VISHAY TFDU2201-TR1

TFDU2201
Vishay Semiconductors
Low Profile Transceiver Module
PIN Photodiode and Infrared Emitter
Description
The miniaturized TFDU2201 is an ideal PIN photodiode transmitter combination in a unique package for
applications in telecommunications like mobile
phones and pagers. The device is mechanically
designed for lowest profile with a height of only
2.8 mm. The device is designed to be compatible to
the IrDA standard when using an external receiver IC
and IRED driver.
18170
Features
• Package dimension:
L 7.3 mm x W 4.55 mm x H 2.75 mm
• SMD side view
• Fast PIN Photodiode for SIR and FIR applications
• Detector with high efficiency and high speed at low
bias voltage
• Only 30 mA IRED peak current during transmission for IrDA SIR low power standard
• Lead(Pb)-free device
• Device in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
Applications
• Mobile Phones, Pagers, Personal Digital Assistants (PDA)
• Handheld battery operated equipment
Parts Table
Part
Description
Qty / Reel
TFDU2201-TR1
Orientated in carrier tape for side view mounting
750 pcs.
TFDU2201-TR3
Orientated in carrier tape for side view mounting
2250 pcs.
Pin Description
Pin Number
Function
Description
1
IRED GND
IRED cathode, ground, to be used as heat sink
2
IRED GND
IRED cathode, ground, to be used as heat sink
3
IRED Anode
IRED anode, to be driven by a current source
4
NC
5
NC
6
NC
7
Danode
Detector anode
8
Dcathode
Detector cathode
Document Number 82539
Rev. 1.1, 08-Dec-04
I/O
Active
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TFDU2201
Vishay Semiconductors
Pinout
TFDU2201
weight 100 mg
18228
Absolute Maximum Ratings
Parameter
Test Conditions
Photo pin diode, reverse voltage
range
Symbol
Min
Vr
- 0.3
Typ.
Max
Unit
12
V
10
mA
IIRED(DC)
100
mA
IIRED(RP)
550
mA
5
V
Ptot
200
mW
TJ
125
°C
+ 85
°C
+ 85
°C
240
°C
Photo pin diode, reverse photo
current
Average IRED current
Repetitive pulsed IRED current
< 90 µs, ton < 20 %
IRED, reverse voltage range
Power dissipation
VrIRED
see Figure 3
Juntion temperature
Ambient temperature range
(operating)
Storage temperature range
Soldering temperature
t = 20 s @ 215 °C, see Vishay
Telefunken IrDA Design Guide
Virtual source size
Method: (1 - 1/e) encircled
energy
- 0.3
Tamb
- 25
Tstg
- 40
215
d
2
mm
Compatible to Class 1 opration of IEC 60825 or EN60825 with worst case IrDA SIR pulse pattern, 115.2 kbit/s
Electrical Characteristics
Transceiver
Tested for the following parameters (T = 25 °C, unless otherwise stated)
Parameter
Supported data rates
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Test Conditions
base band
Symbol
Min
9.6
Typ.
Max
Unit
4000
kbit/s
Document Number 82539
Rev. 1.1, 08-Dec-04
TFDU2201
Vishay Semiconductors
Optoelectronic Characteristics
Receiver
Tested for the following parameters (T = 25 °:C, unless otherwise stated)
Parameter
Test Conditions
Symbol
Min
Typ.
Max
Unit
Sλ
1.0
1.2
1.8
nA/(mW/m2)
12
V
950
nm
| α | ≤ ± 15 °, Vr = 2 V,
λ = 875 nm
Spectral sensitivity
Bias voltage range, detector
VRev
Reverse leakage current
0.2
λ
800
Ee, max
8000
Spectral bandwith
nA
Max. operating irradiance
| α | ≤ ± 90 °C, VCC = 2 V
15000
W/m2
Rise time @ load : R = 50 Ω
Vr = 2 V, λ = 875 nm
tr
40
ns
Fall time @ load : R = 50 Ω
Vr = 2 V, λ = 875 nm
tr
40
ns
Transmitter
Tested for the following parameters (T = 25 °:C, unless otherwise stated)
Test Conditions
Symbol
Forward current operating
condition for low power IrDA
operation
Parameter
Ie = 4 to 28 mW/sr in | α | ≤ ± 15 °
IF1
Output radiant intensity
| α | ≤ ± 15 °, IF1 = 35 mA, 25 %
duty cycle
Ie
4
| α | ≤ ± 15 °, IF1 = 350 mA, 25 %
duty cycle
Ie
35
If = 50 mA
Forward voltage
Peak emission wavelength
Spectral emission bandwith
Optical rise/fall time
2 MHz square wave signal (duty
cycle 1 : 1)
Min
Typ.
