IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications • • • • • High input impedance High peak current capability (150A) Easy gate drive Surface Mount : SGR20N40L Straight Lead : SGU20N40L Application Strobe flash. C C G G E D-PAK Absolute Maximum Ratings Symbol VCES VGES ICM (1) PC TJ Tstg TL GC E I-PAK E TC = 25°C unless otherwise noted Description Collector - Emitter Voltage Gate - Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8” from case for 5 seconds @ TC = 25°C SGR / SGU20N40L 400 ±6 150 45 -40 to +150 -40 to +150 Units V V A W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA (D-PAK) RθJA (I-PAK) Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 3.0 50 110 Units °C/W °C/W °C/W Notes : (2) Mounted on 1” square PCB (FR4 or G-10 Material) ©2001 Fairchild Semiconductor Corporation SGR20N40L / SGU20N40L Rev. A1 SGR20N40L / SGU20N40L August 2001 C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 450 --- ---- -10 ± 0.1 V µA µA IC = 1mA, VCE = VGE IC = 150A, VGE = 4.5V 0.5 2.0 1.0 4.5 1.4 8.0 V V VGE = 0V, VCE = 30V, f = 1MHz ---- 3800 50 35 ---- pF pF pF VCC = 300V, IC = 150A, VGE = 4.5V, RG = 15Ω* Resistive Load ----- 0.2 1.7 0.3 1.5 --0.5 2.0 µs µs µs µs Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage C-E Saturation Current Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time * Notes : Recommendation of RG Value : RG≥15Ω ©2001 Fairchild Semiconductor Corporation SGR20N40L / SGU20N40L Rev. A1 SGR20N40L / SGU20N40L Electrical Characteristics of the IGBT T Common Emitter VGE = 4.5V 5.0V 4.5V Collector-Emitter Voltage, VCE [v] Collector Current, IC [A] 7 Common Emitter T C = 25℃ 4.0V 150 3.5V 3.0V 100 VGE = 2.5V 50 0 6 5 4 100A 3 IC = 70A 2 0 2 4 6 8 -50 0 Fig 1. Typical Output Characteristics 20 20 Gate-Emitter Voltage, VGE [V] 16 12 8 150A 100A 150 Common Emitter TC = 25℃ 16 12 8 150A 100A 4 IC = 70A IC = 70A 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] Fig 4. Saturation Voltage vs. VGE Fig 3. Saturation Voltage vs. VGE 10000 20 Common Emitter T C = 125℃ Cies 16 Capacitance [pF] Collector-Emitter Voltage, VCE [V] 100 Fig 2. Saturation Voltage vs. Case Temperature at Variant Current Level Common Emitter TC = -40℃ 4 50 Case Temperature, TC [℃] Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 150A 12 8 150A 1000 Common Emitter VGE = 0V, f = 1MHz TC = 25℃ 100 Coes 100A 4 Cres IC = 70A 10 0 0 1 2 3 4 Gate-Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation 5 6 0 10 20 30 40 Collector-Emitter Voltage, VCE [V] Fig 6. Capacitance Characteristics SGR20N40L / SGU20N40L Rev. A1 SGR20N40L / SGU20N40L 200 175 Collector Peak Current, ICP [A] Gate - Emitter Voltage, VGE [V] Common Emitter VCC = 300V, RL = 2Ω TC = 25℃ 4 2 150 125 100 75 50 25 0 0 0 10 20 30 40 Gate-Charge, Qg [nC] Fig 7. Turn-On Characteristics vs. Gate Resistance ©2001 Fairchild Semiconductor Corporation 50 60 0 2 4 6 8 10 Gate - Emitter Voltage, VGE [V] Fig 8. Collector Current Limit vs. Gate - Emitter Voltage Limit SGR20N40L / SGU20N40L Rev. A1 SGR20N40L / SGU20N40L 200 6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3