TOSHIBA TG2216TU

TG2216TU
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2216TU
RF SPDT Switch
Antenna switches for Bluetooth Class1, wireless LAN and PHS
Filter switching for mobile communication
Features
·
Low insertion Loss: LOSS = 0.5dB (typ.) @1.0 GHz
·
High isolation: ISL = 25dB (typ.) @1.0 GHz
·
High linearly: Pi1dB = 28dBmW (typ.) @2.5 GHz
·
Low voltage operation: VCON = 0 V/2.7 V
·
Small package: UF6 package (2.0 × 2.1 × 0.7 mm)
= 0.7dB (typ.) @2.5 GHz
= 23dB (typ.) @2.5 GHz
Weight: 0.007g (typ.)
Pin Connection and Marking (top view)
VC1
6
RFcom
5
Equivalent Circuit
VC2
4
VC1
6
RFcom
5
VC2
4
3
RF2
1
RF1
2
GND
3
RF2
US
1
RF1
2
GND
Maximum Ratings (Ta = 25°C)
Characteristics
Control voltage
Input power
Total power dissipation
Symbol
Rating
VC1
6
VC2
6
Pi
1
W
100
mW
PD (Note)
Unit
V
Operating temperature range
Topr
−40 to 85
°C
Storage temperature range
Tstg
−55 to 125
°C
Note:
2
When mounted on the glass epoxy of 2.5 cm × 1.6 t
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Electrical Characteristics (VCON(Hi) = 2.7 V, VCON(LO) = 0 V, Ta = 25°C, Zg = Zl = 50 W)
Symbol
Test
Circuit
LOSS (1)
1
LOSS (2)
Characteristics
Min
Typ.
Max
f = 1.0 GHz, Pi = 0dBmW
¾
0.5
0.8
1
f = 2.0 GHz, Pi = 0dBmW
¾
0.6
0.9
LOSS (3)
1
f = 2.5 GHz, Pi = 0dBmW
¾
0.7
1.0
ISL (1)
1
f = 1.0 GHz, Pi = 0dBmW
22
25
¾
ISL (2)
1
f = 2.0 GHz, Pi = 0dBmW
22
24
¾
ISL (3)
1
f = 2.5 GHz, Pi = 0dBmW
20
23
¾
Input power at 1dB gain compression
Pi1dB
1
f = 2.5 GHz
25
28
¾
dBmW
Control current
ICON
¾
no RF signal input
¾
¾
0.01
mA
Switching time
tsw
1
f = 100 MHz, Pi = 0dBmW
¾
50
200
ns
Insertion loss
Isolation
Test Condition
Unit
dB
dB
Switch Connection
VC1
VC2
Switch Condition
RFcom – RF1
RFcom – RF2
OFF
ON
ON
OFF
RF2
Hi
Low
RFcom
RF1
RF2
Low
Hi
RFcom
RF1
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are
earthed.
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Pin Information
Pin
Symbol
Description
1
RF1
RF port. When VC1 = Hi and VC2 = Lo, this port is connected to RFcom. An external DC blocking
capacitor (C1) is required for internal DC bias blocking.
2
GND
GND port. The distance between this pin and ground pattern should be as short as possible for RF
performance.
3
RF2
RF port. When VC1 = Lo and VC2 = Hi, this port is connected to RFcom. An external DC blocking
capacitor (C1) is required for internal DC bias blocking.
4
VC2
Control port. Switching operation is controlled by the voltage of this port. The bypass capacitor (C2)
is required.
5
RFcom
6
VC1
Common RF port. Switching this port to RF1 or RF2 is controlled by “VC1” and “VC2” voltage. An
external DC blocking capacitor (C1) is required for internal DC bias blocking.
Control port. Switching operation is controlled by the voltage of this port. The bypass capacitor (C2)
is required.
Test Circuit 1 (RF Test Circuit)
RFcom
C1
VC1
VC2
C2
C2
Top
view
RF1
C1
C1
RF2
C1: 56 pF
C2: 10 pF
GND
The values of capacitors depends on the application frequency range and the board pattern layout.
This should be considered for Board design and external components.
Please refer to the Recommend External Parts Table below.
