POIN T NINE D1014 D1014 TetraFET TetraFET Te c h n o l o g i e s , I n c . 20W - 28V - 500MHz GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET FEATURES • METAL GATE • • • • • ABSOLUTE MAXIMUM RATINGS EXTRA LOW Crss BROAD BAND SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN (TCASE = 25°C unless otherwise stated) PD BVDSS VGSS ID Tstg Tj APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 500MHz Power Dissipation Drain-source breakdown voltage Gate-source breakdown voltage Drain Current Storage temperature Maximum operating junction temperature RTHj-case Thermal resistance junction-case 87.5W 70V ±20V 5A -65 to 150°C 200°C Max. 2.0°C/W ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated) Parameter Test Conditions BVDSS IDSS IGSS VGS(th) gfs Breakdown voltage, drain source Drain leakage current Gate leakage current Gate threshold voltage Transconductance (300µs pulse) GPS η VSWR Common source power gain Drain efficiency Load mismatch tolerance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VGS=0 VDS=28V VGS=20V ID=10mA VDS=10V Min. Typ. Max. ID=100mA VGS=0 VDS=0 VDS=VGS ID=2A 70 1 1.6 PO =20W VDS=28V IDQ=0.2A f=400MHz VDS=0V VDS=28V VDS=28V VGS=-5V VGS=0 VGS=0 2 1 7 13 60 20:1 f=1MHz f=1MHz f=1MHz Unit Vdc mAdc µAdc Vdc Mhos dB % 120 50 5 pF pF pF DIMENSIONS C F A B D H J M K G I DM A B C D E F G H I J K M Millimeter 16.51 6.35 1.52 3.30 18.90 1.27 X 45° 2.16 14.22 1.52 6.35 0.10 5.08 TOL Inches .25 .650 .13 .250 .13 .060 .13 .130 .13 .744 .13 .05 X 45° .13 .085 .05 .560 .13 .060 .13 .250 .02 .004 MAX .200 TOL .010 .005 .005 .005 .005 .005 .005 .005 .005 .005 .001 MAX HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. U.S. PATENTS 5,121,176 & 5,179,032 GLOBAL PATENTS PENDING E 2697 Lavery Court #8 • Newbury Park, CA 91320 • (805) 375-6600 • Fax: (805) 375- 6602 • www.point9.com • www.rfmosfet.com POIN T NINE Te c h n o l o g i e s , Inc. D1014 TetraFET 2697 Lavery Court #8 • Newbury Park, CA 91320 • (805) 375-6600 • Fax: (805) 375-6602 • www.point9.com • www.rfmosfet.com POIN T NINE Te c h n o l o g i e s , Inc. D1014 TetraFET 2697 Lavery Court #8 • Newbury Park, CA 91320 • (805) 375-6600 • Fax: (805) 375-6602 • www.point9.com • www.rfmosfet.com *D1014 *PSPICE MODEL FOR POINT NINE TECHNOLOGIES, Inc RF N-CHANNEL VERTICAL DMOS POWER FET *PRELIMINARY DATA, SEPTEMBER 1995 *TO GENERATE S PARAMETERS MATCHING DATA SHEET, SET VG=3.2V FOR IDQ=1A * ____GATE * I ____DRAIN * I I * I I I .SUBCKT D1014 10 20 LG 10 11 1.71N RGATE 11 12 0.78 CG 10 30 0.05P CRSS 12 17 2.5P CISS 12 14 60P LS 14 30 0.30N CS 14 30 0.1P LD 17 20 0.85N CD 20 30 1.44P R_RC 16 17 35.73 C_RC 14 16 11.8P MOS 13 12 14 15 D1014MOS JFET 17 14 13 D1014JF ;D G S DBODY 14 17 D1014DB ;P N ____SOURCE 30 L=0.71U W=0.056332 ;D G S B LEVEL1 .MODEL D1014MOS NMOS (VTO=2.2 KP=1.8E-5 LAMBDA=0.1 .MODEL D1014JF NJF (VTO=-7.5 BETA=0.04 LAMBDA=1) RD=0.25 RS=0.5) .MODEL D1014DB D (CJO=88.5P RS=0.25 VJ=0.7 M=0.33 BV=70) .ENDS D1014.s2p ! Vds=28V, Idq=1A # MHz S MA R 50 !Freq S11 !MHz mag ang mag ang mag ang mag ang 100 0.794 -158 14.622 69 0.0115 -7 0.61 -145 200 0.881 -167 5.821 42 0.0061 3 0.794 -156 300 0.923 -171 3.02 28 0.0068 60 0.871 -162 400 0.923 -176 1.82 18 0.117 77 0.902 -167 500 0.937 -179 1.439 15 0.0168 76 0.923 -169 600 0.952 177 1.057 13 0.0234 75 0.945 -171 700 0.966 174 0.676 10 0.0285 74 0.966 -174 800 0.966 171 0.543 5 0.0335 69 0.955 -177 900 0.977 167 0.447 1 0.0394 64 0.966 178 1000 0.966 165 0.359 1 0.0432 64 0.955 178 S21 S12 S22 2697 Lavery Court #8 • Newbury Park, CA 91320 • (805) 375-6600 • Fax: (805) 375- 6602 • www.point9.com • www.rfmosfet.com