FGPF90N30 tm 300V, 90A PDP IGBT Features Description • High Current Capability Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF90N30 offers the optimum solution for PDP applications where low-condution loss is essential. • Low saturation voltage: VCE(sat) =1.5V @ IC = 60A • High Input Impedance • Fast switch • RoHS Complaint Application . PDP System TO-220F 1 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Description FGPF90N30 Units VCES Collector-Emitter Voltage 300 V VGES Gate-Emitter Voltage ± 30 V 25oC 220 A 56.8 W IC pulse(1) Pulsed Collector Current @ TC = PD Maximum Power Dissipation @ TC = 25oC Maximum Power Dissipation @ TC = 100οC TJ Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 22.7 W -55 to +150 o -55 to +150 oC o 300 C C Thermal Characteristics Symbol Parameter Typ. Max. Units RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 2.2 o C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 o C/W Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj ©2006 Fairchild Semiconductor Corporation FGPF90N30 Rev. A 1 www.fairchildsemi.com FGPF90N30 300V, 90A PDP IGBT October 2006 Device Marking Device Package Packaging Type FGPF90N30 FGFP90N30TU TO-220F Rail / Tube Electrical Characteristics Symbol Max Qty Qty per Tube per Box 50ea - TC = 25oC unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 300 -- -- V ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 250uA -- 0.6 -- V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 100 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 250 nA 2.5 4.0 5.0 V IC =30A, VGE = 15V -- 1.25 1.55 V IC =60A, VGE = 15V -- 1.5 -- V IC = 90A, VGE = 15V TC = 25οC -- 1.9 -- V IC = 90A, VGE = 15V TC = 125οC -- 2.0 -- V -- 1690 -- pF -- 240 -- pF -- 80 -- pF -- 22 -- ns -- 106 -- ns On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector Charge VCC = 200 V, IC = 60A RG = 10Ω, VGE = 15V Resistive Load, TC = 25oC VCC = 200 V, IC = 60A RG = 10Ω, VGE = 15V Resistive Load, TC = 125οC VCE = 200 V, IC = 60A VGE = 15V 2 FGPF90N30 Rev. A -- 86 -- ns -- 130 300 ns -- 22 -- ns -- 119 -- ns -- 91 -- ns -- 210 -- ns -- 93 -- nC -- 45 -- nC -- 14 -- nC www.fairchildsemi.com FGPF90N30 300V, 90A PDP IGBT Package Marking and Ordering Information FGPF90N30 300V, 90A PDP IGBT Typical Performance CharacteristicsTypical Saturation VoltageCharacteristics Figure 1. Typical Output Characteristics 240 Figure 2. Typical Output Characteristics 240 o o TC = 125 C 20V 15V Collector Current, IC [A] Collector Current, IC [A] TC = 25 C 12V 180 10V 120 60 15V 20V 12V 180 10V 120 60 VGE = 8V VGE = 8V 0 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 Figure 3. Saturation Voltage 240 VCE = 20V Collector-Emitter Current, ICE [V] Common Emitter VGE = 15V Collector Current, IC [A] 10 Figure 4. Transfer Characteristics 240 o TC = 25 C 180 o TC = 125 C 120 60 180 120 0 0 2 4 Collector-Emitter Voltage, VCE [V] 0 o 25 C 4 8 12 16 Gate-Emitter Voltage, [V] 20 Collector-Emitter Voltage, VCE [V] 1.8 60A 1.4 IC = 30A 1.2 Common Emitter o 90A 1.6 T = 25 C C 16 12 8 90A 4 60A IC =30A Common Emitter VGE = 15V 50 75 100 o Collector-ECase Temperature, TC [ C] 0 125 3 FGPF90N30 Rev. A 20 Figure 6. Saturation Voltage vs.VGE 2.0 1.0 25 o 125 C 60 0 5 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 4 8 12 16 Gate-Emitter Voltage, V GE [V] 20 www.fairchildsemi.com (Continued) Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 20 4000 TC = 125 C o TC = 25 C 16 12 8 90A 60A 4 3000 Cies 2000 1000 Coss Cres IC = 30A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 0 20 Figure 9. Gate Charge Characteristics 15 14 0 5 10 15 20 25 Collector-Emitter Voltage, VCE [V] 300 Common Emitter RL = 3.3Ω 100 50us TC = 25oC 12 100us 10 Vcc = 100V 200V 8 6 4 1ms 10 DC Operation 1 0.1 2 0 0 20 30 Figure 10. SOA Characteristics Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] Common Emitter VGE = 0V, f = 1MHz o Capacitance [pF] Collector-Emitter Voltage, VCE [V] Common Emitter 40 60 Gate Charge, Qg [nC] 80 Single Nonrepetitive o Pulse Tc=25 C Curves must be derated linearly with increase in temperature 0.01 0.1 100 Figure 11. Turn-On Characteristics vs Gate Resistance 1 10 100 Collector-Emitter Voltage, V CE [V] 1000 Figure 12. Turn Off Characteristics vs. Gate Resistance 1000 500 tr Switching Time [ns] Switching Time [ns] FGPF90N30 300V, 90A PDP IGBT Typical Performance Characteristics 100 td(on) Common Emitter VCC = 200V, VGE = 15V IC = 60A tf 100 td(off) Common Emitter V CC = 200V, V GE = 15V IC = 60A o o T C = 25 C T C = 25 C o o T C = 125 C T C = 125 C 10 10 0 20 40 60 80 Gate Resistance, R G [ Ω ] 0 100 40 60 80 100 Gate Resistance, R G [ Ω ] 4 FGPF90N30 Rev. A 20 www.fairchildsemi.com FGPF90N30 300V, 90A PDP IGBT Typical Performance Characteristics (Continued) Figure 13. Turn-On Characteristics vs. Collector Current Figure 14. Turn-Off Characteristics vs. Collector Current 1000 500 Switching Time [ns] Switching Time [ns] tr 100 td(on) 10 Common Emitter V GE = 15V, RG = 10 Ω td(off) 100 tf Common Emitter V GE = 15V, R G = 10 Ω o o T C = 25 C T C = 25 C o o T C = 125 C 1 10 20 30 40 50 60 T C = 125 C 70 80 10 10 90 20 30 Collector Current, IC [A] 40 50 60 Figure 15. Switching Loss vs Gate Resistance 80 90 Figure 16. Switching Loss vs Collector Current 2000 1500 E off 1000 1000 E on Switching Loss [uJ] Switching Loss [uJ] Eoff Common Emitter VCC = 600V, VGE = 15V IC = 40A E on 100 Common Emitter V GE = 15V, R G = 10 Ω o o T C = 25 C T C = 25 C o o T C = 125 C 100 70 Collector Current, IC [A] 0 10 20 T C = 125 C 30 40 50 60 70 80 Gate Resistance, R G [ Ω ] 10 10 90 100 20 30 40 50 60 70 80 90 Collector Current, IC [A] Figure 17. Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 10 1 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 Pdm 0 .0 1 s in g le p u ls e t1 0 .0 1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1 E -3 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 1 10 R e c t a n g u la r P u ls e D u r a t i o n [ s e c ] 5 FGPF90N30 Rev. A www.fairchildsemi.com 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 6 FGPF90N30 Rev. A 2.76 ±0.20 4.70 ±0.20 0.35 ±0.10 www.fairchildsemi.com FGPF90N30 300V, 90A PDP IGBT TO-220F The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 7 FGPF90N30 Rev. A www.fairchildsemi.com FGPF90N30 300V, 90A PDP IGBT TRADEMARKS