ETC HMF8M16F8V

HANBit
HMF8M16F8V-90
FLASH-ROM MODULE 16MByte (8M x 16-Bit) – Memory Stack
Type
Part No. HMF8M16F8V- 90
GENERAL DESCRIPTION
The HMF8M16F8V is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an
x16bit configuration. The module consists of eight 2M x 8 FROM mounted on a 100-pin, MMC connector FR4-printed circuit
board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power
design. All module components may be powered from a single +3V DC power supply and all inputs and outputs are LVTTLcompatible.
FEATURES
w Part identification
-
PIN ASSIGNMENT
HMF8M16F8V(Bottom boot block configuration)
w Access time: 70, 80, 90, 120ns
w High-density 16MByte design
w High-reliability, low-power design
w Single + 3V to 3.6V power supply
w 100-Pin Designed
50-Pin Fine Pitch MMC Connector P1,P2
w Minimum 1,000,000 write cycle guarantee
per sector
w 20-year data retention at 125 oC
w Flexible sector architecture
w Embedded algorithms
w Erase suspend / Erase resume
OPTIONS
MARKING
w Timing
70ns access
- 70
80ns access
- 80
90ns access
- 90
120ns access
-120
Vcc
A22
A21
A20
DQ15
DQ14
DQ13
Vss
DQ12
DQ11
DQ10
DQ8
Vss
DQ6
DQ4
DQ3
DQ2
Vss
DQ1
DQ0
A0
A1
A2
A3
Vcc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
Vcc
NC
A19
A18
A17
A16
A15
Vss
A14
A13
DQ9
DQ7
Vss
DQ5
A12
A11
A10
Vss
A9
A8
A7
A6
A5
A4
Vcc
Vcc
NC
/WE0
/WE1
Ready
NC
NC
Vss
/OE
/CS
NC
NC
Vss
NC
NC
NC
/Reset
Vss
NC
NC
NC
NC
Vss
NC
Vcc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
Vcc
NC
NC
NC
NC
NC
NC
Vss
NC
NC
NC
NC
Vss
NC
NC
NC
NC
Vss
NC
NC
NC
NC
Vss
NC
Vcc
50-PIN P1 Connector
50-PIN P2 Connector
1
HANBit Electronics Co., Ltd.
w Packages
FH 100-pin
URL: www.hbe.co.kr
REV.02(August,2002)
F
HANBit
HMF8M16F8V-90
FUNCTIONAL BLOCK DIAGRAM
A0-20
D0-15
D0-7
A
/Bank0
A
A
U1
A
/CE
/OE
/WE
/Reset
/RY-BY
U3
A
D
/CE
/OE
/WE
/Reset
/RY-BY
A
/Bank3
/CE
/OE
/WE
/Reset
/RY-BY
D
/CE
/OE
/WE
/Reset
/RY-BY
/Bank2
A
D
/CE
/OE
/WE
/Reset
/RY-BY
/Bank1
D8-15
/OE
/WE
/Reset
/RY-BY
U5
A
/CE
/OE
/WE
/Reset
/RY-BY
/CE
/OE
/WE0
/Reset
/Ry-By
/WE1
U2
D
U4
D
/CE
D
/OE
/WE
/Reset
/RY-BY
D
U7
U6
D
U8
Decoder
A21
A22
/CS
URL: www.hbe.co.kr
REV.02(August,2002)
/Bank0
/Bank1
/Bank2
/Bank3
A
B
/E
2
HANBit Electronics Co., Ltd.
HANBit
HMF8M16F8V-90
TRUTH TABLE
MODE
/CS
/OE
/WE
RESET
DQ
Vcc±0.3V
X
X
Vcc±0.3V
HIGH-Z
RESET
X
X
X
L
HIGH-Z
SECTOR PROTECT
L
H
L
VID
DIN, DOUT
SECTOR UNPROTECT
L
H
L
VID
DIN, DOUT
READ
L
L
H
H
DOUT
WRITE
L
H
L
H
DOUT
STANDBY
Note : X means don't care, WE0* Low byte (D0~7) Write enable, WE1* High byte(D8~15) Write enable.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
Voltage on Any Pin Relative to Vss
-0.5V to Vcc +0.5V
Voltage on Vcc Supply Relative to Vss
-0.5V to +4.0V
Output Short Circuit Current
1,600mA
-65oC to +150oC
Storage Temperature
Operating Temperature
-0oC to +70oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in
the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
RANGE
Vcc for regulated Supply Voltage
+3.0V to 3.6V
Vcc for full voltage
+2.7V to 3.6V
DC AND OPERATING CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNITS
Input Load Current
VIN= VSS to VCC , VCC= VCC max
IL1
±8.0
µA
Output Leakage Current
VOUT= VSS to VCC, VCC= VCC max
IL0
±8.0
µA
Output High Voltage
IOH = -2.0mA, Vcc = Vcc min
VOH
Output Low Voltage
IOL = 4.0mA, Vcc = Vcc min
VOL
0.45
V
Vcc Active Read Current
/CE = VIL, ,/OE=VIH, f=5MHz
ICC1
128
mA
URL: www.hbe.co.kr
REV.02(August,2002)
3
0.85Vcc
V
HANBit Electronics Co., Ltd.
HANBit
HMF8M16F8V-90
Vcc Active Write Current
/CE = VIL, /OE=VIH
ICC2
240
mA
Vcc Standby Current
/CE, RESET=VCC±0.3V
ICC3
40
µA
Vcc Reset Current
/RESET=Vss±0.3V,
ICC4
40
µA
2.5
V
Low Vcc Lock-Out Voltage
VLKO
2.3
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
MIN.
