HMC498LC4 v02.1208 LINEAR & POWER AMPLIFIERS - SMT 11 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Output IP3: +36 dBm • Point-to-Point Radios Gain: 22 dB • Point-to-Multi-Point Radios & VSAT +5V @ 250 mA Supply • Test Equipment & Sensors 50 Ohm Matched Input/Output • Military End-Use RoHS Compliant 4x4 mm SMT Package Functional Diagram General Description Saturated Power: +26 dBm @ 23% PAE The HMC498LC4 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless “Pb free” SMT package. Operating from 17 to 24 GHz, the amplifier provides 22 dB of gain, +26 dBm of saturated power and 23% PAE from a +5V supply voltage. Noise figure is 4 dB while output IP3 is +36 dBm typical enabling the HMC498LC4 to function as a low noise front end as well as a driver amplifier. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC498LC4 eliminates the need for wire bonding, allowing use of surface mount manufacturing techniques. Electrical Specifi cations, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 250 mA* Parameter Min. Frequency Range Gain 18 Gain Variation Over Temperature Min. 20 0.03 25 Max. Min. 18 0.03 22.5 dB 0.03 dB/ °C dB 20 dB 25.5 dBm 26.5 25.5 26.5 dBm Output Third Order Intercept (IP3) 35 36 35.5 dBm Noise Figure 4.0 4.0 4.5 dB Supply Current (Idd)(Vdd = +5V, Vgg = -0.8V Typ.) 250 250 250 mA * Adjust Vgg between -2 to 0V to achieve Idd = 250 mA typical. 11 - 282 Units GHz 10 15 24.5 Max. 21 0.02 13 21.5 Typ. 23 - 24 22.5 0.02 15 22 Typ. 19 - 23 13 Output Return Loss Saturated Output Power (Psat) Max. 22 0.02 Input Return Loss Output Power for 1 dB Compression (P1dB) Typ. 17 - 19 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC498LC4 v02.1208 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Broadband Gain & Return Loss Gain vs. Temperature 26 25 15 -5 18 -25 10 12 14 16 18 20 22 24 26 16 28 17 18 FREQUENCY (GHz) 19 20 21 22 23 24 25 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 -5 +25 C +85 C -40 C -5 RETURN LOSS (dB) RETURN LOSS (dB) 11 +25 C +85 C -40 C 14 -15 -10 -15 +25 C +85 C -40 C -10 -15 -20 -20 -25 16 17 18 19 20 21 22 23 24 25 16 17 18 FREQUENCY (GHz) 21 22 23 24 25 23 24 25 Psat vs. Temperature 30 30 26 26 Psat (dBm) P1dB (dBm) 20 FREQUENCY (GHz) P1dB vs. Temperature 22 +25 C +85 C -40 C 18 19 14 LINEAR & POWER AMPLIFIERS - SMT 5 GAIN (dB) RESPONSE (dB) 22 S21 S11 S22 22 +25 C +85 C -40 C 18 14 10 10 16 17 18 19 20 21 22 FREQUENCY (GHz) 23 24 25 16 17 18 19 20 21 22 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 283 HMC498LC4 v02.1208 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Output IP3 vs. Temperature Noise Figure vs. Temperature 40 10 9 +25 C 8 NOISE FIGURE (dB) 11 IP3 (dBm) 36 32 +25 C +85 C -40 C 28 24 +85 C -40 C 7 6 5 4 3 2 0 16 17 18 19 20 21 22 24 25 16 17 18 19 21 22 23 24 25 24 25 Reverse Isolation vs. Temperature 40 0 -10 36 32 ISOLATION (dB) Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 20 FREQUENCY (GHz) Gain, Power & OIP3 vs. Supply Voltage @ 23 GHz Gain P1dB Psat IP3 28 -20 +25 C +85 C -40 C -30 -40 -50 24 -60 20 4.5 5 -70 5.5 16 17 18 19 Vdd Supply Voltage (Vdc) 20 21 22 23 FREQUENCY (GHz) Power Compression @ 18 GHz Power Compression @ 23 GHz 30 Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 Pout (dBm) Gain (dB) PAE (%) 5 0 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) 11 - 284 23 FREQUENCY (GHz) Pout (dBm), GAIN (dB), PAE (%) LINEAR & POWER AMPLIFIERS - SMT 1 20 4 6 8 10 25 20 15 10 Pout (dBm) Gain (dB) PAE (%) 5 0 -10 -8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 10 HMC498LC4 Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc Gate Bias Voltage (Vgg) -4.0 to 0 Vdc GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Typical Supply Current vs. Vdd Vdd (Vdc) Idd (mA) +4.5 239 RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm +5.0 250 Channel Temperature 175 °C +5.5 262 Continuous Pdiss (T= 85 °C) (derate 18 mW/°C above 85 °C) 1.62 W Thermal Resistance (channel to ground paddle) 55.6 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Note: Amplifi er will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 250 mA at +5V. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing 11 LINEAR & POWER AMPLIFIERS - SMT v02.1208 NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA. 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER NICKEL. 3. DIMENSIONS ARE IN INCHES (MILLIMETERS). 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN. 6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C – 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 285 HMC498LC4 v02.1208 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Pin Descriptions LINEAR & POWER AMPLIFIERS - SMT 11 11 - 286 Pin Number Function Description 1, 5 - 8, 10 - 14, 18, 20, 22, 24 N/C No connection required. These pins may be connected to RF/DC ground without affecting performance. 2, 4, 15, 17 GND Package bottom has an exposed metal paddle that must also be connected to RF/DC ground. 3 RFIN This pin is AC coupled and matched to 50 Ohms. 9 Vgg Gate control for amplifier. Adjust to achieve Id of 250 mA. Please follow “MMIC Amplifier Biasing Procedure” Application Note. External bypass capacitors of 100 pF, 1000 pF and 2.2 μF are required. 16 RFOUT This pin is AC coupled and matched to 50 Ohms. 23, 21, 19 Vdd1, Vdd2, Vdd3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 μF are required. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC498LC4 v02.1208 GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz Evaluation PCB List of Materials for Evaluation PCB 108537 [1] Item J1, J2 Description 2.92 mm PC mount K-connector J3 - J8 DC Pin C1 - C4 100 pF capacitor, 0402 pkg. C5 - C8 1,000 pF Capacitor, 0603 pkg. C9 - C12 2.2μF Capacitor, Tantalum U1 HMC498LC4 Amplifier PCB [2] 108535 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMT 11 11 - 287