VISHAY TFBS4711

TFBS4711
VISHAY
Vishay Semiconductors
Serial Infrared Transceiver SIR, 115.2 kbit/s,
2.7 V to 5.5 V Operation
Description
The TFBS4711 is a low profile, Infrared Data Transceiver module. It supports IrDA data rates up to
115.2 kbit/s (SIR). The transceiver module consists of
a PIN photodiode, an infrared emitter (IRED), and a
low-power CMOS control IC to provide a total frontend solution in a single package.
The device is designed for the low power IrDA standard with an extended range on-axis up to 1 m. The
Rxd pulse width is independent of the duration of Txd
pulse and always stays at a fixed width thus making
the device optimum for all standard SIR Encoder/
Decoder and interfaces. The Shut Down (SD) feature
cuts current consumption to typically 10 nA.
Features
• Compliant with the latest IrDA physical layer
low power specification
( 9.6 kbit/s to 115.2 kbit/s)
• Small package:
H 1.9 mm x D 3.1 mm x L 6.0 mm
• Industries smallest footprint
- 6.0 mm length
- 1.9 mm height
• Typical Link distance on-axis up to 1 m
• Battery & Power Management Features:
> Idle Current - 75 µA Typical
> Shutdown Current - 10 nA Typical
> Operates from 2.4 V - 5.5 V within specification
over full temperature range from - 25 °C to + 85 °C
• Remote Control - transmit distance up to 8 meters
• Tri-State Receiver Output, floating in shutdown
with a weak pull-up
• Constant Rxd output pulse width (2 µs typical)
• Meets IrFM Fast Connection requirements
18508
• Split power supply, an independent, unregulated
supply for IRED Anode and a well regulated
supply for VCC
• Directly Interfaces with Various Super I/O and
Controller Devices and Encoder/ Decoder such as
TOIM4232.
Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Ideal for Battery Operated Devices
PDAs
Mobile Phones
Electronic Wallet (IrFM)
Notebook Computers
Digital Still and Video Cameras
Printers, Fax Machines, Photocopiers,
Screen Projectors
Data Loggers
External Infrared Adapters (Dongles)
Diagnostics Systems
Medical and Industrial Data Collection Devices
Kiosks, POS, Point and Pay Devices
GPS
Access Control
Field Programming Devices
Parts Table
Part
Description
Qty / Reel
TFBS4711-TR1
Oriented in carrier tape for side view surface mounting
1000 pcs
TFBS4711-TR3
Oriented in carrier tape for side view surface mounting
2500 pcs
Document Number 82633
Rev. 1.6, 27-Feb-04
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1
TFBS4711
VISHAY
Vishay Semiconductors
Functional Block Diagram
VCC
Amp
Comp
RxD
Driver
IRED A
Power
SD
TxD
Control
18280
Driver
GND
Pinout
Definitions:
TFBS4711
weight 50 mg
In the Vishay transceiver data sheets the following nomenclature is
used for defining the IrDA operating modes:
SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared
standard with the physical layer version IrPhy 1.0
MIR: 576 kbit/s to 1152 kbit/s
FIR: 4 Mbit/s
VFIR: 16 Mbit/s
MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy
1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the
Low Power Option to MIR and FIR and VFIR was added with IrPhy
1.4.A new version of the standard in any case obsoletes the former
1
2
3
4
5
6
version.
With introducing the updated versions the old versions are obso-
18466
lete. Therefore the only valid IrDA standard is the actual version
IrPhy 1.4 (in Oct. 2002).
Pin Description
Pin Number
Function
Description
1
IRED
Anode
IRED Anode is directly connected to a power supply. The LED current can be
decreased by adding a resistor in series between the power supply and IRED
Anode. A separate unregulated power supply can be used at this pin.
I/O
Active
2
Txd
This Input is used to turn on IRED transmitter when SD is low. An on-chip
protection circuit disables the LED driver if the Txd pin is asserted for longer than
80 µs
I
HIGH
3
Rxd
Received Data Output, normally stays high but goes low for a fixed duration
during received pulses. It is capable of driving a standard CMOS or TTL load.
