FGL60N100D General Description Features Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Home Appliance, Induction Heater, IH JAR, Micro Wave Oven C G TO-264 G C Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL E E TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGL60N100D 1000 ± 25 60 42 120 15 176 70 -55 to +150 -55 to +150 Units V V A A A A W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2002 Fairchild Semiconductor Corporation Typ. ---- Max. 0.71 2.08 25 Units °C/W °C/W °C/W FGL60N100D Rev. A FGL60N100D IGBT Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector Cut-Off Current G-E Leakage Current VCE = 1000V, VGE = 0V VGE = ± 25, VCE = 0V --- --- 1.0 ± 500 mA nA IC = 60mA, VCE = VGE IC = 10A, VGE = 15V IC = 60A, VGE = 15V 4.0 --- 5.0 1.6 2.5 7.0 2.0 2.9 V V V ---- 6300 160 140 ---- pF pF pF -------- 160 360 410 240 230 45 80 400 700 700 330 300 --- ns ns ns ns nC nC nC Typ. 1.2 1.8 1.2 0.05 Max. 1.7 2.1 1.5 2 Units V V us uA Off Characteristics ICES IGES On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=10V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600V, IC = 60A, RG = 51Ω, VGE=15V, Resistive Load, TC = 25°C VCE = 600 V, IC = 60A, VGE = 15V Electrical Characteristics of DIODE T C Symbol Parameter VFM Diode Forward Voltage trr IR Diode Reverse Recovery Time Instantaneous Reverse Current ©2002 Fairchild Semiconductor Corporation = 25°C unless otherwise noted Test Conditions IF = 15A IF = 60A IF = 60A di/dt = -20A/us VRRM = 1000V Min. ---- FGL60N100D Rev. A FGL60N100D Electrical Characteristics of IGBT 100 Common Emitter TC=25℃ 20V 60 Common Emitter VGE=15V 25 ℃ 125 ℃ 80 8V 9V 10V 15V Collector Current, IC [A] 80 Collector Current, IC [A] FGL60N100D 100 7V 40 20 VGE=6V 60 40 20 0 0 0 1 2 3 4 5 0 1 Collector-Emitter Voltage, V CE [V] 2 3 4 Collector-Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 10 Common Emitter O TC= - 40 C 3 Collector-Emitter Voltage, VCE[V] Collector-Emitter Voltage, V CE [V] Common Emitter VGE=15V 80A 60A 2 30A IC=10A 8 6 30A 60A 4 80A 2 IC=10A 0 1 -50 0 50 100 4 150 8 12 Fig 3. Saturation Voltage vs. Case Temperature at Varient Current Level 20 Fig 4. Saturation Voltage vs. VGE 10 10 Common Emitter TC=25 ℃ Common Emitter TC=125 ℃ Collector-Emitter Voltage, VCE[V] Collector-Emitter Voltage, VCE[V] 16 Gate-Emitter Voltage, VGE [V] Case Temperature, TC [℃] 8 6 30A 60A 4 80A 2 IC=10A 0 8 6 30A 60A 80A 4 2 IC=10A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2002 Fairchild Semiconductor Corporation 20 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE FGL60N100D Rev. A VCC=600V, IC=60A VGE =± 15V Switching Time [ns] Capacitance [pF] Cies 1000 Coes 1000 Tr Tf Tdoff 100 Tdon Common Emitter VGE = 0V, f = 1MHz TC = 25 ℃ 100 Cres 10 0.1 1 0 10 50 100 150 200 Gate Resistance, RG [Ω ] Collector-Emitter Voltage [V] Fig 7. Capacitance Characteristics Fig 8. Switching Characteristics vs. Gate Resistance 20 Common Emitter VCC=600V, RL=10 Ω TC=25 ℃ 1000 Gate-Emitter Voltage,VGE [V] Switching Time [ns] VCC=600V, Rg=51Ω VGE=± 15V, TC=25℃ Tdoff Tf 15 10 5 Tr Tdon 0 0 100 10 20 30 40 50 50 100 60 150 200 250 300 Gate Charge, Qg [nC] Collector Current, IC [A] Fig 9. Switching Characteristics vs. Collector Current Fig 10. Gate Charge Characteristics 10 Collector Current , I C [A] 100 IC MAX. (Continuous) 50us 100us 10 1ms DC Operation 1 Thermal Response, Z θJC [℃/W] IC MAX. (Pulsed) 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linearly with increase in temperature 0.01 single pulse 0.1 1E-3 1 10 100 Collector-Emitter Voltage, VCE [V] Fig 11. SOA Characteristics ©2002 Fairchild Semiconductor Corporation 1000 -4 10 -3 10 -2 10 -1 10 0 10 1 10 Rectangular Pulse Duration [sec] Fig 12. Transient Thermal Impedance of IGBT FGL60N100D Rev. A FGL60N100D 10000 10000 Reverse Recovery Time, trr [㎲ ] 10 TC = 100 ℃ TC = 25 ℃ 1 0.1 120 IF=60A TC=25℃ 1.0 100 0.8 80 trr 0.6 60 0.4 40 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 40 80 Forward Voltage, VFM [V] 200 0 240 1000 trr 8 Irr 0.6 6 0.4 4 100 Reverse Current, IR [uA] 10 Reverse Recovery Current, I rr [A] 12 1.0 0.8 160 Fig 14. Reverse Recovery Characteristics vs. di/dt di/dt=-20A/㎲ TC=25℃ 1.2 120 di/dt [A/㎲ ] Fig 13. Forward Characteristics Reverse Recovery Time, t rr [㎲ ] 20 Irr Reverse Recovery Current, I rr [A] Forward Current, I F[A] 1.2 TC = 150℃ 10 1 0.1 T C= 25℃ 0.01 1E-3 10 20 30 40 50 60 Fig 15. Reverse Recovery Characteristics vs. Forward Current 250 0 300 600 900 Reverse Voltage, VR [V] Forward Current, IF [A] Fig 16. Reverse Current vs. Reverse Voltage TC = 25 ℃ Capacitance, Cj [pF] 200 150 100 50 0 0.1 1 10 100 Reverse Voltage, VR [V] Fig 17. Junction capacitance ©2002 Fairchild Semiconductor Corporation FGL60N100D Rev. A FGL60N100D 100 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. H5