
TA = -40°C
-9.95
TA = 0°C
-10.00
TA = +25°C
-10.05
TA = +70°C
-10.10
TA = +85°C
-10.15
5
10
15
20
25
UVHYS Pin Impedance (Ohms)
MCP18480
45000
40000
35000
30000
25000
20000
15000
OFF
10000
5000
ON
0
-40
30
-20
0
20
40
60
80
Temperature (°C)
Supply Current, IPOS (mA)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
IPOS = 5 mA
(Enables VPOS
at its self-regulating
self regulating voltage)
POS at
VREFIN = 2.5V, ISET = 10 µA
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
UVTH < VREFIN, UV TH > VREFIN
VREFIN = 2.5V, ISET = 10 µA
Note 1:
VUVTH < VVREFIN
VOVTH < V VREFIN
VSENSE = V VNEG
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-28:
Current (IPOS).
UVD Current vs. Supply
 2003 Microchip Technology Inc.
Note 1:
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = VVNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = VVREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-29:
Temperature.
UVHYS Pin Impedance vs.
DS20091B-page 29
2.5035
2.5034
UVTH Falling Threshold (V)
UVTH Rising Threshold (V)
MCP18480
2.5032
2.5030
2.5028
2.5026
2.5024
2.5022
2.5020
2.5018
-40
-20
0
20
40
60
2.5030
2.5025
2.5020
2.5015
2.5010
80
-40
-20
0
20
40
60
80
Temperature (°C)
Temperature (°C)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
Use PWRGOOD pin as indicator
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
Use PWRGOOD pin as indicator
Note 1:
Note 1:
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = VVNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = VVREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-30:
UVTH Input Rising
Threshold vs. Temperature.
DS20091B-page 30
FIGURE 2-31:
UVTH Input Falling
Threshold vs. Temperature.
 2003 Microchip Technology Inc.
2.4805
2.5087
OVTH Falling Threshold (V)
OVTH Rising Threshold (V)
MCP18480
2.5082
2.5077
2.5072
2.5067
2.5062
2.48
2.4795
2.479
2.4785
2.478
2.4775
2.5057
-40
-20
0
20
40
60
-40
80
Temperature (°C)
-20
0
20
40
60
80
Temperature (°C)
Data taken with the minimum following conditions:
Data taken with the minimum following conditions:
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
Use PWRGOOD pin as indicator
IPOS = 5 mA
(Enables VPOS at its self-regulating voltage)
VREFIN = 2.5V, ISET = 10 µA
VUVHYS = VNEG
Use PWRGOOD pin as indicator
Note 1:
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = V VNEG
VDRAINTH = V VNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = V VNEG (open)
FIGURE 2-32:
vs. Temperature.
OV TH Input Rising Threshold
 2003 Microchip Technology Inc.
Note 1:
VOVTH < V VREFIN
VSENSE = VVNEG
VVFB = VVNEG
VDRAINTH = VVNEG
VOVO = VVNEG
VCL = V VREFIN
VENABLE = 5V (open)
VRESTART = VVNEG (open)
FIGURE 2-33:
OVTH Input Falling
Threshold vs. Temperature.
DS20091B-page 31
MCP18480
NOTES:
DS20091B-page 32
 2003 Microchip Technology Inc.
MCP18480
3.0
PIN DESCRIPTIONS
TABLE 3-1:
Pin Name
MCP18480 PIN DESCRIPTIONS
Pin
Number
SSOP
VPOS
Pin
Direction
Buffer
Type
I
P
1
Description
Positive supply input.
Internal Shunt Regulator connected between V POS and VNEG limits the
potential to 12V between these two pins. A series resistor must be
placed on the V POS pin to limit the current into the device.
OVTH
2
I
A
Overvoltage protection threshold.
An external resistor divider network is connected to this input pin to
program the overvoltage protection threshold. The selected external
resistor values for the OVTH to system ground and OVTH to VNEG resistors should have currents in the 1 mA range. A typical Overvoltage
threshold is -76V. Internal hysteresis in the overvoltage input comparator will allow proper operation once VNEG falls below the selected
threshold.
UVTH
3
I
A
Undervoltage lockout threshold.
An external resistor divider network is connected to this input pin to
program the undervoltage lockout threshold. If the voltage on UV TH is
less than VNEG + 2.5V, the undervoltage comparator will trip, indicating
an Undervoltage condition.
An external hysteresis resistor can be used to set the high-to-low
(VTHF) threshold below the low-to-high (VTHR) threshold. For telecom
network equipment, it is desirable to have shutdown occur at -38.5V
and the startup set at -43.0V.
UVHYS
4
I
A
Undervoltage internal comparator hysteresis.
An external resistor is connected between this input to the UVTH input
pin to adjust the hysteresis of the internal Undervoltage comparator.
Since it is desirable to shut down at -38.5V and restart at -43.0V in
telecom switch equipment.
UVD
5
I/O
A
Undervoltage event delay.
An external capacitor is connected to this input pin to set the delay
between when the UVTH pin drops below the trip point specified by the
voltage on the VREFIN pin and when the system shutdown occurs
(causing the PWRGOOD pin to be driven to an inactive level and the
GATE pin to be pulled to the VNEG pin voltage level). The UVD pin
sources a current equivalent to the IISET (in typical applications, the
IISET current equals 10 µA), which charges this external capacitor
while an internal comparator compares this voltage on the UVD pin to
|VREFIN|/2.
Typically, for telecom equipment, the system is expected to shut down
when the input voltage falls below -38.5V (±1.0V DC) for greater than
100 ms.
Legend: TTL = TTL compatible input
I = Input
P = Power
A = Analog
 2003 Microchip Technology Inc.
ST = Schmitt Trigger input with CMOS levels
O = Output
CMOS = CMOS-compatible input
D = Digital
DS20091B-page 33
MCP18480
TABLE 3-1:
Pin Name
MCP18480 PIN DESCRIPTIONS (CONTINUED)
Pin
Number
SSOP
VREFOUT
6
Pin
Direction
Buffer
Type
O
A
Description
Reference output.
Internal reference output voltage (typically 2.5V). Usually tied back to
the VREFIN pin unless an external high-precision reference voltage is
desired.
VREFIN
7
I
A
Reference input.
This pin allows a high-precision reference voltage for the following
functions:
•
•
•
•
Undervoltage Comparator
Overvoltage Comparator
DRAIN Comparator
Current Limit Timer
If the precision of the VREFOUT output voltage is acceptable, tie the
VREFOUT pin to the VREFIN pin.
CL
8
I
A
Current Limit.
