a FEATURES Space-Saving SOT-23, SOIC Packaging Wide Bandwidth: 8 MHz @ 5 V Low Offset Voltage: 1.2 mV Max Rail-to-Rail Output Swing 2.7 V/s Slew Rate Unity Gain Stable Single Supply Operation: +2.7 V to +12 V APPLICATIONS Portable Communications Microphone Amplifiers Portable Phones Sensor Interface Active Filters PCMCIA Cards ASIC Input Drivers Wearable Computers Battery Powered Devices Voltage Reference Buffers Personal Digital Assistants 8 MHz Rail-to-Rail Operational Amplifiers AD8519/AD8529 PIN CONFIGURATIONS 8-Lead SOIC (R Suffix) The small SOT-23 package makes it possible to place the AD8519 next to sensors, reducing external noise pickup. 8 NC 2IN A 2 7 V+ +IN A 3 6 OUT A 5 NC V2 4 NC = NO CONNECT 5-Lead SOT-23 (RT Suffix) AD8519 OUT A 1 5 V+ V2 2 4 2IN A +IN A 3 8-Lead SOIC (R Suffix) GENERAL DESCRIPTION The AD8519 and AD8529 are rail-to-rail output bipolar amplifiers with a unity gain bandwidth of 8 MHz and a typical voltage offset of less than 1 mV. The AD8519 brings precision and bandwidth to the SOT-23 package. The low supply current makes the AD8519/AD8529 ideal for battery powered applications. The rail-to-rail output swing of the AD8519/AD8529 is larger than standard video op amps, making them useful in applications that require greater dynamic range than standard video op amps. The +2.7 V/µs slew rate makes the AD8529/AD8549 a good match for driving ASIC inputs such as voice codecs. AD8519 NC 1 OUT A 1 8 V1 AD8529 2IN A 2 1IN A 3 TOP VIEW 7 OUT B 6 2IN B 5 1IN B V2 4 8-Lead SOIC (RM Suffix) OUT A 2IN A 1IN A V2 1 8 AD8529 4 5 V1 OUT B 2IN B 1IN B The AD8519/AD8529 is specified over the extended industrial (–40°C to +125°C) temperature range. The AD8519 is available in 5-lead SOT-23-5 and SO-8 surface mount packages. The AD8529 is available in 8-lead SOIC and µSOIC packages. REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1998 AD8519/AD8529–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (V S = +5.0 V, V– = 0 V, VCM = +2.5 V, TA = +25ⴗC unless otherwise noted) Parameter Symbol Conditions INPUT CHARACTERISTICS Offset Voltage VOS AD8519ART (SOT-23-5) –40°C ≤ TA ≤ +125°C AD8519AR (SO-8), AD8529 –40°C ≤ TA ≤ +125°C Offset Voltage VOS Input Bias Current IB Input Offset Current IOS Input Voltage Range Common-Mode Rejection Ratio VCM CMRR Large Signal Voltage Gain AVO Offset Voltage Drift Bias Current Drift OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low Short Circuit Current Maximum Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier ∆VOS/∆T ∆IB/∆T VOH VOL ISC IOUT PSRR ISY Min Typ Max Units 600 800 600 1,100 1,300 1,000 1,100 300 400 ± 50 ± 100 +4 µV µV µV µV nA nA nA nA V –40°C ≤ TA ≤ +125°C –40°C ≤ TA ≤ +125°C 0 V ≤ VCM ≤ +4.0 V, –40°C ≤ TA ≤ +125°C RL = 2 kΩ, +0.5 V < VOUT < +4.5 V RL = 10 kΩ, +0.5 V < VOUT < +4.5 V RL = 10 kΩ, –40°C ≤ TA ≤ +125°C 0 63 50 30 100 30 100 dB V/mV V/mV V/mV µV/°C pA/°C 2 500 IL = 250 µA –40°C ≤ TA ≤ +125°C IL = 5 mA IL = 250 µA –40°C ≤ TA ≤ +125°C IL = 5 mA Short to Ground, Instantaneous +4.90 +4.80 V V ± 70 ± 25 VS = +2.7 V to +7 V, –40°C ≤ TA ≤ +125°C VOUT = +2.5 V –40°C ≤ TA ≤ +125°C 110 80 