HANBit HMF1M32F8 Flash-ROM Module 4MByte (1Mx32Bit), 100Pin-MMC, 5.5V Design Part No. HMF1M32F8 GENERAL DESCRIPTION The HMF1M32F8 is a high-speed flash read only memory (FROM) module containing 1,048,576 words organized in a x32bit configuration. The module consists of eight 512K x 8 FROM mounted on a 100-pin stackable type, double -sided, FR4printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2 , /CE_LL2) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL compatible. PIN ASSIGNMENT FEATURES w Access time: 55, 70, 90, 120ns w High-density 4MByte design P1 P2 PIN Symbol PIN w High-reliability, low-power design 1 Vcc 26 w Single + 5V ± 0.5V power supply 2 NC 27 3 /CE_LL1 28 4 /CE_LM1 29 w All in/outputs are TTL-compatible 5 DQ15 w FR4-PCB design 6 DQ14 w 100-pin Designed by 7 8 w Easy memory expansion 50-pin Fine Pitch Connector Symbol PIN Symbol PIN Symbol Vcc 51 Vcc 76 Vcc /CE_LL2 52 NC 77 /CE_UM2 /CE_LM2 53 /CE_UM1 78 /CE_UU2 A18 54 /CE_UU1 79 DQ22 30 A17 55 DQ31 80 DQ21 31 A16 56 DQ30 81 DQ20 DQ13 32 A15 57 DQ29 82 DQ19 Vss 33 Vss 58 Vss 83 Vss 9 DQ12 34 A14 59 /OE 84 DQ18 10 DQ11 35 A13 60 /WE 85 DQ17 w Sector erases architecture 11 DQ10 36 DQ9 61 NC 86 DQ16 w Sector group protection 12 DQ8 37 DQ7 62 NC 87 NC w Temporary sector group unprotection 13 Vss 38 Vss 63 Vss 88 Vss 14 DQ6 39 DQ5 64 NC 89 NC 15 DQ4 40 A12 65 NC 90 NC 16 DQ3 41 A11 66 DQ28 91 NC 17 DQ2 42 A10 67 DQ27 92 NC 18 Vss 43 Vss 68 Vss 93 Vss 19 DQ1 44 A9 69 DQ26 94 NC 20 DQ0 45 A8 70 DQ25 95 NC 21 A0 46 A7 71 DQ24 96 NC 22 A1 47 A6 72 DQ23 97 NC 23 A2 48 A5 73 Vss 98 Vss 24 A3 49 A4 74 NC 99 NC 25 Vcc 50 Vcc 75 Vcc 100 Vcc w Minimum 1,000,000 write/erase cycle OPTIONS MARKING w Timing 55ns access -55 70ns access -70 90ns access -90 120ns access -120 w Packages 100-pin SMM URL: www.hbe.co.kr REV.02 (August,2002) F 1 HANBit Electronics Co., Ltd. HANBit HMF1M32F8 FUNCTIONAL BLOCK DIAGRAM 32 DQ 0-DQ31 A0-18 19 A0-A18 A0-18 A0-18 DQ0-7 /WE DQ0-7 DQ0-7 /WE U1 /OE DQ0-7 U5 /OE /CE /CE /CE-LL2 /CE-LL1 A0-18 /WE A0-18 DQ8-15 DQ0-7 /WE U2 /OE /CE /CE-LM2 /CE-LM1 A0-18 A0-18 DQ16-23 DQ0-7 DQ 0-7 /WE /WE U3 /OE /CE /CE-UM2 /CE-UM1 A0-18 DQ0-7 /WE U4 /OE A0-18 DQ24-31 /WE /OE URL: www.hbe.co.kr REV.02 (August,2002) DQ24-31 DQ0-7 /WE U8 /OE /CE /CE /CE-UU1 DQ16-23 U7 /OE /CE /OE U6 /OE /CE /WE DQ8-15 DQ0-7 /CE-UU2 2 HANBit Electronics Co., Ltd. HANBit HMF1M32F8 TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Q ACTIVE WRITE or ERASE X L L D ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -2.0V to +7.0V Voltage with respect to ground Vcc VCC -2.0V to +7.0V Power Dissipation PD 8W TSTG -65oC to +125oC Voltage with respect to ground all other pins Storage Temperature Operating Temperature TA -55oC to +125oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for ±5% device Supply Voltages VCC 4.75V 5.25V Vcc for ± 10% device Supply Voltages Vcc 4.5V 5.5V Ground VSS 0 PARAMETER TYP. MAX 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS Input Load Current Vcc=Vcc max, VIN= VSS to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= VSS to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.5mA, Vcc = Vcc min VOH Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL 0.45 V Vcc Active Current for Read(1) Vcc Active Current for Program or Erase(2) /CE = VIL, /OE=VIH, ICC1 30 mA /CE = VIL, /OE=VIH ICC2 40 mA Vcc Standby Current /CE= VIH ICC3 1.0 mA 4.2 V Low Vcc Lock-Out Voltage URL: www.hbe.co.kr REV.02 (August,2002) VLKO 3 2.4 3.2 V HANBit Electronics Co., Ltd. HANBit HMF1M32F8 Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. MAX. Sector Erase Time - 1 8 sec Byte