O
LOW
4
SD
Shutdown. Setting this pin active switches the device into shutdown mode
I
HIGH
5
VCC
Supply Voltage
6
GND
Ground
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Document Number 82633
Rev. 1.6, 27-Feb-04
TFBS4711
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
Reference Point Ground, Pin 6 unless otherwise noted.
Parameter
Test Conditions
Supply voltage range, all states
Input current
For all Pins except IRED Anode
Pin
Symbol
Min
VCC
- 0.5
ICC
Output sink current, Rxd
Average output current, pin 1
20 % duty cycle
Repetitive pulsed output current < 90 µs, ton < 20 %
IRED anode voltage, pin 1
Voltage at all inputs and outputs Vin > VCC is allowed
IIRED (DC)
IIRED (RP)
Typ.
Max
Unit
+ 6.0
V
10.0
mA
25.0
mA
80
mA
400
mA
VIREDA
- 0.5
+ 6.0
V
VIN
- 0.5
+ 6.0
V
Ambient temperature range
(operating)
Tamb
- 30
+ 85
°C
Storage temperature range
Tstg
- 40
+ 100
°C
240
°C
Soldering temperature
Document Number 82633
Rev. 1.6, 27-Feb-04
See Recommended Solder
Profile
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3
TFBS4711
VISHAY
Vishay Semiconductors
Eye safety information
Symbol
Min
Typ.
Virtual source size
Parameter
Method: (1-1/e) encircled
energy
Test Conditions
d
1.3
1.5
Maximum intensity for class 1
IEC60825-1 or EN60825-1,
edition Jan. 2001, operating
below the absolute maximum
ratings
Ie
Max
Unit
mm
*)
mW/sr
(500)**)
Electrical Characteristics
Transceiver
Tamb = 25 °C, VCC = VIREDA = 2.4 V to 5.5 V unless otherwise noted.
Parameter
Test Conditions
Supply voltage range, all states
Idle supply current @ VCC1
(receive mode, no signal)
Receive current
Shutdown current
Symbol
Min
VCC
2.4
Typ.
Max
Unit
5.5
V
130
µA
SD = Low, Ee = 1 klx*),
Tamb = - 25 °C to + 85 °C,
VCC = 2.7 V to 5.5 V
ICC1
SD = Low, Ee = 1 klx*),
Tamb = 25 °C,
VCC = 2.7 V to 5.5 V
ICC1
75
µA
VCC = 2.7 V
ICC
80
µA
SD = High, T = 25 °C, Ee = 0 klx
ISD
< 0.1
SD = High, T = 85 °C
ISD
Operating temperature range
TA
2
µA
3
µA
- 25
+ 85
°C
Output voltage low, Rxd
IOL = 1 mA
VOL
- 0.5
0.15 x VCC
V
Output voltage high, Rxd
IOH = - 500 µA
VOH
0.8 x VCC
VCC + 0.5
V
IOH = - 250 µA
VOH
0.9 x VCC
VCC + 0.5
V
Rxd to VCC impedance
Input voltage low: Txd, SD
Input voltage high: Txd, SD
CMOS level (0.5 x VCC typ,
threshold level)
Input leakage current (Txd, SD) Vin = 0.9 x VCC
Controlled pull down current
SD, Txd = "0" or "1",
0 < Vin < 0.15 VCC
SD, Txd = "0" or "1"
Vin > 0.7 VCC
Input capacitance
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4
RRxd
400
600
kΩ
VIL
- 0.5
500
0.5
V
VIH
VCC - 0.5
6.0
V
IICH
-2
+2
µA
+ 150
µA
1
µA
5
pF
IIRTx
IIRTx
CIN
-1
0
Document Number 82633
Rev. 1.6, 27-Feb-04
TFBS4711
VISHAY
Vishay Semiconductors
Optoelectronic Characteristics
Receiver
Tamb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted
Parameter
Test Conditions
Symbol
Minimum detection threshold
irradiance
9.6 kbit/s to 115.2 kbit/s
λ = 850 nm - 900 nm,
α = 0 °, 15 °
Ee
Maximum detection threshold
irradiance
λ = 850 nm - 900 nm
Ee
Maximum no detection
threshold irradiance
Ee
Min
Typ.