Input used to set the maximum current limit threshold allowed by the
system via a resistor divider network (with the resistor RCL1 between
the VREFIN pin and the CL pin and resistor RCL between the VNEG pin
and the CL pin). If the voltage across the sense resistor exceeds the
voltage on the CL pin, it implies that there is excessive current over the
allowed limit and forces the GATE pin to the VNEG pin voltage level
without delay.
ISET
9
I
A
Current source set.
Establishes the internal ISOURCE for the following:
• Undervoltage Delay
• Current Limit Timer
• GATE Pin Source Current
An external resistor RISET from the ISET pin must be connected to
either the VNEG pin or the VREFIN pin to set IBIAS, which will then establish the current sources throughout the device. The IBIAS current is the
same for either connection.
Connecting the RISET resistor to the VNEG pin will establish the
PWRGOOD pin output polarity to be active-high. Connecting the RISET
resistor to the VREFIN pin will establish the PWRGOOD pin output
polarity to be active-low.
Legend: TTL = TTL compatible input
I = Input
P = Power
A = Analog
DS20091B-page 34
ST = Schmitt Trigger input with CMOS levels
O = Output
CMOS = CMOS-compatible input
D = Digital
 2003 Microchip Technology Inc.
MCP18480
TABLE 3-1:
Pin Name
MCP18480 PIN DESCRIPTIONS (CONTINUED)
Pin
Number
SSOP
TIMER
Pin
Direction
Buffer
Type
I
A
10
Description
Current Limit Timer.
The value of the external capacitor (C TIMER) connected to the TIMER
pin sets the two time periods used during a current-limit event. These
are:
• The time that the GATE pin will limit the current through the
external FET
• The time that the GATE pin will disable the external FET
During current limit, a pull-up current source charges up the external
capacitor. Until the voltage on the TIMER pin reaches VREFIN/2, the
GATE pin is driven to maintain a reduced current flow determined by
the VDS of the external FET.
While the capacitor is being discharged by the pull-down current (pullup current is off), the GATE pin is at VNEG and the PWRGOOD pin is
deasserted. When the TIMER voltage falls below approximately
100 mV, the GATE pin turns on, if the RESTART pin is low, to reset the
internal fault latch. If the RESTART pin is high, the GATE pin remains
off until the ENABLE pin is forced low. It is then forced high or the
RESTART pin is forced low (asserted).
The PWRGOOD pin reasserts after the voltages on the DRAIN TH and
GATE pins meet the appropriate conditions.
The TIMER pin pull-up current is proportioned to the IISET current
(approximately a multiple of 16).
VNEG
11
I
P
Negative supply input.
The negative voltage applied to the board by the backplane (typically
the most negative voltage in the system).
RDISCH
12
I
A
External MOSFET activation delay.
An external resistor (RRDISCH) is connected between the RDISCH pin
and the VNEG pin and is used to set the delay between the deactivation
and activation of the external pass MOSFET during a current-limit
event. The delay is set by the values of the external capacitor (CTIMER)
and the external resistor (RRDISCH). The formulas are:
TDEACT = (CTIMER x R ISET) / 16
TACT = (9.2 x R RDISCH x CTIMER)
Legend: TTL = TTL compatible input
I = Input
P = Power
A = Analog
 2003 Microchip Technology Inc.
ST = Schmitt Trigger input with CMOS levels
O = Output
CMOS = CMOS-compatible input
D = Digital
DS20091B-page 35
MCP18480
TABLE 3-1:
Pin Name
MCP18480 PIN DESCRIPTIONS (CONTINUED)
Pin
Number
SSOP
SENSE
13
Pin
Direction
Buffer
Type
I
A
Description
Over-current sense.
The voltage on the SENSE input pin is used to detect over-current conditions in the load connected to the external MOSFET. This pin is
directly connected to the source of the MOSFET, with an external
resistor (RSENSE) (typically a low resistance) connected between the
source of the MOSFET and VNEG.
GATE
14
O
A
MOSFET gate driver.
The GATE output pin attaches to the gate of the external MOSFET.
The voltage on the GATE pin is pulled to the voltage on the VNEG pin
whenever the voltage on the UVTH pin is less than the voltage on the
VREFIN pin, or the voltage on the OVTH pin is greater than the voltage
on the VREFIN pin.
The GATE pin is also pulled to the voltage on the VNEG pin when the
ENABLE input pin is low.
When current limit is reached, the voltage on the GATE pin is adjusted
to maintain a constant voltage across the RSENSE resistor while the
CTIMER capacitor starts to charge. When the voltage on CTIMER
exceeds VREFIN/2, the GATE pin is pulled to VNEG to turn off the external MOSFET. A RC network can be added from the GATE pin to the
drain of the external MOSFET, along with a capacitor from the GATE
pin to the VNEG pin, to control the slew rate of the GATE pin.
VFB
15
I
A
The GATE pin pull-up current is proportioned to the IISET current.
External MOSFET drain monitor.
The VFB input pin monitors the voltage at the drain of the external
power MOSFET switch with respect to the voltage on the VNEG pin for
use by the internal foldback circuitry. An external resistor divider network (R FB1 and RFB2) is attached between the drain of this external
MOSFET and the VNEG pin (RFB1 is connected between the drain of
the external MOSFET and the VFB pin, while RFB2 is connected
between the V FB pin and the VNEG pin). This prevents high-voltage
breakdown of the VFB input.
DRAINTH
16
I
A
MOSFET drain comparator threshold.
This pin is used during the power-up sequence of the inserted board,
and after any fault condition that ‘turns off’ the GATE pin drive. The
voltage on the pin indicates when the external FET is fully enhanced
by comparing the pin voltage to an internal reference voltage
(approximately 100 mV derived from the internal band gap reference).
An external resistor divider network (RDRAIN1 and RDRAIN2) is attached
between the drain of this external MOSFET and the VNEG pin (RDRAIN1
is connected between the drain of the external MOSFET and the
DRAINTH pin while RDRAIN2 is connected between the DRAINTH pin
and the VNEG pin).
Legend: TTL = TTL compatible input
I = Input
P = Power
A = Analog
DS20091B-page 36
ST = Schmitt Trigger input with CMOS levels
O = Output
CMOS = CMOS-compatible input
D = Digital
 2003 Microchip Technology Inc.
MCP18480
TABLE 3-1:
Pin Name
MCP18480 PIN DESCRIPTIONS (CONTINUED)
Pin
Number
SSOP
OVO
Pin
Direction
Buffer
Type
I
A
17
Description
Overvoltage detect.
Typically for normal operation. This pin is tied to V NEG.