TYP.
MAX.
0.7
15
COMMENTS
Excludes 00H programming
Sector Erase Time
-
Sec
prior to erasure
Byte Programming Time
-
9
Excludes system-level
µS
300
overhead
Excludes system-level
Chip Programming Time
-
18
54
sec
overhead
TSOP PIN CAPACITANCE
PARAMETER
PARAMETER
TEST SETUP
SYMBOL
TYP.
MAX
UNIT
48
60
24
30
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
DESCRIPTION
Input
Address
CIN
VIN = 0
Capacitance
pF
Data
COUT
Output Capacitance
CIN2
Control Pin
/CE
Capacitance
/WE
30
36
/OE
60
72
Notes: Test conditions TA = 25o C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
JEDEC
STANDARD
tAVAV
tRC
tAVQV
tACC
DESCRIPTION
-80
-90
(NOTE1)
(NOTE1)
Min
80
90
ns
Max
80
90
ns
TEST SETUP
Read Cycle Time
UNIT
/CE = VIL
Address to Output Delay
/OE = VIL
URL: www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
HMF8M16F8V-90
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
tEHQZ
/OE = VIL
Max
80
90
ns
Chip Enable to Output Delay
Max
80
90
ns
tDF
Chip Enable to Output High-Z
Max
25
30
ns
tGHQZ
tDF
Output Enable to Output High-Z
Max
25
30
ns
tAXQX
tQH
Min
0
0
ns
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
TEST CONDITIONS
Notes : Test Conditions : Output Load : 1TTL gate and 100 pF
Input rise and fall times : 5 ns
Input pulse levels: 0V to 3.0V
Timing measurement reference level
Input : 1.5 V
Output : 1.5V
3.3V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
URL: www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
HANBit
HMF8M16F8V-90
u Erase/Program Operations
PARAMETER SYMBOLS
DESCRIPTION
-80
-90
UNIT
Min
80
90
ns
Address Setup Time
Min
0
0
ns
tAH
Address Hold Time
Min
45
45
ns
tDVWH
tDS
Data Setup Time
Min
35
45
ns
tWHDX
tDH
Data Hold Time
Min
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
ns
Read Recover Time Before Write
Min
0
0
ns
JEDEC
STANDARD
tAVAV
tWC
Write Cycle Time
tAVWL
tAS
tWLAX
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
Min
0
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
35
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
30
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
9
9
µs
Typ
0.7
0.7
sec
tWHWH2
tWHWH2
Sector Erase Operation
Max
50
50
sec
tVCS
Vcc Setup Time
Min
50
50
µs
tRB
Recovery time from RY/BY
Min
0
0
µs
Program/Erase Valid to RY/BY Delay
Min
90
90
µs
-80
-90
UNIT
tBUSY
u Alternate /CE Controlled Erase/Program Operations
PARAMETER SYMBOLS
DESCRIPTION
JEDEC
STANDARD
tAVAV
tWC
Write Cycle Time
Min
80
90
ns
tAVEL
tAS
Address Setup Time
Min
0
0
ns
tELAX
tAH
Address Hold Time
Min
45
45
ns
tDVEH
tDS
Data Setup Time
Min
35
45
ns
tEHDX
tDH
Data Hold Time
Min
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
ns
Min
0
0
ns
Read Recover Time Before Write
tGHEL
tGHEL
/OE High to /WE Low
tWLEL
tWS
/WE Setup Time
Min
0
0
ns
tEHWH
tWH
/WE Hold Time
Min
0
0
ns
URL: www.hbe.co.kr
REV.02(August,2002)
6
HANBit Electronics Co., Ltd.
HANBit
HMF8M16F8V-90
tELEH
tCP
/CE Pulse Width
Min
35
35
ns
tEHEL
tCPH
/CE Pulse Width High
Min
30
30
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
9
9
µs
tWHWH2
tWHWH2
Sector Erase Operation
Typ
0.7
0.7
sec
URL: www.hbe.co.kr
REV.02(August,2002)
7
HANBit Electronics Co., Ltd.
HANBit
HMF8M16F8V-90
u READ OPERATIONS TIMING
u RESET TIMING
URL: www.hbe.co.kr
REV.02(August,2002)
8
HANBit Electronics Co., Ltd.
HANBit
HMF8M16F8V-90
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr
REV.02(August,2002)
9
HANBit Electronics Co., Ltd.
HANBit
HMF8M16F8V-90
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr
REV.02(August,2002)
10
HANBit Electronics Co., Ltd.
HANBit
HMF8M16F8V-90
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr
REV.02(August,2002)
11
HANBit Electronics Co., Ltd.
HANBit
HMF8M16F8V-90
PACKAGE DIMMENSIONS
UNIT: mm
(TOP Dimension)
1.20
3.25
5.00
Main Board
-Connector
Part No. HMF8M16F8V-90
Top: 50-pin 0.6mm Pitch Free Height Plugs, AMP Part No. 316076-3
Bottom: 50-pin 0.6mm Pitch Free Height Receptacles, AMP Part No. 316077-3
URL: www.hbe.co.kr
REV.02(August,2002)
12
HANBit Electronics Co., Ltd.
HANBit
HMF8M16F8V-90
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF8M16F8V-90
16MByte
8MX 16bit
100 Pin-SMM
URL: www.hbe.co.kr
REV.02(August,2002)
13
Component
Number
8EA
Vcc
SPEED
3.3V
90ns
HANBit Electronics Co., Ltd.