TFBS4711 VISHAY Vishay Semiconductors Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation Description The TFBS4711 is a low profile, Infrared Data Transceiver module. It supports IrDA data rates up to 115.2 kbit/s (SIR). The transceiver module consists of a PIN photodiode, an infrared emitter (IRED), and a low-power CMOS control IC to provide a total frontend solution in a single package. The device is designed for the low power IrDA standard with an extended range on-axis up to 1 m. The Rxd pulse width is independent of the duration of Txd pulse and always stays at a fixed width thus making the device optimum for all standard SIR Encoder/ Decoder and interfaces. The Shut Down (SD) feature cuts current consumption to typically 10 nA. Features • Compliant with the latest IrDA physical layer low power specification ( 9.6 kbit/s to 115.2 kbit/s) • Small package: H 1.9 mm x D 3.1 mm x L 6.0 mm • Industries smallest footprint - 6.0 mm length - 1.9 mm height • Typical Link distance on-axis up to 1 m • Battery & Power Management Features: > Idle Current - 75 µA Typical > Shutdown Current - 10 nA Typical > Operates from 2.4 V - 5.5 V within specification over full temperature range from - 25 °C to + 85 °C • Remote Control - transmit distance up to 8 meters • Tri-State Receiver Output, floating in shutdown with a weak pull-up • Constant Rxd output pulse width (2 µs typical) • Meets IrFM Fast Connection requirements 18508 • Split power supply, an independent, unregulated supply for IRED Anode and a well regulated supply for VCC • Directly Interfaces with Various Super I/O and Controller Devices and Encoder/ Decoder such as TOIM4232. Applications • • • • • • • • • • • • • • • Ideal for Battery Operated Devices PDAs Mobile Phones Electronic Wallet (IrFM) Notebook Computers Digital Still and Video Cameras Printers, Fax Machines, Photocopiers, Screen Projectors Data Loggers External Infrared Adapters (Dongles) Diagnostics Systems Medical and Industrial Data Collection Devices Kiosks, POS, Point and Pay Devices GPS Access Control Field Programming Devices Parts Table Part Description Qty / Reel TFBS4711-TR1 Oriented in carrier tape for side view surface mounting 1000 pcs TFBS4711-TR3 Oriented in carrier tape for side view surface mounting 2500 pcs Document Number 82633 Rev. 1.6, 27-Feb-04 www.vishay.com 1 TFBS4711 VISHAY Vishay Semiconductors Functional Block Diagram VCC Amp Comp RxD Driver IRED A Power SD TxD Control 18280 Driver GND Pinout Definitions: TFBS4711 weight 50 mg In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes: SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy 1.0 MIR: 576 kbit/s to 1152 kbit/s FIR: 4 Mbit/s VFIR: 16 Mbit/s MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhy 1.4.A new version of the standard in any case obsoletes the former 1 2 3 4 5 6 version. With introducing the updated versions the old versions are obso- 18466 lete. Therefore the only valid IrDA standard is the actual version IrPhy 1.4 (in Oct. 2002). Pin Description Pin Number Function Description 1 IRED Anode IRED Anode is directly connected to a power supply. The LED current can be decreased by adding a resistor in series between the power supply and IRED Anode. A separate unregulated power supply can be used at this pin. I/O Active 2 Txd This Input is used to turn on IRED transmitter when SD is low. An on-chip protection circuit disables the LED driver if the Txd pin is asserted for longer than 80 µs I HIGH 3 Rxd Received Data Output, normally stays high but goes low for a fixed duration during received pulses. It is capable of driving a standard CMOS or TTL load. O LOW 4 SD Shutdown. Setting this pin active switches the device into shutdown mode I HIGH 5 VCC Supply Voltage 6 GND Ground www.vishay.com 2 Document Number 82633 Rev. 1.6, 27-Feb-04 TFBS4711 VISHAY Vishay Semiconductors Absolute Maximum Ratings Reference Point Ground, Pin 6 unless otherwise noted. Parameter Test Conditions Supply voltage range, all states Input current For all Pins except IRED Anode Pin Symbol Min VCC - 0.5 ICC Output sink current, Rxd Average