FAIRCHILD FGAF40N60UF

FGAF40N60UF
Ultrafast IGBT
General Description
Features
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
TO-3PF
G C E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
E
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
FGAF40N60UF
600
± 20
40
20
160
100
40
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2004 Fairchild Semiconductor Corporation
Typ.
---
Max.
1.2
40
Units
°C/W
°C/W
FGAF40N60UF Rev. A
FGAF40N60UF
IGBT
C
Symbol
Parameter
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
3.5
---
5.1
2.3
3.1
6.5
3.0
--
V
V
V
----
1075
170
50
----
pF
pF
pF
-------------------
15
30
65
35
470
130
600
30
37
110
80
500
310
810
77
20
25
14
--130
100
--1000
--200
250
--1200
150
30
40
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 20mA, VCE = VGE
IC = 20A, VGE = 15V
IC = 40A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
©2004 Fairchild Semiconductor Corporation
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 20A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 300 V, IC = 20A,
VGE = 15V
Measured 5mm from PKG
FGAF40N60UF Rev. A
FGAF40N60UF
Electrical Characteristics of the IGBT T
80
Common Emitter
Tc = 25℃
20V
15V
120
Common Emitter
VGE=15V
Tc= 25℃
Tc= 125℃
70
12V
80
60
Collector Current , Ic (A)
Collector Current, Ic (A)
FGAF40N60UF
160
VGE = 10V
40
50
40
30
20
10
0
0
0
2
4
6
0.5
8
Collector-Emitter Voltage,VCE(V)
1
10
Collector-Emitter Voltage, VCE(V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
30
4
Common Emitter
Vge=15V
Vcc = 300V
Load Current : peak of square wave
3
40A
Load Current [A]
Collector - Emitter Voltage, VCE [V]
25
20A
2
Ic=10A
1
20
15
10
5
Duty cycle : 50%
Tc = 100℃
Powe Dissipation = 24W
0
0
30
60
90
120
0
150
0.1
Case Temperature, TC [℃]
1000
20
[V]
Common Emitter
TC = 25℃
CE
16
Collector - Emitter Voltage, V
[V]
100
Fig 4. Load Current vs. Frequency
20
CE
10
Frequency [kHz]
Fig 3. Saturation Voltage vs.
Case Temperature at Variant Current Level
Collector - Emitter Voltage, V
1
12
8
20A
4
40A
IC = 10A
0
Common Emitter
TC = 125℃
16
12
8
40A
4
20A
Ic=10A
0
0
4
8
12
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
©2004 Fairchild Semiconductor Corporation
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
FGAF40N60UF Rev. A
300
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
2500
Common Emitter
Vcc=300V,VGE= ± 15V
Ic=20A
Tc = 25℃
Tc = 125℃ - - - -
Switching Time (ns)
Capacitance (pF)
Cies
2000
Coes
1500
FGAF40N60UF
3000
1000
Cres
100
Ton
Tr
500
10
0
1
1
30
10
10
Fig 7. Capacitance Characteristics
200
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
2000
Common Emitter
Vcc=300V,VGE= ± 15V
Ic=20A
Tc = 25℃
Tc = 125℃
Common Emitter
Vcc=300V,VGE=± 15V
Ic=20A
Tc = 25℃
Tc = 125℃
1000
Toff
Eon
Switching Time (uJ)
Switching Time (ns)
100
Gate Resistance, RG( Ω )
Collector-Emitter Voltage, VCE (V)
100
Tf
Eoff
100
Tf
50
20
1
10
100
200
1
10
100
200
Gate Resistance, RG( Ω )
Gate Resistance, RG( Ω )
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000
200
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 10Ω
Ton
Common Emitter
V CC = 300V, VGE = ± 15V
10
Switching Time [nS]
Switching Time (ns)
100
TC = 25℃
TC = 125℃
Toff
100
Toff
Tf
R G = 10 Ω
Tr
TC = 25℃
Tf
TC = 125℃
20
10
15
20
25
30
Collector Current, Ic (A)
Fig 11. Turn-On Characteristics vs.
Collector Current
©2004 Fairchild Semiconductor Corporation
35
40
10
15
20
25
30
35
40
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FGAF40N60UF Rev. A
FGAF40N60UF
15
3000
Common Emitter
RL=15 Ω
Eon
100
Eoff
Common Emitter
VCC = 300V, VGE = ± 15V
Eoff
RG = 10Ω
TC = 25℃
(Tc=25 ℃)
12
Gate-Emitter Voltage, V GE (V)
Switching Time (uJ)
1000
300V
200V
9
Vcc=100V
6
3
TC = 125℃
10
0
10
15
20
25
30
35
40
0
30
Collector Current , Ic (A)
60
90
120
Gate Charge, Qg (nC)
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500
Ic MAX (Pulsed)
100
Collector Current, IC [A]
Collector Current, Ic [A]
100
50µs
Ic MAX (Continuous)
100µs
1ms
10
DC Operation
1
Single Nonrepetitive
o
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
10
1
Safe Operating Area
o
V GE=20V, TC=100 C
0.1
0.1
1
1
10
100
100
1000
Collector-Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
Fig 15. SOA Characteristics
Thermal Response [Zthjc]
10
1000
1
0 .5
0 .2
0 .1
0 .1
0 .0 5
Pdm
0 .0 2
t1
0 .0 1
t2
0 .0 1
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
sin gle p ulse
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. A
FGAF40N60UF
Package Dimensions
TO-3PF
4.50 ±0.20
5.50 ±0.20
15.50 ±0.20
2.00 ±0.20
2.00 ±0.20
2.00 ±0.20
22.00 ±0.20
1.50 ±0.20
16.50 ±0.20
2.50 ±0.20
0.85 ±0.03
23.00 ±0.20
10
°
10.00 ±0.20
(1.50)
2.00 ±0.20
14.50 ±0.20
16.50 ±0.20
2.00 ±0.20
4.00 ±0.20
3.30 ±0.20
+0.20
0.75 –0.10
2.00 ±0.20
3.30 ±0.20
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
+0.20
0.90 –0.10
5.50 ±0.20
26.50 ±0.20
14.80 ±0.20
3.00 ±0.20
ø3.60 ±0.20
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I8