This feature allows the overvoltage detection input to monitor an overvoltage condition across the power module. The voltage is sensed at
the drain of the external MOSFET. The voltage across the load is internally determined based upon:
• The voltage difference between system ground and the voltage
on the VNEG pin
• The voltage difference between the drain of the external FET and
the voltage on the VNEG pin
An external resistor divider network (R OVO1 and ROVO2) is attached
between the drain of the external MOSFET and the VNEG pin (ROVO1
is connected between the drain of the external MOSFET and the OVO
pin, while ROVO2 is connected between the OVO pin and the VNEG
pin).
When the voltage across the external MOSFET (source-to-drain)
equals system ground voltage (- VNEG +), the maximum desired load
voltage, the GATE pin is forced to the voltage on the VNEG pin
(disabling the external MOSFET).
To detect Overvoltage on the board (instead of the load) directly,
connect the OVO pin to the VNEG pin.
PWRGOOD
18
O
D
Power Good indicator.
This state of the output is determined by four conditions. These are:
•
•
•
•
Undervoltage
Overvoltage
Current Limit
External FET is fully-enhanced (from DRAINTH pin on power-up)
PWRGOOD is a CMOS logic voltage (VNEG or VNEG+12V).
PWRGOOD is active when the device has completed power-up and
the system is neither in an Undervoltage or Overvoltage condition.
Connecting the RISET pin to the VNEG pin configures the PWRGOOD
pin to be active high. Connecting the RISET pin to the VREF pin configures the PWRGOOD pin to be active low.
ENABLE
19
I
TTL
Enable Gate driver.
Used to enable the GATE pin and assert the PWRGOOD pin. The
ENABLE pin is active-high and is internally pulled up to 5V. This pin is
pulled low by the user to clear the current limit latch when a currentlimit fault occurs with RESTART high, or to disable the GATE pin.
H = Enable the GATE and PWRGOOD pins.
L = Disables the GATE pin, deasserts the PWRGOOD pin and clears
current limit latch.
When the ENABLE pin is high, fault conditions will disable the GATE
pin and deasserts the PWRGOOD pin.
Legend: TTL = TTL compatible input
I = Input
P = Power
A = Analog
 2003 Microchip Technology Inc.
ST = Schmitt Trigger input with CMOS levels
O = Output
CMOS = CMOS-compatible input
D = Digital
DS20091B-page 37
MCP18480
TABLE 3-1:
Pin Name
MCP18480 PIN DESCRIPTIONS (CONTINUED)
Pin
Number
SSOP
RESTART
20
Pin
Direction
Buffer
Type
I
TTL
Description
Auto-restart enable.
Enables the auto-restart feature of the device after an over-current
fault.
L = The internal fault latch is reset and the device attempts to restart
with a frequency determined by the values of the external components
CTIMER and RDISCH.
H = The auto-restart is disabled, allowing the GATE pin to remain at
the VNEG pin voltage after an over-current fault. Internally pulled down
to the VNEG pin voltage.
Legend: TTL = TTL compatible input
I = Input
P = Power
A = Analog
DS20091B-page 38
ST = Schmitt Trigger input with CMOS levels
O = Output
CMOS = CMOS-compatible input
D = Digital
 2003 Microchip Technology Inc.
MCP18480
4.0
APPLICATIONS INFORMATION
For active-high DC/DC converter modules, the
MCP18480 should be programmed for a low active
PWRGOOD output. Connecting RISET to the VREFIN
pin will enable an active-low PWRGOOD output. Refer
to Figure 4-1 and Figure 4-2 for schematics.
The MCP18480 can be programmed to have the PWRGOOD signal be either active-high or active-low via the
ISET pin and the connection of the external RISET resistor (see Section 6.8.8, “Bias Block”). If the RISET resistor is connected between ISET and VNEG, the
PWRGOOD output pin is an active-high signal. If the
RISET resistor is connected between ISET and VREFIN,
the PWRGOOD output pin is an active-low signal.
Figure 4-1 shows a typical telecom application circuit
where the DC/DC module is active-high. Figure 4-2
shows a typical telecom application circuit where the
DC/DC module is active-low. The polarity of the
MCP18480’s PWRGOOD pin (active-high or activelow) is dependant on the state of the ISET pin.
For systems using an active-low-enabled DC/DC converter module, the MCP18480 should be programmed
for a high-active PWRGOOD output. Tying the RISET
resistor to the VNEG pin configures the PWRGOOD to
be an active-high signal. The active-high PWRGOOD
switches on the external NPN and the collector of the
external NPN (labeled as GOODPWR) is pulled to
VNEG, enabling a low-active GOODPWR and resulting
in enabling the DC/DC module.
GND
RBYPL
51 kΩ
RZ
4 kΩ
ROV1
1.74 MΩ
CBYP1 +
2 µF
CBYP2
10 nF
RPOS
78V
Transorb
ROV2
59 kΩ
453 kΩ
RUV2
5V
RUVHYS
280 kΩ
30.9 kΩ
CUVD
800 nF
RISET
1
VPOS
RESTART 20
2
OVTH
ENABLE 19
3
UVTH
PWRGOOD 18
4
UVHYS
5
UVD
6
VREFOUT
7
VREFIN
8
CL
SENSE 13
9
ISET
RDISCH 12
Fuse 10A
Ctimer
680 nF
OVO 17
SEN
RPG1
RPG3
680Ω
RPG4
36 kΩ
110 kΩ
QPG2
2N5400 GOODPWR
QPG1
MPSA43
RPG5
36 kΩ
QPG3
NTE261
RPG6
DRAINTH 16
10 TIMER
124 kΩ
VNEG
SRS
24.9 kΩ
RUV1
CBYPL
100 µF
100 V
VIN+ VOUT+
DC/DC
Converter
Module
ON/OFF
VIN- VOUT-
1500Ω
VFB 15
GATE 14
VNEG 11
MCP18480
RDISCH
1.6 MΩ
RGD
RPG2
7.5 kΩ
RSENSE
0.01Ω
18 kΩ
CG1
RG1
100 nF 10Ω
CGD
3.3 nF
M1
NTE2388
RFB2
124 kΩ
RDRAIN2
115 kΩ
RFB1
1.74 MΩ
RDRAIN1
1.6 MΩ
FIGURE 4-1:
Typical Operating Circuit for Telecom Applications with Active-High power Module foldback current limit enabled.
