TRA3225 Medium-Current Silicon Rectifier 250 Volts, 32 Amperes Compact, highly efficient silicon rectifiers for medium–current applications requiring: • High Current Surge – 500 Amperes @ TJ = 175°C • Peak Performance @ Elevated Temperature – 32 Amperes • Low Cost • Compact, Molded Package for Optimum Efficiency in a Small Case Configuration http://onsemi.com MICRODE BUTTON CASE 193 Mechanical Characteristics • Finish: All External Surfaces are Corrosion Resistant, and Contact • • • • Areas are Readily Solderable Polarity: Indicated by Cathode Band Weight: 1.8 Grams (Approximately) Maximum Temperature for Soldering Purposes: 260°C Marking: 3225 MARKING DIAGRAM 3225 LYYWW 3225 L YY WW MAXIMUM RATINGS Rating DC Blocking Voltage Non–Repetitive Peak Reverse Voltage (Halfwave, Single Phase, 60 Hz) Average Forward Current (Single Phase, Resistive Load, TC = 150°C) Symbol Value Unit VR 250 Volts VRSM 310 Volts ORDERING INFORMATION IO 32 Amps IFSM 500 Amps Operating Junction Temperature Range TJ –65 to +175 °C Storage Temperature Range Tstg –65 to +175 °C Non–Repetitive Peak Surge Current (Halfwave, Single Phase, 60 Hz) Semiconductor Components Industries, LLC, 2000 October, 2000 – Rev. 1 = Device Code = Location Code = Year = Work Week Device TRA3225 1 Package Shipping Microde Button 5000 Units/Box Publication Order Number: TRA3225/D TRA3225 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Value Unit RθJC 0.8 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Instantaneous Forward Voltage (Note 1.) (IF = 100 Amps, TC = 25°C) VF – 1.15 Volts Reverse Current (Note 1.) (VR = 250 V, TC = 25°C) (VR = 250 V, TC = 100°C) IR – – 20 250 2* 2* Forward Voltage Temperature Coefficient (IF = 10 mA) VFTC 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2%. *Typical http://onsemi.com 2 µA mV/°C TRA3225 IFSM, PEAK HALF WAVE CURRENT (A) 1400 VRRM may be applied between each cycle of surge. The TJ noted is TJ prior to surge F = 60 Hz 1000 PW = 300 s TJ = 25°C 1200 Maximum 1100 Typical TJ = 25°C TJ = 175°C 1 Cycle 100 1 100 Figure 2. Non–Repetitive Surge Current 0 900 800 700 –0.5 Typical Range –1.0 –1.5 –2.0 600 1 100 10 0.1 1000 IF, INSTANTANEOUS FORWARD CURRENT (A) P F(AV), AVERAGE POWER DISSIPATION (W) 70 60 DC 50 IFM/IFAV = 30 20 10 0 120 130 140 150 160 10 100 200 Figure 3. VF Temperature Coefficient 80 40 1 IF, INSTANTANEOUS FORWARD CURRENT (A) Figure 1. Forward Voltage IF(AV), AVERAGE FORWARD CURRENT (A) 10 NUMBER OF CYCLES 1000 COEFFICIENT (mV/ ° C) V F, INSTANTANEOUS FORWARD VOLTAGE (mV) 1300 170 180 50 IFM/IFAV = 40 DC 30 20 10 0 0 TC, CASE TEMPERATURE (°C) 10 20 30 40 IF, AVERAGE FORWARD CURRENT (A) Figure 4. Current Derating Figure 5. Forward Power Dissipation http://onsemi.com 3 50 r(t), TRANSIENT THERMAL RESISTANCE TRA3225 100 RJC(t) = RJC • r(t) Note 1 10–1 10–2 0.1 1 100 10 1000 t, TIME (ms) Figure 6. Thermal Response NOTE 1 Ppk Ppk DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk is peak of an equivalent square power pulse tp 1000 C, CAPACITANCE (pF) t1 To determine maximum junction temperature of the diode in a given situation, the following procedure is recommended. The temperature of the case should be measured using a thermocouple placed on the case at the temperature reference point (see the outline drawing on page 1). The thermal mass connected to the case is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulse operation once steady state conditions are achieved. TJ = 25°C 100 Using the measured value of TC, the junction temperature may be determined by: TJ = TC + TJC Where TJC is the increase in junction temperature above the case temperature, it may be determined by: 10 0.1 TJC = Ppk RJC [D + (1 – D) r(t1 + tp) + r(tp) – r(t1)] where: r(t) = normalized value of transient thermal resistance at time, t, from Figure 6, i.e.: 