Max
Unit
35
(3.5)
80
(8)
mW/m2
(µW/cm2)
5
(500)
kW/m2
(mW/cm2)
4
(0.4)
mW/m2
(µW/cm2)
Rise time of output signal
10 % to 90 %, CL = 15 pF
tr(Rxd)
10
100
ns
Fall time of output signal
90 % to 10 %, CL = 15 pF
tf(Rxd)
10
100
ns
Rxd pulse width
Input pulse width > 1.2 µs
tPW
1.7
3.0
µs
Leading edge jitter
Input Irradiance = 100 mW/m2,
≤ 115.2 kbit/s
250
ns
Standby /Shutdown delay,
receiver startup time
After shutdown active
or power-on
150
µs
150
µs
Latency
2.0
tL
Transmitter
Tamb = 25 °C, VCC = 2.4 V to 5.5 V unless otherwise noted.
Parameter
Test Conditions
IRED operating current
Tamb = - 25 °C to + 85 °C
Transceiver operating peak
supply current
During pulsed IRED operation
@ ID = 300 mA
Symbol
Min
Typ.
Max
Unit
ID
200
300
400
mA
ICC
0.57
mA
µA
IRED leakage current
Txd = 0 V, 0 < VCC < 5.5 V
IIRED
-1
Output radiant intensity
α = 0 °, Txd = High, SD = Low,
R = 0 Ω, VLED = 2.4 V
Ie
tbd
60
mW/sr
α = 0 °, 15 °, Txd = High, SD =
Low, R = 0 Ω, VLED = 2.4 V
Ie
tbd
35
mW/sr
VCC = 5.0 V, α = 0 °, 15 °, Txd =
High or SD = High (Receiver is
inactive as long as SD = High)
Ie
Peak-emission wavelength
λp
Spectral bandwidth
∆λ
Optical rise time
tropt
Optical fall time
Optical output pulse duration
Optical overshoot
Document Number 82633
Rev. 1.6, 27-Feb-04
0.04
α
Output radiant intensity, angle of
half intensity
1
± 22
880
°
900
nm
45
10
tfopt
10
Input pulse width 1.63 µs,
115.2 kbit/s
topt
1.41
Input pulse width tTxd < 20 µs
topt
tTxd
Input pulse width tTxd ≥ 20 µs
topt
1.63
mW/sr
nm
100
ns
100
ns
2.23
µs
tTxd + 0.15
µs
300
µs
25
%
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5
TFBS4711
VISHAY
Vishay Semiconductors
Recommended Solder Profile
260
10 s max. @ 230°C
240°C max.
240
220
2 - 4 °C/s
200
Temperature /°C
180
160°C max.
160
140
120 s...180 s
120
90 s max.
100
80
2...4°C/s
60
40
20
0
0
50
100
150
18075
200
Recommended Circuit Diagram
VCC
IR Controller
Vdd
Rled
TFBS4711
IREDA (1)
TxD
IRTX
IRRX
IRMODE
R1= 47Ω
(2)
RxD
(3)
SD
(4)
Vcc
(5)
GND
(6)
GND
C4
C2
C3
C1
4.7 µF 0.1µF 4.7 µF 0.1 µF
18510
Figure 1. Recommended Application Circuit
The TFBS4711 integrates a sensitive receiver and a
built-in power driver. This combination needs a careful circuit layout. The use of thin, long, resistive and
inductive wiring should be avoided. The inputs (Txd,
SD) and the output (Rxd) should be directly (DC) coupled to the I/O circuit.
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6
250
300
350
Time/s
The combination of resistor R1 and capacitors C1,
C2, C3 and C4 filter out any power supply noise to
provide a smooth supply voltage.