Max
30
8
Unit
mA
14
mW/sr
mW/sr
Vf
1.2
1.45
V
λp
880
900
nm
45
nm
38
ns
Recommended Solder Profile
Solder Profile for Sn/Pb soldering
240
10 s max.
@ 230°C
220
200
2°C - 4°C/s
Temperature (°C)
180
160
140
120
120 s - 180 s
100
90 s max
80
60
2°C - 4°C/s
40
20
Lead-Free, Recommended Solder Profile
The TFDU2201 is a lead-free transceiver and qualified for lead-free processing. For lead-free solder
paste like Sn(3.0-4.0)Ag(0.5-0.9)Cu, there are two standard reflow profiles: Ramp-Soak-Spike (RSS) and
Ramp-To-Spike (RTS). The Ramp-Soak-Spike profile
was developed primarily for reflow ovens heated by
infrared radiation. With widespread use of forced convection reflow ovens the Ramp-To-Spike profile is
used increasingly. Shown below in figure 2 is Vishay’s
recommended profile for use with the TFDU2201
transceivers. For more details please refer to Application note: SMD Assembly Instruction.
0
14874
0
50
100
150
200
250
300
350
Time ( s )
Figure 1. Recommended Solder Profile for Sn/Pb soldering
Document Number 82539
Rev. 1.1, 08-Dec-04
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TFDU2201
Vishay Semiconductors
275
T ≥ 255°C for 10 s....30 s
250
225
Tpeak = 260°C
T ≥ 217°C for 70 s max
200
Temperature/°C
175
150
30 s max.
125
100
90 s...120 s
70 s max.
2°C...4°C/s
75
2°C...3°C/s
50
25
0
0
50
100
150
200
250
300
350
Time/s
19260
Figure 2. Solder Profile, RSS Recommendation
280
Tpeak = 260°C max.
260
240
220
200
Temperature/°C
180
<4°C/s
160
1.3°C/
140
120
Time above 217°C t ≤ 70 s
Time above 255°C t ≤ 30 s
Peak temperature Tpeak = 260°C
100
80
<2°C/s
60
40
20
0
0
50
100
150
200
250
300
Time/s
Figure 3. RTS Recommendation
A ramp-up rate less than 0.9°C/s is not recommended. Ramp-up rates faster than 1.3°C/s could
damage an optical part because the thermal conductivity is less than compared to a standard IC.
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Document Number 82539
Rev. 1.1, 08-Dec-04
TFDU2201
Vishay Semiconductors
Current Derating Diagram
Peak Operating Current ( mA )
600
500
400
300
200
Current derating as a function of
the maximum forward current of
IRED. Maximum duty cycle: 25%.
100
0
–40 –20 0
14875
20 40 60 80 100 120 140
Temperature ( °C )
Figure 4. Current Derating Diagram
Document Number 82539
Rev. 1.1, 08-Dec-04
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TFDU2201
Vishay Semiconductors
Package Dimensions in mm
7 x 0.8
0.5
2.3
1
14484
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6
8
0.8
Document Number 82539
Rev. 1.1, 08-Dec-04
TFDU2201
Vishay Semiconductors
Reel Dimensions
W1
Reel Hub
W2
14017
Tape Width
A max.
N
W1 min.
W2 max.
W3 min.
mm
mm
mm
mm
mm
mm
mm
24
330
60
24.4
30.4
23.9
27.4
Document Number 82539
Rev. 1.1, 08-Dec-04
W3 max.
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TFDU2201
Vishay Semiconductors
Tape Dimensions in mm
18258_1
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Document Number 82539
Rev. 1.1, 08-Dec-04
TFDU2201
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82539
Rev. 1.1, 08-Dec-04
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