1 10 100 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance 1 TRR , REVERSE RECOVERY TIME (s) TFR , FORWARD RECOVERY TIME (s) r(t1 + tp) = normalized value of transient thermal resistance at time t1 + tp. TJ = 25°C VF TFR VFR VFR = 1.0 V VFR = 2.0 V 0.1 1 100 IF 0.25 IR IR TRR IF = 1 A 10 IF = 10 A 1 0.1 10 TJ = 25°C 0 IF, FORWARD CURRENT (A) 1 IR/IF, RATIO OF REVERSE TO FORWARD CURRENT Figure 8. Forward Recovery Time Figure 9. Reverse Recovery Time http://onsemi.com 4 10 ∂, EFFICIENCY FACTOR (%) TRA3225 square wave input 50 sine wave input TJ = 25°C 10 5 10 1 100 f, FREQUENCY (kHz) Figure 10. Rectification Waveform Efficiency RECTIFICATION EFFICIENCY NOTE RS RL VO Figure 11. Single Phase Half–Wave Rectifier Circuit The rectification efficiency factor ∂ shown in Figure 10 was calculated using the formula: P (dc) P (rms) V2o(dc) RL V2o(rms) .100% RL As the frequency of the input signal is increased, the reverse recovery time of the diode (Figure 9) becomes significant, resulting in an increase ac voltage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor ∂, as shown on Figure 10. It should be emphasized that Figure 10 shows waveform efficiency only; it does not provide a measure of diode losses. Data was obtained by measuring the ac component of VO with a true rms ac voltmeter and the dc component with a dc voltmeter. The data was used in Equation 1 to obtain points for Figure 10. (1) V 2o (dc) .100% V 2o (ac) V 2o (dc) For a sine wave input Vm sin(wt) to the diode, assume lossless, the maximum theoretical efficiency factor becomes: V2m 2R L (sine) V2m .100% 4 .100% 40.6% π2 4R L (2) For a square wave input of amplitude Vm, the efficiency factor becomes: V 2m 2R L (square) V 2m .100% 50% RL (3) (a full wave circuit has twice these efficiencies) http://onsemi.com 5 TRA3225 MECHANICAL STRESS Assembly and Soldering Information There are two basic areas of consideration for successful implementation of button rectifiers: 1. Mounting and Handling 2. Soldering Each should be carefully examined before attempting a finished assembly or mounting operation. COMPRESSION TORSION Mounting and Handling The button rectifier lends itself to a multitude of assembly arrangements, but one key consideration must always be included: One Side of the Connections to the Button Must be Flexible! This stress relief to the button should also be chosen for maximum contact area to afford the best heat transfer – but not at the expense of flexibility. For an annealed copper terminal a thickness of 0.015″ is suggested. TENSION SHEAR Exceeding these recommended maximums can result in electrical degradation of the device. Strain Relief Terminal for Button Rectifier Soldering Copper Terminal The button rectifier is basically a semiconductor chip bonded between two nickel–plated copper heat sinks with an encapsulating material of epoxy compound. The exposed metal areas are also tin plated to enhance solderability. In the soldering process it is important that the temperature not exceed 260°C if device damage is to be avoided. Various solder alloys can be used for this operation but two types are recommended for best results: 1. 95% Sn, 5% Sb; melting point 237°C 2. 96.5% tin, 3.5% silver; melting point 221°C 3. 