 2003 Microchip Technology Inc.
DS20091B-page 39
MCP18480
GND
RBYPL
51 kΩ
RZ
RPOS
ROV1
4 kΩ
1.74 MΩ
CBYP1 +
2 µF
CBYP2
10 nF
78V
Transorb
ROV2
59 kΩ
453 kΩ
5V
RUVHYS
RUV2
30.9 kΩ
280 kΩ
CUVD
800 nF
RISET
VPOS
2
OV TH
ENABLE 19
3
UVTH
PWRGOOD 18
4
UVHYS
5
UVD
6
VREFOUT
7
VREFIN
8
CL
SENSE 13
9
ISET
RDISCH 12
124 kΩ
VNEG
Fuse 10A
RESTART 20
1
Ctimer
680 nF
DC/DC
Converter
Module
OVO 17
SEN
RPG1
110 kΩ
RPG3
680Ω
RPG4
QPG2
2N5400 GOODPWR
36 kΩ Q
PG1
MPSA43
RPG5
36 kΩ
QPG3
NTE261
RPG6
DRAINTH 16
10 TIMER
VIN+ VOUT+
SRS
24.9 kΩ
RUV1
CBYPL
100 µF
100 V
ON/OFF
VIN- VOUT-
1500Ω
VFB 15
GATE 14
VNEG 11
MCP18480
RDISCH
1.6 MΩ
RGD
18 kΩ
RPG2
7.5 kΩ
RSENSE
0.01Ω
CG1
R G1
100 nF 10Ω
CGD
3.3 nF
M1
NTE2388
RFB2
124 kΩ
RDRAIN2
115 kΩ
RFB1
1.74 MΩ
RDRAIN1
1.6 MΩ
FIGURE 4-2:
Typical operating circuit for telecom applications with Active-Low power Module foldback current limit enabled.
DS20091B-page 40
 2003 Microchip Technology Inc.
MCP18480
The MCP18480 can typically be implemented in a
backplane system in one of two methods. Figure 4-3
shows a system where the backplane integrates the
MCP18480 for every slot. Figure 4-4 shows a system
where the backplane does not integrate the
MCP18480s and each card that will be inserted into
any slot is required to integrate the MCP18480.
Card
#n
Card
#2
Card
#1
MCP18480
MCP18480
MCP18480
FIGURE 4-3:
Backplane System Block Diagram #1.
Card # n
MCP18480
Card # 2
Card # 1
MCP18480
MCP18480
FIGURE 4-4:
Backplane System Block Diagram #2.
 2003 Microchip Technology Inc.
DS20091B-page 41
MCP18480
NOTES:
DS20091B-page 42
 2003 Microchip Technology Inc.
MCP18480
5.0
POWER-UP
5.1
VPOS
and VNEG Connection
6.0
INTERNAL SIGNAL
DESCRIPTIONS
For proper system operation, it is required that the system ground and the VNEG pin have a solid connection
before voltages are applied to any logic on the board.
The figure on page 2 illustrates a block diagram of the
MCP18480. Between the functional blocks, there are
some signals that have been named. These signals are
briefly explained in Section 6.1 thru Section 6.7.
5.2
6.1
The Board Circuitry
After the MCP18480 has “good” voltages on the VPOS
and VNEG pins, the board may have voltages applied to
any of the other signals (a “good” voltage on VPOS indicates a “good” voltage on the system ground). The
MCP18480 will start to source a small current to the
external MOSFET to begin powering the board. This
will turn on the MOSFET starting to power the external
circuitry (load) of the board. The current from the GATE
pin (into the external MOSFET) increases as the VDS of
the MOSFET decreases. When the VDS of the MOSFET is below the voltage determined by the two resistors on the DRAINTH pin (RDRAIN1 and RDRAIN2), and
the voltage on the GATE pin is greater than 8V, the
PWRGOOD pin is active.
Undervoltage Active
A signal that indicates (when low) that System Ground
- VNEG is less then the minimum voltage.
6.2
Overvoltage Active
A signal that indicates (when low) that System Ground
-VNEG is greater then the maximum voltage.
6.3
LATCHOFF
A signal that controls the GATE pin due to a timeout of
the current-limiting timer.
6.4
Current Limit TIMER
A signal that controls the reduction of source current on
the GATE pin and starts the voltage ramp of the current
limit timer.
6.5
Current Limit Feedback
A voltage that is proportional to the VDS of the external
MOSFET to set a trip point for current-limiting.
6.6
TIMEOUT
A signal that indicates the completion of the foldback
time and is used to start the latchoff time.
6.7
Circuit Breaker
A signal that immediately causes the GATE pin output
to be driven to VNEG upon the detection of excessive
current in the external FET.
 2003 Microchip Technology Inc.
DS20091B-page 43
MCP18480
6.8
DESCRIPTION OF INTERNAL
BLOCKS
The internal blocks shown in the MCP18480 Block Diagram on page 2 are discussed in Section 6.8.1 through
Section 6.8.8.
Note:
6.8.1
Voltage levels discussed are with respect
to external component values selected in
Figure 4-1.
UV (UNDERVOLTAGE) BLOCK
The Undervoltage lockout circuit monitors the input
voltage by comparing a centertap voltage on an external resistor divider to a 2.5V reference. The centertap
voltage is fed into the UVTH input pin.
If the voltage on the UV TH pin is below the internal 2.5V
reference, the absolute magnitude of the supply voltage is too low for proper system operation, resulting in
the external MOSFET being turned off. If the voltage on
the UVTH pin is greater than VNEG + 2.5V, the supply
voltage is above the minimal operating voltage as set
by the external resistor divider network.
In telecom network applications, it is common to shut
down the DC/DC converter supply when the input voltage falls below -38.5V (tolerance of ±1.0V) for greater
than 100 ms. The system will not restart until the voltage exceeds -43.0V (tolerance of ±0.5V). This voltage
difference is produced by an open-drain NMOS output
(the UVHYS pin) that connects an external resistor in
parallel with the lower of the two resistors in the external UV divider network until the supply ramps down to
-43V. When the UVTH pin exceeds VNEG + 2.5V, the
internal NMOS transistor is turned off, disconnecting
the external resistor connected to the UV HYS pin. The
voltage at the UVTH pin increases to 2.79V. The supply
voltage would have to decrease to -38.5V in order to
assert the internal “Undervoltage Active” signal.
If the supply voltage dips below the programmed
threshold, the input comparator trips the other way. The
timing capacitor is released to ramp-up at the previously described rate and the Undervoltage block
switches when the capacitor voltage reaches 1.25V.
When the input comparator goes to a low level, the hysteresis FET is turned on and the trip point for
reassertion of good VNEG reverts to -43V.
While the Undervoltage Active signal is low (includes
Undervoltage input filter), the GATE pin driver for the
external MOSFET is disabled, the GATE pin is pulled to
the voltage of the VNEG pin with a 60 mA current sink
and the PWRGOOD output pin is deasserted to indicate that the input voltage is out of range.