600 80 200 1,200 1,400 mV mV mA mA dB dB µA µA DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin SR tS GBP φm +1 V < VOUT < +4 V, RL = 10 kΩ To 0.01% 2.9 1,200 8 60 V/µs ns MHz Degrees NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density en p-p en in 0.1 Hz to 10 Hz f = 1 kHz f = 1 kHz 0.5 7 0.4 µV p-p nV/√Hz pA/√Hz Specifications subject to change without notice. –2– REV. A AD8519/AD8529 ELECTRICAL CHARACTERISTICS (V S = +3.0 V, V– = 0 V, VCM = +1.5 V, TA = +25ⴗC unless otherwise noted) Parameter Symbol Conditions INPUT CHARACTERISTICS Offset Voltage VOS AD8519ART (SOT-23-5) –40°C ≤ TA ≤ +125°C AD8519AR (SO-8), AD8529 –40°C ≤ TA ≤ +125°C VOS Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio IB IOS VCM CMRR Large Signal Voltage Gain AVO OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier VOH VOL PSRR ISY 0 V ≤ VCM ≤ +2.0 V, –40°C ≤ TA ≤ +125°C RL = 2 kΩ, +0.5 V < VOUT < +2.5 V RL = 10 kΩ IL = 250 µA IL = 5 mA IL = 250 µA IL = 5 mA VS = +2.5 V to +7 V, –40°C ≤ TA ≤ +125°C VOUT = +1.5 V –40°C ≤ TA ≤ +125°C Min Typ Max Units 700 900 700 1,200 1,400 1,100 1,200 300 ± 50 +2 µV µV µV µV nA nA V 0 55 20 75 20 30 dB V/mV V/mV +2.90 +2.80 60 80 600 100 200 V V mV mV 1,100 1,300 dB µA µA DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin SR tS GBP φm RL = 10 kΩ To 0.01% 1.5 2,000 6 55 V/µs ns MHz Degrees NOISE PERFORMANCE Voltage Noise Density Current Noise Density en in f = 1 kHz f = 1 kHz 10 0.4 nV/√Hz pA/√Hz Specifications subject to change without notice. REV. A –3– AD8519/AD8529–SPECIFICATIONS ELECTRICAL CHARACTERISTICS (V S = +2.7 V, V– = 0 V, VCM = +1.35 V, TA = +25ⴗC unless otherwise noted) Parameter Symbol Conditions INPUT CHARACTERISTICS Offset Voltage VOS AD8519ART (SOT-23-5) –40°C ≤ TA ≤ +125°C AD8519AR (SO-8), AD8529 –40°C ≤ TA ≤ +125°C VOS Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio IB IOS VCM CMRR Large Signal Voltage Gain AVO OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier VOH VOL PSRR ISY 0 V ≤ VCM ≤ +1.7 V, –40°C ≤ TA ≤ +125°C RL = 2 kΩ, +0.5 V < VOUT < +2.2 V RL = 10 kΩ IL = 250 µA IL = 5 mA IL = 250 µA IL = 5 mA VS = +2.5 V to +7 V, –40°C ≤ TA ≤ +125°C VOUT = +1.35 V –40°C ≤ TA ≤ +125°C Min Typ Max Units 700 900 700 1,400 1,600 1,200 1,300 300 ± 50 +2 µV µV µV µV nA nA V 0 55 20 75 20 30 dB V/mV V/mV +2.60 +2.50 60 80 600 100 200 V V mV mV 1,100 1,300 dB µA µA DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin SR tS GBP φm RL = 10 kΩ To 0.01% 1.5 2,000 6 55 V/µs ns MHz Degrees NOISE PERFORMANCE Voltage Noise Density Current Noise Density en in f = 1 kHz f = 1 kHz 10 0.4 nV/√Hz pA/√Hz Specifications subject to change without notice. –4– REV. A AD8519/AD8529 ELECTRICAL CHARACTERISTICS (V S = +5.0 V, V– = –5 V, VCM = 0 V, TA = +25ⴗC unless otherwise noted) Parameter Symbol Conditions INPUT CHARACTERISTICS Offset Voltage VOS AD8519ART (SOT-23-5) –40°C ≤ TA ≤ +125°C AD8519AR (SO-8), AD8529 –40°C ≤ TA ≤ +125°C VCM = 0 V VCM = 0 V, –40°C ≤ TA ≤ +125°C VCM = 0 V VCM = 0 V, –40°C ≤ TA ≤ +125°C VOS Input Bias Current IB Input Offset Current IOS Input Voltage Range Common-Mode Rejection Ratio VCM CMRR