63% tin, 37% lead; melting point 183°C Solder is available as preforms or paste. The paste contains both the metal and flux and can be dispensed rapidly. The solder preform requires the application of a flux to assure good wetting of the solder. The type of flux used depends upon the degree of cleaning to be accomplished and is a function of the metal involved. These fluxes range from a mild rosin to a strong acid; e.g., Nickel plating oxides are best removed by an acid base flux while an activated rosin flux may be sufficient for tin plated parts. Since the button is relatively lightweight, there is a tendency for it to float when the solder becomes liquid. To prevent bad joints and misalignment, it is suggested that a weighting or spring loaded fixture be employed. It is also important that severe thermal shock (either heating or cooling) be avoided as it may lead to damage of the die or encapsulant of the part. Button Base (Heat Sink Material) The base heat sink may be of various materials whose shape and size are a function of the individual application and the heat transfer requirements. Common Materials Steel Copper Aluminum Advantages and Disadvantages Low Cost: relatively low heat conductivity High Cost: high heat conductivity Medium Cost: medium heat conductivity. Relatively expensive to plate and not all platers can process aluminum. Handling of the button during assembly must be relatively gentle to minimize sharp impact shocks and avoid nicking of the plastic. Improperly designed automatic handling equipment is the worst source of unnecessary shocks. Techniques for vacuum handling and spring loading should be investigated. The mechanical stress limits for the button diode are as follows: Compression Tension Torsion Shear 32 lbs. 32 lbs. 6–inch lbs. 55 lbs. 142.3 Newton 142.3 Newton 0.68 Newtons–meters 244.7 Newton http://onsemi.com 6 TRA3225 control but requires sophisticated temperature monitoring systems such as infrared. 3. Ovens are good for batch soldering and are production limited. There are handling problems because of slow cooling. Response time is load dependent, being a function of the watt rating of the oven and the mass of parts. Large ovens may not give an acceptable temperature gradient. Capital cost is low compared to belt furnaces and flame soldering. 4. Hot Plates are good for soldering small quantities of prototype devices. Temperature control is fair with overshoot common because of the exposed heating surface. Solder flow and positioning can be corrected during soldering since the assembly is exposed. Investment cost is very low. Button holding fixtures for use during soldering may be of various materials. Stainless steel has a longer use life while black anodized aluminum is less expensive and will limit heat reflection and enhance absorption. The assembly volume will influence the choice of materials. Fixture dimension tolerances for locating the button must allow for expansion during soldering as well as allowing for button clearance. Heating Techniques The following four heating methods have their advantages and disadvantages depending on volume of buttons to be soldered. 1. Belt furnaces readily handle large or small volumes and are adaptable to establishment of “on–line’’ assembly since a variable belt speed sets the run rate. Individual furnace zone controls make excellent temperature control possible. 2. Flame Soldering involves the directing of natural gas flame jets at the base of a heatsink as the heatsink is indexed to various loading–heating– cooling–unloading positions. This is the most economical labor method of soldering large volumes. Flame soldering offers good temperature Regardless of the heating method used, a soldering profile giving the time–temperature relationship of the particular method must be determined to assure proper soldering. Profiling must be performed on a scheduled basis to minimize poor soldering. The time–temperature relationship will change depending on the heating method used. http://onsemi.com 7 TRA3225 PACKAGE DIMENSIONS MICRODE BUTTON CASE 193–04 ISSUE J DIM A B D F M A MILLIMETERS MIN MAX 8.43 8.69 4.19 4.45 5.54 5.64 5.94 6.25 5 NOM INCHES MIN MAX 0.332 0.342 0.165 0.175 0.218 0.222 0.234 0.246 5 NOM M D B F ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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