VBH 40-05B Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge VDSS = 500 V Ω RDSon = 116 mΩ Preliminary VRRM = 1200 V IDAV25 = 90 A Mains Rectifier Bridge D1 - D4 Application Symbol Conditions Maximum Ratings VRRM 1200 V 45 33 A A 400 A IFAV25 IFAV80 TC = 25°C; sine 180° TC = 80°C; sine 180° IFSM TVJ = 25°C; t = 10 ms sine 50 Hz Symbol Conditions VF IF = 20 A TVJ = 25°C TVJ = 125°C 1.1 1.0 IR VR = VRRM TVJ = 25°C TVJ = 125°C RthJC RthJS primary side of mains supplied • welding converters • switched mode power supplies • induction heaters Features Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. (per diode) with heat transfer paste 1.2 V V 0.02 0.4 mA mA 2.8 1.42 K/W K/W • H-bridge with HiPerFETTM technology: - low RDSon - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode - Kelvin source for easy drive - low inductive, symmetrical current paths • thermistor for internal temperature measurement 206 • package: - high level of integration - only one power semiconductor module required for the whole primary side - solder terminals for PCB mounting - isolated DCB ceramic base plate IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-3 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 VBH 40-05B MOSFET H - Bridge T1 - T4 Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 500 V ±20 V ID25 ID80 TC = 25°C TC = 80°C 40 30 A A IF25 IF80 (diode) TC = 25°C (diode) TC = 80°C 40 30 A A Symbol Conditions RDSon VGS = 10 V; ID = ID80 VGSth VDS = 20 V; ID = 8 mA IDSS VDS = 0.8 • VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C IGSS Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 116 mΩ 2 4 V 0.4 mA mA 0.2 µA 0.5 VGS = ±20 V; VDS = 0 V Qg Qgs Qgd VGS= 10 V; VDS = 0.5 • VDSS; ID = 20A 270 56 124 nC nC nC td(on) tr td(off) tf VGS= 10 V; VDS = 0.5 • VDSS; ID = 20A; RG = 1 Ω 50 100 100 80 ns ns ns ns VF (diode) IF = 20 A; VGS = 0 V 1.5 V trr (diode) IF = 40 A; -di/dt = 200 A/µs; VDS = 100V 300 ns RthJC RthJS with heat transfer paste 0.47 0.32 K/W K/W Temperature Sensor NTC Symbol Conditions R25 B25/100 T = 25°C © 2001 IXYS All rights reserved Characteristic Values min. typ. max. 1950 2057 3560 2170 Ω K 2-3 VBH 40-05B Module Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 min Md Mounting torque (M5) Symbol Conditions dS dA Creepage distance on surface Strike distance through air Weight typ. -40...+150 -40...+125 °C °C 3000 V~ 2 - 2.5 Nm Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 8 8 mm mm 80 g Dimensions in mm (1 mm = 0.0394") © 2001 IXYS All rights reserved 3-3