EQUATION 6-2:
UNDERVOLTAGE
HYSTERESIS
R U V1
R UVHYS = ---------------------------------------------------R UV1
V
U VD  ----------- -----------------–1
- –
V
R UV2
REFIN
EQUATION 6-3:
UNDERVOLTAGE
CONDITION
V NEG • R UV2
V REFIN > -----------------------------------( R U V1 + R U V2 )
An internal 10 µA current source and an external
capacitor connected to the UV D pin adjusts the delay
between the input fault and the notification of this fault
to the system. This is usually 100 ms for -48V telecomtype equipment. For customized adjustments, the time
delay can be expressed as Equation 6-1.
EQUATION 6-1:
T D ELAY
INPUT FAULT DELAY
REFIN
V
----------------- • C U VD
 2 
= -------------------------------------------10µA
CUV is the capacitor connected between the UVD pin
and the VNEG pin. A value of 1 µF would provide a
delay of about 100 ms.
DS20091B-page 44
 2003 Microchip Technology Inc.
MCP18480
6.8.2
OV (OVERVOLTAGE) BLOCK
The overvoltage block behaves similarly to the undervoltage block in that it monitors an input voltage by
comparing a centertap voltage on an external voltage
divider (on the OVTH pin) to the V REFIN pin voltage.
If the centertap voltage is below the reference, the input
voltage is not excessive. If the centertap voltage is
greater than the VNEG + VREFIN pin voltages, the supply voltage is higher than the programmed acceptable
maximum voltage limit. An internal flag is then activated to inform the MCP18480 that the input voltage
has exceeded the preset limit.
The “Overvoltage Active” signal deasserts when the
input voltage drops back below the threshold
determined by the external resistors (ROV1 and ROV2).
EQUATION 6-4:
OVERVOLTAGE VOLTAGE
CONDITION
V NEG • R OV2
V REFIN < -----------------------------------( R OV1 + R OV2 )
 2003 Microchip Technology Inc.
6.8.3
FET-GOOD BLOCK
The FET-good block monitors the voltage between the
drain of the external MOSFET and on the VNEG pin at
power-up. It delays assertion of PWRGOOD until the
drain-to-source voltage of the external FET is acceptably low and the voltage at the GATE pin is about 8V.
The comparator operation is similar to Undervoltage
and Overvoltage blocks.
To prevent applying excessive voltages to the gates of
the FETs in the Undervoltage circuit, a resistive voltage
divider is employed between ground and the VNEG pin.
Similarly, the drain of the external MOSFET can be
exposed to voltages at around VNEG during normal
operation and as high as ground (typically 48V above
VNEG).
The FET good block also monitors the GATE pin. When
the GATE pin becomes >VNEG +8V and the DRAINTH
pin is within its programmed range, the output of the
FET good block is active.
The internal FET good signal goes high and remains
active until a fault condition (Undervoltage, Overvoltage or Current Limit) is detected. Any of these conditions hold the PWRGOOD signal deasserted until the
fault condition is removed and the external FET gate
and drain voltages are acceptable.
DS20091B-page 45
MCP18480
6.8.4
CURRENT LIMIT BLOCK
6.8.5
An excessive current flowing through the external FET
is sensed as a voltage across an external resistor
connected between the FET’s source and VNEG.
The drain voltage is sensed with a resistor divider network, as shown in Figure 4-1 and Figure 4-2. The voltage tap is applied to a circuit whose output is 50 mV
above VNEG when the drain of the external FET is at
VNEG. The output is 12 mV when the V FB pin is
≥ VNEG +0.5V. This output voltage is the Current Limit
Feedback (CLFB) signal to the gate driver block for use
in the fold-back current-limiting.
The CLFB voltage serves as the reference for a comparator whose other input monitors the voltage across
the current limit sense resistor in series with the source
of the external FET. When the SENSE pin exceeds the
voltage on CLFB, a comparator output goes high to
start the timer (see Section 6.8.5). The VDS dependent
threshold for the current limit helps keep the FET within
its safe operating area.
Another comparator in the current-limiting block
watches the SENSE pin for potentially catastrophic
over-current conditions, which require immediate termination of conduction in the pass MOSFET. The output of this comparator trips a comparator used in the
TIMER block to skip the first part of the timeout cycle
and go straight to the “off” period. In some cases, the
user may want to program the system to shut off immediately if there is a short-circuit condition that exceeds
a desired level. To use this feature, connect a divider
between the VREFIN pin and the VNEG pin, with its centertap at the CL input pin. The circuit breaker current
that would trigger this mode is given by Equation 6-5.
EQUATION 6-5:
I CAT
CIRCUIT BREAKER
THRESHOLD
TIMER PIN CURRENT
CALCULATIONS
I TIMER = 16 • IRISET
Typical
I TIMER = 10 • IRISET
Minimum
I TIMER = 20 • IRISET
Maximum
Legend: IRISET is the current through the external
EQUATION 6-8:
OVER-CURRENT FAULT
DELAY
C TIMER
T CLD 1 = ------------------ • 1.25
ITIMER
EQUATION 6-9:
12 mV
VSENSE
50 mV
V DS × R FB2
= 0.76 ×  0.05V – ------------------------------- + 0.012V

R FB1 + R FB2
for VFB > 0.5V, VSENSE = 0.012V
DS20091B-page 46
EQUATION 6-7:
The time required to reset the timer and reactivate the
gate driver is given by Equation 6-9.
> 0.5V
0V
V SENSE
Equation 6-7 shows the equations used to calculate the
current at the TIMER pin. This current is used for other
calculations.
CL PIN CURRENT
VFB
I CL
When the FET is off, the current through it drops to
zero, so that the voltage across the current sense resistor also goes to zero and the current limit signal to the
timer block goes away. The timer capacitor starts to
discharge at a rate set by the external resistor, RDISCH.
The delay between the inception of the over-current
condition and the deactivation of the FET is given by
Equation 6-8.
If this function is not needed in a particular application,
it can be disabled by connecting the CL pin to the
VREFIN pin. Equation 6-6 shows the current of the CL
pin during current-limiting.
V SENSE
= -----------------R SENSE
Since the external FET can survive brief over-current
episodes, it is unnecessary to turn off the FET instantly
when the current rises too high (see external FET data
sheet). The timer circuit uses the output of the comparator in the current-limiting block to begin charging an
external capacitor with 16 • IRISET (typically 160 µA)
when an over-current condition is detected. When the
voltage on the capacitor ramps up to 1.25V, a comparator output goes high. This output goes to another
block that tells the gate driver to turn the external FET
off and deassert the PWRGOOD pin. The complementary output of the timer changes the state of a hysteresis circuit that drops the reference input of the
comparator to VNEG + 100 mV (± 10 mV).
