SGM2N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 1.2A • High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. D C S G G E SOT-223 Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25°C Collector Current @ TC = 100°C Pulsed Collector Current Maximum Power Dissipation @ Ta = 25°C - Derate above 25°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds SGM2N60UF 600 ± 20 2.4 1.2 10 2.1 0.017 -55 to +150 -55 to +150 Units V V A A A W W/°C °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient (PCB Mount) (2) Typ. -- Max. 60 Units °C/W Notes : (2) Mounted on 1” squre PCB (FR4 or G-10 Material) ©2003 Fairchild Semiconductor Corporation SGM2N60UF Rev.A SGM2N60UF IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA 3.5 --- 4.5 2.1 2.6 6.5 2.6 -- V V V ---- 98 18 4 ---- pF pF pF ------------------- 15 20 80 95 30 13 43 19 24 115 176 36 27 63 9 3 1.5 7.5 --130 160 --70 --200 250 --100 14 5 3 -- ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 1.2mA, VCE = VGE IC = 1.2A, VGE = 15V IC = 2.4A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ©2003 Fairchild Semiconductor Corporation VCC = 300 V, IC = 1.2A, RG = 200Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 1.2A, RG = 200Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 300 V, IC = 1.2A, VGE = 15V Measured 5mm from PKG SGM2N60UF Rev. A SGM2N60UF Electrical Characteristics of the IGBT T 6 Common Emitter Common Emitter V GE = 15V 20V o T C = 25 C o T C = 25 C 5 Collector Current, I C [A] Collector Current, IC [A] 10 15V 8 12V 6 V GE = 10V 4 o T C = 125 C 4 3 2 1 2 0 0 0 2 4 6 0.5 8 1 10 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 3.0 4 V CC = 300V Load Current : peak of square wave Common Emitter V GE = 15V 2.5 2.4A 3 Load Current [A] Collector - Emitter Voltage, VCE [V] SGM2N60UF 12 1.2A 2 I C = 0.6A 2.0 1.5 1.0 1 0.5 Duty cycle : 50% o T C = 100 C Power Dissipation = 4W 0.0 0 0 30 60 90 120 150 0.1 1 o 10 100 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter Common Emitter o o T C = 25 C T C = 125 C Collector - Emitter Voltage, V CE [V] Collector - Emitter Voltage, VCE [V] 1000 Frequency [KHz] Case Temperature, TC [ C] 16 12 8 4 IC = 0.6A 1.2A 2.4A 0 16 12 8 2.4A 4 1.2A IC = 0.6A 0 0 4 8 12 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2003 Fairchild Semiconductor Corporation 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE SGM2N60UF Rev. A SGM2N60UF 160 100 Common Emitter V GE = 0V, f = 1MHz o T C = 25 C Common Emitter VCC = 300V, V GE = +15V IC = 1.2A o TC = 25 C o TC = 125 C Cies Ton Switching Time [ns] Capacitance [pF] 120 80 Coes Tr 40 Cres 0 10 1 10 10 30 100 Fig 7. Capacitance Characteristics 600 Fig 8. Turn-On Characteristics vs. Gate Resistance 100 Common Emitter V CC = 300V, V GE = +15V IC = 1.2A Common Emitter VCC = 300V, V GE = +15V IC = 1.2A o T C = 25 C o TC = 25 C o T C = 125 C o TC = 125 C Toff Eon Switching Loss [uJ] Switching Time [ns] 500 Gate Resistance, RG [Ω ] Collector - Emitter Voltage, VCE [V] Tf Toff 100 Tf Eoff Eoff 10 50 5 10 100 500 10 100 Gate Resistance, RG [Ω ] 500 Gate Resistance, RG [Ω] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 100 Common Emitter V CC = 300V, V GE = +15V R G = 200 Ω Common Emitter VCC = 300V, V GE = +15V RG = 200 Ω o o T C = 25 C o T C = 125 C Switching Time [ns] Switching Time [ns] TC = 25 C o TC = 125 C Ton Toff Toff Tf Tf 100 Tr 10 0.5 1.0 1.5 2.0 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2003 Fairchild Semiconductor Corporation 2.5 0.5 1.0 1.5 2.0 2.5 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGM2N60UF Rev. A SGM2N60UF 15 100 Common Emitter RL = 250 Ω Common Emitter V CC = 300V, V GE = +15V R G = 200 Ω Gate - Emitter Voltage, V GE [ V ] o o T C = 25 C o Switching Loss [uJ] T C = 125 C Eon Eon Eoff 10 Eoff Tc = 25 C 12 9 300 V 6 200 V VCE = 100 V 3 0 0.5 1.0 1.5 2.0 2.5 0 2 4 6 8 10 Gate Charge, Qg [ nC ] Collector Current, IC [A] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 20 10 IC MAX. (Pulsed) 10 100µs IC MAX. (Continuous) 1㎳ 1 DC Operation 0.1 0.01 1E-3 Collector Current, I C [A] Collector Current, I C [A] 50µs Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature 1 Safe Operating Area o V GE=20V, T C=100 C 10 100 Collector-Emitter Voltage, VCE [V] 0.1 1000 1 10 o 10 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics T h e r m a l R e s p o n s eC, / W Z t ]h jc [ 1 Fig 16. Turn-Off SOA Characteristics 2 D = 0 .5 0 .2 10 1 0 .1 0 .0 5 0 .0 2 10 Pdm 0 .0 1 0 t1 t2 s i n g le p u l s e Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 10 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 R e c t a n g u la r P u ls e D u r a t io n [ s e c ] Fig 17. Transient Thermal Impedance of IGBT ©2003 Fairchild Semiconductor Corporation SGM2N60UF Rev. A SGM2N60UF Package Dimension 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 7.00 ±0.30 (0.60) 0.70 ±0.10 (0.95) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation SGM2N60UF Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I5