Large Signal Voltage Gain AVO Offset Voltage Drift Bias Current Drift OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low Short Circuit Current Maximum Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier ∆VOS/∆T ∆IB/∆T VOH VOL ISC IOUT PSRR ISY Min –4.9 V ≤ VCM ≤ +4.0 V, –40°C ≤ TA ≤ +125°C RL = 2 kΩ RL = 10 kΩ –40°C ≤ TA ≤ +125°C Typ Max Units 600 800 600 1,100 1,300 1,000 1,100 300 400 ± 50 ± 100 +4 µV µV µV µV nA nA nA nA V –5 70 50 25 100 30 200 dB V/mV V/mV V/mV µV/°C pA/°C 2 500 IL = 250 µA –40°C ≤ TA ≤ +125°C IL = 5 mA IL = 250 µA –40°C ≤ TA ≤ +125°C IL = 5 mA Short to Ground, Instantaneous VS = ± 1.5 V to ± 6 V, –40°C ≤ TA ≤ +125°C VOUT = 0 V –40°C ≤ TA ≤ +125°C +4.90 +4.80 V V ± 70 ± 25 60 100 600 –4.90 –4.80 1,200 1,400 V V mA mA dB µA µA DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin SR tS GBP φm –4 V < VOUT < +4 V, RL = 10 kΩ To 0.01% 2.9 1,000 8 60 V/µs ns MHz Degrees NOISE PERFORMANCE Voltage Noise Density Current Noise Density en in f = 1 kHz f = 1 kHz 7 0.4 nV/√Hz pA/√Hz Specifications subject to change without notice. REV. A –5– AD8519/AD8529 ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6 V Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 6 V Differential Input Voltage3 . . . . . . . . . . . . . . . . . . . . . . ± 0.6 V Internal Power Dissipation SOT-23 (RT) . . . . . . . . . . . . . . . . . Observe Derating Curve SOIC (R) . . . . . . . . . . . . . . . . . . . . Observe Derating Curve µSOIC (RM) . . . . . . . . . . . . . . . . . Observe Derating Curve Output Short-Circuit Duration . . . . . Observe Derating Curve Storage Temperature Range RT, S Packages . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Operating Temperature Range AD8519, AD8529 . . . . . . . . . . . . . . . . . . –40°C to +125°C Junction Temperature Range RT, S Packages . . . . . . . . . . . . . . . . . . . . –65°C to +150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C Package Type JA1 JC Units 5-Lead SOT-23 (RT) 8-Lead SOIC (R) 8-Lead µSOIC (RM) 230 158 210 146 43 45 °C/W °C/W °C/W NOTE 1 θ JA is specified for worst case conditions, i.e., θ JA is specified for device soldered in circuit board for SOT-23 and SOIC packages. ORDERING GUIDE NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 For supply voltages less than ±6 V the input voltage is limited to less than or equal to the supply voltage. 3 For differential input voltages greater than ±0.6 V the input current should be limited to less than 5 mA to prevent degradation or destruction of the input devices. Model Temperature Range Package Description Package Option AD8519ART1 AD8519AR AD8529AR AD8529ARM2 –40°C to +125°C –40°C to +125°C –40°C to +125°C –40°C to +125°C 5-Lead SOT-23 8-Lead SOIC 8-Lead SOIC 8-Lead µSOIC RT-5 SO-8 SO-8 RM-8 NOTES 1 Available in 3,000 piece reels only. 2 Available in 2,500 piece reels only. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8519/AD8529 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. –6– WARNING! ESD SENSITIVE DEVICE REV. A Typical Characteristics – AD8519/AD8529 600 60 VS = +5V SUPPLY CURRENT – mA QUANTITY AMPLIFIERS 50 800 COUNT = 395 OP AMPS 40 30 20 SUPPLY CURRENT – mA VS = +5V TA = +258C 550 500 700 600 VS = +10V 500 VS = +2.7V, +3.0V 400 10 0.2 0.6 20.6 20.2 INPUT OFFSET VOLTAGE – mV 450 1 0 Figure 1. Input Offset Voltage Distribution 240 280 2120 2160 2200 1 2 3 4 COMMON-MODE VOLTAGE – Volts Figure 4. Input Bias Current vs. Common-Mode Voltage 40 30 80 60 40 0 1 2 3 4 COMMON-MODE VOLTAGE – Volts 0 10 210 225 220 270 90 70 80 60 70 60 50 50 100M 30 10 100k 1M FREQUENCY – Hz 10M Figure 8. CMRR vs. Frequency –7– 2PSRR +PSRR 30 20 1k 10k VS = +5V TA = +258C 40 240 10k REV. A 1M 10M FREQUENCY – Hz 80 20 Figure 7. Closed Loop Gain vs. Frequency 135 180 220 100M PHASE 0 40 100k 1M 10M FREQUENCY – Hz 90 20 90 VS = +5V TA = +258C 100 CMRR – dB 20 45 Figure 6. Open Loop Gain, Phase vs. Frequency 110 VS = +5V RL = 830V TA = +258C CL 5pF GAIN 230 100k 5 Figure 5. Common-Mode Rejection vs. Common-Mode Voltage 60 VS = +5V TA = +258C 40 100 20 5 25 50 75 100 125 150 TEMPERATURE – 8C 50 VS = +5V PSRR – dB 0 0 Figure 3. Supply Current per Amplifier vs. Temperature GAIN – dB COMMON MODE REJECTION – dB INPUT BIAS CURRENT – nA 300 250 225 12 120 VS = +5V TA = +258C 0 CLOSED LOOP GAIN – dB 4 6 8 10 SUPPLY VOLTAGE – Volts Figure 2. Supply Current per Amplifier vs. Supply Voltage 40 2240 2 0 1k 10k 100k 1M FREQUENCY – Hz 10M Figure 9. PSRR vs. Frequency PHASE SHIFT – Degrees 0 21 AD8519/AD8529 4 VS = +5V VCM = +2.5V RL = 10kV TA = +258C VIN = 650mV 40 30 2OS 20 0 21 0.1% 1% 10 23 0 10 100 CAPACITANCE – pF 24 1k Figure 10. Overshoot vs. Capacitance Load 1.0 SETTLING TIME – ms 0 3 DISTORTION < 1% 2 1 0 10k 2.0 AVCC = 10 150 100 AVCC = 1 50 0 100k 70 60 50 40 30 20 10 10M Figure 13. Output Impedance vs. Frequency VS = 62.5V AV = 100kV en = 0.4mV p-p 20mV 1s Figure 16. 0.1 Hz to 10 Hz Noise 1k 100 FREQUENCY – Hz 10 10k Figure 14. AD8519 Voltage Noise Density VS = +5V TA = +258C 7 6 5 4 3 2 1 0 0 1M FREQUENCY – Hz 10M 8 VS = +5V TA = +258C CURRENT NOISE DENSITY – pA/ Hz VOLTAGE NOISE DENSITY – nV/ Hz 200 100k 1M FREQUENCY – Hz Figure 12. Output Swing vs. Frequency 80 VS = +5V TA = +258C VS = +5V AVCC = 1 RL = 10kV TA = +258C CL = 15pF 4 Figure 11. Settling Time vs. Step Size 300 OUTPUT IMPEDANCE – V 1 22 +OS 250 1% 0.1% STEP SIZE – V OVERSHOOT – % 50 5 VS = +5V TA = +258C 3 MAXIMUM OUTPUT SWING – V p-p 60 1k 100 FREQUENCY – Hz 10 10k Figure 15. AD8519 Current Noise Density VS = 62.5V AVCC = 1 TA = +258C CL = 100pF RL = 10kV VS = 62.5V VIN = +6V p-p AV = 1 1V 20ms Figure 17. No Phase Reversal –8– 20mV 500ns Figure 18. Small Signal Transient Response REV. A AD8519/AD8529 R4 10kV VS = 62.5V AVCC = 1 TA = +258C CL = 100pF R1 10kV R2 10kV NODE A R3 4.99kV R5 10kV VIN D1 1N914 D2 1N914 VOUT U2 AD8519 U1 R6 5kV 500mV 50ms VIRTUAL GROUND = Figure 19. Large Signal Transient Response VCC 2 This type of rectifier can be very precise if the following electrical parameters are adhered to: First, all passive components should be of tight tolerance, 1% resistors and 5% capacitors. Second, if the application circuit requires high impedance (i.e., direct sensor interface), then an FET amplifier is probably a better choice