RISET resistor
V REFIN 
 ------------------------------• R CL2
R

CL1 + R CL2
------------------------------------------------------=
R SENSE
EQUATION 6-6:
TIMER BLOCK
OVER-CURRENT
REACTIVATION DELAY
T CLD2 = 9.2 • C TIMER • R DISCH
As described above, the timer circuit operates as a
free-running, multi-vibrator, if RESTART is low.
 2003 Microchip Technology Inc.
MCP18480
6.8.6
LATCH BLOCK
A current limit latch circuit determines whether, following the timeout period resulting from an over-current
condition, the external FET should be latched-off until
reactivated by an external signal, or be allowed to
restart automatically following the timer cycle.
If the RESTART input is low, the part will restart and the
gate drive to the external MOSFET will be restored
automatically. If the RESTART pin is high, a current
limit event will turn the FET off after the programmed
delay and maintain an off condition until the ENABLE
pin or RESTART pin is pulled low momentarily.
6.8.7
GATE DRIVE BLOCK
The GATE drive block sources a current equal to the
voltage at CLFB divided by 1 kΩ to the gate of the
external MOSFET. So the current sourced from the
GATE pin is determined by the VDS of the external FET.
This current, and the external capacitors around the
FET, control the slew rate of the drain of the external
FET, limiting the current that would otherwise have to
be diverted from other boards on the backplane. In the
event of a problem (Overvoltage, Undervoltage or current limit), the gate of the external FET is pulled down
with 60 mA. During normal operation, the GATE pin
ramps up to about 12V, sending the external FET
deeply into the triode region. If the drain current
becomes excessive while the drain-to-source voltage
is high, the inverting input of the op amp is driven to the
CLFB voltage by the current-limiting block, causing a
reduction in the drive to the external FET to reduce the
current through it. This foldback current-limit remains
active until the voltage on CTIMER reaches VREFIN/2,
after which the GATE output pin is pulled to VNEG for
the duration of the timeout period, or until ENABLE is
cycled low momentarily.
For applications in which it is undesirable to have the
drain current track the VDS of the external pass FET in
current limit, the user can tie the VFB pin to the VREF or
VNEG pin. This will make the MCP18480 try to force the
drain current to 12 mV/R SENSE or 50 mV/R SENSE,
respectively, until the TIMER block times out. If foldback current-limiting is not desired at all, set the divider
associated with the CL pin to detect the desired current
in order to shut off the GATE immediately.
6.8.8
BIAS BLOCK
The internal voltage generation or bias block generates
the biasing currents for all internal blocks. It also provides a 2.5V reference voltage that is brought out to the
VREFOUT pin. This output pin is usually fed back into the
VREFIN pin. However, an externally-generated 2.5V
reference voltage may be directly connected to the
VREFIN pin, while leaving the VREFOUT pin unconnected. A VREFIN/2 voltage is generated within the bias
block, which is used as reference in the other blocks.
A internal shunt regulator limits the internal circuitry to
12V. An external current-limiting resistor in series with
VPOS absorbs the excess voltage. The resulting regulated 12V source is used in the gate drive block and
PWRGOOD output circuit.
The 12V source is also stepped-down to generate a 5V
regulated source. Most of the other circuitry and blocks
operate with the internally-generated 5V.
EQUATION 6-10:
EXTERNAL RISET
CURRENT
I RISET
Note:
6.8.9
REFIN
V
---------------- 2 
= ± -----------------------R ISET
The direction of the current is dependant on where the external RISET resistor is connected (the ISET pin to either
the VNEG pin or the VREFIN pin).
POWER GOOD BLOCK
The “power good” block monitors the state of the OV
active, the UV active, the current limit circuitry, and output of the FET good block to generate the PWRGOOD
output signal.
A voltage on the GATE pin higher than about 8V is one
condition for the PWRGOOD pin to be asserted. Any
fault condition that causes the GATE pin voltage to be
pulled to VNEG deasserts the PWRGOOD pin. On
startup, a NMOS transistor with a resistor pulling its
gate up holds the GATE pin down until the MCP18480
is properly biased.
 2003 Microchip Technology Inc.
DS20091B-page 47
MCP18480
NOTES:
DS20091B-page 48
 2003 Microchip Technology Inc.
MCP18480
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
20-Lead SSOP
Example:
MCP18480
I/SS
XXXXXXXXXXX
XXXXXXXXXXX
0348058
YYWWNNN
Legend:
Note:
*
XX...X
YY
WW
NNN
Customer specific information*
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
Standard marking consists of Microchip part number, year code, week code, and traceability code.
 2003 Microchip Technology Inc.
DS20091B-page 49
MCP18480
20-Lead Plastic Shrink Small Outline (SS) – 209 mil, 5.30 mm (SSOP)
E
E1
p
D
B
2
1
n
α
c
A2
A
φ
L
A1
β
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Foot Length
Lead Thickness
Foot Angle
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
A
A2
A1
E
E1
D
L
c
φ
B
α
β
MIN
.068
.064
.002
.299
.201
.278
.022
.004
0
.010
0
0
INCHES*
NOM
20
.026
.073
.068
.006
.309
.207
.284
.030
.007
4
.013
5
5
MAX
.078
.072
.010
.322
.212
.289
.037
.010
8
.015
10
10
MILLIMETERS
NOM
20
0.65
1.73
1.85
1.63
1.73
0.05
0.15
7.59
7.85
5.11
5.25
7.06
7.20
0.56
0.75
0.10
0.18
0.00
101.60
0.25
0.32
0
5
0
5
MIN
MAX
1.98
1.83
0.25
8.18
5.38
7.34
0.94
0.25
203.20
0.38
10
10
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MO-150
Drawing No. C04-072
DS20091B-page 50
 2003 Microchip Technology Inc.
MCP18480
APPENDIX A:
REVISION HISTORY
Revision A
This is a new data sheet
Revision B
• Add device characterization information
• Enhanced functional description
 2003 Microchip Technology Inc.
DS20091B-page 51
MCP18480
NOTES:
DS20091B-page 52
 2003 Microchip Technology Inc.
MCP18480
APPENDIX B:
MCP18480 SCHEMATICS
This appendix contains the schematics for the MCP18480 Evaluation Board.