Reference External Parts
50 MHz to 300 MHz
300 MHz to 500 MHz
0.5 GHz to 2.5 GHz
C1
1000 pF
100 pF
56 pF
C2
100 pF
10 pF
10 pF
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Test Board
RFcom
C1
VC1
C2
VC2
C2
RF1
C1
C1
RF2
TIM30-T-01
Notice
The circuits and measurements contained in this document are given only in the context of as examples of
applications for these products.
Moreover, these example application circuits are not intended for mass production, since the high-frequency
characteristics (the AC characteristics) of these devices will be affected by the external components which the
customer uses, by the design of the circuit and by various other conditions.
It is the responsibility of the customer to design external circuits which correctly implement the intended
application, and to check the characteristics of the design.
TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications.
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LOSS – Pi (RFcom – RF2)
0.5
0.5
1
1
(dB)
0
1.5
LOSS2
LOSS1
(dB)
LOSS – Pi (RFcom – RF1)
0
2
2
2.5
Insertion loss
Insertion loss
2.5
1.5
3
3.5
VC1 = 0 V
4 VC2 = 2.7 V
4.5 RF2 = 50 W
f = 2.5 GHz
5
0
10
20
Input power Pin
30
3
3.5
VC1 = 2.7 V
4 VC2 = 0 V
4.5 RF1 = 50 W
f = 2.5 GHz
5
0
10
40
(dBmW)
20
Input power Pin
ISL – Pi (RFcom – RF1)
30
(dBmW)
ISL – Pi (RFcom – RF2)
0
0
VC1 = 2.7 V
ISL (dB)
f = 2.5 GHz
10
15
20
25
f = 2.5 GHz
10
15
20
25
30
0
10
20
Input power Pin
30
30
0
40
(dB)
0
0.5
LOSS
1.0
1.5
2.0
Insertion loss
(dB)
LOSS
0
2.5
3.0
3.5
4.0
VC2 = 2.7 V
RF2 = 50 W
1.0
Frequency f
2.0
20
30
40
(dBmW)
LOSS – f (RFcom – RF2)
0.5
VC1 = 0 V
10
Input power Pin
(dBmW)
LOSS – f (RFcom – RF1)
Insertion loss
VC2 = 2.7 V
RF1 = 50 W
5
Isolation
ISL (dB)
Isolation
VC1 = 0 V
VC2 = 0 V
RF2 = 50 W
5
0
40
3.0
1.0
1.5
2.0
2.5
3.0
3.5
VC1 = 2.7 V
4.0
VC2 = 0 V
RF1 = 50 W
0
(GHz)
1.0
Frequency f
5
2.0
3.0
(GHz)
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ISL – f (RFcom – RF2)
0
10
20
20
ISL (dB)
0
10
30
40
Isolation
Isolation
ISL (dB)
ISL – f (RFcom – RF1)
50
60
30
40
50
60
70
VC1 = 2.7 V
70
VC1 = 0 V
80
VC2 = 0 V
RF2 = 50 W
80
VC2 = 2.7 V
RF1 = 50 W
1.0
0
2.0
Frequency f
3.0
1.0
0
(GHz)
Frequency f
3.0
(GHz)
ISL – f (RF1 – RF2)
0
10
20
20
ISL (dB)
0
10
30
40
Isolation
Isolation
ISL (dB)
ISL – f (RF1 – RF2)
50
60
70 VC1 = 2.7 V
VC2 = 0 V
80
RFcom = 50 W
30
40
50
60
70 VC1 = 0 V
VC2 = 2.7 V
80
RFcom = 50 W
1.0
0
2.0
2.0
Frequency f
3.0
0
(GHz)
1.0
2.0
Frequency f
Switching Time (RF1: RAISE)
3.0
(GHz)
Switching Time (RF1: FALL)
26.2 ns
24.3 ns
VC
VC
RF1
RF1
Time (20 ns/div)
Time (20 ns/div)
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Switching Time (RF2: RAISE)
Switching Time (RF2: FALL)
22.5 ns
25.8 ns
VC
VC
RF2
RF2
Time (20 ns/div)
Time (20 ns/div)
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Package Dimensions
UF6
Weight: 0.007 g (typ.)
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RESTRICTIONS ON PRODUCT USE
020704EAC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium Arsenide (GaAs) is a substance used in the products described in this document. GaAs dust or vapor is
harmful to the human body. Do not break , cut, crush or dissolve chemically.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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