Dual Power MOSFET Modules VMM 15-045 VDSS = 450 V = 20 A = 0.2 Ω ID25 RDS(on) 7 3 4 N-Channel Enhancement Mode 8 6 2 1 5 1 4 2 3 5 Symbol Test Conditions VDSS TJ = 25°C to 150°C 450 V VDGR TJ = 25°C to 150°C; R GS = 20 kΩ 450 V V GS Continuous ±20 V V GSM Transient ±30 V I D25 T K = 25°C 20 A I D85 T K = 85°C 16 A I DM T K = 25°C, tp = 10 µs 80 A PD T K = 25°C 175 W -40 ... +150 °C 150 °C Tstg -40 ... +125 °C TJ 1, 4 = Gate, 5, 8 = Drain 6, 7 = Source, 2, 3 Kelvin Source Features ● ● 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Mounting torque (M5) (10-32 UNF) 3000 3600 V~ V~ 2-2.5 18-22 Nm lb.in. 28 g ● ● ● Md ● ● Weight 7 8 Maximum Ratings per switch TJM VISOL 6 typ. 2 independent MOSFET in 1 package Package with DCB ceramic base plate Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin contact for easy drive UL registered E 72873 Applications Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. ● ● ● VDSS VGS = 0 V, I D = 0.5 mA 450 VGS(th) V DS = VGS , ID = 5 mA 2.0 I GSS VGS = ±20 V DC, VDS = 0 I DSS V DS = VDSS , VGS = 0 V, TJ = 25°C V DS = 0.8 • VDSS, VGS = 0 V, TJ = 125°C RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % V 5.5 V ● AC motor speed control for electric vehicles DC servo and robot drives Switched-mode and resonant-mode power supplies DC choppers ±500 nA 0.5 mA 3 mA 0.18 0.2 Ω Advantages ● ● ● ● Easy to mount with two screws Space and weight savings High power density Low losses IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670 IXYS Semiconductor Edisonstr. 15, D-68623 Lampertheim, Germany Tel: +49-6206-5030 Fax: +49-6206-503629 VMM 15-045 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 15 V; ID = 0.5 • ID25 pulsed Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 15 Ω (External), resistive load tf Qg Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 18 S 5600 pF 800 pF 200 pF 25 ns 45 ns 250 ns 75 ns 110 nC 15 nC 40 nC RthJK with 30 µm heat transfer paste dS Creepage distance on surface 17 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 Source-Drain Diode 0.7 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 20 A I SM Repetitive; pulse width limited by TJM 80 A VSD IF = IS; VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = IS, -di/dt = 200 A/µs, VDS = 100 V 600 ns IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Dimensions in mm (1 mm = 0.0394")