2N7002E N-channel TrenchMOS™ FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features ■ Logic level threshold compatible ■ Surface-mounted package ■ Very fast switching ■ TrenchMOS™ technology 1.3 Applications ■ Logic level translator ■ High speed line driver 1.4 Quick reference data ■ VDS ≤ 60 V ■ RDSon ≤ 3 Ω ■ ID ≤ 385 mA ■ Ptot = 0.83 W 2. Pinning information Table 1: Pinning Pin Description 1 gate (G) 2 source (S) 3 drain (D) Simplified outline Symbol D 3 G 1 2 SOT23 mbb076 S 2N7002E Philips Semiconductors N-channel TrenchMOS™ FET 3. Ordering information Table 2: Ordering information Type number 2N7002E Package Name Description Version TO-236AB plastic surface mounted package; 3 leads SOT23 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C - 60 V VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ - 60 V VGS gate-source voltage (DC) - ±30 V VGSM peak gate-source voltage tp ≤ 50 µs; pulsed; duty cycle = 25 % - ±40 V ID drain current (DC) Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 - 385 mA Tsp = 100 °C; VGS = 10 V; Figure 2 - 245 mA A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 1.5 Tsp = 25 °C; Figure 1 Ptot total power dissipation - 0.83 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C - 385 mA ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs - 1.5 A 9397 750 14944 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 26 April 2005 2 of 11 2N7002E Philips Semiconductors N-channel TrenchMOS™ FET 03aa17 120 03aa25 120 Ider (%) Pder (%) 80 80 40 40 0 0 0 50 100 150 Tsp (°C) 200 0 P tot P der = ------------------------ × 100 % P ° 50 100 150 Tsp (°C) 200 ID I der = --------------------- × 100 % I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of solder point temperature Fig 2. Normalized continuous drain current as a function of solder point temperature 03ai10 10 ID (A) tp = 10 µ s Limit RDSon = VDS / ID 1 100 µ s 1 ms 10-1 DC 10 ms 100 ms 10-2 1 10 VDS (V) 102 Tsp = 25 °C; IDM is single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9397 750 14944 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 26 April 2005 3 of 11 2N7002E Philips Semiconductors N-channel TrenchMOS™ FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point Figure 4 - - 150 K/W Rth(j-a) thermal resistance from junction to ambient mounted on a printed-circuit board; minimum footprint; vertical in still air - - 350 K/W 03ai09 103 Zth(j-sp) K/W 102 δ = 0.5 0.2 0.1 10 0.05 0.02 δ= P 1 single pulse t tp 10-1 10-5 tp T T 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration 9397 750 14944 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 26 April 2005 4 of 11 2N7002E Philips Semiconductors N-channel TrenchMOS™ FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Tj = 25 °C 60 - - V Tj = −55 °C 55 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS gate-source threshold voltage drain-source leakage current ID = 10 µA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 °C 1 2 3 V Tj = 150 °C 0.6 - - V Tj = −55 °C - - 3.5 V Tj = 25 °C - 0.01 1 µA Tj = 150 °C - - 10 µA - 10 100 nA Tj = 25 °C - 2.3 3 Ω Tj = 150 °C - 4.2 5.55 Ω VGS = 4.5 V; ID = 75 mA; Figure 6 and 8 - 3.1 4 Ω VDS = 48 V; VGS = 0 V IGSS gate-source leakage current VGS = ±15 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 10 V; ID = 500 mA; Figure 6 and 8 Dynamic characteristics gfs forward transconductance VDS = 10 V; ID = 200 mA 100 300 - mS Ciss input capacitance - 25 40 pF Coss output capacitance VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11 - 18 30 pF Crss reverse transfer capacitance - 7.5 10 pF ton turn-on delay time toff turn-off delay time VDD = 50 V; RL = 250 Ω; VGS = 10 V; RG = 50 Ω; RGS = 50 Ω - 3 10 ns - 12 15 ns 0.85 1.5 V Source-drain diode VSD source-drain (diode forward) voltage IS = 300 mA; VGS = 0 V; Figure 12 - trr reverse recovery time 30 - ns recovered charge IS = 300 mA; dIS/dt = −100 A/µs; VGS = 0 V - Qr - 30 - nC 9397 750 14944 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 26 April 2005 5 of 11 2N7002E Philips Semiconductors N-channel TrenchMOS™ FET 1 ID (A) 03ai12 Tj = 25 °C 10 VGS (V) = 7 3.5 VGS (V) = 5 RDSon (Ω) 4.5 4 0.8 03ai14 6 6 Tj = 25 °C 4 4.5 5 0.6 6 4 7 10 0.4 3.5 2 3 0.2 2.5 0 0 0 0.8 1.6 2.4 VDS (V) 3.2 0 Tj = 25 °C 0.2 0.4 0.6 0.8 ID (A) 1 Tj = 25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 03ai16 0.8 Fig 6. Drain-source on-state resistance as a function of drain current; typical values 03aa28 2.4 ID (A) a 1.8 0.6 150 °C Tj = 25 °C 0.4 1.2 0.2 0.6 0 0 2 4 VGS (V) 6 0 -60 Tj = 25 °C and 150 °C; VDS > ID × RDSon 60 120 Tj (°C) 180 R DSon a = ----------------------------R DSon ( 25 °C ) Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 9397 750 14944 Product data sheet 0 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 26 April 2005 6 of 11 2N7002E Philips Semiconductors N-channel TrenchMOS™ FET 03aa34 2.4 03aa37 10-1 ID (A) VGS(th) (V) typ 10-2 1.8 10-3 min 1.2 min typ 10-4 0.6 10-5 0 -60 10-6 0 60 120 Tj (°C) 0 180 0.6 1.2 1.8 VGS (V) 2.4 Tj = 25 °C; VDS = 5 V ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature 03ai18 102 Fig 10. Sub-threshold drain current as a function of gate-source voltage 03ai17 0.8 IS (A) C (pF) 0.6 Ciss 10 1 10-1 1 10 Coss 0.4 Crss 0.2 VDS (V) 150 °C 102 0 0 0.4 0.8 VSD (V) 1.2 Tj = 25 °C and 150 °C; VGS = 0 V VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 9397 750 14944 Product data sheet Tj = 25 °C © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 26 April 2005 7 of 11 2N7002E Philips Semiconductors N-channel TrenchMOS™ FET 7. Package outline Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC SOT23 JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-11-04 TO-236AB Fig 13. Package outline SOT23 9397 750 14944 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 26 April 2005 8 of 11 2N7002E Philips Semiconductors N-channel TrenchMOS™ FET 8. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes 2N7002E_2 20050426 Product data sheet - 9397 750 14944 2N7002E-01 Modifications: 2N7002E-01 • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Table 5 “Characteristics” Addition of upper limit for VGS(th). 20020211 Product data - 9397 750 14944 Product data sheet 9397 750 09095 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 26 April 2005 9 of 11 2N7002E Philips Semiconductors N-channel TrenchMOS™ FET 9. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14944 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 02 — 26 April 2005 10 of 11 2N7002E Philips Semiconductors N-channel TrenchMOS™ FET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 April 2005 Document number: 9397 750 14944 Published in The Netherlands