Programming Time - 7 300 µs Chip Programming Time - 3.6 10.8 sec COMMENTS Excludes 00H programming prior to erasure Excludes system-level overhead Excludes system-level overhead CAPACITANCE PARAMETER DESCRIPTION PARAMETER SYMBOL CIN TEST SETUP TYP. MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD TAVAV tRC Speed Options TEST SETUP Read Cycle Time UNIT -55 -70 -90 -120 Min 55 70 90 120 ns Max 55 70 90 120 ns Max 55 70 90 120 ns TAVQV tACC Address to Output Delay /CE = VIL /OE = VIL TELQV tCE Chip Enable to Output Delay /OE = VIL TGLQV tOE Output Enable to Output Delay Max 30 30 35 50 ns TEHQZ tDF Chip Enable to Output High-Z Max 18 20 20 30 ns TGHQZ tDF 18 20 20 30 ns TAXQX tQH Output Enable to Output High-Z Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First 0 0 0 0 ns Notes Min : Test Conditions Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF Input rise and fall times : 5 ns, In case of 55ns-5ns Input pulse levels : 0.45V to 2.4V, In case of 55ns- 0.0V-3.0V URL: www.hbe.co.kr REV.02 (August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF1M32F8 Timing measurement reference level Input : 0.8V, Incase of 55ns-1.5V Output : 2.0V, In case of 55ns-1.5V 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Erase/Program Operations PARAMETER SYMBOLS Speed Options DESCRIPTION UNIT JEDEC STANDARD TAVAV tWC Write Cycle Time Min TAVWL tAS Address Setup Time Min TWLAX tAH Address Hold Time Min 40 45 45 50 ns TDVWH tDS Data Setup Time Min 25 30 45 50 ns TWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns tGHWL Read Recover Time Before Min 0 ns TGHWL -55 -70 -90 -120 55 70 90 120 0 ns ns Write TELWL tCS /CE Setup Time Min 0 ns TWHEH tCH /CE Hold Time Min 0 ns TWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 sec Vcc set up time Min 50 µs tVCS URL: www.hbe.co.kr REV.02 (August,2002) 5 30 35 45 50 ns HANBit Electronics Co., Ltd. HANBit HMF1M32F8 Notes : 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. u Erase/Program Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS UNIT DESCRIPTION JEDEC STANDARD -55 -70 -90 -120 ns tAVAV tWC Write Cycle Time Min 55 70 90 120 ns tAVEL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 40 45 45 50 ns tDVEH tDS Data Setup Time Min 25 30 45 50 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recover Time Before Min 0 ns 0 ns Write tWLEL tWS /CE Setup Time Min 0 ns tEHWH tWH /CE Hold Time Min 0 ns tELEH tCP Write Pulse Width Min 30 35 45 50 ns tEHEL tCPH Write Pulse Width High Min 20 20 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note) Typ 1 sec Notes : 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. URL: www.hbe.co.kr REV.02 (August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF1M32F8 u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02 (August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF1M32F8 u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02 (August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF1M32F8 u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02 (August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF1M32F8 u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02 (August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF1M32F8 PACKAGE DIMENSIONS ORDERING INFORMATION Part Number Density Org. HMF1M32F8-55 4MByte 1Mx 32 HMF1M32F8-70 4MByte 1Mx 32 HMF1M32F8-90 4MByte 1Mx 32 HMF1M32F8-120 4MByte 1Mx 32 URL: www.hbe.co.kr REV.02 (August,2002) Package 100 PinSMM 100 PinSMM 100 PinSMM 100 PinSMM 11 Component Number Vcc SPEED 8EA 5.0V 55ns 8EA 5.0V 70ns 8EA 5.0V 90ns 8EA 5.0V 120ns HANBit Electronics Co., Ltd.