than the AD8519. Third, an amp such as the AD8519, which has a great slew rate specification, will yield the best result, because the circuit involves switching. Switching glitches are caused when D1 and D2 are both momentarily off. This condition occurs every time the input signal is equal to the virtual ground potential. When this condition occurs the U1 stage is taken out of the VOUT equation and VOUT is equal to VIN ⴛ R5 ⴛ (R4储R1+R2+R3). Please note: node A should be VIN inverted or virtual ground, but in this condition node A is a simply tracking VIN. Given a sine wave input centered around virtual ground glitches are generated at the sharp negative peaks of the rectified sine wave. If the glitches are hard to notice on an oscilloscope, then raise the frequency of the sine wave till they become apparent. The size of the glitches are proportional to the input frequency, the diode turn-on potential (+0.2 V or +0.65 V) and the slew rate of the op amp. The maximum power that can be safely dissipated by the AD8519/ AD8529 is limited by the associated rise in junction temperature. The maximum safe junction temperature is +150°C for these plastic packages. If this maximum is momentarily exceeded, proper circuit operation will be restored as soon as the die temperature is reduced. Operating the product in the “overheated” condition for an extended period can result in permanent damage to the device. Precision Full-Wave Rectifier Slew Rate is probably the most underestimated parameter when designing a precision rectifier. Yet without a good slew rate large glitches will be generated during the period when both diodes are off. Let’s examine the operation of the basic circuit before considering slew rate further, U1 is set up to have two states of operation. D1 and D2 diodes switch the output between the two states. State one is as an inverter with a gain of 1 and state two is a simple unity gain buffer where the output is equal to the value of the virtual ground. The virtual ground is the potential present at the noninverting node of the U1. State one is active when VIN is larger than the virtual ground. D2 is on in this condition. If VIN drops below virtual ground, D2 turns off and D1 turns on. This causes the output of U1 to simply buffer the virtual ground and this configuration is state two. So, the function of U1, which results from these two states of operation, is a half-wave inverter. The U2 function takes the inverted half-wave at a gain of two and sums it into the original VIN wave, which outputs a rectified full-wave. −1 R7 3.32kV Figure 20. Precision Full-Wave Rectifier APPLICATIONS INFORMATION Maximum Power Dissipation VOUT = VIN − 2 VIN AD8519 R6 and R7 are both necessary to limit the amount of bias current related voltage offset. Unfortunately, there is no “perfect” value for R6 because the impedance at the inverting node is altered as D1 and D2 switch. Therefore, there will also be some unresolved bias current related offset. To minimize this offset, use lower value resistors or choose an FET amplifier if the optimized offset is still intolerable. The