TG2213S TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2213S RF SPDT Switch Unit: mm Antenna switch for Bluetooth class 2, 3 Diversity antenna switching Filter switching for mobile communication Local signal switching Features · Low insertion Loss: LOSS = 0.35dB (typ.) @1.0 GHz · High isolation: ISL = 24dB (typ.) @1.0 GHz · Low voltage operation: VCON = 0 V/2.7 V · Small package: sES6 package (1.5 × 1.5 × 0.52 mm) = 0.45dB (typ.) @2.5 GHz = 22dB (typ.) @2.5 GHz Pin Assignment, Marking Block Diagram (top view) VC1 6 RFcom 5 VC2 4 VC1 6 RFcom 5 VC2 4 JEDEC ― JEITA ― TOSHIBA UP 1 RF1 2 GND 2-2Q1A Weight: 2.1 mg (typ.) 3 RF2 1 RF1 2 GND 3 RF2 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating VC1 6 VC2 6 Input power Pi 200 mW Total power dissipation PD (Note) 100 mW Control voltage Unit V Operating temperature range Topr −40 to 85 °C Storage temperature range Tstg −55 to 125 °C 2 Note: When mounted on the glass epoxy of 2.5 cm ´ 1.6 t 1 2002-11-14 TG2213S Electrical Characteristics (VCON(Hi) = 2.7 V, VCON(LO) = 0 V, Ta = 25°C, Zg = Zl = 50 W) Characteristics Symbol Test Circuit LOSS (1) 1 LOSS (2) Min Typ. Max f = 1.0 GHz, Pi = 0dBmW ¾ 0.35 0.65 1 f = 2.0 GHz, Pi = 0dBmW ¾ 0.40 0.70 LOSS (3) 1 f = 2.5 GHz, Pi = 0dBmW ¾ 0.45 0.75 ISL (1) 1 f = 1.0 GHz, Pi = 0dBmW 20 24 ¾ ISL (2) 1 f = 2.0 GHz, Pi = 0dBmW 20 24 ¾ ISL (3) 1 f = 2.5 GHz, Pi = 0dBmW 18 22 ¾ Input power at 1dB gain compression Pi1dB 1 f = 2.5 GHz 12 17 ¾ dBmW Control current ICON ¾ no RF signal input ¾ ¾ 0.01 mA Switching time tsw 1 ¾ 50 200 ns Insertion loss Isolation Test Condition Unit dB dB Switch Connection VC1 VC2 Switch Condition RFcom – RF1 RFcom – RF2 ON OFF OFF ON RF2 Hi Low RFcom RF1 RF2 Low Hi RFcom RF1 Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. 2 2002-11-14 TG2213S Pin Information Pin Symbol Description 1 RF1 RF port. When VC1 = Hi and VC2 = Lo, this port is connected to RFcom. An external DC blocking capacitor (C1) is required for internal DC bias blocking. 2 GND GND port. The distance between this pin and ground pattern should be as short as possible for RF performance. 3 RF2 RF port. When VC1 = Lo and VC2 = Hi, this port is connected to RFcom. An external DC blocking capacitors (C1) is required for internal DC bias blocking. 4 VC2 Control port. Switching operation is controlled by the voltage of this port. The bypass capacitor (C2) is required. 5 RFcom 6 VC1 Common RF port. Switching this port to RF1 or RF2 is controlled by “VC1” and “VC2” voltage. An external DC blocking capacitor (C1) is required for internal DC bias blocking. Control port. Switching operation is controlled by the voltage of this port. The bypass capacitor (C2) is required. Test Circuit 1 (RF Test Circuit) RFcom C1 VC1 VC2 C2 C2 Top view RF1 C1 C1 RF2 C1: 56 pF C2: 10 pF GND The values of capacitors depends on the application frequency range and the board pattern layout. Board design and external components should be considered this. Please refer to the Recommend External Parts Table below. Reference External Parts 50 MHz to 300 MHz 300 MHz to 500 MHz 0.5 GHz to 2.5 GHz Ｃ1 1000 pF 100 pF 56 pF Ｃ2 100 pF 10 pF 10 pF 3 2002-11-14 TG2213S Test Board RFcom C1 C2 VC1 RF1 VC2 C2 C1 C1 RF2 T1M32_T-01 Notice The circuits and measurements contained in this document are given only in the context of as examples of applications for these products. Moreover, these example application circuits are not intended for mass production, since the high-frequency characteristics (the AC characteristics) of these devices will be affected by the external components which the customer uses, by the design of the circuit and by various other conditions. It is the responsibility of the customer to design external circuits which correctly implement the intended application, and to check the characteristics of the design. TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications. 4 2002-11-14 TG2213S 0.5 0.5 1 1 (dB) 1.5 (dB) 1.5 2 LOSS2 LOSS – Pin (RFcom – RF2) 0 LOSS1 LOSS – Pin (RFcom – RF1) 0 2 2.5 3 3.5 4 0 2.5 3 VC1 = 2.7 V VC2 = 0 V 3.5 f = 2.5 GHz 10 20 4 0 30 VC1 = 0 V VC2 = 2.7 V f = 2.5 GHz 10 Pin (dB) 20 Pin (dB) ISL – Pin (RFcom – RF1) ISL – Pin (RFcom – RF2) 0 0 VC1 = 0 V VC2 = 0 V 5 f = 2.5 GHz (dB) 10 ISL2 (dB) ISL1 VC1 = 2.7 V VC2 = 2.7 V 5 15 20 25 0 f = 2.5 GHz 10 15 20 5 10 15 20 25 0 25 5 10 0.5 1 1 (dB) 0.5 1.5 2 2.5 3 VC1 = 2.7 V VC2 = 0 V 25 1.5 2 2.5 3 3.5 RF2 = 50 W 1.0 20 LOSS – f (RFcom – RF2) 0 Insertion LOSS Insertion LOSS (dB) LOSS – f (RFcom – RF1) 0 4 0 15 Pin (dB) Pin (dB) 3.5 30 2.0 4 0 3.0 Frequency (GHz) VC1 = 0 V VC2 = 2.7 V RF1 = 50 W 1.0 2.0 3.0 Frequency (GHz) 5 2002-11-14 TG2213S ISL – f (RFcom – RF1) ISL – f (RFcom – RF2) 20 20 40 Isolation Isolation (dB) 0 (dB) 0 60 80 0 40 60 VC1 = 0 V VC1 = 2.7 V VC2 = 2.7 V RF2 = 50 W VC2 = 0 V RF1 = 50 W 1.0 2.0 80 0 3.0 1.0 Frequency (GHz) 3.0 Frequency (GHz) ISL – f (RF1 – RF2) ISL – f (RF1 – RF2) 0 20 20 (dB) 0 (dB) 40 Isolation Isolation 2.0 60 80 0 40 60 VC1 = 2.7 V VC1 = 0V VC2 = 0 V RFcom = 50 W VC2 = 2.7 V RFcom = 50 W 1.0 2.0 80 0 3.0 1.0 2.0 Frequency (GHz) Frequency (GHz) Switching time (RAISE) Switching time (FALL) 3.0 52.7 ns 47.3 ns VC VC RF RF Time (50 ns/div) Time (50 ns/div) 6 2002-11-14 TG2213S RESTRICTIONS ON PRODUCT USE 020704EAC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium Arsenide (GaAs) is a substance used in the products described in this document. GaAs dust or vapor is harmful to the human body. Do not break , cut, crush or dissolve chemically. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2002-11-14