The placement of these components is critical. It is
strongly recommended to position C3 and C4 as
close as possible to the transceiver power supply
pins. A Tantalum capacitor should be used for C1 and
C3 while a ceramic capacitor should be used for C2
and C4.
A current limiting resistor is not needed for normal
operation. It is strongly recommended to use the Rled
values mentioned in Table 1 below for high
temperature operation. For Low Power Mode, IRED
Anode voltage of less than 5 V is recommended.
Under extreme EMI conditions as placing a RF transmitter antenna on top of the transceiver, it is recommended to protect all inputs by a low-pass filter, as
a minimum a 12 pF capacitor, especially at the Rxd
port.
Basic RF design rules for circuit design should be followed. Especially longer signal lines should not be
used without proper termination. For reference see
"The Art of Electronics" by Paul Horowitz, Winfield
Hill, 1989, Cambridge University Press, ISBN:
0521370957.
Document Number 82633
Rev. 1.6, 27-Feb-04
TFBS4711
VISHAY
Vishay Semiconductors
I/O and Software
In the description, already different I/Os are mentioned. Different combinations are tested and the
function verified with the special drivers available
from the I/O suppliers. In special cases refer to the I/
O manual, the Vishay application notes, or contact
directly Vishay Sales, Marketing or Application.
Table 1.
Recommended Application Circuit Components
Component
Recommended Value
C1, C3
4.7 µF, 16 V
Vishay Part Number
293D 475X9 016B
C2, C4
0.1 µF, Ceramic
VJ 1206 Y 104 J XXMT
R1
47 Ω, 0.125 W
CRCW-1206-47R0-F-RT1
Rled
See Table 1
Table 2.
Truth table
SD
Txd
Optical input Irradiance
Rxd
Transmitter
Operation
mW/m2
Inputs
Inputs
Inputs
Outputs
Outputs
Remark
high
x
x
weakly pulled
(500 Ω) to VCC1
0
Shutdown
low
high
x
high inactive
Ie
Transmitting
low
high
> 300 µs
x
high inactive
0
Protection is active
low
low
<4
high inactive
0
Ignoring low signals below the
IrDA defined threshold for
noise immunity
low
low
> Min. Detection Threshold Irradiance
< Max. Detection Threshold Irradiance
low (active)
0
Response to an IrDA
compliant optical input signal
low
low
> Max. Detection Threshold Irradiance
undefined
0
Overload conditions can
cause unexpected outputs
Document Number 82633
Rev. 1.6, 27-Feb-04
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7
TFBS4711
VISHAY
Vishay Semiconductors
Package Dimensions in mm (Inches)
6.00 (0.236)
1.90 (0.075)
EMITTER
DETECTOR
3.81 (0.150)
3.00 (0.118)
0.66 (0.026)
1.65 (0.065)
PIN 1
ISO Method A
0.95 (0.037) (5 PLCS)
TOL NON CUM
0.62 (0.025)
0.36 (0.014) (6 PLCS)
0.42 (0.017)
0.58 (0.023) (6 PLCS)
0.13 ± 0.05
(0.005 ± 0.002)
RECOMMENDED FOOTPRINT
TOP VIEW
0.95 (0.037)
1
2
3
4
5
0.64 (0.025)
6
0.81 (0.032)
1.74 (0.068)
EMITTER
DETECTOR
18815
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8
Document Number 82633
Rev. 1.6, 27-Feb-04
TFBS4711
VISHAY
Vishay Semiconductors
Reel Dimensions
W1
Reel Hub
W2
14017
Tape Width
A max.
N
W1 min.
W2 max.
W3 min.
mm
mm
mm
mm
mm
mm
mm
16
330
50
16.4
22.4
15.9
19.4
Document Number 82633
Rev. 1.6, 27-Feb-04
W3 max.
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9
TFBS4711
VISHAY
Vishay Semiconductors
Tape Dimensions in mm
18297
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10
Document Number 82633
Rev. 1.6, 27-Feb-04
TFBS4711
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82633
Rev. 1.6, 27-Feb-04
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