AD8519 offers a unique combination of speed vs. power ratio at +2.7 V single supply, small size (SOT-23), and low noise that make it an ideal choice for most high volume and high precision rectifier circuits. <0 10ⴛ Microphone Preamp, Meets PC99 Specifications This circuit, while lacking a unique topology, is anything but featureless when an AD8519 is used as the op amp. This preamp gives 20 dB gain over a frequency range of 20 Hz to 20 kHz and is fully PC99 compliant in all parameters including THD+N, dynamic range, frequency range, amplitude range, crosstalk, etc. Not only does this preamp comply with the PC99 spec it far surpasses it. In fact, this preamp has a VOUT noise of around 100 dB, which is suitable for most professional 20-bit audio systems. Referred to input noise is 120 dB. At 120 dB THD+N in unity gain the AD8519 is suitable for all 24-bit professional audio systems available today. In other words, the AD8519 will not be the limiting performance factor in your audio system despite its small size and low cost. REV. A –9– AD8519/AD8529 Slew-rate-related distortion would not be present at the lower voltages because the AD8519 is so fast at 2.1 V/µs. A general rule of thumb for determining the necessary slew rate for an audio system is: Take the maximum output voltage range of the device given the design’s power rails and divide by two. In our example in Figure 21, the power rails are +2.7 V and the output is rail-to-rail: enter those numbers into the equation 2.7/2 is +1.35 V, and our minimum ideal slew rate is 1.35 V/µs. While this data sheet gives only one audio example, many audio circuits are enhanced with the use of the AD8519. Here are just a few examples, Active audio filters like bass, treble and equalizers, PWM filters at the output of audio DACs, Buffers and Summers for mixing stations, and Gain stages for volume control. 240pF +2.7V Figure 22 is a schematic of a two-element varying bridge. This configuration is commonly found in pressure and flow transducers. With two-elements varying the signal will be 2⫻ as compared to a single-element varying bridge. The advantages of this type of bridge are gain setting range, no signal input equals 0 V out, and single supply application. Negative characteristics are nonlinear operation and required R matching. Given these sets of conditions, requirements and characteristics, the AD8519 can be successfully used in this configuration because of its rail-torail output and low offset. Perhaps the greatest benefits of the AD8519, when used in the bridge configuration, are the advantages it can bring when placed in a remote bridge sensor. For example: the tiny SOT-23 package will reduce the overall sensor package, low power allows for remote powering via batteries or solar cells, high output current drive to drive a long cable, and +2.7 V operation for two cell operation. 30.9kV +2.7V 1kV C1 1mF MIC IN +2.7V 1nF NPO AD8519 46.4kV RF CODEC LINE IN OR MIC IN 3.09kV R R R R 48kV AD8519 93.1kV +2.7V RF 10mF-ELECT Figure 22. Two-Element Varying Bridge Amplifier Figure 21. 