 2003 Microchip Technology Inc.
DS20091B-page 53
DS20091B-page 54
FIGURE B-1:
VNEG
RISET
124 kΩ
RUVHYS
RUV2
280 kΩ
30.9 kΩ
CUVD
800 nF
RUV1
453 kΩ
OVTH
UVTH
UVHYS
UVD
VREFOUT
VREFIN
CL
2
3
4
5
6
7
8
CTIMER
680 nF
9 ISET
10 TIMER
VPOS
1
GATE 14
SENSE 13
RDISCH 12
VNEG 11
OVO 17
DRAIN TH 16
VFB 15
RESTART 20
ENABLE 19
PWRGOOD 18
MCP18480
24.9 kΩ
RZ
SEN
RDISCH
1.6 MΩ
110 kΩ
R PG1
SRS
RPG2
7.5 kΩ
RSENSE
0.01Ω
RFB1
1.74 MΩ
RDRAIN1
1.6 MΩ
ROVO1
1.74 MΩ
RDRAIN2
115 kΩ
ROVO2
59 kΩ
ON/OFF
VIN- VOUT-
DC/DC
Converter
Module
VIN+ VOUT+
RFB2
124 kΩ
M1
NTE2388
RGD
18 kΩ
QPG3
NTE261
CGD
3.3 nF
RPG6
1500Ω
RPG5
36 kΩ
QPG2
2N5400
CG1
RG1
100 nF 10Ω
R
5V PG3
680Ω
RPG4
36 kΩ Q
PG1
MPSA43
RBYPL
51 kΩ
CBYPL
100 µF
100 V
Typical Operating Circuit for Telcom Applications with Active-High Power Module - Foldback Current Limit Enabled.
Fuse 10A
78V
Transorb
ROV2
59 kΩ
CBYP2
10 nF
ROV1
RPOS
4 kΩ 1.74 MΩ
CBYP1 +
2 µF
GND
MCP18480
 2003 Microchip Technology Inc.
 2003 Microchip Technology Inc.
FIGURE B-2:
VNEGA 1
R ISET
124 kΩ
RUVHYS
RUV2
280 kΩ
30.9 kΩ
CUVD
800 nF
RUV1
453 kΩ
OVTH
UVTH
UVHYS
UVD
VREFOUT
VREFIN
CL
2
3
4
5
6
7
8
CTIMER
680 nF
9 ISET
10 TIMER
VPOS
1
GATE 14
SENSE 13
RDISCH 12
VNEG 11
OVO 17
DRAIN TH 16
VFB 15
RESTART 20
ENABLE 19
PWRGOOD 18
MCP18480
24.9 kΩ
RZ
SEN
RDISCH
1.6 MΩ
110 kΩ
R PG1
SRS
RPG2
7.5 kΩ
RSENSE
0.01Ω
ROVO1
1.74 MΩ
RDRAIN1
1.6 MΩ
RDRAIN2
115 kΩ
ROVO2
59 kΩ
RFB1
1.74 MΩ
CGD
3.3 nF
ON/OFF
VIN- VOUT-
DC/DC
Converter
Module
VIN+ VOUT+
RFB2
124 kΩ
M1
NTE2388
QPG3
NTE261
RGD
18 kΩ
RPG6
1500Ω
RPG5
36 kΩ
QPG2
2N5400
CG1
RG1
100 nF 10Ω
R
5V PG3
680Ω
RPG4
36 kΩ Q
PG1
MPSA43
RBYPL
51 kΩ
CBYPL
100 µF
100 V
Typical Operating Circuit for Telcom Applications with Active-Low Power Module - Foldback Current Limit Enabled.
Fuse 10A
78V
Transorb
ROV2
59 kΩ
CBYP2
10 nF
ROV1
RPOS
4 kΩ 1.74 MΩ
CBYP1 +
2 µF
GND
MCP18480
DS20091B-page 55
DS20091B-page 56
CUVD
800 nF
RUV2
30.9 kΩ
RUV1
453 kΩ
VPOS
OVTH
UVTH
UVHYS
UVD
VREFOUT
VREFIN
CL
ISET
10 TIMER
RISET
124 kΩ C
TIMER
680 nF
280 kΩ
RUVHYS
1
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
VNEG 11
RESTART
ENABLE
PWRGOOD
OVO
DRAIN TH
VFB
GATE
SENS
RDISCH
MCP18480
SEN
RDISCH
1.6 MΩ
RPG1
110 kΩ
SRS
CGD
3.3 nF
RGD
18 kΩ
RPG6
1500Ω
RPG5
36 kΩ
Q PG2
2N5400
RBYPL
51 kΩ
RDRAIN1
1.6 MΩ
ROVO1
1.74 MΩ
ROVO2
59 kΩ
RFB1
1.74 MΩ
QPG3
NTE261
CBYPL RLOAD
100 µF 75Ω
RDRAIN2
115 kΩ
R FB2
124 kΩ
M1
NTE2388
C G1
RG1
100 nF 10Ω
RPG3
680Ω
RPG4
36 kΩ Q
PG1
MPSA43
RPG2
7.5 kΩ
RSENSE
0.01Ω
5V
Evaluation Board Schematic (Active-Low Power Module - Foldback Current Limit Enabled).
ROV2
59 kΩ
CBYP2
10 nF
ROV1
1.74 MΩ
FIGURE B-3:
VNEG
CBYP1 +
2 µF
RPOS
4 kΩ
RZ 24.9 kΩ
MCP18480
 2003 Microchip Technology Inc.
 2003 Microchip Technology Inc.
CUVD
800 nF
RUV2
30.9 kΩ
RUV1
453 kΩ
RISET
124 kΩ
280 kΩ
RUVHYS
VPOS
OVTH
UVTH
UVHYS
UVD
VREFOUT
VREFIN
CL
ISET
TIMER
CTIMER
680 nF
1
2
3
4
5
6
7
8
9
10
RESTART
ENABLE
PWRGOOD
OVO
DRAINTH
VFB
GATE
SENS
RDISCH
VNEG
MCP18480
20
19
18
17
16
15
14
13
12
11
SEN
RDISCH
1.6 MΩ
RPG1
110 kΩ
SRS
ROVO2
59 kΩ
ROVO1
1.74 MΩ
RDRAIN1
1.6 MΩ
RDRAIN2
115 kΩ
Q PG3
NTE261
CBYPL RLOAD
100 µF 75Ω
RFB1
1.74 MΩ
CGD
3.3 nF
RGD
18 kΩ
RPG6
1500Ω
RPG5
36 kΩ
QPG2
2N5400
RBYPL
51 kΩ
RFB2
124 kΩ
M1
NTE2388
CG1
RG1
100 nF 10Ω
RPG3
680Ω
RPG4
36 kΩ Q
PG1
MPSA43
RPG2
7.5 kΩ
RSENSE
0.01Ω
5V
Evaluation Board Schematic (Active-High Power Module - Foldback Current Limit Enabled).
