MR2520L Overvoltage Transient Suppressor Designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress transients in the automotive system, these devices operate in the forward mode as standard rectifiers or reverse mode as power avalanche rectifier and will protect electronic equipment from overvoltage conditions. Features • • • • High Power Capability Economical Increased Capacity by Parallel Operation Pb−Free Packages are Available* http://onsemi.com OVERVOLTAGE TRANSIENT SUPPRESSOR 24 − 32 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Maximum Lead Temperature for Soldering Purposes: • 350°C 3/8″ from Case for 10 Seconds at 5 lbs. Tension Polarity: Indicated by Diode Symbol or Cathode Band MICRODE AXIAL CASE 194 STYLE 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit DC Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 23 V Repetitive Peak Reverse Surge Current (Time Constant = 10 ms, Duty Cycle ≤ 1%, TC = 25°C) IRSM 58 A Peak Reverse Power (Time Constant = 10 ms, Duty Cycle ≤ 1%, TC = 25°C) PRSM 2500 W IO 6.0 A Non−Repetitive Peak Surge Current, Surge Supplied at Rated Load Conditions Halfwave, Single Phase IFSM 400 A Operating and Storage Junction Temperature Range TJ, Tstg Average Rectified Forward Current , (Single Phase, Resistive Load, 60 Hz, TC = 125°C) (See Figure 4) °C −65 to +175 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM MR2520LAYYWW G G A YY WW G = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 3 1 Publication Order Number: MR2520L/D MR2520L THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead, Both Leads to Heat Sink with Equal Length Lead Length Symbol Max Unit 6.25 mm 10 mm 15 mm RqJL 7.5 10 15 °C/W − RqJC 1.0 °C/W Thermal Resistance Junction−to−Case ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Min Max Unit Instantaneous Forward Voltage (Note 1) (IF = 100 A, TC = 25°C) VF − 1.25 V Instantaneous Forward Voltage (Note 1) (IF = 6.0 A, TC = 25°C) VF − 0.90 V Reverse Current (VR = 20 Vdc, TC = 25°C) IR − 10 nAdc Reverse Current (VR = 20 Vdc, TC = 25°C) IR − 300 nAdc Breakdown Voltage (Note 1) (IR = 100 mAdc, TC = 25°C) V(BR) 24 32 V Breakdown Voltage (Note 1) (IR = 90 A, TC = 150°C, PW = 80 ms) V(BR) − 40 V Dynamic Resistance (IR = 100 mA, TJ = 25°C, f = 1.0 kHz) RZ − 5.0 W Dynamic Resistance (IR = 40 mA, TJ = 25°C) RZ − 0.15 W Breakdown Voltage Temperature Coefficient V(BR)TC − 0.09* %/°C VFTC − −2* mV/°C Characteristic Forward Voltage Temperature Coefficient @ IF = 10 mA 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. *Typical ORDERING INFORMATION Device Package MR2520L Microde Axial MR2520LG Microde Axial (Pb−Free) MR2520LRL Microde Axial MR2520LRLG Microde Axial (Pb−Free) Shipping† 1000 / Box 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 IR, REVERSE CURRENT (NORMALIZED) IF, INSTANTANEOUS FORWARD CURRENT (A) MR2520L 1000 100 10 TJ = 150°C 100°C 25°C 1.0 600 700 800 900 1000 102 101 100 25 50 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 1. Forward Voltage Figure 2. Normalized Reverse Current 3000 2500 2000 1500 1000 5 10 15 20 25 175 25 Both leads to heatsink with equal length IF(peak)/IF(avg) = p 20 15 10 mm L = 6.25 mm 10 15 mm 5 0 20 40 60 VR, REVERSE VOLTAGE (V) 80 100 120 140 160 180 TL, LEAD TEMPERATURE (°C) Figure 3. Typical Capacitance Figure 4. Maximum Current Ratings 100 40 R qJL, THERMAL RESISTANCE JUNCTION TO LEAD ( ° C/W) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Maximum 10−1 10−2 75 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) 3500 C, CAPACITANCE (pF) 103 1100 4000 0 VR = 20 V IF(avg), AVERAGE FORWARD CURRENT (A) 500 104 L = 6.25 mm, both leads to heatsink (equal length) Typical 35 Single to heatsink 30 25 Maximum 20 Typical 15 10 5 Both leads to heatsink (equal length) 0 10−3 10−2 10−1 100 101 102 0 t, TIME (S) 5 10 15 20 LEAD LENGTH (mm) Figure 5. Thermal Response Figure 6. Steady State Thermal Resistance http://onsemi.com 3 25 100 10000 PRSM, PEAK REVERSE POWER (W) IRSM, PEAK REVERSE CURRENT (A) MR2520L TJ = 25°C 10 1 10 100 1000 100 1000 1 10 100 1000 t, TIME CONSTANT (mS) t, TIME CONSTANT (mS) Figure 7. Maximum Peak Reverse Current Figure 8. Maximum Peak Reverse Power PEAK REVERSE POWER (W) 1000 W RSM, PEAK REVERSE ENERGY (J) TJ = 25°C TJ = 25°C 100 10 1 1 10 100 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 1000 Time Constant = 10 mS Time Constant = 100 mS 25 50 75 100 125 t, TIME CONSTANT (mS) TL, LEAD TEMPERATURE (°C) Figure 9. Maximum Reverse Energy Figure 10. Reverse Power Derating 150 100 1.20 PW = 80 mS, TL = 25°C 1.16 f, FREQUENCY (HERTZ) V Z(Irsm) /V Z(100 mA) 1.18 1.14 1.12 1.10 1.08 1.06 1.04 1.02 1.00 1−5 mm (Both leads to heat sink) 10−1 1−20 mm (Both leads to heat sink) 10−2 10−3 10 20 30 40 50 60 70 80 90 100 110 120 1 IRSM, REPETITIVE PEAK REVERSE SURGE CURRENT (A) 10 100 TIME CONSTANT (ms) Figure 11. Typical Clamping Factor Figure 12. Maximum Load Dump Frequency http://onsemi.com 4 1000 MR2520L 2W 0 − 150 V 50 mF dl/dt Limitation 100 mH MR2532L Figure 13. Load Dump Test Circuit 100 dl/dt < 1 A/ms 80 (%) 60 40 20 0 0 0.1 t (50%) t (37%) 0.2 0.3 t (10%) 0.5 0.4 t (37%) = Time Constant t (50%) = 0.7 t (37%) t (10%) = 2.3 t (37%) t, TIME (S) Figure 14. Load Dump Pulse Current http://onsemi.com 5 MR2520L PACKAGE DIMENSIONS MICRODE AXIAL CASE 194−04 ISSUE H A NOTES: 1. CATHODE SYMBOL ON PACKAGE. 2. 194−01 OBSOLETE, 194−04 NEW STANDARD. D 1 MILLIMETERS INCHES DIM MIN MAX MIN MAX A 8.43 8.69 0.332 0.342 B 5.94 6.25 0.234 0.246 D 1.27 1.35 0.050 0.053 K 25.15 25.65 0.990 1.010 K STYLE 1: PIN 1. CATHODE 2. ANODE B K 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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