output current, pin 1 20 % duty cycle Repetitive pulsed output current < 90 µs, ton < 20 % IRED anode voltage, pin 1 Voltage at all inputs and outputs Vin > VCC is allowed IIRED (DC) IIRED (RP) Typ. Max Unit + 6.0 V 10.0 mA 25.0 mA 80 mA 400 mA VIREDA - 0.5 + 6.0 V VIN - 0.5 + 6.0 V Ambient temperature range (operating) Tamb - 30 + 85 °C Storage temperature range Tstg - 40 + 100 °C 240 °C Soldering temperature Document Number 82633 Rev. 1.6, 27-Feb-04 See Recommended Solder Profile www.vishay.com 3 TFBS4711 VISHAY Vishay Semiconductors Eye safety information Symbol Min Typ. Virtual source size Parameter Method: (1-1/e) encircled energy Test Conditions d 1.3 1.5 Maximum intensity for class 1 IEC60825-1 or EN60825-1, edition Jan. 2001, operating below the absolute maximum ratings Ie Max Unit mm *) mW/sr (500)**) Electrical Characteristics Transceiver Tamb = 25 °C, VCC = VIREDA = 2.4 V to 5.5 V unless otherwise noted. Parameter Test Conditions Supply voltage range, all states Idle supply current @ VCC1 (receive mode, no signal) Receive current Shutdown current Symbol Min VCC 2.4 Typ. Max Unit 5.5 V 130 µA SD = Low, Ee = 1 klx*), Tamb = - 25 °C to + 85 °C, VCC = 2.7 V to 5.5 V ICC1 SD = Low, Ee = 1 klx*), Tamb = 25 °C, VCC = 2.7 V to 5.5 V ICC1 75 µA VCC = 2.7 V ICC 80 µA SD = High, T = 25 °C, Ee = 0 klx ISD < 0.1 SD = High, T = 85 °C ISD Operating temperature range TA 2 µA 3 µA - 25 + 85 °C Output voltage low, Rxd IOL = 1 mA VOL - 0.5 0.15 x VCC V Output voltage high, Rxd IOH = - 500 µA VOH 0.8 x VCC VCC + 0.5 V IOH = - 250 µA VOH 0.9 x VCC VCC + 0.5 V Rxd to VCC impedance Input voltage low: Txd, SD Input voltage high: Txd, SD CMOS level (0.5 x VCC typ, threshold level) Input leakage current (Txd, SD) Vin = 0.9 x VCC Controlled pull down current SD, Txd = "0" or "1", 0 < Vin < 0.15 VCC SD, Txd = "0" or "1" Vin > 0.7 VCC Input capacitance www.vishay.com 4 RRxd 400 600 kΩ VIL - 0.5 500 0.5 V VIH VCC - 0.5 6.0 V IICH -2 +2 µA + 150 µA 1 µA 5 pF IIRTx IIRTx CIN -1 0 Document Number 82633 Rev. 1.6, 27-Feb-04 TFBS4711 VISHAY Vishay Semiconductors Optoelectronic Characteristics Receiver Tamb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted Parameter Test Conditions Symbol Minimum detection threshold irradiance 9.6 kbit/s to 115.2 kbit/s λ = 850 nm - 900 nm, α = 0 °, 15 ° Ee Maximum detection threshold irradiance λ = 850 nm - 900 nm Ee Maximum no detection threshold irradiance Ee Min Typ. Max Unit 35 (3.5) 80 (8) mW/m2 (µW/cm2) 5 (500) kW/m2 (mW/cm2) 4 (0.4) mW/m2 (µW/cm2) Rise time of output signal 10 % to 90 %, CL = 15 pF tr(Rxd) 10 100 ns Fall time of output signal 90 % to 10 %, CL = 15 pF tf(Rxd) 10 100 ns Rxd pulse width Input pulse width > 1.2 µs tPW 1.7 3.0 µs Leading edge jitter Input Irradiance = 100 mW/m2, ≤ 115.2 kbit/s 250 ns Standby /Shutdown delay, receiver startup time After shutdown active or power-on 150 µs 150 µs Latency 2.0 tL Transmitter Tamb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted. Parameter Test Conditions IRED operating current Tamb = - 25 °C to + 85 °C Transceiver operating peak supply current During pulsed IRED operation @ ID = 300 mA Symbol Min Typ. Max Unit ID 200 300 400 mA ICC 0.57 mA µA IRED leakage current Txd = 0 V, 0 < VCC < 5.5 V IIRED -1 Output radiant intensity α = 0 °, Txd = High, SD = Low, R = 0 Ω, VLED = 2.4 V Ie tbd 60 mW/sr α = 0 °, 15 °, Txd = High, SD = Low, R = 0 Ω, VLED = 2.4 V Ie tbd 35 mW/sr VCC = 5.0 V, α = 0 °, 15 °, Txd = High or SD = High (Receiver is inactive as long as SD = High) Ie Peak-emission wavelength λp Spectral bandwidth ∆λ Optical rise time tropt Optical fall time Optical output pulse duration Optical overshoot Document Number 82633 Rev. 1.6, 27-Feb-04 0.04 α Output radiant intensity, angle of half intensity 1 ± 22 880 ° 900 nm 45 10 tfopt 10 Input pulse width 1.63 µs, 115.2 kbit/s topt 1.41 Input pulse width tTxd < 20 µs topt tTxd Input pulse width tTxd ≥ 20 µs topt 1.63 mW/sr nm 100 ns 100 ns 2.23 µs tTxd + 0.15 µs 300 µs 25 % www.vishay.com 5 TFBS4711 VISHAY Vishay Semiconductors Recommended Solder Profile 260 10 s max. @ 230°C 240°C max. 240 220 2 - 4 °C/s 200 Temperature /°C 180 160°C max. 160 140 120 s...180 s 120 90 s max. 100 80 2...4°C/s 60 40 20 0 0 50 100 150 18075 200 Recommended Circuit Diagram VCC IR Controller Vdd Rled TFBS4711 IREDA (1) TxD IRTX IRRX IRMODE R1= 47Ω (2) RxD (3) SD (4) Vcc (5) GND (6) GND C4 C2 C3 C1 4.7 µF 0.1µF 4.7 µF 0.1 µF 18510 Figure 1. Recommended Application Circuit The TFBS4711 integrates a sensitive receiver and a built-in power driver. This combination needs a careful circuit layout. The use of thin, long, resistive and inductive wiring should be avoided. The inputs (Txd, SD) and the output (Rxd) should be directly (DC) coupled to the I/O circuit. www.vishay.com 6 250 300 350 Time/s The combination of resistor R1 and capacitors C1, C2, C3 and C4 filter out any power supply noise to provide a smooth supply voltage. The placement of these components is critical. It is strongly recommended to position C3 and C4 as close as possible to the transceiver power supply pins. A Tantalum capacitor should be used for C1 and C3 while a ceramic capacitor should be used for C2 and C4. A current limiting resistor is not needed for normal operation. It is strongly recommended to use the Rled values mentioned in Table 1 below for high temperature operation. For Low Power Mode, IRED Anode voltage of less than 5 V is recommended. Under extreme EMI conditions as placing a RF transmitter antenna on top of the transceiver, it is recommended to protect all inputs by a low-pass filter, as a minimum a 12 pF capacitor, especially at the Rxd port. Basic RF design rules for circuit design should be followed. Especially longer signal lines should not be used without proper termination. For reference see "The Art of Electronics" by Paul Horowitz, Winfield Hill, 1989, Cambridge University Press, ISBN: 0521370957. Document Number 82633 Rev. 1.6, 27-Feb-04 TFBS4711 VISHAY Vishay Semiconductors I/O and Software In the description, already different I/Os are mentioned. Different combinations are tested and the function verified with the special drivers available from the I/O suppliers. In special cases refer to the I/ O manual, the Vishay application notes, or contact directly Vishay Sales, Marketing or Application. Table 1. Recommended Application Circuit Components Component Recommended Value C1, C3 4.7 µF, 16 V Vishay Part Number 293D 475X9 016B C2, C4 0.1 µF, Ceramic VJ 1206 Y 104 J XXMT R1 47 Ω, 0.125 W CRCW-1206-47R0-F-RT1 Rled See Table 1 Table 2. Truth table SD Txd Optical input Irradiance Rxd Transmitter Operation mW/m2 Inputs Inputs Inputs Outputs Outputs Remark high x x weakly pulled (500 Ω) to VCC1 0 Shutdown low high x high inactive Ie Transmitting low high > 300 µs x high inactive 0 Protection is active low low <4 high inactive 0 Ignoring low signals below the IrDA defined threshold for noise immunity low low > Min. Detection Threshold Irradiance < Max. Detection Threshold Irradiance low (active) 0 Response to an IrDA compliant optical input signal low low > Max. Detection Threshold Irradiance undefined 0 Overload conditions can cause unexpected outputs Document Number 82633 Rev. 1.6, 27-Feb-04 www.vishay.com 7 TFBS4711 VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) 6.00 (0.236) 1.90 (0.075) EMITTER DETECTOR 3.81 (0.150) 3.00 (0.118) 0.66 (0.026) 1.65 (0.065) PIN 1 ISO Method A 0.95 (0.037) (5 PLCS) TOL NON CUM 0.62 (0.025) 0.36 (0.014) (6 PLCS) 0.42 (0.017) 0.58 (0.023) (6 PLCS) 0.13 ± 0.05 (0.005 ± 0.002) RECOMMENDED FOOTPRINT TOP VIEW 0.95 (0.037) 1 2 3 4 5 0.64 (0.025) 6 0.81 (0.032) 1.74 (0.068) EMITTER DETECTOR 18815 www.vishay.com 8 Document Number 82633 Rev. 1.6, 27-Feb-04 TFBS4711 VISHAY Vishay Semiconductors Reel Dimensions W1 Reel Hub W2 14017 Tape Width A max. N W1 min. W2 max. W3 min. mm mm mm mm mm mm mm 16 330 50 16.4 22.4 15.9 19.4 Document Number 82633 Rev. 1.6, 27-Feb-04 W3 max. www.vishay.com 9 TFBS4711 VISHAY Vishay Semiconductors Tape Dimensions in mm 18297 www.vishay.com 10 Document Number 82633 Rev. 1.6, 27-Feb-04 TFBS4711 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 82633 Rev. 1.6, 27-Feb-04 www.vishay.com 11