IRF IRF7379

PD - 91625
IRF7379
HEXFET® Power MOSFET
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated
S1
G1
S2
G2
N -C H A N N EL M O S FET
1
8
D1
2
7
D1
3
6
D2
4
5
D2
VDSS
N-Ch
P-Ch
30V
-30V
RDS(on) 0.045Ω 0.090Ω
P -C H AN N E L MO S FET
T o p V ie w
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings
Parameter
VSD
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
30
5.8
4.6
46
-30
-4.3
-3.4
-34
2.5
0.02
± 20
5.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
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Maximum Junction-to-Ambient„
Max.
Units
50
°C/W
1
12/8/98
IRF7379
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
LS
Internal Drain Inductace
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max.
N-Ch 30
—
—
P-Ch -30 —
—
N-Ch — 0.032 —
P-Ch — -0.037 —
— 0.038 0.045
N-Ch
— 0.055 0.075
— 0.070 0.090
P-Ch
— 0.130 0.180
N-Ch 1.0 —
—
P-Ch -1.0 —
—
N-Ch 5.2 —
—
P-Ch 2.5 —
—
N-Ch —
— 1.0
P-Ch —
— -1.0
N-Ch —
—
25
P-Ch —
— -25
N-P ––
— ±100
N-Ch —
—
25
P-Ch —
—
25
N-Ch —
— 2.9
P-Ch —
— 2.9
N-Ch —
— 7.9
P-Ch —
— 9.0
N-Ch — 6.8 —
P-Ch —
11
—
N-Ch —
21
—
P-Ch —
17
—
N-Ch —
22
—
P-Ch —
25
—
N-Ch — 7.7 —
P-Ch —
18
—
N-P — 4.0 —
N-P — 6.0 —
N-Ch — 520 —
P-Ch — 440 —
N-Ch — 180 —
P-Ch — 200 —
N-Ch —
72
—
P-Ch —
93
—
Units
V
V/°C
Ω
V
S
µA
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A ƒ
VGS = 4.5V, ID = 4.9A ƒ
VGS = -10V, ID =- 4.3A ƒ
VGS = -4.5V, ID =- 3.7A ƒ
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 2.4A ƒ
VDS = -24V, ID = -1.8A
ƒ
VDS = 24 V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24 V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = ± 20V
N-Channel
ID = 2.4A, VDS = 24V, VGS = 10V
nC
ƒ
P-Channel
ID = -1.8A, VDS = -24V, VGS = -10V
N-Channel
VDD = 15V, ID = 2.4A, RG = 6.0Ω,
RD = 6.2Ω
ns
ƒ
P-Channel
VDD = -15V, ID = -1.8A, RG = 6.0Ω,
RD = 8.2Ω
nH
Between lead, 6mm (0.25in.) from
package and center of die contact
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
pF
ƒ
P-Channel
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
I SM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 3.1
—
— -3.1
A
—
—
46
—
— -34
—
— 1.0
TJ = 25°C, IS = 1.8A, VGS = 0V ƒ
V
—
— -1.0
TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
—
47
71
N-Channel
ns
—
53
80
TJ = 25°C, IF = 2.4A, di/dt = 100A/µs
—
56
84
P-Channel
ƒ
nC
TJ = 25°C, IF = -1.8A, di/dt = -100A/µs
—
66
99
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
‚ N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7379
N-Channel
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , D rain -to-S ourc e C urren t (A )
D
I , D rain-to-S ourc e C urrent (A )
D
TOP
100
4.5V
10
20µ s P U LS E W ID T H
TJ = 25°C
1
0.1
1
10
A
100
4 .5V
10
20 µ s P U L S E W ID TH
T J = 150°C
1
100
0.1
VD S , D rain-to-S ourc e Voltage (V)
1
10
A
100
V D S , D ra in-to-S ource V olta ge (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
I S D , R everse D rain C urre nt (A )
I D , D rain -to -S o u rce C u rrent (A )
100
TJ = 2 5 °C
TJ = 1 5 0 °C
VDS = 15V
2 0 µ s P U L S E W ID T H
10
4
5
6
7
8
9
V G S , G a te -to -S o u rce V olta ge (V )
Fig 3. Typical Transfer Characteristics
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10
A
10
TJ = 150 °C
TJ = 25 °C
1
V G S = 0V
0.1
0.0
0.5
1.0
1.5
2.0
A
2.5
V S D , S ource-to-D rain V oltage (V )
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7379
I D = 4.0A
1.5
1.0
0.5
V G S = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R DS (on) , Drain-to-Source On Resistance ( Ω )
R D S(o n ) , D rain-to-S ourc e O n R esis tanc e
(N orm alized)
2.0
N-Channel
0.20
0.16
0.12
VGS = 4.5V
0.08
VGS = 10V
0.04
0.00
2
4
8
10
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 5. Normalized On-Resistance
Vs. Temperature
R DS (on) , Drain-to-Source On Resistance ( Ω )
6
I D , Drain Current (A)
T J , Junction Tem perature (°C )
0.08
0.07
0.06
0.05
ID = 5.8A
0.04
0.03
0
4
8
12
16
VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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IRF7379
N-Channel
V GS
C iss
C rss
C oss
C , C apac itanc e (pF )
800
=
=
=
=
20
0V ,
f = 1M H z
C gs + C gd , C ds S H O R T E D
C gd
C ds + C g d
V G S , G ate-to-S ou rce V olta ge (V )