ROV2
59 kΩ
CBYP2
10 nF
ROV1
1.74 MΩ
FIGURE B-4:
VNEG
CBYP1 +
2 µF
RPOS
4 kΩ
RZ 24.9 kΩ
MCP18480
DS20091B-page 57
DS20091B-page 58
RCL2 (Note)
40.2 kΩ
RCL1 (Note)
210 kΩ
CUVD
800 nF
RUV2
30.9 kΩ
RUV1
453 kΩ
VPOS
OVTH
UVTH
UVHYS
UVD
VREFOUT
VREFIN
CL
ISET
10 TIMER
RISET
124 kΩ C
TIMER
680 nF
280 kΩ
RUVHYS
1
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
VNEG 11
RESTART
ENABLE
PWRGOOD
OVO
DRAIN TH
VFB
GATE
SENS
RDISCH
MCP18480
SEN
RDISCH
1.6 MΩ
RPG1
110 kΩ
SRS
ROVO1
1.74 MΩ
ROVO2
59 kΩ
QPG3
NTE261
CBYPL RLOAD
100 µF 75Ω
RDRAIN1
1.6 MΩ
CGD
3.3 nF
RGD
18 kΩ
RPG6
1500Ω
RPG5
36 kΩ
Q PG2
2N5400
RBYPL
51 kΩ
RDRAIN2
115 kΩ
M1
NTE2388
C G1
RG1
100 nF 10Ω
RPG3
680Ω
RPG4
36 kΩ Q
PG1
MPSA43
RPG2
7.5 kΩ
RSENSE
0.01Ω
5V
Evaluation Board Schematic (Active-Low Power Module - Circuit Breaker Current Limit Enabled).
ROV2
59 kΩ
CBYP2
10 nF
ROV1
1.74 MΩ
FIGURE B-5:
VNEG
CBYP1 +
2 µF
RPOS
4 kΩ
RZ 24.9 kΩ
MCP18480
 2003 Microchip Technology Inc.
 2003 Microchip Technology Inc.
280 kΩ
RUVHYS
RCL2 (Note) RISET
40.2 kΩ
124 kΩ
RCL1 (Note)
210 kΩ
CUVD
800 nF
RUV2
30.9 kΩ
RUV1
453 kΩ
VPOS
OVTH
UVTH
UVHYS
UVD
VREFOUT
VREFIN
CL
ISET
TIMER
CTIMER
680 nF
1
2
3
4
5
6
7
8
9
10
RESTART
ENABLE
PWRGOOD
OVO
DRAINTH
VFB
GATE
SENS
RDISCH
VNEG
MCP18480
20
19
18
17
16
15
14
13
12
11
SEN
RDISCH
1.6 MΩ
RPG1
110 kΩ
SRS
CGD
3.3 nF
RGD
18 kΩ
RPG6
1500Ω
RPG5
36 kΩ
QPG2
2N5400
RBYPL
51 kΩ
ROVO2
59 kΩ
RDRAIN2
115 kΩ
M1
NTE2388
CG1
RG1
100 nF 10Ω
RPG3
680Ω
RPG4
36 kΩ Q
PG1
MPSA43
RPG2
7.5 kΩ
RSENSE
0.01Ω
5V
Evaluation Board Schematic (Active-High Power Module - Circuit Breaker Current Limit Enabled).
ROV2
59 kΩ
CBYP2
10 nF
ROV1
1.74 MΩ
FIGURE B-6:
VNEG
CBYP1 +
2 µF
RPOS
4 kΩ
RZ 24.9 kΩ
ROVO1
1.74 MΩ
RDRAIN1
1.6 MΩ
Q PG3
NTE261
CBYPL RLOAD
100 µF 75Ω
MCP18480
DS20091B-page 59
MCP18480
NOTES:
DS20091B-page 60
 2003 Microchip Technology Inc.
MCP18480
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
/XX
Temperature
Range
Package
Device
MCP18480:
MCP18480T:
-48V Hot Swap Controller
-48V Hot Swap Controller
(Tape and Reel)
Temperature Range
I
Package
SS = Plastic SSOP (209 mil, Body), 20-lead
Examples:
a)
MCP18480-I/SS = Industrial Temp.,
SSOP package
b)
MCP18480T-I/SS = Tape and Reel,
Industrial Temp., SSOP package
= -40°C to +85°C
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2003 Microchip Technology Inc.
DS20091B-page 61
MCP18480
NOTES:
DS20091B-page 62
 2003 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such
acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications. No
representation or warranty is given and no liability is assumed
by Microchip Technology Incorporated with respect to the
accuracy or use of such information, or infringement of patents
or other intellectual property rights arising from such use or
otherwise. Use of Microchip’s products as critical components in
life support systems is not authorized except with express
written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, KEELOQ,
MPLAB, PIC, PICmicro, PICSTART, PRO MATE and
PowerSmart are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL
and The Embedded Control Solutions Company are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Accuron, Application Maestro, dsPIC, dsPICDEM,
dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM,
fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC,
microPort, Migratable Memory, MPASM, MPLIB, MPLINK,
MPSIM, PICC, PICkit, PICDEM, PICDEM.net, PowerCal,
PowerInfo, PowerMate, PowerTool, rfLAB, rfPIC, Select Mode,
SmartSensor, SmartShunt, SmartTel and Total Endurance are
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark of
Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2003, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro ® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
 2003 Microchip Technology Inc.
DS20091B - page 63
M
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
Corporate Office
Australia
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Microchip Technology Australia Pty Ltd
Marketing Support Division
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Atlanta
3780 Mansell Road, Suite 130
Alpharetta, GA 30022
Tel: 770-640-0034 Fax: 770-640-0307
China - Beijing
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
Chicago
China - Chengdu
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401-2402, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-86766200 Fax: 86-28-86766599
Boston
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
Phoenix
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-4338
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Hong Kong SAR
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1812, 18/F, Building A, United Plaza
No. 5022 Binhe Road, Futian District
Shenzhen 518033, China
Tel: 86-755-82901380 Fax: 86-755-82966626
China - Qingdao
Rm. B505A, Fullhope Plaza,
No. 12 Hong Kong Central Rd.
Qingdao 266071, China
Tel: 86-532-5027355 Fax: 86-532-5027205
India
Microchip Technology Inc.
India Liaison Office
Marketing Support Division
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology (Barbados) Inc.,
Taiwan Branch
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Austria
Microchip Technology Austria GmbH
Durisolstrasse 2
A-4600 Wels
Austria
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Steinheilstrasse 10
D-85737 Ismaning, Germany
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Via Quasimodo, 12
20025 Legnano (MI)
Milan, Italy
Tel: 39-0331-742611 Fax: 39-0331-466781
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
03/25/03
DS20091B-page 64
 2003 Microchip Technology Inc.