10⫻ Microphone Preamplifier Two-Element Varying Bridge Amplifier There are a host of bridge configurations available to designers. For a complete look the ubiquitous bridge, its positives and negatives, and its many different forms, please refer to ADI’s 1992 Amplifier Applications Guide1. 1. Adolfo Garcia and James Wong, Chapter 2, 1992 Amplifier Applications Guide. –10– REV. A AD8519/AD8529 * AD8519/AD8529 SPICE Macro-model * 10/98, Ver. 1 * TAM / ADSC * * Copyright 1998 by Analog Devices * * Refer to “README.DOC” file for License State* ment. Use of this model * indicates your acceptance of the terms and * provisions in the License * Statement. * * Node Assignments * noninverting input * | inverting input * | | positive supply * | | | negative supply * | | | | output * | | | | | * | | | | | .SUBCKT AD8519 1 2 99 50 45 * *INPUT STAGE * Q1 5 7 15 PIX Q2 6 2 15 PIX IOS 1 2 1.25E-9 I1 99 15 200E-6 EOS 7 1 POLY(2) (14,98) (73,98) 1E-3 1 1 RC1 5 50 2E3 RC2 6 50 2E3 C1 5 6 1.3E-12 D1 15 8 DX V1 99 8 DC 0.9 * * INTERNAL VOLTAGE REFERENCE * EREF 98 0 POLY(2) (99,0) (50,0) 0 .5 .5 ISY 99 50 300E-6 * * CMRR=100dB, ZERO AT 1kHz * ECM 13 98 POLY(2) (1,98) (2,98) 0 0.5 0.5 RCM1 13 14 1E6 RCM2 14 98 10 CCM1 13 14 240E-12 * * PSRR=100dB, ZERO AT 200Hz * RPS1 70 0 1E6 RPS2 71 0 1E6 CPS1 99 70 1E-5 CPS2 50 71 1E-5 EPSY 98 72 POLY(2) (70,0) (0,71) 0 1 1 RPS3 72 73 1.59E6 CPS3 72 73 500E-12 RPS4 73 98 15.9 * * POLE AT 20MHz, ZERO AT 60MHz * G1 21 98 (5,6) 5.88E-6 REV. A R1 21 98 170E3 R2 21 22 85E3 C2 22 98 40E-15 * * GAIN STAGE * G2 25 98 (21,98) 37.5E-6 R5 25 98 1E7 CF 45 25 5E-12 D3 25 99 DX D4 50 25 DX * * OUTPUT STAGE * Q3 45 41 99 POUT Q4 45 43 50 NOUT EB1 99 40 POLY(1) (98,25) 0.594 1 EB2 42 50 POLY(1) (25,98) 0.594 1 RB1 40 41 500 RB2 42 43 500 * * MODELS * .MODEL PIX PNP (BF=500,IS=1E-14,KF=5E-6) .MODEL POUT PNP (BF=100,IS=1E-14,BR=0.517) .MODEL NOUT NPN (BF=100,IS=1E-14,BR=0.413) .MODEL DX D(IS=1E-14,CJO=1E-15) .ENDS AD8519 –11– AD8519/AD8529 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 0.1968 (5.00) 0.1890 (4.80) 8 0.1574 (4.00) 0.1497 (3.80) 1 0.122 (3.10) 0.114 (2.90) 5 4 0.2440 (6.20) 0.2284 (5.80) 8 5 0.199 (5.05) 0.187 (4.75) 0.122 (3.10) 0.114 (2.90) 0.0688 (1.75) 0.0532 (1.35) 0.0500 0.0192 (0.49) SEATING (1.27) PLANE BSC 0.0138 (0.35) 1 0.0196 (0.50) x 458 0.0099 (0.25) 4 PIN 1 0.0098 (0.25) 0.0075 (0.19) 0.0256 (0.65) BSC 88 08 0.0500 (1.27) 0.0160 (0.41) 0.120 (3.05) 0.112 (2.84) 0.120 (3.05) 0.112 (2.84) 0.043 (1.09) 0.037 (0.94) 0.006 (0.15) 0.002 (0.05) SEATING PLANE 0.018 (0.46) 0.008 (0.20) 0.011 (0.28) 0.003 (0.08) 33° 27° 0.028 (0.71) 0.016 (0.41) 5-Lead SOT-23 (RT-5) 0.1220 (3.100) 0.1063 (2.700) 0.0709 (1.800) 0.0590 (1.500) 3 2 1 4 5 PIN 1 0.1181 (3.000) 0.0984 (2.500) 0.0374 (0.950) REF 0.0748 (1.900) REF 0.0512 (1.300) 0.0354 (0.900) 0.0079 (0.200) 0.0035 (0.090) 0.0571 (1.450) 0.0354 (0.900) 0.0590 (0.150) 0.0000 (0.000) 0.0197 (0.500) 0.0118 (0.300) SEATING PLANE 108 08 0.0236 (0.600) 0.0039 (0.100) NOTE: PACKAGE OUTLINE INCLUSIVE AS SOLDER PLATING. PRINTED IN U.S.A. PIN 1 0.0098 (0.25) 0.0040 (0.10) C3454a–8–12/98 8-Lead SOIC (RM-8) 8-Lead Narrow Body SOIC (SO-8) –12– REV. A