1000
C is s
600
C oss
400
200
C rs s
0
A
1
10
100
I D = 2.4A
V D S = 24V
16
12
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 11
0
0
V D S , D rain-to -S ource V oltage (V )
5
10
15
20
A
25
Q G , Total G ate C harge (nC )
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
P DM
0.02
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7379
100
P-Channel
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
10
-I D , D rain-to-S ourc e C urrent (A )
-ID , D rain-to-S ource C urrent (A )
TOP
-4 .5 V
10
-4 .5V
2 0 µ s P U LS E W ID TH
TJ = 2 5°C
A
1
0.1
1
10
20 µ s P U LS E W ID TH
T J = 1 50 °C
1
0.1
100
Fig 11. Typical Output Characteristics
A
100
Fig 12. Typical Output Characteristics
100
100
-I S D , R e vers e D ra in C u rre nt (A )
-I D , D ra in -to-S ou rc e C u rren t (A )
10
-V D S , D rain-to-S ource V oltage (V)
-VD S , D rain-to-S ourc e V oltage (V )
TJ = 2 5 °C
T J = 1 5 0 °C
10
10
TJ = 15 0 °C
TJ = 2 5 °C
1
V D S = -1 5 V
2 0 µ s P U L S E W ID T H
1
4
5
6
7
8
9
10
-V G S , G a te -to -S o u rc e V o lta g e (V )
Fig 13. Typical Transfer Characteristics
6
1
A
VG S = 0 V
0.1
0.0
0.3
0.6
0.9
1.2
A
1.5
-VS D , S o u rc e -to-D rain V o ltag e (V )
Fig 14. Typical Source-Drain Diode
Forward Voltage
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IRF7379
R D S (on) , D rain-to-S ource O n R esistance
(N orm alize d)
2.0
R DS (on) , Drain-to-Source On Resistance ( Ω )
P-Channel
I D = -3.0 A
1.5
1.0
0.5
VG S = -1 0V
0.0
-60
-40
-20
0
20
40
60
80
100 120
140
160
A
0.50
0.40
0.30
VGS = -4.5V
0.20
VGS = -10V
0.10
0.00
0
2
6
8
10
12
14
Fig 16. Typical On-Resistance Vs. Drain
Current
Fig 15. Normalized On-Resistance
Vs. Temperature
R DS (on), Drain-to-Source On Resistance ( Ω )
4
-I D , Drain Current (A)
T J , Ju nction T em p erature (°C )
0.16
0.14
0.12
0.10
ID = -4.3A
0.08
0.06
0
4
8
12
16
-VGS , Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance Vs. Gate
Voltage
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7
IRF7379
V GS =
C iss =
C rs s =
C oss =
C , C apacitance (pF)
800
600
20
0V ,
f = 1M H z
C g s + C gd , C ds S H O R TE D
C gd
C ds + C g d
-V G S , G ate-to-S ource V oltage (V )
1000
P-Channel
C iss
C oss
400
C rss
200
0
A
1
10
- -V
DS
100
I D = -3.0A
V D S = -24V
16
12
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 22
0
0
5
10
15
20
A
25
Q G , Total G ate C harge (nC )
, D ra in -to -S ou rce V oltage (V )
Fig 18. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 19. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
P DM
0.02
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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IRF7379
Package Outline
SO8 Outline
DIM
D
-B-
5
8
7
6
5
1
2
3
e
6X
0.25 (.010)
4
M
A M
K x 45°
e1
θ
A
-C-
0.10 (.004)
B 8X
0.25 (.010)
L
8X
A1
6
C
8X
M C A S B S
MILLIMETERS
MAX
MIN
MAX
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
5
H
E
-A-
INCHES
MIN
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.011
.019
0.28
0.48
L
0.16
.050
0.41
1.27
θ
0°
8°
0°
8°
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5
6.46 ( .255 )
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO8
E X A M P L E : T H IS IS A N IR F 7 1 0 1
312
IN T E R N A T IO N A L
R E C T IF IE R
LOGO
XX X X
F7101
TOP
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D A T E C O D E (Y W W )
Y = L A S T D IG IT O F T H E Y E A R
W W = W EEK
PART NUMBER
W AFER
LO T CODE
(L A S T 4 D IG IT S )
BO TTO M
9
IRF7379
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TE R M IN AL N U M B ER 1
12 .3 ( .48 4 )
11 .7 ( .46 1 )
8.1 ( .318 )
7.9 ( .312 )
F EE D D IR EC T IO N
N O TE S :
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
3 . O U TL IN E C O N FO R M S TO E IA -4 8 1 & E IA -54 1 .
330.00
(12.992)
M A X.
14.40 ( .566 )
12.40 ( .488 )
N O T ES :
1. C O N T RO LL IN G D IM E N SIO N : M ILLIM ET ER .
2. O U T LIN E C O N F O R M S T O EIA-48 1 & E IA-541.
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IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
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Data and specifications subject to change without notice.
12/98
10
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